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Supplier: Infineon Technologies AG
Description: MOSFET IRFB7437 | N-Channel Power MOSFET IRS2093MPBF | Discrete Class D Audio Amplifier ICs IRFR5410 | P-Channel Power MOSFET IRF7324 | P-Channel Power MOSFET IRF1404Z | N-Channel Power MOSFET IRF1405 |
- rDS(on): 0.011 ohms
- TJ: 175 C
- VGS(off): 3 to 5 volts
- Features: MOSFET, Other, Power MOSFET
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Supplier: Infineon Technologies AG
Description: Power MOSFET CYT2B75BADQ0AZEGST | TRAVEO™ T2G CYT2B7 Series IRS2092SPBF | Discrete Class D Audio Amplifier ICs IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET CYT2B75BADQ0AZEGST | TRAVEO™ T2G CYT2B7 Series IRS2092SPBF | Discrete Class D Audio
- rDS(on): 0.0072 ohms
- TJ: 150 C
- VGS(off): -2.4 to -1.3 volts
- Features: MOSFET, Other, Power MOSFET
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Supplier: Infineon Technologies AG
Description: IRS2093MPBF | Discrete Class D Audio Amplifier ICs IPA60R180C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC500N20NS3 G | N-Channel Power MOSFET IRS2093MPBF | Discrete
- rDS(on): 0.1 ohms
- TJ: 150 C
- VGS(off): 3 to 5 volts
- Features: MOSFET, Other, Power MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel,
- Features: MOSFET
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Supplier: Infineon Technologies AG
Description: BSC007N04LS6 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMT65R022M1H | Silicon Carbide MOSFET Discretes 2EDR8259H | Gate driver ICs 2EDB8259F | Gate driver ICs BSC007N04LS6 | N-Channel Power
- rDS(on): 0.052 ohms
- TJ: -55 to 150 C
- VGS(off): 2 to 4 volts
- Features: MOSFET, Other, Power MOSFET
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Supplier: Radwell International
Description: MOSFET DRIVER, HALF BRIDGE, DIP-8; NO. OF CHANNELS:2CHANNELS; DRIVER CONFIGURATION:HALF BRIDGE; POWER SWITCH TYPE:IGBT, MOSFET; NO. OF PINS:8PINS; DRIVER CASE STYLE:DIP; INPUT TYPE:-; SOURCE CURRENT:-; SINK CURRENT:-; INPUT DELAY:- ROHS COMPLIANT: YES. FREE 2 YEAR
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHZ CELLULAR HANDSETS Product overview: 2SC5260-R from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC
- Features: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) / TRANS MOSFET N-CH 0.08A 4(2-2K1C) Product overview: 2SK2856 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load
- Features: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) / Trans MOSFET N-CH Si 180V 1A Product overview: 2SK2162 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC
- Features: MOSFET
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Supplier: JL Audio, Inc.
Description: The JX 360/2 is perfect for those seeking a truly powerful, two-channel Class A/B design. Its robust MOSFET power supply keeps things rock-stable to deliver a very strong 180 watts to each of its two channels into 2 ohms (14.4V, 1% THD). This
- Frequency Response: 0.00002 MHz
- Type: Amplifier
- Amplifier Class: Class AB
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Supplier: Nexperia B.V.
Description: Suitable for logic level gate drive sources Applications Class-D amplifiers DC-to-DC converters Motor control Server power supplies
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
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Supplier: Nexperia B.V.
Description: Suitable for logic level gate drive sources Applications Class-D amplifiers DC-to-DC converters Motor control Server power supplies
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
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Supplier: JL Audio, Inc.
Description: The JX360/4 employs a tried-and-true Class A/B design with a robust MOSFET power supply to deliver a strong 90 watts to each of its four channels into 2 ohms (14.4V, 1% THD).
- Frequency Response: 0.00002 MHz
- Type: Amplifier
- Amplifier Class: Class AB
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Supplier: Renesas Electronics Corporation
Description: The ISL6322 four-phase PWM control IC provides a precision voltage regulation system for advanced microprocessors. The integration of power MOSFET drivers into the controller IC marks a departure from the separate PWM controller and driver configuration of previous multiphase product
- Output Voltage (Volt): 0.375 to 1.99375 volts
- Input Voltage (VIN): 3 to 12 volts
- Features: Other
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Supplier: Renesas Electronics Corporation
Description: saving power management solution.brbr Output voltage can be programmed using the on-chip DAC or an external precision reference. A 2-bit code programs the DAC reference to one of 4 possible values (0.6V, 0.9V,1.2V and 1.5V). A unity gain, differential amplifier is provided for
- Output Voltage (Volt): 0.6 to 2.3 volts
- Input Voltage (VIN): 5 to 12 volts
- Features: Input Overcurrent Protection, Other
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Supplier: Renesas Electronics Corporation
Description: to high current applications. The integration of power MOSFET drivers into the controller IC marks a departure from the separate PWM controller and driver configuration of previous multi-phase product families. By reducing the number of external parts, this integration allows for a
- Output Voltage (Volt): 0.6 to 2.3 volts
- Input Voltage (VIN): 5 to 12 volts
- Features: Input Overcurrent Protection, Other
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Supplier: Nexperia B.V.
Description: The NGD4300 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated
- IC Package Type: Other
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Supplier: Allied Electronics, Inc.
Description: The IR2130/IR2132(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs,
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Supplier: Allied Electronics, Inc.
Description: The IR2130/IR2132(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs,
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Supplier: Win Source Electronics
Description: Manufacturer: Skyworks Solutions Inc. Win Source Part Number: 1135014-AAT4900IGV-T1 Packaging: Reel Mounting Style: SMD Applications: DC Motors, DC-DC Converters Technology: Power MOSFET Interface: On/Off Current - Output / Channel: 2A Fault Protection: Over Temperature,
- Features: Other
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Supplier: TRINAMIC Motion Control GmbH & Co. KG.
Description: The TMC603 is a three phase BLDC motor driver IC for highly compact and energy efficient drive solutions. Control algorithms previously only found in much more complex servo drives can now be realized with a minimum of external components. The TMC603 directly drives 6 external N-channel
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Supplier: LSI Controls Inc.
Description: LSI Controls, Inc., introduces its small footprint, high efficiency, Integrated Switching Regulators. With a 33% greater current rating (2A continuous / 3A peak), the LS78ST1xx regulators are higher power pin compatible drop-in replacements for the now obsolete TI/Power Trends
- Input Voltage: 18 to 36 volts
- Output Voltage: 15 volts
- Configuration: Computer Board
- Phase: Single Phase
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The ALD1107 MOSFET is a high-precision P-channel MOSFET transistor array by Advanced Linear Devices. Its low threshold voltage of -0.7V, low input capacitance, and typical offset voltage of only 2mV make it ideal for analog switching and amplifying (read more)
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Product Overview The 2N7002ET1G from ON Semiconductor is a versatile N-Channel MOSFET designed to meet the needs of a wide range of electronic applications, offering high performance and efficiency. Key Features Drain (read more)
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Infineon Technologies BSS138NH6327XTSA2 Overview N-Channel MOSFET: Suitable for various applications requiring efficient power switching. 60V Drain-Source Breakdown Voltage: Capable of handling high voltages (read more)
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The ALD1105 by Advanced Linear Devices is engineered for precision and performance. It combines the power of an N-channel MOSFET with a P-channel MOSFET in a single package. The transistor pair is matched for minimum offset voltage and differential thermal (read more)
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The ALD310702 from Advanced Linear Devices is a monolithic quad P-channel MOSFET array with unrivaled precision in temperature tracking and simplified bias circuitry. The matched pair circuit is designed for the next generation of products requiring extremely low (read more)
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The ALD1106 MOSFET by Advanced Linear Devices is designed to provide superior precision and performance in low-frequency and near-DC operating environments. It features matched transistor pairs that minimize offset voltage and differential thermal response (read more)
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The onsemi NTTFD1D8N02P1E is a high-performance, dual N-channel power MOSFET designed to deliver superior efficiency and compactness for a wide range of applications. Featuring a small footprint of just 3.3 mm x 3.3 mm, this MOSFET is ideal for space (read more)
Browse Power Supplies Datasheets for DigiKey -
The ALD1103, by Advanced Linear Devices, is a monolithic dual N-channel and P-channel matched transistor pair designed for precision and versatility. The chip combines the power of N-channel and P-channel MOSFET pairs in one package. This dual configuration is (read more)
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Toshiba’s SSM10N954L is a 12 V common-drain N-channel MOSFET designed for battery protection circuits used for Lithium-ion (Li-ion) battery packs for mobile devices and other equipment. Li-ion battery packs use highly robust protection-circuits to enhance safety (read more)
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Vishay introduces the SiHK050N65E, an advanced Gen 4.5 650 V E Series power MOSFET delivering superior efficiency for telecom, industrial, and computing applications. This n-channel MOSFET achieves 48.2% lower on-resistance and 65.4% improved resistance times gate charge FOM compared to previous (read more)
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Application of RF LDMOS power transistors for 2.2 GHz wideband-CDMA
RF LDMOS is a modified n- channel MOSFET specifically designed for both high frequency operation and power amplifier applications[ 2 ].
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Power booster audio amplifier
The universal IC with 2 MOSFETs for the same peak power per channel requires different power supply voltages depending on the amplifier topology, as illustrated in Figures 15(b), 16(b) and 17(h),as well as Table 5.
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[21] Agilent Technologies Inc. 2009 Agilent 33502A 2 - channel 50 Vpp isolated amplifier Data sheet [22] Hewlett Packard 1998 Semiconductor parameter analyzer self-paced training manual [23] Grant D and Gowar J 1989 Power MOSFETs : Theory and Applications (New York: Wiley-Interscience…
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