Appendix B: Glossary

A-B

Absolute zero

Refers to the coldest theoretical temperature (-273.15 C or -459.67 F), at which the energy of molecular motion is zero.

Active

One of the BJT's three possible states. This one is a predetermined state facilitated by biasing it halfway (the Q-point), between saturation and cutoff, as used as an AC amplifier.

A/D or ADC

Abbreviation of analog-to-digital converter, a device that converts an analog level to a digital equivalent.

Alpha (?)

A figure of merit, and a measure of the current gain between the emitter and collector of a BJT, in the common-base configuration.

Ambient temperature

The current temperature of the surrounding environment, such as room temperature (68 F), or the normal temperature within a circuit's enclosure.

Amplified ?V _BE

Applies to a particular voltage within a bandgap reference circuit.

Anode

The positive terminal of a diode, made of P-type material.

Avalanche breakdown

Refers to a reverse-biased semiconductor junction, where a sudden change from a high electrical resistance to very low resistance can cause damage to the device, unless it is current-limited. Relates to one of two breakdown mechanisms within a zener diode. Above approximately 8 volts, breakdown is caused by this effect.

Axial leads

Usually refers to a metal lead coming from each end of a component, either semiconductor (e.g., a diode) or passive (e.g., capacitor, resistor, inductor), along its axis.

Bandgap

The bandgap is one of the key properties of any semiconductor and is a measure of the energy difference between the valence and conduction...