Plasma Polymer Films

5.5: Amorphous Insulator-Amorphous Semiconductor Transition

5.5 Amorphous Insulator-Amorphous Semiconductor Transition

The critical strength of disorder, which determines the type of electronic structure, is closely connected with the molecular structure of the material. Going along a theoretical way, for instance, from frozen mixture of silane (SiH 4) and methane (CH 4) (which is a molecularly amorphous material) via a mixture of polymer-like chains ([-C-C-], [-Si-Si-] and [-C-Si-]), then more and more cross-linked chains (covalent amorphous material), hydrogenated carbon-silicon glasses (a-Si xC y:H), up to a-Si xC y:H alloys, one should agree to the fact that completely different models describe the electronic structure of the materials lying at both ends of the way. Thus, we have to expect that at some point of the way a rapid transition in the electronic structure from one to another type must occur.

In fact, it has been found that contrary to a-Si xC Y:H alloys, which are generally known as typical semiconducting materials ( Sec. 5.3.3), a-Si xC Y:H glasses (pp-organosilicon glasses) rank rather among a-insulators (Sec. 5.4). If these considerations are correct, the monotonic change of the molecular structure from glass to alloy, which results in a change of the strength of disorder, should cause a transition from a-insulator to a-semiconductor, i.e. the transition from a material with no extended states to a material with extended states. In fact, such an effect has been observed in films plasma-deposited from methylosilanes with varying methyl contents (from 0 to 4...

UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Category: Amorphous Metals
Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.