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Supplier: First Sensor AG
Description: The Series 8r offers high sensitivities in the red and green wavelength range and is optimized for 650 nm. The new photodiodes are ideal for applications which demand fast rise times and low capacitance such as laser distance meters (LDM), laser rangefinders (LRF), high speed
- Active Area Diameter or Length: 0.2300 mm
- Dark Current: 0.2000 to 0.5000 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Package / Mounting: Other
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Supplier: DigiKey
Description: Photodiode 650nm 200ps 6-CLCC
- Active Area Diameter or Length: 0.2300 mm
- Dark Current: 2.5 nA
- Operating Temperature: -20 to 60 C
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: Hamamatsu Photonics
Description: High-speed detector with plastic package The S10783 is a high-speed APC (auto power control) detector developed for monitoring laser diodes with a peak wavelength of 660 nm or 780 nm. Features - High-speed response: 300 MHz typ. (?=650 nm, VR=2.5 V), 250 MHz typ. (?=780
- Active Area Diameter or Length: 0.8000 mm
- Active Area Height: 0.8000 mm
- Dark Current: 1 nA
- Photodiode Material: Silicon
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Supplier: Hamamatsu Photonics
Description: High-speed detector with plastic package The S10784 is a high-speed APC (auto power control) detector developed for monitoring laser diodes with a peak wavelength of 660 nm or 780 nm. Features - High-speed response: 300 MHz typ. (?=650 nm, VR=2.5 V), 250 MHz typ. (?=780
- Active Area Diameter or Length: 3 mm
- Active Area Height: 3 mm
- Dark Current: 1 nA
- Photodiode Material: Silicon
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Supplier: OSI Optoelectronics
Description: Interconnects Product Features High Speed High Responsivity AR Coated Elements Wraparound Ceramic Sub mount Spectral Range 650nm to 860nm
- Active Area Diameter or Length: 0.0700 mm
- Dark Current: 0.0300 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: conditions for high speed signal amplification. Low capacitance, low dark current and high responsivity from 650nm to 860nm make these devices ideal for high-bit rate receivers used in LAN, MAN, and other high speed communication systems. TO packages come standard with a lensed
- Active Area Diameter or Length: 0.1000 mm
- Operating Temperature: 0.0 to 75 C
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Other
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Supplier: Hamamatsu Photonics
Description: achieved. Features - Suitable for lead-free solder re?ow - Surface mount type, small and thin leadless package - Operating/storage temperature: -40 to +125 °C - Photosensitive area: ?1.5 mm - High-speed response: 230 MHz (VR=3 V, RL=50 O, ?=650 nm, -3 dB)
- Active Area Diameter or Length: 1.5 mm
- Active Area Height: 1.5 mm
- Dark Current: 1 nA
- Photodiode Material: Silicon
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Supplier: Hamamatsu Photonics
Description: - High-speed response: 300 MHz typ. (?=650 nm, VR=2.5 V), 250 MHz typ. (?=780 nm, VR=2.5 V) - High sensitivity: 0.46 A/W typ. (?=660 nm) - Surface mount type leadless package - Lead-free reflow soldering
- Active Area Diameter or Length: 0.7900 mm
- Active Area Height: 0.7900 mm
- Dark Current: 1 nA
- Photodiode Material: Silicon
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Supplier: ODG (Origin Data Global)
Description: SENSOR PHOTODIODE 650NM 6CLCC
- Technology: Optical Linear Encoder
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Supplier: Acme Chip Technology Co., Limited
Description: SENSOR PHOTODIODE 650NM 6CLCC
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Supplier: RS Components, Ltd.
Description: Peak Sensitivity = 560nm Package Type = Top LED Mounting Type = Surface Mount Number of Pins = 2 Minimum Wavelength Detected = 480nm Maximum Wavelength Detected = 650nm Polarity = Reverse Delivery on production packaging - Reel. This product is non-returnable.
- Photodiode Package / Mounting: Other
- Spectral Response: Visible
- Spectral Response Range: 480 to 650 nm
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Supplier: RS Components, Ltd.
Description: Peak Sensitivity = 560nm Package Type = Top LED Mounting Type = Surface Mount Number of Pins = 2 Minimum Wavelength Detected = 480nm Maximum Wavelength Detected = 650nm Polarity = Reverse
- Photodiode Package / Mounting: Other
- Spectral Response: Visible
- Spectral Response Range: 480 to 650 nm
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Supplier: Broadcom Inc.
Description: The SFH250V is a low-cost 650nm receiver diode for simple optical data transmission with polymer optical fiber. It incorporates an analog photodiode and can be used for speeds up to 100MBd. The V-housing allows easy coupling of unconnectorized 2.2mm plastic optical fiber by
- Connector Type: Other
- Data Rate: 100 Mbps
- Operating Temperature: -40 to 185 F
- Photodiode Semiconductor: Silicon (400nm to 1100nm)
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Supplier: Broadcom Inc.
Description: The SFH250 is a low-cost 650nm receiver diode for simple optical data transmission with polymer optical fiber. It incorporates an analog photodiode and can be used for speeds up to 100MBd. The transparent plastic package has an aperture where the the 2.2mm fiber end can be
- Connector Type: Other
- Data Rate: 100 Mbps
- Operating Temperature: -40 to 185 F
- Photodiode Semiconductor: Silicon (400nm to 1100nm)
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Supplier: Broadcom Inc.
Description: The AFBR-16xxZ transmitter utilizes a 650 nm LED source with integrated optics and driver IC for efficient coupling into 1 mm Polymer Optical Fiber (POF). The AFBR- 26x4Z/25x9Z receiver consists of an IC with an integrated photodiode to produce a logic compatible output. The
- Connector Type: Other
- Light Source: LED
- Maximum Optical Output Power: -50 to 2 dBm
- Operating Temperature: -40 to 185 F
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Supplier: RS Components, Ltd.
Description: housing is auto-insertable and wave solderable. With an extended temperature range of -40 to 85°C and a 650nm light emitting diode (LED) and Si detectors, the SFH series offers high reliability and excellent linearity, with no requirement for fibre stripping. . A variety of
- Connector Type: Other
- Receiver Rise Time: 10 ns
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Supplier: RS Components, Ltd.
Description: housing is auto-insertable and wave solderable. With an extended temperature range of -40 to 85°C and a 650nm light emitting diode (LED) and Si detectors, the SFH series offers high reliability and excellent linearity, with no requirement for fibre stripping. . A variety of
- Connector Type: Other
- Receiver Rise Time: 10 ns
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Supplier: DigiKey
Description: Photodiode 940nm 6ns 2-SMD, Gull Wing
- Dark Current: 10 nA
- Operating Temperature: -25 to 85 C
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Package / Mounting: Surface Mount Technology (SMT)
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Supplier: DigiKey
Description: Photodiode 420nm 110ps 8-WBGA
- Dark Current: 1900 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Package / Mounting: Surface Mount Technology (SMT)
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Supplier: DigiKey
Description: Photodiode 900nm 5ns TO-18-2 Metal Can
- Dark Current: 10 nA
- Operating Temperature: -40 to 80 C
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Package / Mounting: Through Hole Technology (THT), Other
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Supplier: Universal Semiconductor, Inc.
Description: Linear type, diffused junction technology
- Active Area Diameter or Length: 30 mm
- Active Area Height: 4 mm
- Dark Current: 3000 nA
- Noise Equivalent Power (NEP): 3.75 W/Hz½
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 170V 940nm 400nm~1100nm 5nA Plugin,D=5mm Photodiodes ROHS
- Dark Current: 5 nA
- Operating Temperature: -25 to 85 C
- Spectral Response Range: 400 to 1100 nm
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Supplier: OSRAM Opto Semiconductors
Description: PIN Photodiode with Enhanced Blue Sensitivity in DIL Plastic Package
- Active Area Diameter or Length: Over 2.73 mm
- Active Area Height: Over 2.73 mm
- Photodiode Package / Mounting: Surface Mount Technology (SMT)
- Spectral Response: IR
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Supplier: Marktech Optoelectronics
Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm
- Active Area Diameter or Length: 0.2000 mm
- Active Area Height: 230 mm
- Dark Current: 0.2000 nA
- Operating Temperature: -20 to 85 C
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Supplier: Newport MKS
Description: The 819-SL-1.5-800PS multifunctional integrating sphere provides multiple measurement capabilities in a single integrating sphere device: a) a precision photodiode for calibrated average power measurement, b) a fast photodiode for pulse shape characterization on an oscilloscope and a
- Spectral Response Range: 400 to 1100 nm
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Supplier: Electro Optical Components, Inc.
Description: Quadrant photodiodes are used for a variety of alignment applications including laser beams and position sensing. They are available in 2.5, 5.0 and 7.9 mm diameter active areas. Quadrant Photodetector Features Si-PIN photodiode Spectral range 400 – 1100
- Active Area Diameter or Length: 2.5 to 7.9 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
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Supplier: Ophir-Spiricon Inc.
Description: Automatic dynamic cancellation of up to 98% of background light
- Active Area Diameter or Length: 10 mm
- Active Area Height: 10 mm
- Rise Time: 2.00E8 ns
- Spectral Response: UV, Visible, IR
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Supplier: Micropac Industries, Inc.
Description: The 61055 is an N-P-N Planar Silicon Transistor in a package designed to be mounted in a double-clad printed circuit board. It is available in a range of sensitivities and is lensed for minimum response to stray light. High sensitivity, low dark current leakage, and low saturation voltage make this
- Dark Current: 25 nA
- Operating Temperature: -55 to 125 C
- PN, PIN, or Avalanche: PN Photodiode, PIN Photodiode
- PSD: Yes
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Supplier: Photonique SA
Description: UV & blue light solidstate photon detector/counter; 2mm sensor pitch
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Array: Yes
- Dark Current: 10000 nA
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Supplier: PREMA Semiconductor GmbH
Description: With minimal size, the PR5001 is a dual photo diode with a wideband spectral sensitivity (450-950 nm) with peak at 800 nm. An active area of two times 0.75 mm x 1.2 mm is packaged in a small transparent DFN package with a size of only 1.8 mm x 2.9 mm. The silicon photo diodes have
- Dark Current: 0.0100 nA
- Operating Temperature: -20 to 85 C
- PN, PIN, or Avalanche: PN Photodiode
- Photodiode Material: Silicon
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Active Area Diameter or Length: 3.9 to 4.4 mm
- Dark Current: 5 nA
- Operating Temperature: -25 to 85 C
- Photodiode Package / Mounting: Surface Mount Technology (SMT)
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EU project POF-PLUS: Gigabit transmission over 50 m of step-index plastic optical fibre for home networking
Fig. 2 Bandwidth measurement of the transmission link including 50 m SI-POF, the 650 nm photodiode and either the VCSEL or the RCLED.
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Integrated photodiodes in standard CMOS technology for CD and DVD applications
For deeper nwells (related to the technology), and for lower wavelengths (X< 650 nm ), photodiode geometry will certainly become important because of the smaller contribution of slow substrate current.
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Study on Determination of Six Transition Metal Ions in Biological Samples by SPE and RP‐HPLC
A tridimensional chromatogram was recorded from 450~ 650 nm with photodiode array detec- tor and the chromatogram of 590 nm is shown in Fig. 1.
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Study on the Determination of Cobalt, Nickel, Copper, Zinc and Vanadium in Environmental Samples by a Rapid High‐Performance Liquid Chromatography
A tridimensional (X axis: re- tention time, Y axis: wavelength, Z axis: absorbance) chro- matogram was recorded from 450~ 650 nm with photodiode array detector, and the chromatogram of 550 nm is shown in Fig. 4.
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pn photodiode in 0.35‐μm high-voltage CMOS with 1.2-GHz bandwidth
… 0.35‐μm digital CMOS technology.7 In 0.15‐μm CMOS, a vertical pin photodiode achieved a bandwidth of 1.2 GHz and a responsivity of 0.39 A∕W at −8 V reverse voltage for 650 nm .8 Photodiodes in nanometer CMOS possess …
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Journal of the Brazilian Chemical Society - Study on the determination of lead, cadmium, mercury, nickel and zinc by a rapid column high-performance liquid chr...
A tridimensional (X axis: retention time, Y axis: wavelength, Z axis: absorbance) chromatogram was recorded from 450~ 650 nm with photodiode array detector and the chromatogram of 555 nm was shown in Figure 4.
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Journal of the Brazilian Chemical Society - Simultaneous determination of palladium, platinum and rhodium by on-line column enrichment and HPLC with 2,4-dihydr...
A three-dimensional (X axis: retention time, Y axis: wavelength, Z axis: absorbance) chromatogram was recorded from 400~ 650 nm with photodiode array detector and the chromatogram of 515 nm is shown in Figure 2.
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Longitudinal-field GaAs/AlGaAs semi-insulating multiple quantum wells photorefractive devices
The changes of the transmitted signal are detected using a silicon photodiode with 650nm long pass filters, and recorded as a function of time on a digital storage oscilloscope.
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Integrated Silicon Optoelectronics
In order to avoid slow diffusion of photogenerated carriers from the substrate for 780 and 650 nm , the photodiode formed by the N- epitaxial layer and the shallow P (SP) implant was used.
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Laser Ignition of Various Pyrotechnic Mixtures – an Experimental Study
The time dependent behav- ior of the combustion products was recorded using a high acquisition rate (about 1 sample per ms) CCD spectrometer (200– 650 nm ), a photodiode fitted with a narrowband filter (540–560 nm), and a high-speed pressure transducer.