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Supplier: Infineon Technologies AG
Description: MOSFET IRFI4212H-117P | N-Channel Power MOSFET IRS2093MPBF | Discrete Class D Audio Amplifier ICs IRF3205 | N-Channel Power MOSFET 1 2
- Package Type: TO-220, Other
- Packing Method: Shipping Tube / Stick Magazine, Other
- Polarity: N-Channel, Other
- TJ: 175 C
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Supplier: Infineon Technologies AG
Description: | Discrete Class D Audio Amplifier ICs ICE3RBR0665JZ | CoolSET™ Fixed Frequency IPA60R160P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPA60R190P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2
- Package Type: Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
- TJ: 150 C
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Supplier: Infineon Technologies AG
Description: MOSFET IPD50P04P4-13 | Automotive MOSFET IRFI4212H-117P | N-Channel Power MOSFET IRFB7437 | N-Channel Power MOSFET IRS2093MPBF | Discrete Class D Audio Amplifier ICs BSC060P03NS3E G | P-Channel Power MOSFET 1
- Package Type: TO-220, Other
- Packing Method: Shipping Tube / Stick Magazine, Other
- Polarity: N-Channel, Other
- TJ: 175 C
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Supplier: Infineon Technologies AG
Description: ) Designers who used this product also designed with IRF1405 | N-Channel Power MOSFET IRFB7437 | N-Channel Power MOSFET IRS2093MPBF | Discrete Class D Audio Amplifier ICs IRFR5410 | P-Channel Power MOSFET IRF7324 |
- Package Type: TO-220, Other
- Packing Method: Shipping Tube / Stick Magazine, Other
- Polarity: N-Channel, Other
- TJ: 175 C
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Supplier: JL Audio, Inc.
Description: The JX 360/2 is perfect for those seeking a truly powerful, two-channel Class A/B design. Its robust MOSFET power supply keeps things rock-stable to deliver a very strong 180 watts to each of its two channels into 2 ohms (14.4V, 1% THD). This
- Amplifier Class: Class AB
- Frequency Response: 2.00E-5 MHz
- Type: Amplifier
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Supplier: Radwell International
Description: IC, MOSFET DRIVER, HALF BRIDGE, SOIC-8; NO. OF CHANNELS:2CHANNELS; DRIVER CONFIGURATION:HALF BRIDGE; POWER SWITCH TYPE:MOSFET; NO. OF PINS:8PINS; DRIVER CASE STYLE:SOIC; INPUT TYPE:NON-INVERTING; SOURCE CURRENT:250MA; PRODUCT RANGE:-ROHS COMPLIANT: YES. FREE
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Supplier: Radwell International
Description: MOSFET DRIVER, HALF BRIDGE, DIP-8; NO. OF CHANNELS:2CHANNELS; DRIVER CONFIGURATION:HALF BRIDGE; POWER SWITCH TYPE:IGBT, MOSFET; NO. OF PINS:8PINS; DRIVER CASE STYLE:DIP; INPUT TYPE:-; SOURCE CURRENT:-; SINK CURRENT:-; INPUT DELAY:- ROHS COMPLIANT: YES. FREE
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Supplier: Radwell International
Description: MOSFET DRIVER, HIGH-SIDE, SOIC-8; NO. OF CHANNELS:1CHANNELS; DRIVER CONFIGURATION:HIGH SIDE; POWER SWITCH TYPE:MOSFET; NO. OF PINS:8PINS; DRIVER CASE STYLE:SOIC; INPUT TYPE:NON-INVERTING; SOURCE CURRENT:250MA; SINK CURRENT:500MA ROHS COMPLIANT: YES. FREE 2
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Supplier: Radwell International
Description: (PRICE/TC) MOSFET DRIVER, -25 TO 125DEG C; NO. OF CHANNELS:-; DRIVER CONFIGURATION:HALF BRIDGE; POWER SWITCH TYPE:MOSFET; NO. OF PINS:8PINS; DRIVER CASE STYLE:NSOIC; INPUT TYPE:-; SOURCE CURRENT:-; SINK CURRENT:-; SUPPLY VOLTAGE MIN:11.3V ROHS COMPLIANT:. FREE 2
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Supplier: Nexperia B.V.
Description: conduction losses Suitable for logic level gate drive sources Applications Class-D amplifiers DC-to-DC converters Motor control Server power supplies
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Nexperia B.V.
Description: conduction losses Suitable for logic level gate drive sources Applications Class-D amplifiers DC-to-DC converters Motor control Server power supplies
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: JL Audio, Inc.
Description: The JX360/4 employs a tried-and-true Class A/B design with a robust MOSFET power supply to deliver a strong 90 watts to each of its four channels into 2 ohms (14.4V, 1% THD).
- Amplifier Class: Class AB
- Frequency Response: 2.00E-5 MHz
- Type: Amplifier
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Supplier: RS Components, Ltd.
Description: Power operational amplifiers from Texas Instruments with high current outputs suitable for driving low impedance and difficult loads. Many of these devices are capable of operating at higher supply voltages than general purpose op amps. Typical applications include driving
- Device Type: Operational Amplifiers
- Package Type: Other
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Supplier: Renesas Electronics Corporation
Description: The ISL6322 four-phase PWM control IC provides a precision voltage regulation system for advanced microprocessors. The integration of power MOSFET drivers into the controller IC marks a departure from the separate PWM controller and driver configuration of previous multiphase product
- IC Package Type: Other
- Input Voltage (VIN): 3 to 12 volts
- Output Voltage (Volt): 0.3750 to 1.99 volts
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Supplier: Nexperia B.V.
Description: The NGD4300-Q100 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated
- Package Type: Other
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Supplier: RS Components, Ltd.
Description: Power operational amplifiers from Texas Instruments with high current outputs suitable for driving low impedance and difficult loads. Many of these devices are capable of operating at higher supply voltages than general purpose op amps. Typical applications include driving
- Gain-Bandwidth Product (GBW): 1.2 MHz
- Package Type: Other
- Pin Count: 12
- Slew Rate (SR): 1.2 V/µs
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Supplier: Win Source Electronics
Description: Manufacturer: Skyworks Solutions Inc. Win Source Part Number: 1135014-AAT4900IGV-T 1 Packaging: Reel Mounting Style: SMD Applications: DC Motors, DC-DC Converters Technology: Power MOSFET Interface: On/Off Current - Output / Channel: 2A Fault Protection
- Operating Range: Other
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Supplier: LSI Controls Inc.
Description: LSI Controls, Inc., introduces its small footprint, high efficiency, Integrated Switching Regulators. With a 33% greater current rating (2A continuous / 3A peak), the LS78ST1xx regulators are higher power pin compatible drop-in replacements for the now obsolete TI/Power Trends
- Configuration / Form Factor: Computer Board
- Input Voltage: 18 to 36 volts
- Output Voltage: 15 volts
- Phase: Single Phase
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Supplier: TRINAMIC Motion Control GmbH & Co. KG.
Description: high precision two range current sense amplifiers integrated MOSFET current sensing: no shunt needed hallFX™ sensorless back EMF commutation break-before-make logic: No special µC PWM needed overcurrent, short-2-GND and undervoltage protection and
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Supplier: RS Components, Ltd.
Description: also source-only USB Type-C controllers which are optimized for mobile chargers and power adapters that support standard 3A VBUS current levels. These device also includes gate drive for an external N-channel MOSFET load switch. FAN629xQF and FAN629xQH devices differ in their
- IC Package Type: Other
- Regulator Category: Other
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Supplier: RS Components, Ltd.
Description: Amplifier. Voltage-Mode PWM Leading-edge Modulation Control. Voltage Feed-forward. Dual Channel 5V High Speed 4A MOSFET Gate Drivers. Internal Bootstrap Diodes. Internal Linear Regulator provides a 5.4V Bias from input voltage. External Soft-Start Ramp Reference Input for
- Category: Development Suite / Kit
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The ALD1107 MOSFET is a high-precision P-channel MOSFET transistor array by Advanced Linear Devices. Its low threshold voltage of -0.7V, low input capacitance, and typical offset voltage of only 2mV make it ideal for analog switching and amplifying (read more)
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Product Overview The 2N7002ET1G from ON Semiconductor is a versatile N-Channel MOSFET designed to meet the needs of a wide range of electronic applications, offering high performance and efficiency. Key Features Drain (read more)
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Infineon Technologies BSS138NH6327XTSA2 Overview N-Channel MOSFET: Suitable for various applications requiring efficient power switching. 60V Drain-Source Breakdown Voltage: Capable of handling high voltages (read more)
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The ALD1105 by Advanced Linear Devices is engineered for precision and performance. It combines the power of an N-channel MOSFET with a P-channel MOSFET in a single package. The transistor pair is matched for minimum offset voltage and differential thermal (read more)
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The ALD310702 from Advanced Linear Devices is a monolithic quad P-channel MOSFET array with unrivaled precision in temperature tracking and simplified bias circuitry. The matched pair circuit is designed for the next generation of products requiring extremely low (read more)
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The ALD1106 MOSFET by Advanced Linear Devices is designed to provide superior precision and performance in low-frequency and near-DC operating environments. It features matched transistor pairs that minimize offset voltage and differential thermal response (read more)
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The onsemi NTTFD1D8N02P1E is a high-performance, dual N-channel power MOSFET designed to deliver superior efficiency and compactness for a wide range of applications. Featuring a small footprint of just 3.3 mm x 3.3 mm, this MOSFET is ideal for space (read more)
Browse Power Supplies Datasheets for DigiKey -
The ALD1103, by Advanced Linear Devices, is a monolithic dual N-channel and P-channel matched transistor pair designed for precision and versatility. The chip combines the power of N-channel and P-channel MOSFET pairs in one package. This dual configuration is (read more)
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Toshiba’s SSM10N954L is a 12 V common-drain N-channel MOSFET designed for battery protection circuits used for Lithium-ion (Li-ion) battery packs for mobile devices and other equipment. Li-ion battery packs use highly robust protection-circuits to enhance safety (read more)
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Vishay introduces the SiHK050N65E, an advanced Gen 4.5 650 V E Series power MOSFET delivering superior efficiency for telecom, industrial, and computing applications. This n-channel MOSFET achieves 48.2% lower on-resistance and 65.4% improved resistance times gate charge FOM compared to previous (read more)
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Application of RF LDMOS power transistors for 2.2 GHz wideband-CDMA
RF LDMOS is a modified n- channel MOSFET specifically designed for both high frequency operation and power amplifier applications[ 2 ].
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Power booster audio amplifier
The universal IC with 2 MOSFETs for the same peak power per channel requires different power supply voltages depending on the amplifier topology, as illustrated in Figures 15(b), 16(b) and 17(h),as well as Table 5.
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A built-in technique for probing power-supply noise distribution within large-scale digital integrated circuits
p- channel MOSFETs M1, M 2 for probing power -supply and ground wirings, respectively, and a single MOSFET common-source amplifier (gm)M3.
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Shopping - Best Prices On The Boss Office Products Ce1800m 1800 Watt Chaos Epic Series Monoblock Car Amplifier - Big Bruin
Brand New Boss CE1800M 1800 Watt Chaos Epic Series Monoblock Car Amplifier Features: Chaos Epic Series Monoblock Power Amplifier MOSFET power supply LED power and protect indicators Variable … 0-18 dB) Soft Start Turn-on 2 - Channel operation Remote turn on/off…
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Radiation effects on UHF power MOSFETs
A lateral power MOSFET with a short channel length has been used to develop a high-gain, high-efficiency amplifier in the UHF range[l],[ 2 ].
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A method for negative bias temperature instability (NBTI) measurements on power VDMOS transistors
[21] Agilent Technologies Inc. 2009 Agilent 33502A 2 - channel 50 Vpp isolated amplifier Data sheet [22] Hewlett Packard 1998 Semiconductor parameter analyzer self-paced training manual [23] Grant D and Gowar J 1989 Power MOSFETs : Theory and Applications (New York: Wiley-Interscience…
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Bigbruin.com » Shopping » Electronics » Car Audio » Amplifiers » HFi2000D Car Amplifier - 2000 W RMS - 1 Channel - Class D (1% THD - 15 Hz to 250 Hz - MOSFET Power Supply - 1 x 650 … 1.30 kW @ 2 Ohm) .