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Supplier: Qorvo
Description: Qorvo's TGA2704 is a high power amplifier MMIC for 9 to 10.5 GHz applications. The part is designed using Qorvo's 0.25um 3MI pHEMT production process. The TGA2704 nominally provides 38 dBm output power and 40% PAE for bias of 9 V, 1.05 A. The typical gain is 20 dB.
- Frequency Range: 9,000 to 10,500 MHz
- Minimum Gain: 20 dB
- Maximum Gain: 20 dB
- Minimum Operating Voltage: 7 volts
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Supplier: Qorvo
Description: Qorvo's TGA2535-SM is an X band packaged power amplifier. The TGA2535-SM operates from 10 to 12 GHz and is designed using Qorvo's power pHEMT production process. The TGA2535-SM typically provides 43 dBm of TOI at 20 dBm Pout/Tone, 33 dBm of output power at
- Frequency Range: 10,000 to 12,000 MHz
- Minimum Gain: 25 dB
- Maximum Gain: 25 dB
- Minimum Operating Voltage: 6 volts
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Supplier: Qorvo
Description: Qorvo’s QPA1009 is a laminate packaged wide band power amplifier MMIC fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 10.7 – 12.7 GHz, the QPA1009 provides greater than 16 Watts (42 dBm) of saturated output power and 16 dB of
- Open-Loop Gain (AVOL): 16 dB
- Supply Voltage (VS): 20 volts
- Operating Range: Military
- Features: Other, Power Operational Amplifiers
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Supplier: Qorvo
Description: Qorvo’s TGA4548 is a high frequency, high power MMIC amplifier fabricated on Qorvo’s production 0.15um GaN on SiC process (QGaN15). The TGA4548 operates from 17 – 20 GHz and typically provides 10 W saturated output power with power-added efficiency of 25%
- Frequency Range: 17,000 to 20,000 MHz
- Minimum Gain: 27 dB
- Maximum Gain: 27 dB
- Minimum Operating Voltage: 28 volts
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Supplier: Skyworks Solutions, Inc.
Description: The SE2433T is a high-performance power amplifier, suitable for Zigbee technology applications, Bluetooth® signals (including low energy), and Bluetooth 1.0 signal applications. The SE2433T is designed for ease of use and maximum flexibility, with an integrated input match and a
- Frequency Range: 2,400 to 2,500 MHz
- Minimum Gain: 22 dB
- Maximum Gain: 22 dB
- Minimum Operating Voltage: 2 volts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 6GHZ, 10GHZ. Search-friendly keywords include Rf Amplifier, RF Amplifiers, electronic component, datasheet, replacement part, 6GHZ, 10GHZ. This listing supports clearer product discovery
- Features: Other
- Standards: RoHS Compliant
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 5GHZ, 10GHZ. Search-friendly keywords include Rf Amplifier, RF Amplifiers, electronic component, datasheet, replacement part, 5GHZ, 10GHZ. This listing supports clearer product discovery
- Features: Other
- Standards: RoHS Compliant
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10 GHz, 18 GHz. Search-friendly keywords include Rf Amplifier, RF Amplifiers, electronic component, datasheet, replacement part, 10 GHz, 18
- Supply Voltage (VS): 1.5 volts
- Pin Count: 8
- Features: Other
- Standards: RoHS Compliant
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Supplier: kTB Solutions
Description: kTB Solutions supplies Power Amplifiers from DC to 110GHz, and the power is up to 200W. Features: Broad Band High Power Applications: Wireless Transmitter Laboratory Test Power Amplifiers Brochure
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 10GHZ, 45GHZ. Search-friendly keywords include Rf Amplifier, RF Amplifiers, electronic component, datasheet, replacement part, 10GHZ, 45GHZ. This listing supports clearer product
- Supply Voltage (VS): 4 volts
- Features: Other
- Standards: RoHS Compliant
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Supplier: Richardson RFPD
Description: The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 300 MHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no
- Frequency Range: 300 to 6,000 MHz
- Maximum Gain: 28 dB
- Minimum Operating Voltage: 50 volts
- Maximum Operating Voltage: 50 volts
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Supplier: Picosecond Pulse Labs, Inc.
Description: Features Linear Amplifier 26dB Gain 2.5kHz to 10GHz Bandwidth >4Vp-p Linear Output Low Power Dissipation Temperature Compensated Applications Linear Amplification General Puropse Lab Use Test and Measurement The Picosecond Advantage: PSPL's broadband design expertise enables superior
- Frequency Range: 10,000 MHz
- Minimum Gain: 26 dB
- Maximum Gain: 26 dB
- Nominal Impedance: 50 Ohms
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Supplier: Fairview Microwave Inc.
Description: at 10 Watt. Our SMA high power RF amplifier design has a 40 dB typical gain. Fairview RF high power high gain amplifier part number FMAM5070 is rated with a Psat of 40 dBm. Our radio frequency high power amplifier is constructed for a minimum
- Frequency Range: 6,000 to 18,000 MHz
- Maximum Gain: 40 dB
- Maximum Operating Voltage: 30 volts
- Amplifier Type: Power Amplifier
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Supplier: Fairview Microwave Inc.
Description: at 20 Watt. Our SMA high power RF amplifier design has a 43 dB typical gain. Fairview RF high power high gain amplifier part number FMAM5069 is rated with a Psat of 43 dBm. Our radio frequency high power amplifier is constructed for a minimum frequency of 6
- Frequency Range: 6,000 to 10,000 MHz
- Maximum Gain: 43 dB
- Maximum Operating Voltage: 25 volts
- Amplifier Type: Power Amplifier
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Supplier: Broadcom Inc.
Description: The ALM-32120 is a high linearity 2 Watt PA with good Output IP3 performance and exceptionally good Power Added Efficiency, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process. This 2 Watt power amplifier is housed inside a
- Frequency Range: 700 to 1,000 MHz
- Minimum Gain: 12.5 dB
- Maximum Gain: 15.5 dB
- Output Power( P1dB): 34.400000000000006 dBm
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65174-21 is being discontinued and is not recommended for new designs. The SKY65174-21 is a highly integrated Power Amplifier Module (PAM) intended for high performance Wireless Local Area Network (WLAN) requiring up to +27 dBm linear output power. The
- Frequency Range: 2,400 to 2,500 MHz
- Minimum Gain: 35 dB
- Maximum Gain: 35 dB
- Noise Figure: 7 dB
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Supplier: Northrop Grumman Corporation
Description: P1dB (dBm) Psat (dBm) Form Availability APN252 GaN Driver Amplifier 10-14 25.5 34 38 Die Limited Samples NEW APN250 GaN Power Amplifier 10-14 13 39 42 Die Limited Samples NEW APN226 GaN HEMT High Power Amplifier 13.5-15.5 20 36 39.5 Die Stock APN232
- Frequency Range: 10,000 to 46,000 MHz
- Minimum Gain: 13 dB
- Maximum Gain: 25.5 dB
- Output Power( P1dB): 34 to 40.499999999999986 dBm
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Supplier: Custom MMIC
Description: The CMD249 is wideband GaAs MMIC distributed power amplifier die which operates from DC to 20 GHz. The amplifier delivers greater than 12 dB of gain with a corresponding output 1 dB compression point of +29 dBm and output IP3 of 38 dBm at 10 GHz. The CMD249
- Frequency Range: 20,000 MHz
- Minimum Gain: 12 dB
- Maximum Gain: 12 dB
- Output Power( P1dB): 30 dBm
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Supplier: Fairview Microwave Inc.
Description: and rated at 10 Watt. Our SMA high power RF amplifier design has a 43 dB minimum gain and 45 dB typical gain. Fairview RF high power high gain amplifier part number SPA-035-43-10-SMA is rated for a gain flatness of 1.5 dB with a Psat of 40 dBm. Our radio
- Frequency Range: 3,100 to 3,500 MHz
- Minimum Gain: 43 dB
- Maximum Gain: 45 dB
- Gain Flatness: 1.5 dB
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Supplier: QuinStar Technology, Inc.
Description: QuinStar Technology’s series QPJ power amplifiers offer state of the art power performance in the 0.5-18 GHz frequency range. A wide range of gain values is offered for significantly high power output levels. These amplifiers offer gain in the 10-50
- Frequency Range: 500 to 18,000 MHz
- Minimum Gain: 10 dB
- Maximum Gain: 50 dB
- Output Power( P1dB): 23 to 40 dBm
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Supplier: Wolfspeed
Description: The CMPA601C025F GaN HEMT MMIC amplifier offers 25 watts of power from 6 to 12 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally enhanced, 10-lead ceramic package. This delivers a high-power 6- to 12-GHz, high-efficiency
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Supplier: Fairview Microwave Inc.
Description: and rated at 10 Watt. Our SMA high power RF amplifier design has a 40 dB minimum gain. Fairview RF high power high gain amplifier part number SPA-014-40-10-SMA is rated with a P1dB of 40 dBm. Our radio frequency high power amplifier is
- Frequency Range: 1,200 to 1,400 MHz
- Minimum Gain: 40 dB
- Output Power( P1dB): 40 dBm
- Maximum Operating Voltage: 13 volts
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Supplier: Marki Microwave LLC
Description: The AMM-10860PSM is a wideband pHEMT-based GaAs surface-mount gain block driver amplifier operating from 10 to 30 GHz. This amplifier offers high gain at 24.5 dB, +21.5 dBm saturated output power, and strong linearity with output IP3 of +28.5 dBm. It's an excellent
- Frequency Range: 10,000 to 30,000 MHz
- Features: Other
- Package Type: Surface Mount Technology (SMT)
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Supplier: Custom MMIC
Description: The CMD249is a wideband GaAs MMIC power amplifier die which operates from DC to 20 GHz. The amplifier delivers greater than 12 dB of gain with a corresponding output 1 dB compression point of +29 dBm and output IP3 of 38 dBm at 10 GHz. The CMD249 is a 50 ohm
- Frequency Range: 20,000 MHz
- Minimum Gain: 13 dB
- Maximum Gain: 13 dB
- Output Power( P1dB): 30 dBm
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Supplier: Wolfspeed
Description: higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance.
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Supplier: Broadcom Inc.
Description: MGA-31489 is a 0.10W high gain Driver Amplifier MMIC that serves applications from 1.5 GHz to 3.0 GHz, housed in a SOT-89 standard plastic package. It is one of the Avago gain blocks family that feature high linearity, high gain, excellent gain flatness and low power
- Frequency Range: 1,500 to 3,000 MHz
- Minimum Gain: 18.2 dB
- Maximum Gain: 21.2 dB
- Output Power( P1dB): 20.099999999999984 to 22.2 dBm
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Supplier: NuWaves Ltd.
Description: The NuPower™ 12B01A L- & S-Band Power Amplifier is a broadband, high-performance solid-state power amplifier module designed to have a very low SWaP profile. This unidirectional SSPA provides up to 50% module efficiency, delivering at least 10 watts of RF
- Frequency Range: 1,000 to 2,500 MHz
- Minimum Gain: 42 dB
- Maximum Gain: 42 dB
- Output Power( P1dB): 42.55272505103306 dBm
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Supplier: Picosecond Pulse Labs, Inc.
Description: Features Broadband linear gain amplifier with 15 dB gain 15 GHz bandwidth with ±0.3dB gain flatness Lower 3 dB frequency of 10 kHz Low deviation from linear phase (±3 degrees) 1 dB gain compression point of 13 dBm RF power detection Applications 12.5 Gb/s fiber optic
- Frequency Range: 15,000 MHz
- Minimum Gain: 15 dB
- Maximum Gain: 15 dB
- Nominal Impedance: 50 Ohms
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Supplier: Richardson RFPD
Description: 10MHz-50GHz High Gain Power Amplifier. The UA0U50HM Amplifier is a broadband, high power, moderate gain instrumentation grade amplifier. The amplifier was designed to provide exceptional gain flatness per octave over greater than 5 octaves of frequency
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Supplier: Wolfspeed
Description: The CMPA901A035F1 is a fully matched MMIC housed in a thermally enhanced air cavity package. Operating at 28V, the device is capable of 40W of CW output power. The device can also be operated under pulse conditions. Typical Output Power 40 W Typical Power Gain 23 dB Typical PAE
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Supplier: Richardson RFPD
Description: 0.47- 0.96 GHz UHF 10 W LOW NOISE POWER AMPLIFIER WPA0510A. WPA0510A is a low noise figure, wideband, and high linearity class A operation power amplifier. The amplifier offers typical 40.0 dBm output P1dB, 0.90 dB noise figure, 50 dB gain, and 52.0
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Supplier: Microchip Technology, Inc.
Description: internally matched to 50 Ω. MMA053AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT distributed power amplifier die that operates between DC and 8 GHz. The amplifier provides 17 dB of gain, +43 dBm output IP3, and +31 dBm of output
- Features: Other
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Supplier: Marki Microwave LLC
Description: The AMM2-0020UH is a broadband amplifier enabling operation over a 10 MHz to 20 GHz frequency range. The amplifier features a 29 dB flat gain response, +23 dBm saturated output power, excellent return losses, and a low 2.5 dB noise figure. This amplifier is
- Frequency Range: 10 to 20,000 MHz
- Package Type: Connectorized
- Features: Other
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Supplier: Skyworks Solutions, Inc.
Description: The SKY67014-396LF operates in the frequency range of 1.5 to 3.0 GHz and the associated evaluation board is optimized for operation in the 2.4 GHz ISM band. The amplifier is manufactured in a compact, 2 x 2 mm, 8-pin Dual Flat No-Lead (DFN) package.
- Frequency Range: 1,500 to 3,000 MHz
- Minimum Gain: 12 dB
- Maximum Gain: 13 dB
- Noise Figure: 0.85 to 1 dB
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Supplier: Marki Microwave LLC
Description: sufficient power to drive the LO port of an S-diode mixer from 10 MHz to 15 GHz or of an H or L diode mixer from 10 MHz to 20 GHz. This amplifier can be operated with a variety of bias conditions for both low power and high-power applications.
- Frequency Range: 10 to 20,000 MHz
- Features: Other
Find Suppliers by Category Top
Featured Products Top
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Qorvo's QPA1722 is a high power, packaged K-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1722 targets the 17.7 – 20.2 GHz Satcom band while providing 5 Watts of linear power with third-order intermodulation distortion products (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1111 is a high power, packaged X-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1111 operates from 8.5 – 10.5 GHz, typically provides 30 W saturated output power with power-added efficiency of 45% and small signal (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
The ADM-8344PC is a wideband distributed low noise amplifier capable of providing 18 dB gain and +27 OIP3 from DC to 18 GHz. Featuring a low 1.4 dB noise figure from 4 to 7 GHz and excellent return losses, it is an ideal linear signal amplifier for applications requiring low power consumption and small form-factors. It can be driven from a single +5V supply for ease of use. Available in a connectorized module. (read more)
Browse RF Amplifiers Datasheets for Marki Microwave LLC -
Qorvo's QPA2597 is a packaged driver amplifier using proven GaN on SiC technology. The QPA2597 operates from 2.0 to 6.0GHz and provides 32 dBm of output with 24 dB of small signal gain and 37 % power-added efficiency. Using GaN MMIC technology and plastic packaging, the QPA2597 provides (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA0023D is a high-performance driver amplifier fabricated on Qorvo's production 0.15 um pHEMT process (QPHT15). Covering 6 – 18 GHz, the QPA0023D provides 13.5 dB small signal gain and 30 dBm P1dB with a saturated power of 32 dBm. In addition, the device has low IMD3 level of (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
QPF5012 is a multi-die front-end module (FEM) designed for 8.5-10.5GHz X-Band applications. The FEM integrates T/R switch, limiter, low-noise amplifier, and power amplifier. Transmit power is 10 W saturated with 40 % PAE and transmitter large signal gain is 20.5 d (read more)
Browse RF Transceivers Datasheets for Qorvo -
The UIYWI4876A from UIY is a type of WR112 waveguide isolator operating over 7GHz to 10GHz. It is in bandwidth 20% and performs at insertion loss less than 0.25dB, isolation higher than 25dB, VSWR1.2:1 max. It is capable of forward power in 100W and reverse in 30W, with operating temperature -40 (read more)
Browse RF Isolators and RF Circulators Datasheets for UIY Inc. -
The ADM-8536PSM is the world's smallest 2-20 GHz high linearity, low noise amplifier solution, featuring 10.5 dB gain, +25 dBm OIP3 and 2.5 dB noise figure that makes it suitable for use in RF front ends. The amplifier is designed for ease of use due to its internal bias network, DC blocking and RF matching, while its compact 1.3 x 2 mm DFN package and low power consumption make it an ideal choice for low SWaP applications. (read more)
Browse RF Amplifiers Datasheets for Marki Microwave LLC -
directivity, flatness, and coupling accuracy. Typical applications include power sampling and measurement, amplifier leveling, VSWR monitoring, field control, and amplifier and load protection. The new directional coupler lends itself to wireless designs and many test and measurement applications for (read more)
Browse RF Couplers Datasheets for KRYTAR, Inc. -
HSA-X-2-40 has: 670 pV (pico volt - 10^-12) noise levels 40dB VA gain at the 2GHz high frequency end. The (read more)
Browse Instrumentation Amplifiers Datasheets for Electro Optical Components, Inc.
More Information Top
Indicates content that may require registration and/or purchase.
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Gallium Nitride Electronics
The performance of AlGaN/GaN HEMTs for 2.8 GHz and 10 GHz power amplifier applications is evaluated in [2.528] for military applications.
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Microwave Field-Effect Transistors: Theory, design and applications
This example describes the design of a 9 to 10 GHz power amplifier .
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Comparative analysis of RF wide bandgap technologies for UMTS applications
A. Zhang, L. Rowland, E. Kaminsky, J. Kretchmer, V. Tilak, A. Allen, and B. Edward, “Performance of AlGaN/GaN HEMTs for 2.8 GHz and 10 GHz power amplifier applications,” in IEEE MTT-S Int.
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A broadband power amplifier design based on the extended resonance power combining technique
Abstract — A 4-to- 10 GHz power amplifier based on a modified extended resonance power combining technique is presented.
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A 5-10 GHz, 1-Watt HBT amplifier with 58% peak power-added efficiency
There is no published data available on I-W, 5- 10 GHz Power amplifier with > 50% power-added efficiency using MESFET or PHEMT device technologies.
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A Ku band internally matched high power GaN HEMT amplifier with over 30% of PAE
Performance of AlGaN/GaN HEMTs for 2.8 GHz and 10 GHz power amplifier applications.
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5W Highly Linear GaN power amplifier with 3.4 GHz bandwidth
A. Zhang, L. Rowland, E. Kaminsky, J. Kretchmer, V. Tilak, A. Allen, and B. Edward, “Performance of AlGaN/GaN HEMTs for 2.8 GHz and 10 GHz power amplifier applications,” in IEEE MTT-S Int.
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A digitally controlled DC/DC converter for an RF power amplifier
[4] N. Wang, V. Yousefzadeh, D. Maksimovic, S. Pajic, and Z. Popovic, “60% efficient 10 GHz power amplifier with dynamic drain bias con- trol,” IEEE Trans. Microw.
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Recent developments in compound semiconductor microwave power transistor technology
An 8 W, 10GHz power amplifier for Escan radar applications is shown in Fig. 3, which was fabricated using the process described later in this paper.
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Amplifier Circuits - Power, page 1
1W 10GHz Power Amplifier - We briefly describe here the 2-stages PA built to increase the power of the homebuilt transverter without impacting its originally compact design. . . .