3.6 V FRAM Memory Chips

29 Results
EXCELON™ F-RAM -- CY15B104QSN-108LPXI
from Infineon Technologies AG

Applications. Bringing a whole new lifestyle and health experience to today ’s connected citizen [See More]

  • Supply Voltage: 1.8V; 3.6V; 1.8 V, 3.6 V
  • Package Type: PG-VQFN-8
  • Density: 4096
  • Operating Temperature: -40 to 85
Memories - F-RAM (Ferroelectric RAM) - EXCELON™ F-RAM - CY15B108QI-20BFXA -- CY15B108QI-20BFXA
from Infineon Technologies AG

Home // Products // Memories // F-RAM (Ferroelectric RAM) // EXCELON ™ F-RAM // CY15B108QI-20BFXA [See More]

  • Supply Voltage: 1.8V; 3.6V; 1.8 V, 3.6 V
  • Package Type: PG-UFLGA-8
  • Density: 8000
  • Operating Temperature: -40 to 85
Memories - F-RAM (Ferroelectric RAM) - EXCELON™ F-RAM - CY15B116QN-40BKXA -- CY15B116QN-40BKXA
from Infineon Technologies AG

Home // Products // Memories // F-RAM (Ferroelectric RAM) // EXCELON ™ F-RAM // CY15B116QN-40BKXA [See More]

  • Supply Voltage: 1.8V; 3.6V; 1.8 V, 3.6 V
  • Package Type: PG-BGA-24
  • Density: 16000
  • Operating Temperature: -40 to 85
Memories - F-RAM (Ferroelectric RAM) - EXCELON™ F-RAM - CY15B204QSN-108SXE -- CY15B204QSN-108SXE
from Infineon Technologies AG

EXCELON ™ Auto F-RAM CY15B204QSN-108SXE is a high-performance, AEC-Q100 qualified 4-Mbit non-volatile memory, designed for high-reliability automotive applications with temperature support up to +125 °C. Equipped with high-speed, low-pin-count QSPI interface, it offers read/write... [See More]

  • Supply Voltage: 1.8V; 3.6V; 1.8 V, 3.6 V
  • Package Type: PG-DSO-8
  • Density: 4000
  • Operating Temperature: -40 to 125
Memory -- CY15B004J-SXE [CY15B004J-SXE from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 4Kbit I ²C 3.4 MHz 8-SOIC [See More]

  • Supply Voltage: 3.6V; 3V ~ 3.6V
  • Package Type: SOIC; 8-SOIC (0.154\", 3.90mm Width)
  • Density: 4
  • Operating Temperature: -40 to 125
Memory -- CY15B101N-ZS60XA [CY15B101N-ZS60XA from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 1Mbit Parallel 90 ns 44-TSOP II [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: 44-TSOP (0.400\", 10.16mm Width)
  • Density: 1000
  • Access Time: 90
Memory -- CY15B101N-ZS60XE [CY15B101N-ZS60XE from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 1Mbit Parallel 90 ns 44-TSOP II [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: 44-TSOP (0.400\", 10.16mm Width)
  • Density: 1000
  • Access Time: 90
Memory -- CY15B102Q-SXA [CY15B102Q-SXA from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 2Mbit SPI 25 MHz 8-SOIC [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: SOIC; 8-SOIC (0.209\", 5.30mm Width)
  • Density: 2000
  • Operating Temperature: -40 to 85
Memory -- CY15B102Q-SXE [CY15B102Q-SXE from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 2Mbit SPI 25 MHz 8-SOIC [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: SOIC; 8-SOIC (0.209\", 5.30mm Width)
  • Density: 2000
  • Operating Temperature: -40 to 125
Memory -- CY15B102QN-50PZXI [CY15B102QN-50PZXI from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 2Mbit SPI 50 MHz 8 ns 8-PDIP [See More]

  • Supply Voltage: 3.6V; 1.8V ~ 3.6V
  • Package Type: DIP; 8-DIP (0.300\", 7.62mm)
  • Density: 2000
  • Access Time: 8
Memory -- CY15B102QN-50SXE [CY15B102QN-50SXE from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 2Mbit SPI 50 MHz 8-SOIC [See More]

  • Supply Voltage: 3.6V; 1.8V ~ 3.6V
  • Package Type: SOIC; 8-SOIC (0.209\", 5.30mm Width)
  • Density: 2000
  • Operating Temperature: -40 to 125
Memory -- CY15B104Q-LHXI [CY15B104Q-LHXI from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 4Mbit SPI 40 MHz 8-DFN (5x6) [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: 8-WDFN Exposed Pad
  • Density: 4000
  • Operating Temperature: -40 to 85
Memory -- CY15B104QI-20LPXC [CY15B104QI-20LPXC from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 4Mbit SPI 20 MHz 8-GQFN (3.23x3.28) [See More]

  • Supply Voltage: 3.6V; 1.8V ~ 3.6V
  • Package Type: 8-UQFN
  • Density: 4000
  • Operating Temperature: 0 to 70
Memory -- CY15B108QN-50BKXI [CY15B108QN-50BKXI from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 8Mbit SPI 50 MHz 9 ns 24-FBGA (6x8) [See More]

  • Supply Voltage: 3.6V; 1.8V ~ 3.6V
  • Package Type: BGA; 24-TBGA
  • Density: 8000
  • Access Time: 9
Memory -- FM21L16-60-TG [FM21L16-60-TG from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 2Mbit Parallel 110 ns 44-TSOP II [See More]

  • Supply Voltage: 3.6V; 2.7V ~ 3.6V
  • Package Type: 44-TSOP (0.400\", 10.16mm Width)
  • Density: 2000
  • Access Time: 110
Memory -- FM21L16-60-TGTR [FM21L16-60-TGTR from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 2Mbit Parallel 110 ns 44-TSOP II [See More]

  • Supply Voltage: 3.6V; 2.7V ~ 3.6V
  • Package Type: 44-TSOP (0.400\", 10.16mm Width)
  • Density: 2000
  • Access Time: 110
Memory -- FM21LD16-60-BG [FM21LD16-60-BG from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 2Mbit Parallel 110 ns 48-FBGA (6x8) [See More]

  • Supply Voltage: 3.6V; 2.7V ~ 3.6V
  • Package Type: BGA; 48-TFBGA
  • Density: 2000
  • Access Time: 110
Memory -- FM22LD16-55-BG [FM22LD16-55-BG from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 4Mbit Parallel 110 ns 48-FBGA (6x8) [See More]

  • Supply Voltage: 3.6V; 2.7V ~ 3.6V
  • Package Type: BGA; 48-TFBGA
  • Density: 4000
  • Access Time: 110
Memory -- FM25V10-GTR [FM25V10-GTR from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 1Mbit SPI 40 MHz 8-SOIC [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: SOIC; 8-SOIC (0.154\", 3.90mm Width)
  • Density: 1000
  • Operating Temperature: -40 to 85
Memory -- FM28V020-SG [FM28V020-SG from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 140 ns 28-SOIC [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: SOIC; 28-SOIC (0.295\", 7.50mm Width)
  • Density: 256
  • Access Time: 140
Memory -- FM28V020-SGTR [FM28V020-SGTR from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 140 ns 28-SOIC [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: SOIC; 28-SOIC (0.295\", 7.50mm Width)
  • Density: 256
  • Access Time: 140
Memory -- FM28V020-T28G [FM28V020-T28G from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 140 ns 28-TSOP I [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: SSOP; TSSOP; 28-TSSOP (0.465\", 11.80mm Width)
  • Density: 256
  • Access Time: 140
Memory -- FM28V020-TG [FM28V020-TG from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 140 ns 32-sTSOP [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: 32-TFSOP (0.465\", 11.80mm Width)
  • Density: 256
  • Access Time: 140
Memory -- FM28V100-TG [FM28V100-TG from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 1Mbit Parallel 90 ns 32-TSOP I [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: 32-TFSOP (0.465\", 11.80mm Width)
  • Density: 1000
  • Access Time: 90
Memory -- MB85R1001ANC-GE1 [MB85R1001ANC-GE1 from KAGA FEI AMERICA, INC.]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 1Mbit Parallel 150 ns 48-TSOP [See More]

  • Supply Voltage: 3.6V; 3V ~ 3.6V
  • Package Type: 48-TFSOP (0.488\", 12.40mm Width)
  • Density: 1000
  • Access Time: 150
Memory -- MB85R256FPF-G-BND-ERE1 [MB85R256FPF-G-BND-ERE1 from KAGA FEI AMERICA, INC.]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 150 ns 28-SOP [See More]

  • Supply Voltage: 3.6V; 2.7V ~ 3.6V
  • Package Type: SOIC; 28-SOIC (0.295\", 7.50mm Width)
  • Density: 256
  • Access Time: 150
Memory -- MB85R256FPFCN-G-BNDE1 [MB85R256FPFCN-G-BNDE1 from KAGA FEI AMERICA, INC.]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 150 ns 28-TSOP I [See More]

  • Supply Voltage: 3.6V; 2.7V ~ 3.6V
  • Package Type: SSOP; TSSOP; 28-TSSOP (0.465\", 11.80mm Width)
  • Density: 256
  • Access Time: 150
Memory -- MB85R4M2TFN-G-ASE1 [MB85R4M2TFN-G-ASE1 from KAGA FEI AMERICA, INC.]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 4Mbit Parallel 150 ns 44-TSOP [See More]

  • Supply Voltage: 3.6V; 1.8V ~ 3.6V
  • Package Type: 44-TSOP (0.400\", 10.16mm Width)
  • Density: 4000
  • Access Time: 150
Memory -- MB85R8M2TPBS-M-JAE1 [MB85R8M2TPBS-M-JAE1 from KAGA FEI AMERICA, INC.]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 8Mbit Parallel 150 ns 48-FBGA (8x6) [See More]

  • Supply Voltage: 3.6V; 1.8V ~ 3.6V
  • Package Type: BGA; 48-VFBGA
  • Density: 8000
  • Access Time: 150