-
Supplier: ValueTronics International, Inc.
Description: The 150A100A is a 100 MHz, 150 W RF amplifier from Amplifier Research. Amplify RF and Microwave signals to measure, test, and design circuits. Applications include radio communications, cellphones, EMI testing, and much more. Additional Features: Rated Power
- Frequency Range: 100 MHz
-
Supplier: Richardson RFPD
Description: N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. The transistor is also suitable for wideband power amplifier applications
- Power Gain: 19.5 dB
- Output Power: 100 watts
- Operating Frequency: 720 to 960 MHz
- Features: Other
-
Supplier: Wolfspeed
Description: The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for Doherty amplifier designs. It features input and output matching, and a
- Power Gain: 17 dB
- Output Power: 100 watts
- Operating Frequency: 1,800 to 2,200 MHz
- Features: MOSFET, Other
-
-
Supplier: Wolfspeed
Description: The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. It features input and output matching, and a thermally-enhanced package with earless flange. Manufactured with
- Power Gain: 16 dB
- Output Power: 100 watts
- Operating Frequency: 2,010 to 2,025 MHz
- Features: MOSFET, Other
-
Supplier: Wolfspeed
Description: The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1880 to 2025 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless
- Power Gain: 17 dB
- Output Power: 250 watts
- Operating Frequency: 1,805 to 2,170 MHz
- Features: MOSFET, Other
Find Suppliers by Category Top
Featured Products Top
-
Qorvo's QPA1724D is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1724D targets the 17.3 – 21.2 GHz Satcom band providing 5 Watts of linear power with third-order intermodulation distortion products of 22 d (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1722 is a high power, packaged K-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1722 targets the 17.7 – 20.2 GHz Satcom band while providing 5 Watts of linear power with third-order intermodulation distortion products (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
is ideal for supporting communications and radar applications in both commercial and military markets. The QPA1111 is 100% DC and RF tested to ensure compliance to electrical specifications. Lead-free and RoHS compliant. (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
. The QPA1314 is 100% DC and RF tested to ensure compliance to electrical specifications. Lead-free and RoHS compliant (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Download this article of Make Smart Use Of Preamps In RF Testing Learn more about Shielding (read more)
Browse RF Amplifiers Datasheets for A.H. Systems Inc. -
Make Smart Use Of Preamps In RF Testing There are a number of ways that mistakes with preamps in test configurations can lead to misleading or incorrect readings or even damaged equipment and (read more)
Browse RF Amplifiers Datasheets for A.H. Systems Inc. -
24.0 GHz (C- thru K-Bands) with 18.0 dB Isolation and ±0.4 dB of maximum Amplitude Tracking, with maximum Phase Tracking is ±6 degrees. The 2-way divider exhibits Insertion Loss of 1.25 dB across the full frequency range. Maximum VSWR is 1.6. Input power rating is 10 watts with 2 (read more)
Browse RF Power Dividers and RF Power Combiners Datasheets for KRYTAR, Inc.
More Information Top
Indicates content that may require registration and/or purchase.
-
http://www.microsemi.com/document-portal/doc_download/14720-a-high-efficiency-400-watt-13-56-mhz-rf-power-amplifier
This paper details the design, development, assembly and performance of a low cost, high- efficiency, 400 Watt , 13.56MHz RF power amplifier (PA) operated from a 100 VDC supply and with an efficiency of 75%. The PA is built around a “Symmetric Pair” of low cost RF power MOSFETs from Advanced Power …
-
RF / 10
150A100B - 150 Watt CW, 10 kHz - 100 MHz RF Power Amplifier Utilization of push-pull MOSFET circuitry lowers distortion, improves stability and allows operation into any load impedance …
-
Challenges in 100W CW UHF SSPA for communication payloads
RF MOSFETs have been used in balanced amplifier configuration to achieve the required output. To the best of our knowledge the reported Junction temperature of 114.66°C at 100 watt CW output power for satellite communication payload is state of the art achievement.
-
Design and development of 1 KW solid state RF amplifier
Since low power tube based RF amplifiers are complicated, occupy a large space and are bulky, the efforts are on to develop indigenously 1 KW solid state technology based RF Power amplifier . A power level of 1KW is chosen for the initial design because RF power Mosfets upto 250 watt are easily available and by clubbing 3-4 stages the power level of 1 KW can be made. Presently design and testing of 100 -watt stage is in progress.
-
Analog Circuit Design
A 14-MHz 100 - watt Class E resonant [dc/dc] converter: principles, design considerations and measured performance," Power Electronics Conf., San Jose, CA, Oct. 1986. IRF540 RF power stage supplied estimated 105 W at 91.4% efficiency because of estimated 5 W … N. O. Sokal and Ka-Lon Chu, "Class-E power amplifier delivers 24 W at 27 MHz, at 89-92% efficiency, using one transistor … … but not in Proc. [International Rectifier (89%) and Harris Semiconductor (92%) IRF510 SMPS MOSFET ; Harris device slightly larger …
-
RF / Sweep Generators / RF Amplifiers
100A400 - 100 Watt CW, 100 kHz - 400 MHz Amplifier Utilization of push-pull MOSFET circuitry lowers distortion, improves stability and allows operation into any load impedance … The Model 100A400, when used with an RF sweep generator, will provide a minimum of 100 watts …
-
RF / Loads / Impedance
100A400 - 100 Watt CW, 100 kHz - 400 MHz Amplifier Utilization of push-pull MOSFET circuitry lowers distortion, improves stability and allows operation into any load impedance … The Model 100A400, when used with an RF sweep generator, will provide a minimum of 100 watts …
-
RF / Impedance / Continuous Wave
100A400 - 100 Watt CW, 100 kHz - 400 MHz Amplifier Utilization of push-pull MOSFET circuitry lowers distortion, improves stability and allows operation into any load impedance … The Model 100A400, when used with an RF sweep generator, will provide a minimum of 100 watts …
-
http://www.microsemi.com/document-portal/doc_download/14718-low-cost-1000-watt-300-volt-rf-power-amplifier-for-27-12mhz
The addition of a PFC preregulator to the power amplifier system could add 50 to 100 % to the cost of the power supply portion. The new high voltage RF MOSFETs fromAdvanced Power Technology (APT) make possible an RF amplifier design which can be operated at 300V, which then permits the amplifier to be connected Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz .
-
RF power silicon-on-glass VDMOSFETs
The first fabricated SOG VDMOSFETs feature an of 6/10 GHz, breakdown voltage of 100 V, excellent linearity … The special elements of this device design have been proven to be instrumental in enhancing RF perfor- mance of power MOSFETs . … and W. Burger, “High performance silicon LDMOS technology for 2 GHz RF power amplifier applications,” in … [2] A. Wood, W. Brakensick, C. Dragon, and W. Burger, “120 Watt , 2 GHz, Si LDMOS RF …