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Supplier: ValueTronics International, Inc.
Description: , contemporary enclosure, the Model 150A100A provides readily available RF power for typical applications such as RF susceptibility testing, antenna and component testing, watt meter calibration, and use as a driver for higher power amplifiers.
- Frequency Range: 100 MHz
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Supplier: Richardson RFPD
Description: N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. The transistor is also suitable for wideband power amplifier applications
- Operating Frequency: 720 to 960 MHz
- Output Power: 100 watts
- Package Type: Other
- Power Gain: 19.5 dB
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Supplier: Wolfspeed
Description: The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for Doherty amplifier designs. It features input and output matching, and a
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Wolfspeed
Description: The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. It features input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Wolfspeed
Description: The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1880 to 2025 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: NuWaves Ltd.
Description: The NuPower™ LS100A01 L- & S-Band Power Amplifier is a small, ultra-high-power solid-state power amplifier module for CW operation that delivers a minimum of 100 watts of RF power from 1600 MHz to 2500 MHz to boost signal power levels of data links and
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Mobile / Wireless Systems
- Frequency Range: 1600 to 2500 MHz
- Maximum Gain: 20 dB
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Supplier: MACOM
Description: At MACOM we offer a complete line of RF and microwave limiters, LNA/limiters and limiting amplifiers up to 18 GHz. These products use the latest thin-film hybrid manufacturing techniques to obtain the highest levels of performance, repeatability, reliability and cost-effectiveness.
- Amplifier Type: Limiting Amplifier
- Applications: Terrestrial RF/Microwave Systems
- Frequency Range: 20 to 18000 MHz
- Output Power( P1dB): 36.02 to 60 dBm
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Supplier: APITech
Description: API Technologies' complete line of Gallium Nitride (GaN) based power amplifiers and power amplifier drivers offer unparalleled reliability and performance. Utilizing the intrinsic physical properties of GaN like high heat capacity and thermal conductivity, these durable power
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Supplier: APITech
Description: Wide bandwidth and high efficiency are not the only features offered in our full line of high power amplifiers. Utilizing both in-house chip and wire (hybrid), thin film, and SMT technology, our power amplifiers draw from a wide range of leading edge semiconductors. Amplifiers
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Supplier: AR Modular RF
Description: The Model KAW2040 is a Class AB wideband RF power amplifier delivering in excess of 100 Watts CW power into a 50-Ohm load over the frequency range of 100 MHz to 500 MHz. Power gain is a minimum of 50 dB. GPIB control requires the optional IEEE488.2/RS232 Interface
- Amplifier Type: Power Amplifier
- Applications: SATCOM Amplifier
- Frequency Range: 100 to 500 MHz
- Gain Flatness: 2.5 dB
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Supplier: AR Modular RF
Description: The Model KAW2020 is a Class AB wideband RF power amplifier delivering in excess of 100 Watts CW power into a 50-Ohm load over the frequency range of 200 MHz to 500 MHz. Power gain is a minimum of 50 dB. GPIB control requires the optional IEEE488.2/RS232 Interface
- Amplifier Type: Power Amplifier
- Applications: SATCOM Amplifier
- Frequency Range: 200 to 500 MHz
- Gain Flatness: 2 dB
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Supplier: AR Modular RF
Description: The Model KAA2020 is a Class AB wideband RF power amplifier delivering in excess of 100 Watts CW power into a 50-Ohm load over the frequency range of 500 kHz to 100 MHz. Power gain is a minimum of 50 dB. GPIB control requires the optional IEEE488.2/RS232 Interface
- Amplifier Type: Power Amplifier
- Frequency Range: 0.5000 to 100 MHz
- Gain Flatness: 2 dB
- Maximum Operating Voltage: 265 volts
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Supplier: DigiKey
Description: 3.1-3.6 GHZ, 100 W GAN PA
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 2900 to 3500 MHz
- Maximum Gain: 25 dB
- Maximum Operating Voltage: 30 volts
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Supplier: Crescend Technologies, LLC
Description: Crescends UHF series of amplifiers provide reliable service for the land mobile and public safety industries. They are available in outputs of 100 and 150 watts with inputs ranging from 100mW to 50W. Our H100 models are designed to be fully modular and space
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 403 to 512 MHz
- Minimum Operating Voltage: 13.8 volts
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Supplier: Crescend Technologies, LLC
Description: Having the same features as our C5 models, the design of these amplifiers allows for 5 units in the space of one. Designed to be fully modular and space efficient, the 5-pack series also provides continuous duty operation. Rack FPR-5 sold separately.
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 136 to 174 MHz
- Minimum Operating Voltage: 13.8 volts
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Supplier: Crescend Technologies, LLC
Description: Having the same features as our C5 models, the design of these amplifiers allows for 5 units in the space of one. Designed to be fully modular and space efficient, the 5-pack series also provides continuous duty operation. Rack FPR-5 sold separately.
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 30 to 50 MHz
- Minimum Operating Voltage: 13.8 volts
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Supplier: Crescend Technologies, LLC
Description: Crescends low band line of amplifiers is designed for public safety and commercial two-way radio bands. They are available in outputs of 100W and 250W and inputs ranging from 2-20W. All of our amplifiers are designed for simple installation, maintenance and ease of service.
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 30 to 50 MHz
- Minimum Operating Voltage: 13.8 volts
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Supplier: Empower RF Systems
Description: Solid-state linear design, built-in control, monitoring & protection
- Amplifier Type: Power Amplifier
- Frequency Range: 3400 to 3600 MHz
- Gain Flatness: 1 dB
- Maximum Gain: 50 dB
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Supplier: Empower RF Systems
Description: Solid-state linear design, built-in control, monitoring & protection
- Amplifier Type: Power Amplifier
- Frequency Range: 500 to 1000 MHz
- Gain Flatness: 1.5 dB
- Maximum Gain: 50 dB
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Supplier: Empower RF Systems
Description: Solid-state linear amplifier, modulation type: CW/FM/AM, size: 4.5x3.0x1.25
- Amplifier Type: Power Amplifier
- Frequency Range: 225 to 400 MHz
- Maximum Gain: 10 dB
- Maximum Operating Voltage: 28 volts
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Supplier: Empower RF Systems
Description: Solid-state linear design, suitable for CW/FM/PM/AM/digital modulation
- Amplifier Type: Power Amplifier
- Frequency Range: 1.5 to 400 MHz
- Gain Flatness: 2 dB
- Maximum Gain: 50 dB
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Supplier: AR RF/Microwave Instrumentation
Description: The Model 100S1G6AB is a solid-state, Class AB design, self-contained, air-cooled, broadband amplifier designed for applications where instantaneous bandwidth, high gain, and linearity are required. Housed in a stylish contemporary cabinet, the unit is designed for benchtop use but can
- Applications: Mobile / Wireless Systems
- Frequency Range: 1000 to 6000 MHz
- Output Power( P1dB): 50 dBm
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Supplier: AR RF/Microwave Instrumentation
Description: The Model 100U1000A is a solid-state, Class A design, self-contained, air-cooled, broadband power amplifier designed for applications where instantaneous bandwidth, high gain and linearity are required. It will provide a minimum of 100 W across its operating bandwidth.
- Applications: Mobile / Wireless Systems
- Output Power( P1dB): 50 dBm
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Supplier: AR RF/Microwave Instrumentation
Description: The Model 100T40G50 is a self-contained, forced air-cooled, broadband traveling wave tube (TWT) microwave amplifier designed for applications where instantaneous bandwidth and high gain are required. A reliable TWT subsystem provides a conservative 100 W minimum, measured at the
- Frequency Range: 40000 to 50000 MHz
- Output Power( P1dB): 50 dBm
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Supplier: AR RF/Microwave Instrumentation
Description: controls the RF input level to the RF amplifier first stage when the RF input level is increased above 0dBm. The RF amplifier stages are protected from over-temperature by removing the DC voltage to them if an over-temperature condition occurs due to cooling
- Frequency Range: 0.1000 to 1000 MHz
- Output Power( P1dB): 50 dBm
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Qorvo's QPA1722 is a high power, packaged K-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1722 targets the 17.7 – 20.2 GHz Satcom band while providing 5 Watts of linear power with third-order intermodulation distortion products (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1724D is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1724D targets the 17.3 – 21.2 GHz Satcom band providing 5 Watts of linear power with third-order intermodulation distortion products of 22 d (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
is ideal for supporting communications and radar applications in both commercial and military markets. The QPA1111 is 100% DC and RF tested to ensure compliance to electrical specifications. Lead-free and RoHS compliant. (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
. The QPA1314 is 100% DC and RF tested to ensure compliance to electrical specifications. Lead-free and RoHS compliant (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA0016 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA0016 targets the 13.75-14.5 GHz Satcom band while providing 5-Watts of linear power with third-order intermodulation distortion products of 25 d (read more)
Browse Power Operational Amplifiers Datasheets for Qorvo -
Download this article of Make Smart Use Of Preamps In RF Testing Learn more about Shielding (read more)
Browse RF Amplifiers Datasheets for A.H. Systems Inc. -
Make Smart Use Of Preamps In RF Testing There are a number of ways that mistakes with preamps in test configurations can lead to misleading or incorrect readings or even damaged equipment and (read more)
Browse RF Amplifiers Datasheets for A.H. Systems Inc. -
Principle Low Dropout Regulators (LDOs) mainly ensure that the output voltage is steady. This output voltage is higher than the input power. It usually uses a P-channel MOSFET or a PNP bipolar junction transistor (BJT) to drive it carefully. This keeps it just under the set (read more)
Browse General Purpose Diodes Datasheets for ODG (Origin Data Global) -
24.0 GHz (C- thru K-Bands) with 18.0 dB Isolation and ±0.4 dB of maximum Amplitude Tracking, with maximum Phase Tracking is ±6 degrees. The 2-way divider exhibits Insertion Loss of 1.25 dB across the full frequency range. Maximum VSWR is 1.6. Input power rating is 10 watts with 2 (read more)
Browse RF Power Dividers and RF Power Combiners Datasheets for KRYTAR, Inc.
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http://www.microsemi.com/document-portal/doc_download/14720-a-high-efficiency-400-watt-13-56-mhz-rf-power-amplifier
This paper details the design, development, assembly and performance of a low cost, high- efficiency, 400 Watt , 13.56MHz RF power amplifier (PA) operated from a 100 VDC supply and with an efficiency of 75%. The PA is built around a “Symmetric Pair” of low cost RF power MOSFETs from Advanced Power …
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RF / 10
150A100B - 150 Watt CW, 10 kHz - 100 MHz RF Power Amplifier Utilization of push-pull MOSFET circuitry lowers distortion, improves stability and allows operation into any load impedance …
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Challenges in 100W CW UHF SSPA for communication payloads
RF MOSFETs have been used in balanced amplifier configuration to achieve the required output. To the best of our knowledge the reported Junction temperature of 114.66°C at 100 watt CW output power for satellite communication payload is state of the art achievement.
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Design and development of 1 KW solid state RF amplifier
Since low power tube based RF amplifiers are complicated, occupy a large space and are bulky, the efforts are on to develop indigenously 1 KW solid state technology based RF Power amplifier . A power level of 1KW is chosen for the initial design because RF power Mosfets upto 250 watt are easily available and by clubbing 3-4 stages the power level of 1 KW can be made. Presently design and testing of 100 -watt stage is in progress.
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Analog Circuit Design
A 14-MHz 100 - watt Class E resonant [dc/dc] converter: principles, design considerations and measured performance," Power Electronics Conf., San Jose, CA, Oct. 1986. IRF540 RF power stage supplied estimated 105 W at 91.4% efficiency because of estimated 5 W … N. O. Sokal and Ka-Lon Chu, "Class-E power amplifier delivers 24 W at 27 MHz, at 89-92% efficiency, using one transistor … … but not in Proc. [International Rectifier (89%) and Harris Semiconductor (92%) IRF510 SMPS MOSFET ; Harris device slightly larger …
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RF / Sweep Generators / RF Amplifiers
100A400 - 100 Watt CW, 100 kHz - 400 MHz Amplifier Utilization of push-pull MOSFET circuitry lowers distortion, improves stability and allows operation into any load impedance … The Model 100A400, when used with an RF sweep generator, will provide a minimum of 100 watts …
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RF / Loads / Impedance
100A400 - 100 Watt CW, 100 kHz - 400 MHz Amplifier Utilization of push-pull MOSFET circuitry lowers distortion, improves stability and allows operation into any load impedance … The Model 100A400, when used with an RF sweep generator, will provide a minimum of 100 watts …
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RF / Impedance / Continuous Wave
100A400 - 100 Watt CW, 100 kHz - 400 MHz Amplifier Utilization of push-pull MOSFET circuitry lowers distortion, improves stability and allows operation into any load impedance … The Model 100A400, when used with an RF sweep generator, will provide a minimum of 100 watts …
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http://www.microsemi.com/document-portal/doc_download/14718-low-cost-1000-watt-300-volt-rf-power-amplifier-for-27-12mhz
The addition of a PFC preregulator to the power amplifier system could add 50 to 100 % to the cost of the power supply portion. The new high voltage RF MOSFETs fromAdvanced Power Technology (APT) make possible an RF amplifier design which can be operated at 300V, which then permits the amplifier to be connected Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz .
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RF power silicon-on-glass VDMOSFETs
The first fabricated SOG VDMOSFETs feature an of 6/10 GHz, breakdown voltage of 100 V, excellent linearity … The special elements of this device design have been proven to be instrumental in enhancing RF perfor- mance of power MOSFETs . … and W. Burger, “High performance silicon LDMOS technology for 2 GHz RF power amplifier applications,” in … [2] A. Wood, W. Brakensick, C. Dragon, and W. Burger, “120 Watt , 2 GHz, Si LDMOS RF …