TABLE OF CONTENTS Various electrical properties of thin films are vital to the efficient functioning of many devices. For example: interconnections in integrated circuits require low resistivity; thin-film transistors require adequate charge carrier mobility and high on-off current ratio; solar cells require a high value of the minority carrier diffusion length, a low dark conductivity coupled with a high photoconductivity, and as high a short-circuit current and open circuit voltage as possible; superconducting thin films require a high critical current density; dielectric films require a high breakdown voltage; ohmic contacts require a low interfacial impedance; etc. We will consider these electrical properties and how the structure (i.e. mostly defect structure) affects them in this chapter. As stated in the Preface, we shall not give a detailed exposition of each topic. Rather, our objective here is to provide, where possible, an understanding of the physical bases for the effects of structure on the electrical properties and a summary of the data that characterize these effects.
The lower is the electrical resistance of the interconnection material in integrated circuits the faster can signals be transmitted between devices. Hence, there is a compelling commercial reason to make use of an interconnection material having the lowest electrical resistivity. Yet, the standard interconnection material in use prior to 2002 in integrated circuits is an aluminum alloy having somewhat higher resistivity than pure aluminum, and even higher resistivity than other...
