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Supplier: Qorvo
Description: Qorvo's TGA2704 is a high power amplifier MMIC for 9 to 10.5 GHz applications. The part is designed using Qorvo's 0.25um 3MI pHEMT production process. The TGA2704 nominally provides 38 dBm output power and 40% PAE for bias of 9 V, 1.05 A. The typical gain is 20 dB.
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Radar Systems
- Frequency Range: 9000 to 10500 MHz
- Maximum Gain: 20 dB
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Supplier: Qorvo
Description: Qorvo's TGA2535-SM is an X band packaged power amplifier. The TGA2535-SM operates from 10 to 12 GHz and is designed using Qorvo's power pHEMT production process. The TGA2535-SM typically provides 43 dBm of TOI at 20 dBm Pout/Tone, 33 dBm of output power at
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Radar Systems
- Frequency Range: 10000 to 12000 MHz
- Maximum Gain: 25 dB
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Supplier: Fairview Microwave Inc.
Description: and rated at 10 Watt. Our SMA high power RF amplifier design has a 40 dB typical gain. Fairview RF high power high gain amplifier part number FMAM5070 is rated with a Psat of 40 dBm. Our radio frequency high power amplifier is constructed for a
- Amplifier Type: Power Amplifier
- Frequency Range: 6000 to 18000 MHz
- Maximum Gain: 40 dB
- Maximum Operating Voltage: 30 volts
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Supplier: Fairview Microwave Inc.
Description: and rated at 20 Watt. Our SMA high power RF amplifier design has a 43 dB typical gain. Fairview RF high power high gain amplifier part number FMAM5069 is rated with a Psat of 43 dBm. Our radio frequency high power amplifier is constructed for a minimum
- Amplifier Type: Power Amplifier
- Frequency Range: 6000 to 10000 MHz
- Maximum Gain: 43 dB
- Maximum Operating Voltage: 25 volts
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Supplier: Qorvo
Description: Qorvo's TGA2514N-FL is a packaged Ku-band power amplifier operating from 13 – 16 GHz. Fabricated on Qorvo's production 0.25um GaAs pHEMT process (QPHT25), the TGA2514N–FL delivers 6.5 W of saturated output power with 24 dB of small signal gain. Performance is ideal for
- Amplifier Type: Power Amplifier
- Applications: Military / Defense
- Frequency Range: 13000 to 16000 MHz
- Maximum Gain: 24 dB
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Supplier: Broadcom Inc.
Description: The ALM-32120 is a high linearity 2 Watt PA with good Output IP3 performance and exceptionally good Power Added Efficiency, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process. This 2 Watt power amplifier is housed inside a
- Amplifier Type: Power Amplifier, Other
- Frequency Range: 700 to 1000 MHz
- Maximum Gain: 15.5 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Qorvo
Description: Qorvo's TGA2752-SM is a C-Band Power Amplifier with integrated power detector. The TGA2752-SM operates from 7.1 – 8.5 GHz and is designed using Qorvo's power GaAs pHEMT and GaN HEMT production processes. The TGA2752-SM typically provides 40 dBm of saturated output
- Amplifier Type: Power Amplifier
- Applications: SATCOM Amplifier
- Frequency Range: 7100 to 8500 MHz
- Maximum Gain: 28 dB
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Supplier: Fairview Microwave Inc.
Description: connectors and rated at 10 Watt. Our SMA high power RF amplifier design has a 40 dB minimum gain. Fairview RF high power high gain amplifier part number SPA-014-40-10-SMA is rated with a P1dB of 40 dBm. Our radio frequency high power amplifier
- Amplifier Type: Power Amplifier
- Frequency Range: 1200 to 1400 MHz
- Maximum Operating Voltage: 13 volts
- Minimum Gain: 40 dB
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Supplier: Fairview Microwave Inc.
Description: RF power amplifier SPA-035-43-10-SMA from Fairview Microwave is just one amp of a large selection of in-stock radio frequency amplifiers specifically stocked to be highly available for quick shipment. Fairview RF power amplifier is a connectorized high
- Amplifier Type: Power Amplifier
- Frequency Range: 3100 to 3500 MHz
- Gain Flatness: 1.5 dB
- Maximum Gain: 45 dB
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Supplier: Analog Devices, Inc.
Description: Product Details The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band
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Supplier: Analog Devices, Inc.
Description: Product Details The HMC591 is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier which operates from 6 to 10 GHz. This amplifier die provides 23 dB of gain and +34 dBm of saturated power, at 24% PAE from a +7.0V supply. Output IP3 is +43 dBm
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Supplier: Analog Devices, Inc.
Description: Product Details The HMC590 is a high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifier which operates from 6 to 10 GHz. This amplifier die provides 24 dB of gain, +31.5 dBm of saturated power at 25% PAE from a +7.0V supply. The RF I/Os are DC blocked and
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Supplier: Analog Devices, Inc.
Description: Product Details The HMC7891 is a limiting amplifier that operates over the band of 2 GHz to 18 GHz, with a high gain of 47 dB. The amplifier provides a saturated output power of 13 dBm over the input power range of -30 dBm to +10 dBm, for a limiting
- Amplifier Type: Limiting Amplifier
- Frequency Range: 2000 to 18000 MHz
- Minimum Operating Voltage: 8 volts
- Operating Temperature: -40 to 85 C
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Supplier: Picosecond Pulse Labs, Inc.
Description: Features Linear Amplifier 26dB Gain 2.5kHz to 10GHz Bandwidth >4Vp-p Linear Output Low Power Dissipation Temperature Compensated Applications Linear Amplification General Puropse Lab Use
- Amplifier Type: Other
- Frequency Range: 10000 MHz
- Maximum Gain: 26 dB
- Minimum Gain: 26 dB
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Supplier: Maxim Integrated
Description: The MAX4223-MAX4228 current-feedback amplifiers combine ultra-high-speed performance, low distortion, and excellent video specifications with low-power operation. The MAX4223/MAX4224/MAX4 226/MAX4228 have a shutdown feature that reduces power-supply current to 350µA and places
- Device Type: Power Operational Amplifiers, Video / Wideband Amplifiers
- Package Type: SOIC
- RoHS Compliant: Yes
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Supplier: Custom MMIC
Description: The CMD249is a wideband GaAs MMIC power amplifier die which operates from DC to 20 GHz. The amplifier delivers greater than 12 dB of gain with a corresponding output 1 dB compression point of +29 dBm and output IP3 of 38 dBm at 10 GHz. The CMD249 is a 50 ohm
- Amplifier Type: Power Amplifier
- Frequency Range: 20000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 13 dB
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Supplier: RFMW
Description: Amplifier, Power Amplifier Module, 6- 18 GHz, 30 dBm, 8 dB, AlGaAs/InGaAs PHEMT
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Supplier: Wolfspeed
Description: The CMPA601C025F GaN HEMT MMIC amplifier offers 25 watts of power from 6 to 12 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally enhanced, 10-lead ceramic package. This delivers a high-power 6- to 12-GHz, high-efficiency
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Supplier: Richardson RFPD
Description: The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 300 MHz to 6 GHz. No external matching is required to achieve full band operation.
- Amplifier Type: Power Amplifier
- Frequency Range: 300 to 6000 MHz
- Maximum Gain: 28 dB
- Maximum Operating Voltage: 50 volts
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Supplier: Skyworks Solutions, Inc.
Description: The SKY65404-31 is an ultra Low-Noise Amplifier (LNA) intended for 5 GHz wireless receiver applications. Its industry-leading Noise Figure (NF), together with high linearity, makes it ideal as a first stage LNA in 802.11a Wireless Local Area Network (WLAN) radios. Operating with a
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 4900 to 5900 MHz
- Maximum Gain: Over 13 dB
- Maximum Operating Voltage: 3.3 volts
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Supplier: DigiKey
Description: RF Amplifier IC General Purpose 6GHz ~ 10GHz Die
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 6000 to 10000 MHz
- Maximum Gain: 23 dB
- Maximum Operating Voltage: 7 volts
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Supplier: Northrop Grumman Corporation
Description: 252 GaN Driver Amplifier 10-14 25.5 34 38 Die Limited Samples NEW APN250 GaN Power Amplifier 10-14 13 39 42 Die Limited Samples NEW
- Amplifier Type: Power Amplifier
- Applications: Military / Defense
- Frequency Range: 10000 to 46000 MHz
- Maximum Gain: 25.5 dB
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Supplier: Marki Microwave, Inc.
Description: sufficient power to drive the LO port of an S-diode mixer from 10 MHz to 15 GHz or of an H or L diode mixer from 10 MHz to 20 GHz. This amplifier can be operated with a variety of bias conditions for both low power and high-power applications.
- Amplifier Type: Other
- Frequency Range: 10 to 20000 MHz
- Package Type: Other
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Supplier: QuinStar Technology, Inc.
Description: QuinStar Technology’s series QPJ power amplifiers offer state of the art power performance in the 0.5-18 GHz frequency range. A wide range of gain values is offered for significantly high power output levels. These amplifiers offer gain in the 10-50
- Amplifier Type: Power Amplifier
- Frequency Range: 500 to 18000 MHz
- Gain Flatness: 2 to 3.5 dB
- Maximum Gain: 50 dB
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Supplier: Richardson RFPD
Description: 0.47- 0.96 GHz UHF 10 W LOW NOISE POWER AMPLIFIER WPA0510A. WPA0510A is a low noise figure, wideband, and high linearity class A operation power amplifier. The amplifier offers typical 40.0 dBm output P1dB, 0.90 dB noise figure, 50 dB gain, and 52.0
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Supplier: Infineon Technologies AG
Description: prescaler, with output frequencies of 1.5 GHz and 23 kHz, is included. The main RF output delivers typ. 11 dBm signal power to feed an antenna. Output power sensors, as well as a temperature sensor, are implemented for monitoring purposes. The device is controlled via SPI. The
- Bus Width: 16-Bit, 32-Bit
- Category: Development Board
- Supported System: Other
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Supplier: Utmel Electronic Limited
Description: RF Amp Module Single Power Amp 2.57GHz 4.2V 10-Pin SMD T/R
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: NuWaves Ltd.
Description: The NuPower™ 12B01A L- & S-Band Power Amplifier is a broadband, high-performance solid-state power amplifier module designed to have a very low SWaP profile. This unidirectional SSPA provides up to 50% module efficiency, delivering at least 10 watts of RF
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Mobile / Wireless Systems
- Frequency Range: 1000 to 2500 MHz
- Maximum Gain: 42 dB
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Supplier: Microwave Photonic Systems, Inc.
Description: The MP-2350RX is a comprehensive family of RF/Fiber Optic Receivers that are designed to provide optical-to-electrica l (O/E) conversion of broadband RF signals over a frequency range of 1.0 MHz to 3.5 GHz. The receiver family is comprised of four model variants that operate over a
- Cable Type: Single Mode
- Connector Type: FC, SC, Other
- Operating Temperature: -40 to 185 F
- Photodiode Type: PIN
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Supplier: ValueTronics International, Inc.
Description: The AR8829-10 is a 2 GHz 10 Watt RF Amplifier from Comtech PST. Amplify RF and Microwave signals to measure, test, and design circuits. Applications include radio communications, cellphones, EMI testing, and much more. Additional Features: Maximum Frequency: 2 GHz
- Frequency Range: 2000 MHz
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Description: 10-16 GHZ HIGH POWER AMPLIFIER
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Supplier: Rohde & Schwarz USA, Inc.
Description: The R&S®BBA150 broadband amplifier family generates power in the frequency range from 9 kHz to 6 GHz. The compact amplifiers are rugged and feature high availability. They are ideal for amplitude, frequency, phase and pulse modulation. Extensive switching options for
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 0.0090 to 6000 MHz
- Gain Flatness: 4 dB
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Supplier: Microchip Technology, Inc.
Description: applications. The amplifier provides a 15 dB of gain with a rising slope, 3.5 dB noise figure, and 27 dBm of output power at 3 dB gain compression with the nominal bias of 235 mA from a 10 V supply. Output IP3 is typically 35 dBm. The MMA052AA amplifier is DC coupled and
- Package Type: Other
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Supplier: Transcat, Inc.
Description: Product Highlights 9 kHz to 7 GHz; internal pre-amplifier to 7 GHz Optional 7 GHz tracking generator with built-in VSWR bridge Optional AM/FM, ASK/FSK demodulation analysis ±0.3 dB absolute amplitude accuracy +10 dBm third order intercept
- Frequency Range: 9 to 7.00E6 kHz
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Supplier: VAST STOCK CO., LIMITED
Description: Precision Amplifiers 1.45GHz Ultra Low Noise Low power Op Amp
Find Suppliers by Category Top
Featured Products Top
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Qorvo’s QPA1009 is a laminate packaged wide band power amplifier MMIC fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 10.7 – 12.7 GHz, the QPA1009 provides greater than 16 Watts (42 dBm) of saturated output power and 16 dB of large (read more)
Browse Power Operational Amplifiers Datasheets for Qorvo -
Qorvo's QPA1315 is a packaged high power MMIC amplifier, Ku-K band, fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). QPA1315 is targeted for 15.4 - 17.7 GHz band. It provides 35 W of saturated output power with 21 dB of large signal gain while achieving 20 (read more)
Browse Power Operational Amplifiers Datasheets for Qorvo -
Qorvo's QPM0106 is a packaged, high power amplifier fabricated on Qorvo's production 0.25 um GaN on SiC process. The QPM0106 operates from 1.0? - 6.0 GHz and provides 45.4 dBm (35 W) of saturated output power with 22.4 dB of large signal gain and 41 % power–added efficiency. (read more)
Browse Power Amplifiers Datasheets for Qorvo -
Qorvo's QPA4246D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band. QPA4246D achieves 5 W linear power with 25 dBc third order intermodulation distortion products, and 16 d (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA0812 is a packaged, high performance power amplifier fabricated on Qorvo's production QPHT15 (0.15um) pHEMT process. Covering 8.5?-?10.5 GHz, the QPA0812 provides 1 W of saturated output power and 24 dB of large-signal gain while achieving 48% power-added efficiency. Packaged (read more)
Browse RF Amplifiers Datasheets for Qorvo -
Qorvo’s QPA0001 is a packaged driver amplifier fabricated on Qorvo’s 0.15 um QGaN15 on SiC process. Operating from 8.5 to 10.5 GHz, the QPA0001 can deliver 2 W saturated output power, 50 % power-added efficiency and 27 dB of large signal gain. QPA (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
, the output voltage can go up to other level specified by customers (10K V rms. maximum). The output power rating of our power amplifiers ranges between 50 watts to 1400 watts as an individual unit. Higher power or multiple-phase configurations can be achieved by combining multiple units. The power (read more)
Browse Power Amplifiers Datasheets for Amp-Line Corp. -
The ADM-8344PC is a wideband distributed low noise amplifier capable of providing 18 dB gain and +27 OIP3 from DC to 18 GHz. Featuring a low 1.4 dB noise figure from 4 to 7 GHz and excellent return losses, it is an ideal linear signal amplifier for applications requiring low power consumption and small form-factors. It can be driven from a single +5V supply for ease of use. Available in a connectorized module. (read more)
Browse RF Amplifiers Datasheets for Marki Microwave, Inc. -
Output Channels: 9 Output Power: 90 watts total (10 watts per channel) Output Current: 0 - 1 A rms. @ 10 V compliance volts Frequency Range: 300 Hz - 2K Hz Model AL-120-CR-L/A-6 6-channel Constant Current Power Amplifier (Customer: Kongsberg Maritime (read more)
Browse Power Amplifiers Datasheets for Amp-Line Corp. -
The QPL3050 is a broadband MMIC driver amplifier housed in a leadless 3x3 mm plastic surface mount package. The QPL3050 is ideally suited for EW and communications systems where small size and low power consumption are needed. The broadband device delivers 18 dB of gain and 20 d (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo
More Information Top
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Gallium Nitride Electronics
The performance of AlGaN/GaN HEMTs for 2.8 GHz and 10 GHz power amplifier applications is evaluated in [2.528] for military applications.
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Microwave Field-Effect Transistors: Theory, design and applications
This example describes the design of a 9 to 10 GHz power amplifier .
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Comparative analysis of RF wide bandgap technologies for UMTS applications
A. Zhang, L. Rowland, E. Kaminsky, J. Kretchmer, V. Tilak, A. Allen, and B. Edward, “Performance of AlGaN/GaN HEMTs for 2.8 GHz and 10 GHz power amplifier applications,” in IEEE MTT-S Int.
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A broadband power amplifier design based on the extended resonance power combining technique
Abstract — A 4-to- 10 GHz power amplifier based on a modified extended resonance power combining technique is presented.
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A 5-10 GHz, 1-Watt HBT amplifier with 58% peak power-added efficiency
There is no published data available on I-W, 5- 10 GHz Power amplifier with > 50% power-added efficiency using MESFET or PHEMT device technologies.
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A Ku band internally matched high power GaN HEMT amplifier with over 30% of PAE
Performance of AlGaN/GaN HEMTs for 2.8 GHz and 10 GHz power amplifier applications.
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5W Highly Linear GaN power amplifier with 3.4 GHz bandwidth
A. Zhang, L. Rowland, E. Kaminsky, J. Kretchmer, V. Tilak, A. Allen, and B. Edward, “Performance of AlGaN/GaN HEMTs for 2.8 GHz and 10 GHz power amplifier applications,” in IEEE MTT-S Int.
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A digitally controlled DC/DC converter for an RF power amplifier
[4] N. Wang, V. Yousefzadeh, D. Maksimovic, S. Pajic, and Z. Popovic, “60% efficient 10 GHz power amplifier with dynamic drain bias con- trol,” IEEE Trans. Microw.
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Recent developments in compound semiconductor microwave power transistor technology
An 8 W, 10GHz power amplifier for Escan radar applications is shown in Fig. 3, which was fabricated using the process described later in this paper.
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Amplifier Circuits - Power, page 1
1W 10GHz Power Amplifier - We briefly describe here the 2-stages PA built to increase the power of the homebuilt transverter without impacting its originally compact design. . . .