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Supplier: Broadcom Inc.
Description: The ALM-32120 is a high linearity 2 Watt PA with good Output IP3 performance and exceptionally good Power Added Efficiency, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process. This 2 Watt power amplifier is housed inside
- Amplifier Type: Power Amplifier, Other
- Frequency Range: 700 to 1000 MHz
- Maximum Gain: 15.5 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Broadcom Inc.
Description: Avago Technologies’ ALM-31322 is a high linearity 1 Watt PA with good OIP3 performance and exceptionally good PAE at P1dB gain compression point, achieved through the use of Avago's proprietary 0.25um GaAs E-pHEMT process. This linear amplifier offers
- Amplifier Type: Power Amplifier, Other
- Frequency Range: 3300 to 3900 MHz
- Maximum Gain: 14.8 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Qorvo
Description: and resistors for bias control. The QPA9801 provides 26 dBm P1dB with 20 dB gain and 42 dBm OIP3 across a wide frequency range of 1805-2400 MHz to cover the 3GPP Bands 1, 2, 3, 4, 10, 23 and 30. The linear driver amplifier is targeted for use in wireless infrastructure
- Applications: Mobile / Wireless Systems
- Frequency Range: 1805 to 2400 MHz
- Maximum Gain: 20 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Broadcom Inc.
Description: Avago Technologies’ ALM-31222 is a high linearity 1 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain compression point, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process.
- Amplifier Type: Power Amplifier, Other
- Frequency Range: 1700 to 2700 MHz
- Maximum Gain: 16.8 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Broadcom Inc.
Description: Avago Technologies’ ALM-31122 is a high linearity 1 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain compression point, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process.
- Amplifier Type: Power Amplifier, Other
- Frequency Range: 700 to 1000 MHz
- Maximum Gain: 17.3 dB
- Maximum Operating Voltage: 5 volts
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Supplier: ValueTronics International, Inc.
Description: Gain: 50db Gain Variation: + 1.5db Max. Class A Linear Power Output: 50 watts Max Power Output: 100 Watts CW & Pulse, 1.5-220 MHz RF Input: Type N RF Output: Type N The Model 550L RF Amplifier is an air-cooled source of power for
- Frequency Range: 400 MHz
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Supplier: ValueTronics International, Inc.
Description: The 30L is a 250 MHz 30 Watt RF Amplifier from Amplifier Research. Amplify RF and Microwave signals to measure, test, and design circuits. Applications include radio communications, cellphones, EMI testing, and much more. Additional Features: Rugged Construction
- Frequency Range: 250 MHz
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Supplier: ValueTronics International, Inc.
Description: 250 kHz to 105 MHz and a linear power output of 100 W. Amplifier gain is a nominal 55 dB. Input/output impedance of 50 ohms, VSWR input 1.5:1 max, output 2.5:1 max. Each unit has a built in meter that indicates both output RF voltage as well as power output into 50
- Frequency Range: 105 MHz
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Supplier: Qorvo
Description: Qorvo's TQP9218 is a high-linearity two-stage power amplifier in a low-cost surface-mount package with on-chip bias control and temperature control circuits. The amplifier provides 31 dB gain and +24.5 dBm linear power over the 1.805 – 1.880 GHz frequency
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 1805 to 1880 MHz
- Maximum Gain: 31.5 dB
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Supplier: ValueTronics International, Inc.
Description: Flatness: 2 dB Input Connector Type: Type-N(f) Output connector type: Type-N(f) Forced air cooling Class A linearity Rugged, compact design Switching Power supply Thermal protection The ENI 607L is a 1 GHz 7-Watt RF Amplifier with a dB gain of 45 and a flatness of
- Frequency Range: 1000 MHz
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Supplier: Qorvo
Description: The QPA9418 is a high-linearity two-stage power amplifier in a low-cost surface-mount package with on-chip bias control and temperature control circuits, suitable for small cell base station applications. The QPA9418 provides 30.5 dB gain and +27 dBm linear power over the
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 1805 to 1880 MHz
- Maximum Gain: 30.5 dB
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Supplier: Qorvo
Description: Qorvo's TQP7M9105 is a 1W 5V high-linearity driver amplifier in a standard SOT-89 surface-mount package. At 0.9 GHz, the TQP7M9105 offers 19.4 dB gain, ultra-high 49 dBm OIP3, and +30 dBm of compressed 1dB power while drawing a very low 220 mA current. Internal circuitry
- Applications: Mobile / Wireless Systems
- Frequency Range: 50 to 1500 MHz
- Maximum Gain: 19.4 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Richardson RFPD
Description: 100 – 500 MHz 1.5-WATT POWER AMPLIFIER WBPA0105A. WBPA0105A is a high power and high linearity connectorized amplifier with unconditional stable design. The amplifier offers typical 17.0 dB gain, 32 dBm P1dB, and 50.0 dBm output IP3 at the frequency
- Amplifier Type: Power Amplifier
- Frequency Range: 100 to 500 MHz
- Maximum Gain: 17 dB
- Maximum Operating Voltage: 12 volts
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Supplier: Richardson RFPD
Description: 2.2 – 2.5 GHz 4.0 WATTS LOW NOISE POWER AMPLIFIER WBPA2225A. WBPA2225A is a low noise figure, high power, and high linearity connectorized amplifier with unconditional stable design. The amplifier offers typical 1.50 dB noise figure, 23 dB gain, 36.0 dBm
- Amplifier Type: Power Amplifier
- Frequency Range: 2200 to 2500 MHz
- Maximum Gain: 23 dB
- Maximum Operating Voltage: 10 volts
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Supplier: Richardson RFPD
Description: 2.3 – 2.5 GHz 7.0 WATTS POWER AMPLIFIER WBPA2224A. WBPA2224A is a high power and high linearity connectorized amplifier with unconditional stable design. The amplifier offers typical 11.0 dB gain, 39 dBm P1dB, and 50.0 dBm output IP3 at the frequency range
- Amplifier Type: Power Amplifier
- Frequency Range: 2300 to 2500 MHz
- Maximum Gain: 11 dB
- Maximum Operating Voltage: 10 volts
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Supplier: Richardson RFPD
Description: 1.5 – 2.8 GHz 2 WATTS LOW NOISE POWER AMPLIFIER WBPA1530A. WBPA1530A is a low noise figure, wideband, and high linearity class A power amplifiers with unconditional stable design. The amplifier offers typical 1.5 dB noise figure, 33.0 dBm output
- Amplifier Type: Power Amplifier
- Frequency Range: 1500 to 2800 MHz
- Maximum Gain: 38 dB
- Maximum Operating Voltage: 10 volts
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Supplier: Custom MMIC
Description: greater than 22.5 dB of gain with a corresponding output 1 dB compression point of +17 dBm and a noise figure of 1 dB. The CMD219C4 low noise amplifier MMIC features an RF input power survivability of greater than 5 Watts. Features High gain High linearity
- Amplifier Type: Low Noise Amplifier
- Applications: Military / Defense, Radar Systems, SATCOM Amplifier, Terrestrial RF/Microwave Systems
- Frequency Range: 4000 to 8000 MHz
- MMIC Technology Required: Yes
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Supplier: Custom MMIC
Description: with a corresponding output 1 dB compression point of +25.5 dBm and a noise figure of 1.2 dB. The CMD276C4 features an RF input power survivability of greater than 5 Watts. Features High gain Low noise figure High linearity High RF power survivability
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 2600 to 4000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 14.5 dB
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Supplier: Custom MMIC
Description: corresponding output 1 dB compression point of +26.5 dBm and a noise figure of 1.2 dB. The CMD277C4 features an RF input power survivability of greater than 5 Watts. Features High gain Low noise figure High linearity High RF power survivability Pb
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 5000 to 7000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 20 dB
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Supplier: Custom MMIC
Description: corresponding output 1 dB compression point of +28 dBm and a noise figure of 1.8 dB. The CMD278C4 features an RF input power survivability of greater than 5 Watts. Features High gain Low noise figure High linearity High RF power survivability Pb
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 8000 to 12000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 15 dB
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Supplier: Win Source Electronics
Description: Manufacturer: AMIS Category: Integrated Circuits (ICs)>Linear>Amplifi ers>Video Amps and Modules Package: 292-LBGA Product Status: Active Resistance (Ohms): 8.2k Tolerance: ±20% Power (Watts): 30 W Composition: Wirewound Features: RF Amplifier IC Cellular, ISM, SMR 800MHz
- Package Type: Other
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Supplier: Amp-Line Corp.
Description: Wideband AC power amplifier: Broadband, Linear, 5 Hz - 1M Hz, 0-28 V rms. 50 watts. DC-coupled option and optional output transformer available to obtain different output voltage ranges in audio, ultrasonic and RF frequencies.
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Supplier: Wolfspeed
Description: The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small over molded plastic package. Features
- Operating Frequency: 900 to 2700 MHz
- Output Power: 12 watts
- Package Type: Other
- Power Gain: 20 dB
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Supplier: RS Components, Ltd.
Description: RF/IF Gain and Phase Detector - Amplifiers & Comparators - RF Amplifiers Delivery on production packaging - Tube. This product is non-returnable.
- Amplifier Type: Other
- Output Power( P1dB): 30 dBm
- Package Type: Surface Mount Technology (SMT)
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Supplier: Skyworks Solutions, Inc.
Description: dBm output power and a 40 percent power-added efficiency (PAE). The device receive chain features a low-noise amplifier (LNA) with a 1.5 dB noise figure (NF) and 15 dB gain. The cascaded NF and gain, taking into account the 0.5 dB insertion loss transmit/receive antenna switch, are
- Amplifier Type: Power Amplifier
- Maximum Operating Voltage: 3.8 volts
- Minimum Operating Voltage: 3 volts
- Output Power( P1dB): 30 dBm
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Supplier: QuinStar Technology, Inc.
Description: and combinations of input and output coaxial connectors or waveguide ports. For 18 to 40 GHz amplifiers, we offer 2.9 mm coaxial connectors, and 2.4 mm for 40-50 GHz and 1.9 mm connectors for frequencies beyond. Appropriate waveguide input and/or output ports are offered for the entire
- Amplifier Type: Power Amplifier
- Frequency Range: 18000 to 95000 MHz
- Gain Flatness: 1.25 to 4 dB
- Maximum Gain: 50 dB
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Supplier: MACOM
Description: At MACOM we design, manufacture, and support a wide variety of power amplifiers for RF, microwave, and millimeter wave applications. Our Power amplifiers cover 40 KHz to 90 GHz operation for a wide range of both linear and saturated applications, including network
- Amplifier Type: Power Amplifier
- Applications: Terrestrial RF/Microwave Systems
- Frequency Range: 0.0 to 86000 MHz
- Maximum Gain: 30 dB
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Supplier: DigiKey
Description: GAIN BLOCK, 2000 - 8000 MHZ, 50
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 2000 to 8000 MHz
- Maximum Gain: 30 dB
- Maximum Operating Voltage: 12 volts
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Supplier: Empower RF Systems
Description: Solid-state linear design, suitable for CW/FM/PM/AM/digital/WCDMA
- Amplifier Type: Power Amplifier
- Frequency Range: 2110 to 2170 MHz
- Gain Flatness: 1 dB
- Maximum Gain: 20 dB
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Supplier: Fairview Microwave Inc.
Description: connectors and rated at 1 Watt. Our SMA medium power RF amplifier design has a 30 dB minimum gain. Fairview RF medium power amplifier part number FMAM4056 is rated with a P1dB of 30 dBm. Our radio frequency medium power amplifier is constructed
- Amplifier Type: Power Amplifier
- Frequency Range: 2000 to 18000 MHz
- Maximum Operating Voltage: 12 volts
- Minimum Gain: 30 dB
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Supplier: AR RF/Microwave Instrumentation
Description: The Model 1U1000 is a solid-state, self-contained, air-cooled, broadband amplifier designed for applications where instantaneous bandwidth, high gain and linearity are required. Housed in a stylish, contemporary cabinet, the unit is designed for benchtop use. The Model
- Frequency Range: 0.0100 to 1000 MHz
- Output Power( P1dB): 30 dBm
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requirements. A power amp might be matched to a signal source that would otherwise generate too little power to be useful. A signal generator, for example, might produce 30 dBm, or 1 watt, insufficient to generate the necessary field intensity for testing. A power amp takes the signal and (read more)
Browse RF Amplifiers Datasheets for A.H. Systems Inc. -
generator, for example, might produce 30 dBm, or 1 watt, insufficient to generate the necessary field intensity for testing. A power amp takes the signal and, with a 50-ohm impedance cable to the transmission antenna, typically provides an output of 25 watts or more. Noise is not a large factor for a (read more)
Browse RF Amplifiers Datasheets for A.H. Systems Inc. -
-pull amplifiers, and RF power amplifiers. Power amplifiers are typically found in the final output stages of a circuit. There are five classes of power amplifiers: Class A, B, AB, C, and D. Let’s take a look at the characteristics of each. Class A power amplifiers’ (read more)
Browse RF Amplifiers Datasheets for ASAP Semiconductor LLC -
suitable for use in a broad range of ATE, OEM and laboratory applications such as component testing, semiconductor burn-in, test and measurement, RF Amplifiers, LED/laser testing, as well as a variety of electromagnetic and electromechanical applications (read more)
Browse Switching Power Supplies Datasheets for Acopian Power Supplies -
Qorvo's QPA1722 is a high power, packaged K-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1722 targets the 17.7 – 20.2 GHz Satcom band while providing 5 Watts of linear power with third-order intermodulation distortion products (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1724D is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1724D targets the 17.3 – 21.2 GHz Satcom band providing 5 Watts of linear power with third-order intermodulation distortion products of 22 d (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1314 is a packaged high power MMIC amplifier, fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). QPA1314 is targeted for 13.75 – 14.5 GHz Satcom band. Linear power is 20 W with 25 dBc third order intermodulation distortion products. It (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
The relationship between current and voltage within a transimpedance amplifier is linear. So when the input current doubles, the output voltage will also double. This linearity makes it a very predictable system, enhancing accuracy in calibration and interpretation (read more)
Browse Amplifier and Comparator Chips Datasheets for ODG (Origin Data Global) -
The ADM-8536PSM is the world's smallest 2-20 GHz high linearity, low noise amplifier solution, featuring 10.5 dB gain, +25 dBm OIP3 and 2.5 dB noise figure that makes it suitable for use in RF front ends. The amplifier is designed for ease of use due to its internal bias network, DC blocking and RF matching, while its compact 1.3 x 2 mm DFN package and low power consumption make it an ideal choice for low SWaP applications. (read more)
Browse RF Amplifiers Datasheets for Marki Microwave LLC -
Qorvo's QPA0016 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA0016 targets the 13.75-14.5 GHz Satcom band while providing 5-Watts of linear power with third-order intermodulation distortion products of 25 d (read more)
Browse Power Operational Amplifiers Datasheets for Qorvo
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MA-COM Technology Solutions Announces New 1 Watt Linear RF Driver Amplifier For MILCOM And Infrastructure Applications
M/A-COM Technology Solutions Announces New 1 Watt Linear RF Driver Amplifier For MILCOM And Infrastructure Applications .
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M/A-COM Extends Amplifier Family For Infrastructure Applications
• PA2001: 1 Watt RF linear driver amplifier with a low noise figure of 2 dB and a high OIP3 level of +46.5 dBm .
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Fluorescence studies of protein crystal nucleation
The first is a 25 Watt Linear RF amplifier with a frequency range of 1 -500MHz, and the second is a 4 Watt Broadband RF amplifier with a frequency range 0.5 to 1000MHz.
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Extending dynamic range of RF PWM transmitters
References 1 Reynaert, P., and Steyaert, M.: ‘ RF power amplifiers for mobile com- munications’, (Springer, the Netherlands, 2006) 2 François, B., and Reynaert, P.: ‘A fully integrated watt -level linear 900 MHz CMOS RF power amplifier for LTE-applications,’ IEEE …
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Proceedings of the heavy ion fusion workshop
The amplifier is a 4 MHz, 2 stage, 700 watt linear amplifier with broadband interstage coupling. The input rf amplitude range is 0 to 1 volt peak, for an output power level from 0 to maximum.
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Analysis and Optimization of Transformer-Based Power Combining for Back-Off Efficiency Enhancement
58, no. 1 , pp. 37–50, Jan. 2011. [13] B. Francois and P. Reynaert, “A fully integrated watt -level linear 900-MHz CMOS RF power amplifier for lte-applications,” IEEE Trans. Microw.
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Mobile Communications Engineering: Theory and Applications, Second Edition > Modulation Technology
For example, an RF amplifier for operating in a linear range has to take 6 dB output back off (OBO). This means that a 4- watt amplifier can only operate at 1 watt maximum power.
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Index to Subjects
… Sep 1660 Transformer, 100:1 Bandwidth Balun: Feb 156 Transforms for Analysis of Linear Systems, Laurent-Cauchy: May … … Nonlinear Systems Taylor-Cauchy: 1 May 912 Transforms, Steady … … Dec 2033 Traveling-Wave Amplifier for the 5 6 Milli- meter Band, Half- Watt CWV … Capacitors, Gain of a: Dee 2018 Traveling-Wave Tube, Electrostaticallv Fo- cused, Small- RF -Signal Theory: Nov …
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Description of the M1 MEQALAC and operating results
The amplifier is a 4 MHz, 2 stage, 700 watt linear amplifier with broadband interstage coupling. The input rf amplitude range is 0 to 1 volt peak, for an output power level from 0 to maximum.
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A 60-GHz Power Amplifier Design Using Dual-Radial Symmetric Architecture in 90-nm Low-Power CMOS
[21] S. Shim and S. Hong, “A 1 -W, 800-MHz, switch-mode CMOS RF power amplifier using an on-chip transformer with double primary sides,” in RWS Dig., Jan. 2009, pp. 538–541. [22] B. Francois and P. Reynaert, “A fully integrated watt -level linear 900-MHz CMOS RF power amplifier for LTE-applications,” IEEE Trans. Microw.