Help with Ion Milling Systems specifications:
Instrumentation Type
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| Mounting / Loading: | |||
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| In-situ / System Mounted | Instrument or probe mounted on a process tool for in-situ measurement of wafer temperature), thin film thickness, plasma conditions or other process parameters. Instruments such as crystal sensor monitors or ellipsometers for monitoring thin film thickness or composition as well as control systems for the cluster tools utilized to fabricate the thin films or semiconductors. | ||
| In-line | Instrument designed for in-line use in a production line or semiconductor fabrication facility. Instrument with an integral wafer handling robot or autoloader that automatically pulls samples from a cassette for inspection. Instruments such as wafer probers, imaging stations, ellipsometers, CD-SEMs, ion mills, C-V systems or diffractometers specifically designed for wafer and thin film in-line inspection after semiconductor processing steps. | ||
| Floor Mounted / Stand-alone | Floor mounted or stand-alone systems or instruments are larger units usually dedicated to a specific inspection or analysis task in production or research applications. | ||
| Manual Loading | Manually loaded units are usually used off-line in research type applications. Small benchtop systems systems are typically manually loaded. | ||
| Other | Other loading method not listed. | ||
| Search Logic: | All products with ANY of the selected attributes will be returned as matches. Leaving all boxes unchecked will not limit the search criteria for this question; products with all attribute options will be returned as matches. | ||
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Applications
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| Semiconductor Wafers | Instruments for inspection or metrology of bare wafers of silicon or other materials. These instruments check for warp, bow, flatness, thickness variations, roughness, waviness and resistivity or compositional variations. | ||
| CVD / PVD Films | Ex-situ inspection or in-situ process monitoring of thin films produced by chemical vapor deposition (CVD), physical vapor deposition (PVD - sputtering, evaporation) or other related processes. | ||
| Data Storage / Memory | Ex-situ inspection or in-situ process monitoring of thin films or surfaces produced for memory or data storage components such as magnetic media, optical drive disks or read/write heads. | ||
| Electroplated Films | Ex-situ inspection or in-situ process monitoring of thin films produced by electrochemical or electroplating techniques. | ||
| Etching - Plasma / Wet | Instruments measuring or monitoring plasma or wet chemical etching processes on thin films, wafers or other surfaces. | ||
| Flat Panel Displays | Instruments measuring or monitoring flat panel displays thin film processes or resulting surfaces. | ||
| Optical Components | Instruments used for inspection or process monitoring of optical thin films and surfaces such as anti-reflective coatings, reflective films, refractive index modifiers or transparent wear resistance layer that are applied to optical components such as lenses, optical fibers or masks. | ||
| Oxidation / RTP | Ex-situ inspection or in-situ process monitoring of oxidized silicon layers produced by conventional furnace annealing or rapid thermal processing. | ||
| Packaged ICs / Ceramic Substrates | Instruments for inspection or metrology of substrates used to fabricate thick or thin film resistors, package IC chips as well as ceramic product surfaces for wear, process, optical or thermal applications. Packaged ICs are chips diced from wafers that have been encapsulated or bonded to a polymer or ceramic package with interconnections for placement on PCBs. | ||
| Photolithography / Patterning | Instruments used for the inspection of patterned wafers, photolithography masks, reticles and overlay registration or alignment. | ||
| Polishing / CMP | Ex-situ inspection of polished bared wafer, head surfaces or chemical-mechanical planarized (CMP) deposited films. | ||
| Polymers / Photoresists | Ex-situ inspection or in-situ process monitoring of thin polymer films or the photoresist layers used in patterning wafers. | ||
| Other | Other instrumentation not listed for ex-situ inspection or in-situ process monitoring of thin films or semiconductor wafers. | ||
| Search Logic: | All products with ANY of the selected attributes will be returned as matches. Leaving all boxes unchecked will not limit the search criteria for this question; products with all attribute options will be returned as matches. | ||
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Measurement Capability
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| Composition | Instruments providing qualitative or quantitative information on the chemical or elemental composition of thin films, substrates or wafers. Composition analysis can provide an unambiguous indication of dopant type. | ||
| Critical Dimension / Trench Geometry | Critical dimension measurement is the smallest feature size of the transistor or device controlling function or performance. Critical dimensions are gaged with instruments providing high spatial resolution of a surface such as CD-SEMs or specialized optical imaging systems. Instruments such as FIBs or profilometers are used to measure of the depth or dimensions of trenches or junctions. | ||
| Defects / ADC | Instruments with the ability to detect residual traces of films or depressions (dimple defects) or patterned conductor or pad flaws on the surface of a substrate or wafer after polishing, CMP, etching or other processes. Instruments with Automatic defect classification (ADC) hav image processors and software algorithms that can determine the type of defect on a wafer or device. | ||
| Dielectric Properties | Instruments used to measure the dielectric properties (dielectric constant, strength and loss tangent) of insulating thin films, oxide layers or substrates. | ||
| Dopant Level / Resistivity | Instruments used to determine the type of semiconductor (n or p) or the level of dopant or carriers in a semiconductor. Resistivity measurements with an electrical probe are one technique employed to confirm wafer type. | ||
| Particle Contamination | Instruments with the capability to detect and characterize particle contamination on thin film or semiconductor wafers. Characterization may include size and particle count measurements of spots or full depositions of particulates. | ||
| Thickness - Film / Layer | Instruments capable of measuring the thickness of metal thin films, oxidized layers or ion implantation zones. | ||
| Other | Other measurement capability not listed such instruments used to detect the carrier type (n or p) of a semiconductor, measure film or substrate porosity or density or to monitor the temperature of wafers or thin films during the deposition or treatment processes. | ||
| Search Logic: | All products with ANY of the selected attributes will be returned as matches. Leaving all boxes unchecked will not limit the search criteria for this question; products with all attribute options will be returned as matches. | ||
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| Area Mapping? | Instruments with the ability to spatially map the value of a parameter over the area of a wafer surface or thin film deposit. | ||
| Search Logic: | "Required" and "Must Not Have" criteria limit returned matches as specified. Products with optional attributes will be returned for either choice. | ||
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| Depth Profiling? | Instruments with the ability to provide the variation of a parameter such as concentration with respect to depth into the wafer or thin film deposit. | ||
| Search Logic: | "Required" and "Must Not Have" criteria limit returned matches as specified. Products with optional attributes will be returned for either choice. | ||
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| Maximum Wafer / Part Size: | The maximum size or diameter of the wafer, disk or substrate that can be monitored or inspected with the instrumentation. | ||
| Search Logic: | All matching products will have a value greater than or equal to the specified value. | ||
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