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Noncontact Infrared Temperature Sensors - Cambridge CMOS Single Channel MEMS SOI Thermopile DetectorSupplier: Electro Optical Components, Inc.
Description: . The most sensitive thermopile (higher Detectivity) is made from bismuth-antimony (BiSb) instead of silicon. Thermopile detectors are voltage-generating devices, which can be thought of as miniature arrays of thermocouple junctions. Micro-Hybrid GmbH is certified to TS
- Detectivity: 0.3800 to 0.4200 10^8cmHz^(½)/W
- Device Category: Sensor / Transducer
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Supplier: Utmel Electronic Limited
Description: FPGA - Field Programmable Gate Array 34K LUTs SERDES MEM DSP 1.2V -6Spd
- IC Package Type: Other
- Internal Frequency: 357 MHz
- Logic Cells / Logic Blocks: 34000
- Operating Temperature: 0.0 to 85 C
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Supplier: Utmel Electronic Limited
Description: FPGA - Field Programmable Gate Array 34K LUTs S-Ser SERDE S Mem DSP 1.2V -6
- IC Package Type: Other
- Internal Frequency: 320 MHz
- Logic Cells / Logic Blocks: 34000
- Operating Temperature: 0.0 to 85 C
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Supplier: Silicon Designs, Inc.
Description: SDI's Models 2210, 2260, and 2266 Low Cost Single-Axis MEMS DC Accelerometers are rugged plug-and-play measurement devices for suitable for a wide array of demanding applications. All three models excel in zero-to-medium frequency industrial applications, particularly where reliable
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Supplier: Silicon Designs, Inc.
Description: Silicon Designs Model 1521 Industrial-Grade Surface Mount MEMS DC Accelerometers are rugged and accurate sensors suitable for a wide array of demanding applications. Available in ranges from ±2g to ±400g, and in both leadless LCC and J-Lead packages, the Model 1521 excels in zero
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Supplier: Silicon Designs, Inc.
Description: The Model 2422H Specialty Hermetic MEMS DC Accelerometer from Silicon Designs (SDI) is low-cost, integrated plug-and-play measurement device suitable for a wide array of demanding applications where power supply options are limited to +5 V DC. The 2422H provides enhanced performance
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Supplier: VAST STOCK CO., LIMITED
Description: FPGA - Field Programmable Gate Array 34K LUTs SERDES MEM DSP 1.2V -7 Spd
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Supplier: VAST STOCK CO., LIMITED
Description: FPGA - Field Programmable Gate Array 34K LUTs SERDES MEM DSP 1.2V -6Spd
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Supplier: VAST STOCK CO., LIMITED
Description: FPGA - Field Programmable Gate Array 34K LUTs SERDES MEM DSP 1.2V -6 Spd
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Supplier: VAST STOCK CO., LIMITED
Description: FPGA - Field Programmable Gate Array 34K LUTs SERDES MEM DSP 1.2V -5 Spd
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Supplier: Utmel Electronic Limited
Description: FPGA - Configuration Memory IC - Ser. Config Mem Flash 128Mb 50 MHz
- IC Package Type: SOIC, Other
- Internal Frequency: 20 MHz
- Logic Family: Standard CMOS / CMOS 4000, Other
- Operating Current: 0.0200 milliamps
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Supplier: Infineon Technologies AG
Description: High performance analog XENSIV™ MEMS microphone The IM68A130 is a high performance, single-ended, analog MEMS microphone designed for applications which require a low LFRO (10Hz), a high SNR (low self-noise), and low distortion (high AOP). The high signal-to-noise ratio (SNR
- Operating / Polarization Voltage: 2.4 to 3.6 volts
- Signal to Noise Ratio: 68 dB
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Supplier: Infineon Technologies AG
Description: -microphone (array) applications. This microphone is based on Infineon’s new Sealed Dual Membrane MEMS technology which delivers high ingress protection (IP57) at a microphone level. The powerful mix of ultra-high SNR and high sensitivity empowers high quality audio capturing for voice
- Features: Digital Microphone
- Operating / Polarization Voltage: 1.62 to 3.6 volts
- Signal to Noise Ratio: 73 dB
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Supplier: Infineon Technologies AG
Description: digital microphone designed for applications which require a very high SNR (low self-noise) and low distortions (high AOP). This microphone is based on Infineon’s new Sealed Dual Membrane MEMS technology which delivers high ingress protection (IP57) at a microphone level. The flat frequency
- Features: Digital Microphone
- Operating / Polarization Voltage: 1.62 to 3.6 volts
- Signal to Noise Ratio: 72 dB
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Supplier: Infineon Technologies AG
Description: IM72D128V – Ultra-low power digital XENSIV™ MEMS microphone Discover the IM72D128V, an ultra-high performance XENSIV™ MEMS microphone designed for applications which require a digital PDM MEMS microphone with high SNR (low self-noise), low distortion (high AOP
- Features: Digital Microphone
- Operating / Polarization Voltage: 1.62 to 3.6 volts
- Signal to Noise Ratio: 71.5 dB
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Supplier: HUBER+SUHNER AG
Description: Features 23 x 10 x 6 mm size low PDL very fast 0-5 V control single or dual channel Applications Power management in DWDM transceivers Amplifier gain control Array integration and optical subsystems
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Supplier: HUBER+SUHNER AG
Description: Features 23 x 10 x 6 mm size Low Cost TTL or CMOS logic latching or non-latching 2x2, 2x1, 1x1 variants single or multimode Applications Protection Switching Reconfiguration Optical Subsystems Array integration
- Cable Type: Single Mode / Multimode
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Supplier: Transcat, Inc.
Description: waveform recording and sequence acquisition allow for extended waveform records to be captured, stored, and analyzed. An impressive array of measurement and math capabilities, options for a built-in 25 MHz arbitrary waveform generator, 16 digital channels (MSO), as well as serial decoding are
- Bandwidth: 100 MHz
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Supplier: Transcat, Inc.
Description: waveform recording and sequence acquisition allow for extended waveform records to be captured, stored, and analyzed. An impressive array of measurement and math capabilities, options for a built-in 25 MHz arbitrary waveform generator, 16 digital channels (MSO), as well as serial decoding are
- Bandwidth: 200 MHz
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Supplier: Transcat, Inc.
Description: waveform recording and sequence acquisition allow for extended waveform records to be captured, stored, and analyzed. An impressive array of measurement and math capabilities, options for a built-in 25 MHz arbitrary waveform generator, 16 digital channels (MSO), as well as serial decoding are
- Bandwidth: 100 MHz
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Supplier: Transcat, Inc.
Description: waveform recording and sequence acquisition allow for extended waveform records to be captured, stored, and analyzed. An impressive array of measurement and math capabilities, options for a built-in 25 MHz arbitrary waveform generator, 16 digital channels (MSO), as well as serial decoding are
- Bandwidth: 300 MHz
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Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: AMIS Category: Discrete Semiconductor Products>Transistors >Bipolar (BJT)>Bipolar Transistor Arrays, Pre-Biased Part Status: Obsolete Base Resonator: MEMS Frequency: 1MHz ~ 650MHz Function: Multiple
- Package Type: SOT3
- Transistor Type: CMOS
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Supplier: Honeywell Sensing & IoT
Description: The Transportation Attitude Reference System (TARS-IMU) is a packaged sensor array designed to report vehicle angular rate, acceleration, and attitude data for demanding applications in industries such as heavy-duty, off-highway transportation. The TARS-IMU enables autonomous vehicle
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Supplier: Honeywell Sensing & IoT
Description: The Transportation Attitude Reference System (TARS-IMU) is a packaged sensor array designed to report vehicle angular rate, acceleration, and attitude data for demanding applications in industries such as heavy-duty, off-highway transportation. The TARS-IMU enables autonomous vehicle
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Description: IC FPGA 256K CONFIG MEM 8SOIC
- IC Package Type: SOIC
- Operating Temperature: 0.0 to 70 C
- Supply Voltage: 3.6 V, Other
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Description: IC FPGA 256K CONFIG MEM 8DIP
- Operating Temperature: 0.0 to 70 C
- Supply Voltage: 3.6 V, Other
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Description: IC FPGA 2M CONFIG MEM 44TQFP
- IC Package Type: QFP, TQFP
- Operating Temperature: -40 to 85 C
- Supply Voltage: 3.6 V, Other
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Description: IC FPGA 512K CONFIG MEM 8DIP
- Operating Temperature: 0.0 to 70 C
- Supply Voltage: 3.6 V, Other
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Supplier: Quarktwin Technology Ltd.
Description: IC FPGA 1M CONFIG MEM 10MHZ 8DIP
- IC Package Type: Other
- Operating Temperature: 0.0 to 70 C
- Size: 8 Mbits
- Supply Voltage: Other
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Supplier: Quarktwin Technology Ltd.
Description: IC FPGA 512K CONFIG MEM 8DIP
- IC Package Type: Other
- Operating Temperature: -40 to 85 C
- Size: 4.1 Mbits
- Supply Voltage: Other
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Supplier: Quarktwin Technology Ltd.
Description: IC FPGA 512K CONFIG MEM 20SOIC
- IC Package Type: SOIC, Other
- Operating Temperature: 0.0 to 70 C
- Size: 4.1 Mbits
- Supply Voltage: Other
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Supplier: Quarktwin Technology Ltd.
Description: IC FPGA 2M CONFIG MEM 44TQFP
- IC Package Type: QFP, TQFP, Other
- Operating Temperature: -40 to 85 C
- Size: 16 Mbits
- Supply Voltage: Other
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Supplier: Kionix, Inc.
Description: These high-performance silicon micromachined linear accelerometers and inclinometers consist of a sensor element and an ASIC packaged in a 3x3x0.9mm Land Grid Array Dual (LGA). The sensor element is fabricated from single-crystal silicon with proprietary Deep Reactive Ion Etching (DRIE
- Acceleration: 2 to 8 g
- Device Type: Sensor / Transducer
- Features: Sealed
- Frequency Range: 50 to 2000 Hz
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Supplier: SAE International
Description: The authors report on the design and application of a high resolution micro-electro-mechan ical (MEMS) microphone array for automotive wind noise engineering. The array integrates both sensors and random access memory (RAM) chips on a flexible circuit board that eliminates high
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Supplier: Kionix, Inc.
Description: These high-performance silicon micromachined linear accelerometersand inclinometers consist of a sensor element and an ASIC packaged in a3x3x0.9mm Land Grid Array (LGA). The sensor element is fabricated fromsingle-crystal silicon with proprietary Deep Reactive Ion Etching(DRIE) processes, and
- Acceleration: 2 g
- Device Type: Sensor / Transducer, Switch
- Features: Sealed, Self Test / Diagnostics / Self Calibrating
- Frequency Range: 2000 Hz
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Supplier: Kionix, Inc.
Description: These high-performance silicon micromachined linear accelerometersand inclinometers consist of a sensor element and an ASIC packaged in a3x5x0.9mm Land Grid Array (LGA). The sensor element is fabricated fromsingle-crystal silicon with proprietary Deep Reactive Ion Etching(DRIE) processes and
- Acceleration: 2 g
- Device Type: Sensor / Transducer
- Features: Sealed, Self Test / Diagnostics / Self Calibrating
- Frequency Range: 1000 Hz
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Supplier: Kionix, Inc.
Description: external filter capacitors. The auxiliary input provides access to the embedded A/D converter.These high-performance silicon-micromachine d linear sensors consist of a sensor element and an ASIC packaged in a 3x3x0.9mm Land Grid Array (LGA). The sensor element is fabricated from single
- Acceleration: 2 to 8 g
- Device Type: Sensor / Transducer
- Features: Sealed, Self Test / Diagnostics / Self Calibrating
- Frequency Range: 1800 to 3500 Hz
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Supplier: HG Optronics, Inc.
Description: distance range. With our experienced optical design engineers, HG OPTRONICS can also provide custom designed C-lens per customer's requirement. 1.1. Application Collimator Isolator Switch MEMS Collimator Array Laser Assembly
- Surface Quality: 40-20 Scratch / Dig, Other
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in real time. Flexible analyses - a wide array of quantitative results, data views, and filters are included. In-depth analysis - highly interactive and visual analysis tools provide provides a method for local data inspection and measurement comparisons (read more)
Browse Image Analysis Software Datasheets for Zygo Corporation -
trigger waveform sequence profiles) and a Virtual Front Panel GUI (with Status Logger, Constant Power Limit simulator and Solar Array simulator). The Programmable DC Power Supply platforms have Safety certifications to IEC/EN/UL/cUL 61010-1, are CE marked in (read more)
Browse AC-DC Adapters Datasheets for TDK-Lambda Americas Inc.
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Using MEMS to Control Blending at AstraZeneca
previously been used for on-line blend monitoring using instruments based on diode array and acousto-optical tunable filter technologies. (6) This paper discusses the application of a MEMS-based NIR spectrometer for on-line monitoring of powder blending in a rotating bin blender. MEMS is an acronym
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
and working capital and to partially refinance earlier loans. Sarcon awards MEMS thermal sensor contract to Sarnoff PRINCETON, New Jersey -- Sarcon Microsystems Inc. has awarded a production contract for a 320 x 240 microelectromechanical (MEMS) infrared sensor array to Sarnoff Corp., according to the two
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http://dspace.mit.edu/openaccess-disseminate/1721.1/59347
The beam travel distance is almost an order of magnitude larger than the length of the active area of the array perpendicular to the slots (1 cm), which allows modeling the MEMS array as a point source.
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http://repository.kulib.kyoto-u.ac.jp/dspace/bitstream/2433/126817/2/D_Oba_Masatoshi.pdf
Chapter 1 Design and fabrication of high-sensitive infrared MEMS array sensor .
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Encyclopedia of Nanotechnology
In this section, materials and processing aspects involved in fabricating the IMOD MEMS array glass panel are examined.
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Photonic Microsystems
Finally, the small size of the MEMS array leads to a compact system design.
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MEMS-based sensor arrays for military applications
MEMS sensor arrays and the motivation for MEMS arrays are presented in Sections 3 and 4, respectively.
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Laboratory directed research and development annual
report : 2005.
We made substantial progress within the five key areas of this project: (1) through-wafer vias, (2) pixel control and drive electronics, (3) MEMS chip-to-electronics chip attachment, (4) optical MEMS array test and char- acterization, and (5) overall microsystem integration.
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MEMS-Assisted Cryptography for CPI Protection
For example, our MEMS-assisted anti-tamper (MAAT) system doesn’t re- quire specialized processors, coatings, or application code modifications.Rather,thecriticalelementisadistributed microelectromechanical systems ( MEMS ) array whose electromechanical signature serves as the basis for a cryp- tographic key seed.
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Spatial characteristics of evoked potentials elicited by a MEMS microelectrode array for suprachoroidal-transretinal stimulation in a rabbit
Implantation surgery of MEMS array and evaluation .
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MEMS Materials and Processes Handbook
In both of these systems, large MEMS arrays had to be built, assembled, packaged and tested for space.
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Adaptive RF Front-Ends for Hand-held Applications
As a bottom-up approach, we will now treat the design of an RF-MEMS unit cell, a 5-bit RF- MEMS array constructed out of such unit cells, and the high-voltage generator.
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