-
Supplier: Maxim Integrated
Description: 308, 315, 418, and 433.92MHz. The MAX7042 includes all the active components required in a superheterodyne receiver including a low-noise amplifier (LNA), an image-rejection (IR) mixer, a fully integrated phase-locked loop (PLL), local oscillator (LO), 10.7MHz IF limiting
- Form Factor / Package: Surface Mount Technology (SMT)
- Supply Current: 6.2 mA
-
Supplier: Maxim Integrated
Description: The MAX2634 low-noise amplifier (LNA) with low-power shutdown mode is optimized for 315MHz and 433.92MHz automotive remote keyless entry (RKE) applications. At 315MHz, the LNA achieves 15.5dB power gain and a 1.25dB noise figure while only consuming
- Package Type: SC-70
- Pin Count: 6
- RoHS Compliant: Yes
- Supply Current (IS): 2.5 milliamps
-
Supplier: Maxim Integrated
Description: - and power-sensitive applications typical in the automotive and consumer markets. The chip consists of a low-noise amplifier (LNA), a fully differential image-rejection mixer, an on-chip phase-locked-loop (PLL) with integrated voltage-controlled oscillator (VCO), a 10.7MHz IF
- Form Factor / Package: Surface Mount Technology (SMT)
- Supply Current: 5.2 mA
-
-
Supplier: Digi-Key Electronics
Description: IC AMP RKE 315MHZ 433MHZ SC70-6
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 315 to 433 MHz
- Maximum Gain: 15.5 dB
- Maximum Operating Voltage: 5.5 volts
-
Supplier: Maxim Integrated
Description: The MAX7034 fully integrated low-power CMOS super-heterodyne receiver is ideal for receiving amplitude-shift-keyed (ASK) data in the 300MHz to 450MHz frequency range (including the popular 315MHz and 433.92MHz frequencies). The receiver has an RF sensitivity
- Form Factor / Package: Surface Mount Technology (SMT)
- Supply Current: 6.7 mA
-
Supplier: Skyworks Solutions, Inc.
Description: -range wireless microcontroller (MCU) for operation in 315 MHz, 433 MHz, 470 MHz, 500 MHz, 868 MHz, 915 MHz and 920 MHz ISM bands. The CC1310 wireless MCU offers up to 20 years of battery life, an integrated ARM® Cortex®-M3 MCU, sensor
- Frequency Range: 400 to 510 MHz
- Maximum Operating Voltage: 3.6 volts
- Minimum Operating Voltage: 2.5 volts
- Package Type: Surface Mount Technology (SMT)
-
Supplier: Infineon Technologies AG
Description: -output - Switchable frequency ranges :433 – 435 MHz/868 – 870 MHz - Selectable crystal oscillator 6.78 MHz/13.56 MHz - High efficiency power amplifier (typ. 5 dBm@434 MHz/2 dBm@868 MHz) Target Applications: - Remote Keyless Entry (RKE)
- Device Type: Transmitter
- Features: RoHS Compliant
- IC Package Type: TSSOP, Other
- TJ: -40 to 125 C
-
Supplier: Infineon Technologies AG
Description: for both ASK and FSK modulation. Summary of Features: - Frequency range 311 – 317 MHz/433 – 435 MHz/868 – 870 MHz - ASK and FSK modulation - High efficiency power amplifier typically 10 dBm @ 3 V - Fully integrated frequency synthesizer - VCO
- Device Type: Transmitter
- Features: RoHS Compliant
- IC Package Type: TSSOP, Other
- TJ: -40 to 125 C
-
Supplier: Infineon Technologies AG
Description: for both ASK and FSK modulation Summary of Features: - Frequency range 311 – 317 MHz/433 – 435 MHz/868 – 870 MHz - ASK and FSK modulation - High efficiency power amplifier typically 10 dBm @ 3 V - Fully integrated frequency synthesizer - VCO
- Device Type: Transmitter
- Features: RoHS Compliant
- IC Package Type: TSSOP, Other
- TJ: -40 to 125 C
-
Supplier: Infineon Technologies AG
Description: for both ASK and FSK modulation. Summary of Features: - Frequency range 311 – 317 MHz/433 – 435 MHz/868 – 870 MHz - ASK and FSK modulation - High efficiency power amplifier typically 10 dBm @ 3 V - Fully integrated frequency synthesizer - VCO
- Device Type: Transmitter
- Features: RoHS Compliant
- IC Package Type: TSSOP, Other
- TJ: -40 to 125 C
-
Supplier: RFMW Ltd.
Description: of 30 to 300 MHz and the associated evaluation board is optimized for operation at 250 MHz. Evaluation boards optimized for different voltages and frequency ranges are available upon request. For the 433 MHz ISM band we recommend the pin-compatible SKY67012-396LF, for 866
- Category: Development Board
Find Suppliers by Category Top
Featured Products Top
-
SKY66318-11, a new addition to our family of high-efficiency power amplifiers (PA) designed for the stringent (read more)
Browse Power Amplifiers Datasheets for Skyworks Solutions, Inc. -
600A400, when used with a sweep generator, will provide a minimum of 600 watts of RF power from .01-250MHz, 500 watts of RF power from 250MHz-400MHz. Included is a front panel gain control which permits the operator to conveniently set the desired output level. The 600A400 is protected from RF input (read more)
Browse RF Amplifiers Datasheets for AR RF/Microwave Instrumentation -
generator, will provide a minimum of 500 watts of RF power from .01-250MHz. Included is a front panel gain control which permits the operator to conveniently set the desired output level. The 500A250D is protected from RF input overdrive by an RF input leveling circuit which controls the RF input level to (read more)
Browse RF Amplifiers Datasheets for AR RF/Microwave Instrumentation -
The Model 100A400AM20 is a solid-state, self -contained, air-cooled, broadband amplifier designed for applications requiring RF power down to 4kHz, such as MIL STD 461 and the CS114 test standard along with any application where instantaneous bandwidth, high gain, and linearity are required (read more)
Browse RF Amplifiers Datasheets for AR RF/Microwave Instrumentation -
Our New "U" Series Has The Widest Bandwidth In The Industry - And So Many Applications, It's Universal With the broadest frequency range (each covering 10kHz - 1000MHz) and a wide spectrum of power from 1-25 watts, our new "U" Series amplifiers are ideal for multiple (read more)
Browse RF Amplifiers Datasheets for AR RF/Microwave Instrumentation -
. Key Features 50 MHz to 3300 MHz Operation Low Power Consumption 5 V, 90 mA Gain; 17.5 dB over the entire BW Noise Figure; 1.5 dB Typical P1dB; 20 dBm OIP3; 34 dBm Adjustable Bias Using External Resistors (read more)
Browse RF Amplifiers Datasheets for Qorvo -
Pasternack offers a comprehensive selection of 18 new high power, class AB amplifiers that cover frequency bands from 20 MHz to 18 GHz that feature saturated output power levels ranging from 10 Watts to 200 Watts and power gain up to 53 dB. Designs operate in a 50 Ohm environment and (read more)
Browse Datasheets for Pasternack -
GS61004B E-HEMTs in a 50W 6.78MHz class EF2 power amplifier. Key features of the GSWP050W-EVBPA: (read more)
Browse Power Amplifiers Datasheets for Richardson RFPD -
class AB broadband high power amplifiers consists of 18 new models spanning frequency bands from 20 MHz to 18 GHz. These designs are unconditionally stable and operate in a 50 Ohm environment. They offer power gain up to 53 dB and saturated output power levels from 10 Watts to 200 Watts. This (read more)
Browse Datasheets for Fairview Microwave Inc. -
GaN Systems 300W, 6.78 MHz Class EF2 Power Amplifier For Wireless Power Transfer available from Richardson RFPD. The GSWP300W-EVBPA evaluation board is designed to support and expedite the innovation (read more)
Browse Power Amplifiers Datasheets for Richardson RFPD
More Information Top
Indicates content that may require registration and/or purchase.
-
The design of 433 MHz class AB CMOS power amplifier
433 MHz Power Amplifier (PA) which is designed in a .
-
An RF Power Amplifier in a Digital CMOS Process
Yoo, S.-J., Ahn, H. J., Hella, M. M. and Ismail, M., “The design of 433 MHz class AB CMOS power amplifier ,” in Proc. of 2000 Southwest Symposium on Mixed Signal Design, pp. 26–40.
-
RF CMOS Power Amplifiers: Theory, Design and Implementation
[55] S. Yoo, H. Ahn, M. Hella, and M. Ismail, “The design of 433 MHz class AB CMOS power amplifier ,” in 2000 Southwest Symposium on Mixed Signal Design, pp. 26–40, Sept. 2000.
-
A Fully Integrated CMOS Power Amplifier Using Superharmonic Injection-Locking for Short-Range Applications
This paper presents two fully integrated, differential superharmonic injection-locked power amplifiers (ILPA) operating at 433 MHz and 2.4 GHz.
-
A Low Power Light Weight Wireless Multichannel Microsystem for Reliable Neural Recording
… is fabricated in a 0.5 m 2P3M n-well standard CMOS process; and integrates a low-noise front-end, programmable digital controller, an RF modulator, and an RF power amplifier at the ISM band of 433 MHz on a single-chip.
-
A 1.2 V, 430 MHz, 4 dBm power amplifier and a 25 /spl mu/W front-end, using a standard digital CMOS process
A RF front-end and a power - amplifier (PA) designed for the 433 MHz European ISM band are presented.
-
A linearization technique for CMOS RF power amplifier with programmable output
A Class AB power amplifier incorporating this technique is designed at 433MHz with programmable output power level.
-
Wireless power transfer, sensor positioning, and power monitoring
It consists of a 433MHz oscillator, radio frequency amplifier to boost the power , and a directional Yagi-Uda antenna.
-
A reconfigurable multi-mode multi-band transmitter with integrated frequency synthesizer for short-range wireless communication
A two-stage dual-band power amplifier (PA) is also integrated into the chip for 433 , 868/915 MHz band applica- tions.
-
Telemetric chain link force measurement in coal mining armored face conveyors
433 MHz ISM band transceiver module After converting to suitable power levels by an amplifier stage, the microcontroller digitizes the analogue signal (10 bit analogue-to-digital conversion).