Fabrication of GaAs Devices

Glossary

A-B

AES
Auger electron spectroscopy; a surface analysis technique that probes the chemistry of a surface by measuring the energy of electrons emitted from that surface when it is irradiated with electrons of energy in the range 2 50 keV
AFM
atomic-force microscopy, a surface-analysis technique that measures the position of atoms on the surface using a ceramic or semiconductor tip at the end of a cantilever. As the tip moves over a surface, it contacts the surface continuously or periodically and the cantilever bends as the tip is repelled or attracted to the surface
acceptor
an atom or defect that provides a "hole", e.g. Zn on Ga site in GaAs
activation energy
the energy of a potential barrier that must be crossed for a reaction to proceed
airbridge
a metal interconnect that spans between two contacts through the air rather than crossing over a dielectric
alkane
hydrocarbons with a formula C nH 2n+2. Examples are methane and ethane
alloy
to heat in order to promote a solid-state reaction such as that needed to form many kinds of ohmic contacts
analogue
referring to a circuit or application using an architecture with continuously variable voltages and currents
antisite defect
a type of defect where an atom of one element of a compound is located on a lattice site normally occupied by an atom of a different element of the compound
AR coating
anti-reflection coating, a thin layer of material that changes the reflectivity of a surface; minimum reflection occurs...

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