Why is the resistivity of a metal, monocrystalline film unaffected by a dislocation density of 10 ⁸/cm ², whereas the same dislocation density in a monocrystalline semiconductor markedly increases the resistivity?

What defect is responsible for the excess resistivity in as-deposited metal films? What processing procedure will reduce the population of this defect?

What aspect of structure affects the resistivity of films thinner than the electron mean free path?

Comment on the effect of recombination centers on mobility of charge carriers?

Will surface scattering contribute to the electrical resistivity should electrons be specularly reflected from the surface?

For a dopant concentration of 10 ¹⁶/cm ³ and a grain size of 100 nm, use Seto's model to evaluate the expected electron mobility in poly-Si.

If you used a deposition procedure for poly-Si that yielded intragranular mobility equivalent to that of bulk monocrystalline silicon, which regime, that of equation (1.6) or that of equation (1.7), would you use to produce a poly-Si with the highest mobility?

What type of defects would you add to a semiconductor to produce an insulating region in the semiconductor? What type of defects would transform an insulating region in the semiconductor to a conducting region? (J. Appl. Phys.)

The dangling bond density in hydrogenated amorphous silicon can be reduced to below 10 ¹⁶cm ^-3 but in hydrogenated amorphous SiO ₂ it remains above 10 ¹⁸cm ^-3. Suggest a reason for this result?

How would you increase the...