ROHM Semiconductor GmbH

The BS2132F is a monolithic bridge driver IC, which can drive external Nch-FET and IGBT driver in 3 phase systems with bootstrap operations. 600V high voltage bootstrap diode is integrated between the VCC pin and the VB pins. Read more...

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Richardson RFPD

The Half-Bridge Gate-Drive Power Supply Reference Design (RD) consists of a half-bridge suitable for voltages up to 1kV and a fully-isolated driver stage with isolated power supplies for the low-side and the high-side switching transistors. It is suitable for single gate/drive supply voltages as low as +4V as well as dual gate drive supply voltages as high as +20V / -5V (30V max) with no... Read more...

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Richardson RFPD

Tamura’s 2DM series integrates a dedicated DC-DC converter and a gate drive circuit. The series corresponds to various power modules by adding an external gate resistor of your choice. Features include: fast response (100ns typical), low common mode noise (parasitic capacitance: 15pF typical) and over current protection by DESAT detection.

Features:

• ALL-IN-ONE... Read more...

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Richardson RFPD

Click here to request samples from Richardson RFPD for Power Integrations' SCALE-iDriver™ Family of gate driver ICs. These single-channel IGBT and MOSFET drivers come in a standard eSOP package. Reinforced galvanic isolation is delivered using Power Integrations’ innovative solid insulator FluxLink™ technology. Output drive current up to 8 A (peak) enables the product t... Read more...

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Richardson RFPD

Peregrine's UltraCMOS® PE29102 high-speed FETdriver brings the industry's fastest switching speeds to Gallium Nitride (GaN) Class-D audio. With a switching frequency up to 40 MHz, the PE29102 delivers the industry's fastest switching speeds, empowering design engineers to extract the full performance and switching speed advantages from GaN transistors. In class-D audio amplifiers, th... Read more...

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Richardson RFPD

The PE29102 is an integrated high-speed driver designed to control the gates of external power devices, such as enhancement mode gallium nitride (eGaN®) FETs. The outputs of the PE29102 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. The PE29102 is optimized for matched dead time and offers best-in-c... Read more...

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