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Parallel FRAM Memory Chips

31 Results
Memories - F-RAM (Ferroelectric RAM) - FM22L16-55-TG -- FM22L16-55-TG
from Infineon Technologies AG

Experience over 151 years of data retention with the FM22L16 256K × 16 nonvolatile memory. Its fast write timing, high endurance, and nonvolatile nature eliminate reliability concerns, making it an ideal drop-in replacement for standard SRAM, ensuring superior performance in applications... [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: PG-TSOP-44
  • Density: 4096
  • Supply Voltage: 2.7V; 3.6V; 2.7 V, 3.6 V
Memory -- CY15B101N-ZS60XA [CY15B101N-ZS60XA from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 1Mbit Parallel 90 ns 44-TSOP II [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: 44-TSOP (0.400\", 10.16mm Width)
  • Density: 1000
  • Supply Voltage: 3.6V; 2V ~ 3.6V
Integrated Circuits -- MB85R256FPNF-G-JNERE2
from LIXINC Electronics Co., Limited

IC FRAM 256KBIT PARALLEL 28SOP [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: SOIC; Tape & Reel (TR)Cut Tape (CT)Digi-Reel庐
  • Density: 256
  • Supply Voltage: 2.7V ~ 3.6V
1242979 [FM16W08-SG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Bus Type: Parallel; Parallel
  • Data Bus Width: 8
  • Density: 64
  • Package Type: SOIC
Memory -- CY15B101N-ZS60XE [CY15B101N-ZS60XE from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 1Mbit Parallel 90 ns 44-TSOP II [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: 44-TSOP (0.400\", 10.16mm Width)
  • Density: 1000
  • Supply Voltage: 3.6V; 2V ~ 3.6V
1242981 [FM1808B-SG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Bus Type: Parallel; Parallel
  • Data Bus Width: 8
  • Density: 256
  • Package Type: SOIC
Memory -- FM1608B-PG [FM1608B-PG from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 64Kbit Parallel 28-DIP [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: DIP; 28-DIP (0.600\", 15.24mm)
  • Density: 64
  • Supply Voltage: 4.5V ~ 5.5V
1242992 [FM28V202A-TG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Bus Type: Parallel; Parallel
  • Data Bus Width: 16
  • Density: 2000
  • Package Type: TSOP
Memory -- FM1608B-PG [FM1608B-PG from Ramtron International Corporation]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 64Kbit Parallel 28-DIP [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: DIP; 28-DIP (0.600\", 15.24mm)
  • Density: 64
  • Supply Voltage: 4.5V ~ 5.5V
1254205 [FM18W08-SG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: SOIC
  • Density: 256
  • Pins: 28
Memory -- FM1608B-SG [FM1608B-SG from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 64Kbit Parallel 28-SOIC [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: SOIC; 28-SOIC (0.295\", 7.50mm Width)
  • Density: 64
  • Supply Voltage: 4.5V ~ 5.5V
1254206 [FM22L16-55-TG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: TSOP
  • Density: 4000
  • Pins: 44
Memory -- FM18W08-SG [FM18W08-SG from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 28-SOIC [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: SOIC; 28-SOIC (0.295\", 7.50mm Width)
  • Density: 256
  • Supply Voltage: 2.7V ~ 5.5V
1254229 [FM28V020-SG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: SOIC
  • Density: 256
  • Pins: 28
Memory -- FM21L16-60-TG [FM21L16-60-TG from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 2Mbit Parallel 110 ns 44-TSOP II [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: 44-TSOP (0.400\", 10.16mm Width)
  • Density: 2000
  • Supply Voltage: 3.6V; 2.7V ~ 3.6V
1254230 [FM28V020-TG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: TSOP
  • Density: 256
  • Pins: 32
Memory -- FM21L16-60-TGTR [FM21L16-60-TGTR from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 2Mbit Parallel 110 ns 44-TSOP II [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: 44-TSOP (0.400\", 10.16mm Width)
  • Density: 2000
  • Supply Voltage: 3.6V; 2.7V ~ 3.6V
1254231 [FM28V100-TG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: TSOP
  • Density: 1000
  • Pins: 32
Memory -- FM21LD16-60-BG [FM21LD16-60-BG from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 2Mbit Parallel 110 ns 48-FBGA (6x8) [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: BGA; 48-TFBGA
  • Density: 2000
  • Supply Voltage: 3.6V; 2.7V ~ 3.6V
7165735 [FM28V100-TG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Bus Type: Parallel; Parallel
  • Data Bus Width: 8
  • Density: 1000
  • Package Type: TSOP
Memory -- FM22LD16-55-BG [FM22LD16-55-BG from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 4Mbit Parallel 110 ns 48-FBGA (6x8) [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: BGA; 48-TFBGA
  • Density: 4000
  • Supply Voltage: 3.6V; 2.7V ~ 3.6V
8282831 [FM28V020-TG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Bus Type: Parallel; Parallel
  • Data Bus Width: 8
  • Density: 256
  • Package Type: TSOP
Memory -- FM28V020-T28G [FM28V020-T28G from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 140 ns 28-TSOP I [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: SSOP; TSSOP; 28-TSSOP (0.465\", 11.80mm Width)
  • Density: 256
  • Supply Voltage: 3.6V; 2V ~ 3.6V
Memory -- FM28V020-TG [FM28V020-TG from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 140 ns 32-sTSOP [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: 32-TFSOP (0.465\", 11.80mm Width)
  • Density: 256
  • Supply Voltage: 3.6V; 2V ~ 3.6V
Memory -- FM28V100-TG [FM28V100-TG from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 1Mbit Parallel 90 ns 32-TSOP I [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: 32-TFSOP (0.465\", 11.80mm Width)
  • Density: 1000
  • Supply Voltage: 3.6V; 2V ~ 3.6V
Memory -- MB85R1001ANC-GE1 [MB85R1001ANC-GE1 from KAGA FEI AMERICA, INC.]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 1Mbit Parallel 150 ns 48-TSOP [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: 48-TFSOP (0.488\", 12.40mm Width)
  • Density: 1000
  • Supply Voltage: 3.6V; 3V ~ 3.6V
Memory -- MB85R256FPF-G-BND-ERE1 [MB85R256FPF-G-BND-ERE1 from KAGA FEI AMERICA, INC.]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 150 ns 28-SOP [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: SOIC; 28-SOIC (0.295\", 7.50mm Width)
  • Density: 256
  • Supply Voltage: 3.6V; 2.7V ~ 3.6V
Memory -- MB85R256FPFCN-G-BNDE1 [MB85R256FPFCN-G-BNDE1 from KAGA FEI AMERICA, INC.]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 150 ns 28-TSOP I [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: SSOP; TSSOP; 28-TSSOP (0.465\", 11.80mm Width)
  • Density: 256
  • Supply Voltage: 3.6V; 2.7V ~ 3.6V
Memory -- MB85R4M2TFN-G-ASE1 [MB85R4M2TFN-G-ASE1 from KAGA FEI AMERICA, INC.]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 4Mbit Parallel 150 ns 44-TSOP [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: 44-TSOP (0.400\", 10.16mm Width)
  • Density: 4000
  • Supply Voltage: 3.6V; 1.8V ~ 3.6V
Memory -- MB85R8M2TPBS-M-JAE1 [MB85R8M2TPBS-M-JAE1 from KAGA FEI AMERICA, INC.]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 8Mbit Parallel 150 ns 48-FBGA (8x6) [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: BGA; 48-VFBGA
  • Density: 8000
  • Supply Voltage: 3.6V; 1.8V ~ 3.6V
Memory -- MR48V256ATAZBARL [MR48V256ATAZBARL from ROHM Semiconductor USA, LLC]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 70 ns 28-TSOP I [See More]

  • Bus Type: Parallel; Parallel
  • Package Type: SSOP; TSSOP; 28-TSSOP (0.465\", 11.80mm Width)
  • Density: 256
  • Supply Voltage: 3.6V; 3V ~ 3.6V