3.6 V FRAM Memory Chips

1242983 [FM24V02A-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 256
  • Package Type: SOIC
1242985 [FM25V01A-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 128
  • Package Type: SOIC
1242986 [FM25V02A-DG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 256
  • Package Type: DFN
1242988 [FM25V10-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 1000
  • Package Type: SOIC
1242989 [FM25V20A-DG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 2000
  • Package Type: DFN
1242990 [FM25V20A-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 2000
  • Package Type: SOIC
1242991 [FM25VN10-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 1000
  • Package Type: SOIC
1254214 [FM24CL64B-GA from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 64
  • Pins: 8
1254215 [FM24V10-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 1000
  • Pins: 8
1254216 [FM24VN10-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 1000
  • Pins: 8
1254223 [FM25CL64B-GA from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 64
  • Pins: 8
1254224 [FM25L04B-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 4
  • Pins: 8
1254225 [FM25L04B-GA from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 4
  • Pins: 8
1254226 [FM25L16B-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 16
  • Pins: 8
1254227 [FM25V05-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 512
  • Pins: 8
1254229 [FM28V020-SG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 256
  • Pins: 28
1254235 [FM31L278-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM Memory. Real-time Clock (RTC). Low Voltage Reset. Watchdog Timer. Early Power-Fail Warning/NMI. Two 16-bit Event Counters. Serial Number with Write-lock for Security. [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 256
  • Pins: 14
1254236 [FM33256B-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM Memory. Real-time Clock (RTC). Low Voltage Reset. Watchdog Timer. Early Power-Fail Warning/NMI. Two 16-bit Event Counters. Serial Number with Write-lock for Security. [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 256
  • Pins: 14
7165763 [FM31L278-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM Memory. Real-time Clock (RTC). Low Voltage Reset. Watchdog Timer. Early Power-Fail Warning/NMI. Two 16-bit Event Counters. Serial Number with Write-lock for Security. [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 256
  • Package Type: SOIC
7965327 [TC58BVG0S3HBAI4 from Toshiba Imaging Systems Division]
from RS Components, Ltd.

BENAND â „ ¢ is SLC (Single Level Cell) NAND Flash Memory with build in ECC (Error Correction Code). Memory Size = 1Gbit. Organisation = 2048 x 8 bit. Data Bus Width = 8bit. Maximum Random Access Time = 120 µs. Mounting Type = Surface Mount. Package Type = TFBGA. Pin Count =... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 1000000
  • Package Type: TFBGA
7965336 [TC58BVG1S3HTAI0 from Toshiba Imaging Systems Division]
from RS Components, Ltd.

BENAND â „ ¢ is SLC (Single Level Cell) NAND Flash Memory with build in ECC (Error Correction Code). Memory Size = 2Gbit. Organisation = 2048 x 8 bit. Data Bus Width = 8bit. Maximum Random Access Time = 40 µs. Mounting Type = Surface Mount. Package Type = TSOP. Pin Count = 48. [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 2000000
  • Package Type: TSOP
8282780 [FM24V01-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 128
  • Package Type: SOIC
8282815 [FM25V01-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 128
  • Package Type: SOIC