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3.6 V FRAM Memory Chips

50 Results
EXCELON™ F-RAM -- CY15B102QN-50SXE
from Infineon Technologies AG

Experience high-performance automotive-grade 2Mb EXCELON ™ Auto CY15X102QN nonvolatile memory with 121 years of data retention, rapid write operations at bus speed, substantial write endurance, and support for 1013 read/write cycles. Ideal for frequent or rapid writes, it offers hardware... [See More]

  • Supply Voltage: 1.8V; 3.6V; 1.8 V, 3.6 V
  • Package Type: PG-DSO-8
  • Density: 2048
  • Operating Temperature: -40 to 125
1242983 [FM24V02A-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 256
  • Package Type: SOIC
Memory -- CY15B004J-SXE [CY15B004J-SXE from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 4Kbit I ²C 3.4 MHz 8-SOIC [See More]

  • Supply Voltage: 3.6V; 3V ~ 3.6V
  • Package Type: SOIC; 8-SOIC (0.154\", 3.90mm Width)
  • Density: 4
  • Operating Temperature: -40 to 125
Memories - F-RAM (Ferroelectric RAM) - EXCELON™ F-RAM - CY15B104QI-20BFXIT -- CY15B104QI-20BFXIT
from Infineon Technologies AG

Home // Products // Memories // F-RAM (Ferroelectric RAM) // EXCELON ™ F-RAM // CY15B104QI-20BFXIT [See More]

  • Supply Voltage: 1.8V; 3.6V; 1.8 V, 3.6 V
  • Package Type: PG-UFLGA-8
  • Density: 4096
  • Operating Temperature: -40 to 85
1242985 [FM25V01A-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 128
  • Package Type: SOIC
Memory -- CY15B101N-ZS60XA [CY15B101N-ZS60XA from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 1Mbit Parallel 90 ns 44-TSOP II [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: 44-TSOP (0.400\", 10.16mm Width)
  • Density: 1000
  • Access Time: 90
1242986 [FM25V02A-DG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 256
  • Package Type: DFN
Memory -- CY15B101N-ZS60XE [CY15B101N-ZS60XE from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 1Mbit Parallel 90 ns 44-TSOP II [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: 44-TSOP (0.400\", 10.16mm Width)
  • Density: 1000
  • Access Time: 90
1242988 [FM25V10-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 1000
  • Package Type: SOIC
Memory -- CY15B102Q-SXA [CY15B102Q-SXA from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 2Mbit SPI 25 MHz 8-SOIC [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: SOIC; 8-SOIC (0.209\", 5.30mm Width)
  • Density: 2000
  • Operating Temperature: -40 to 85
1242989 [FM25V20A-DG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 2000
  • Package Type: DFN
Memory -- CY15B102Q-SXE [CY15B102Q-SXE from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 2Mbit SPI 25 MHz 8-SOIC [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: SOIC; 8-SOIC (0.209\", 5.30mm Width)
  • Density: 2000
  • Operating Temperature: -40 to 125
1242990 [FM25V20A-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 2000
  • Package Type: SOIC
Memory -- CY15B102QN-50PZXI [CY15B102QN-50PZXI from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 2Mbit SPI 50 MHz 8 ns 8-PDIP [See More]

  • Supply Voltage: 3.6V; 1.8V ~ 3.6V
  • Package Type: DIP; 8-DIP (0.300\", 7.62mm)
  • Density: 2000
  • Access Time: 8
1242991 [FM25VN10-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 1000
  • Package Type: SOIC
Memory -- CY15B102QN-50SXE [CY15B102QN-50SXE from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 2Mbit SPI 50 MHz 8-SOIC [See More]

  • Supply Voltage: 3.6V; 1.8V ~ 3.6V
  • Package Type: SOIC; 8-SOIC (0.209\", 5.30mm Width)
  • Density: 2000
  • Operating Temperature: -40 to 125
1254214 [FM24CL64B-GA from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 64
  • Pins: 8
Memory -- CY15B104Q-LHXI [CY15B104Q-LHXI from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 4Mbit SPI 40 MHz 8-DFN (5x6) [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: 8-WDFN Exposed Pad
  • Density: 4000
  • Operating Temperature: -40 to 85
1254215 [FM24V10-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 1000
  • Pins: 8
Memory -- CY15B104QI-20LPXC [CY15B104QI-20LPXC from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 4Mbit SPI 20 MHz 8-GQFN (3.23x3.28) [See More]

  • Supply Voltage: 3.6V; 1.8V ~ 3.6V
  • Package Type: 8-UQFN
  • Density: 4000
  • Operating Temperature: 0 to 70
1254216 [FM24VN10-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 1000
  • Pins: 8
Memory -- CY15B108QN-50BKXI [CY15B108QN-50BKXI from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 8Mbit SPI 50 MHz 9 ns 24-FBGA (6x8) [See More]

  • Supply Voltage: 3.6V; 1.8V ~ 3.6V
  • Package Type: BGA; 24-TBGA
  • Density: 8000
  • Access Time: 9
1254223 [FM25CL64B-GA from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 64
  • Pins: 8
Memory -- FM21L16-60-TG [FM21L16-60-TG from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 2Mbit Parallel 110 ns 44-TSOP II [See More]

  • Supply Voltage: 3.6V; 2.7V ~ 3.6V
  • Package Type: 44-TSOP (0.400\", 10.16mm Width)
  • Density: 2000
  • Access Time: 110
1254224 [FM25L04B-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 4
  • Pins: 8
Memory -- FM21L16-60-TGTR [FM21L16-60-TGTR from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 2Mbit Parallel 110 ns 44-TSOP II [See More]

  • Supply Voltage: 3.6V; 2.7V ~ 3.6V
  • Package Type: 44-TSOP (0.400\", 10.16mm Width)
  • Density: 2000
  • Access Time: 110
1254225 [FM25L04B-GA from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 4
  • Pins: 8
Memory -- FM21LD16-60-BG [FM21LD16-60-BG from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 2Mbit Parallel 110 ns 48-FBGA (6x8) [See More]

  • Supply Voltage: 3.6V; 2.7V ~ 3.6V
  • Package Type: BGA; 48-TFBGA
  • Density: 2000
  • Access Time: 110
1254226 [FM25L16B-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 16
  • Pins: 8
Memory -- FM22LD16-55-BG [FM22LD16-55-BG from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 4Mbit Parallel 110 ns 48-FBGA (6x8) [See More]

  • Supply Voltage: 3.6V; 2.7V ~ 3.6V
  • Package Type: BGA; 48-TFBGA
  • Density: 4000
  • Access Time: 110
1254227 [FM25V05-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 512
  • Pins: 8
Memory -- FM25V10-GTR [FM25V10-GTR from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 1Mbit SPI 40 MHz 8-SOIC [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: SOIC; 8-SOIC (0.154\", 3.90mm Width)
  • Density: 1000
  • Operating Temperature: -40 to 85
1254229 [FM28V020-SG from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 256
  • Pins: 28
Memory -- FM28V020-SG [FM28V020-SG from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 140 ns 28-SOIC [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: SOIC; 28-SOIC (0.295\", 7.50mm Width)
  • Density: 256
  • Access Time: 140
1254235 [FM31L278-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM Memory. Real-time Clock (RTC). Low Voltage Reset. Watchdog Timer. Early Power-Fail Warning/NMI. Two 16-bit Event Counters. Serial Number with Write-lock for Security. [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 256
  • Pins: 14
Memory -- FM28V020-SGTR [FM28V020-SGTR from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 140 ns 28-SOIC [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: SOIC; 28-SOIC (0.295\", 7.50mm Width)
  • Density: 256
  • Access Time: 140
1254236 [FM33256B-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM Memory. Real-time Clock (RTC). Low Voltage Reset. Watchdog Timer. Early Power-Fail Warning/NMI. Two 16-bit Event Counters. Serial Number with Write-lock for Security. [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Package Type: SOIC
  • Density: 256
  • Pins: 14
Memory -- FM28V020-T28G [FM28V020-T28G from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 140 ns 28-TSOP I [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: SSOP; TSSOP; 28-TSSOP (0.465\", 11.80mm Width)
  • Density: 256
  • Access Time: 140
7165763 [FM31L278-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM Memory. Real-time Clock (RTC). Low Voltage Reset. Watchdog Timer. Early Power-Fail Warning/NMI. Two 16-bit Event Counters. Serial Number with Write-lock for Security. [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 256
  • Package Type: SOIC
Memory -- FM28V020-TG [FM28V020-TG from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 140 ns 32-sTSOP [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: 32-TFSOP (0.465\", 11.80mm Width)
  • Density: 256
  • Access Time: 140
7965327 [TC58BVG0S3HBAI4 from Toshiba Imaging Systems Division]
from RS Components, Ltd.

BENAND â „ ¢ is SLC (Single Level Cell) NAND Flash Memory with build in ECC (Error Correction Code). Memory Size = 1Gbit. Organisation = 2048 x 8 bit. Data Bus Width = 8bit. Maximum Random Access Time = 120 µs. Mounting Type = Surface Mount. Package Type = TFBGA. Pin Count =... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 1000000
  • Package Type: TFBGA
Memory -- FM28V100-TG [FM28V100-TG from Infineon Technologies AG]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 1Mbit Parallel 90 ns 32-TSOP I [See More]

  • Supply Voltage: 3.6V; 2V ~ 3.6V
  • Package Type: 32-TFSOP (0.465\", 11.80mm Width)
  • Density: 1000
  • Access Time: 90
7965336 [TC58BVG1S3HTAI0 from Toshiba Imaging Systems Division]
from RS Components, Ltd.

BENAND â „ ¢ is SLC (Single Level Cell) NAND Flash Memory with build in ECC (Error Correction Code). Memory Size = 2Gbit. Organisation = 2048 x 8 bit. Data Bus Width = 8bit. Maximum Random Access Time = 40 µs. Mounting Type = Surface Mount. Package Type = TSOP. Pin Count = 48. [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 2000000
  • Package Type: TSOP
Memory -- MB85R1001ANC-GE1 [MB85R1001ANC-GE1 from KAGA FEI AMERICA, INC.]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 1Mbit Parallel 150 ns 48-TSOP [See More]

  • Supply Voltage: 3.6V; 3V ~ 3.6V
  • Package Type: 48-TFSOP (0.488\", 12.40mm Width)
  • Density: 1000
  • Access Time: 150
8282780 [FM24V01-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 128
  • Package Type: SOIC
Memory -- MB85R256FPF-G-BND-ERE1 [MB85R256FPF-G-BND-ERE1 from KAGA FEI AMERICA, INC.]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 150 ns 28-SOP [See More]

  • Supply Voltage: 3.6V; 2.7V ~ 3.6V
  • Package Type: SOIC; 28-SOIC (0.295\", 7.50mm Width)
  • Density: 256
  • Access Time: 150
8282815 [FM25V01-G from Cypress Semiconductor Corp.]
from RS Components, Ltd.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast... [See More]

  • Supply Voltage: 3.6V; 3.6 V
  • Data Bus Width: 8
  • Density: 128
  • Package Type: SOIC
Memory -- MB85R256FPFCN-G-BNDE1 [MB85R256FPFCN-G-BNDE1 from KAGA FEI AMERICA, INC.]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 150 ns 28-TSOP I [See More]

  • Supply Voltage: 3.6V; 2.7V ~ 3.6V
  • Package Type: SSOP; TSSOP; 28-TSSOP (0.465\", 11.80mm Width)
  • Density: 256
  • Access Time: 150
Memory -- MB85R4M2TFN-G-ASE1 [MB85R4M2TFN-G-ASE1 from KAGA FEI AMERICA, INC.]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 4Mbit Parallel 150 ns 44-TSOP [See More]

  • Supply Voltage: 3.6V; 1.8V ~ 3.6V
  • Package Type: 44-TSOP (0.400\", 10.16mm Width)
  • Density: 4000
  • Access Time: 150
Memory -- MB85R8M2TPBS-M-JAE1 [MB85R8M2TPBS-M-JAE1 from KAGA FEI AMERICA, INC.]
from Quarktwin Technology Ltd.

FRAM (Ferroelectric RAM) Memory IC 8Mbit Parallel 150 ns 48-FBGA (8x6) [See More]

  • Supply Voltage: 3.6V; 1.8V ~ 3.6V
  • Package Type: BGA; 48-VFBGA
  • Density: 8000
  • Access Time: 150