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Supplier: Newark, An Avnet Company
Description: PHOTODIODE, 650NM, DIP-8; No. of Pins:8Pins; Diode Case Style:DIP; Wavelength of Peak Sensitivity:650nm; Spectral Sensitivity @ Peak:865mV/µW/cm2; Operating Temperature Min:-25°C; Operating Temperature Max:85°C; Product Range:-; RoHS Compliant: Yes
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Supplier: First Sensor AG
Description: The Series 8r offers high sensitivities in the red and green wavelength range and is optimized for 650 nm. The new photodiodes are ideal for applications which demand fast rise times and low capacitance such as laser distance meters (LDM), laser rangefinders (LRF), high speed
- Spectral Response Range: 650 nm
- Active Area Diameter or Length: 0.23 mm
- Rise Time: 0.18 ns
- Dark Current: 0.2 to 0.5 nA
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Supplier: DigiKey
Description: Photodiode 650nm 200ps 6-CLCC
- Sensitivity: 35 A/W
- Spectral Response Range: 500 to 1,000 nm
- Active Area Diameter or Length: 0.23 mm
- Rise Time: 0.2 ns
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Supplier: Hamamatsu Photonics Europe
Description: High-speed detector with plastic package The S10784 is a high-speed APC (auto power control) detector developed for monitoring laser diodes with a peak wavelength of 660 nm or 780 nm. Features - High-speed response: 300 MHz typ. (λ=650 nm, VR=2.5 V), 250 MHz typ. (λ=780
- Sensitivity: 0.51 A/W
- Spectral Response Range: 340 to 1,040 nm
- Active Area Diameter or Length: 3 mm
- Active Area Height: 3 mm
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Supplier: ODG (Origin Data Global)
Description: SENSOR PHOTODIODE 650NM 6CLCC
- Sensor Technology: Optical Linear Encoder
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Supplier: OSI Optoelectronics
Description: The FCI-GaAs-XXm is a 4 or 12 element GaAs PIN photodetector array designed for high speed fiber receiver and monitoring applications. The 70µm diameter elements are capable of 2.5Gbps data rates. AR coated and sensitive to telecommunication wavelengths, this array is a perfect receiver for SM or
- Sensitivity: 0.63 A/W
- Spectral Response Range: 1,100 to 1,650 nm
- Active Area Diameter or Length: 0.07 mm
- Operating Temperature: -40 to 85 C
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Supplier: Acme Chip Technology Co., Limited
Description: SENSOR PHOTODIODE 650NM 6CLCC
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Supplier: Newark, An Avnet Company
Description: PHOTODIODE; No. of Pins:8Pins; Diode Case Style:TO-99; Wavelength of Peak Sensitivity:650nm; Spectral Sensitivity @ Peak:-; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:-; SVHC:No SVHC (15-Jan-2019);RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: SILICON AVALANCHE PHOTODIODE, LCC-6; No. of Pins:6Pins; Diode Case Style:LCC; Wavelength of Peak Sensitivity:650nm; Angle of Half Sensitivity ±:-; Dark Current:2500pA; Operating Temperature Min:-20°C; Operating Temperature Max:60°C RoHS Compliant: Yes
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Supplier: RS Components, Ltd.
Description: 650nm Receiver Photodiode, Optical fibre
- Data Rate: 100 Mbps
- Receiver Rise Time: 10 ns
- Features: Other
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Supplier: Hamamatsu Photonics Europe
Description: Features - Peak sensitivity wavelength: 840 nm (gain=100) - Low bias operation: Breakdown voltage=200 V max. - High-speed response: Cutoff frequency=650 MHz typ. (S12426-02, λ=900 nm, M=100)
- Sensitivity: 0.52 A/W
- Spectral Response Range: 400 to 1,100 nm
- Active Area Diameter or Length: 0.20000000000000004 mm
- Active Area Height: 0.20000000000000004 mm
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Supplier: Hamamatsu Photonics Europe
Description: For 150 Mbps optical link tramsmitter photo IC This photo IC is capable of data communication at a data rate of 150 Mbps through a plastic optical fiber (POF). Its transmitter is composed of a 650 nm RC (resonant cavity) type LED, which is suitable for POF communications, and a driver
- Operating Temperature: -40 to 95 C
- Photodiode Type: PIN Photodiode
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Supplier: Broadcom Inc.
Description: The SFH250V is a low-cost 650nm receiver diode for simple optical data transmission with polymer optical fiber. It incorporates an analog photodiode and can be used for speeds up to 100MBd. The V-housing allows easy coupling of unconnectorized 2.2mm plastic optical fiber by means of an axial
- Data Rate: 100 Mbps
- Operating Temperature: -40 to 185 F
- Features: Other
- Photodiode Semiconductor: Silicon (400nm to 1100nm)
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Supplier: Broadcom Inc.
Description: The SFH250 is a low-cost 650nm receiver diode for simple optical data transmission with polymer optical fiber. It incorporates an analog photodiode and can be used for speeds up to 100MBd. The transparent plastic package has an aperture where the the 2.2mm fiber end can be inserted and fixed
- Data Rate: 100 Mbps
- Operating Temperature: -40 to 185 F
- Features: Other
- Photodiode Semiconductor: Silicon (400nm to 1100nm)
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Supplier: World Star Tech
Description: Features: Wavelength: 647–650 nm (typical) Optical Output Power: 150 mW (CW) Operating Current: 280–350 mA Operating Voltage: 2.6–3.0 V Threshold Current: 110–140 mA Beam Divergence: Parallel to junction: 6–13° (FWHM); Perpendicular to junction: 13–22° (FWHM) Monitor Photodiode:
- Wavelength Range: 648 nm
- Laser Power: 150 milliwatts
- Operating Temperature Range: -10 to 40 C
- Laser Type: Laser Diode Modules, Laser Diodes
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Supplier: Broadcom Inc.
Description: The AFBR-16xxZ transmitter utilizes a 650 nm LED source with integrated optics and driver IC for efficient coupling into 1 mm Polymer Optical Fiber (POF). The AFBR- 26x4Z/25x9Z receiver consists of an IC with an integrated photodiode to produce a logic compatible output. The
- Transmitter Rise Time: 5 ns
- Wavelength: 630 to 685 nm
- Maximum Optical Output Power: -50 to 2.0000000000000004 dBm
- Operating Temperature: -40 to 185 F
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Photodiodes - Integrating Sphere Detector, Collimated Beam, 5.3 in., 400-1100 nm -- 819C-SL-5.3-CAL2Supplier: Newport MKS
Description: The 819C-SL-5.3-CAL2 is a NIST traceable calibrated integrating sphere detector using a 5.3 inch integrating sphere with a high performance silicon photodetector. The input port size is 1.0 in. diameter and the wavelength range is 400 – 1100 nm. It comes with an SMA fiber optic connector on
- Spectral Response Range: 400 to 1,100 nm
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Supplier: Newport MKS
Description: The 819D-SL-3.3-CAL2 is a NIST traceable calibrated integrating sphere detector using a 3.3 inch integrating sphere with a high performance silicon photodetector. The input port size is 0.5 in. diameter and the wavelength range is 400 – 1100 nm. It comes with an SMA fiber optic connector on
- Spectral Response Range: 400 to 1,100 nm
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Supplier: RS Components, Ltd.
Description: Vishay TEMD5010X01 Photodiode
- Spectral Response Range: 430 to 1,100 nm
- Photodiode Spectral Response: IR, Visible
- Features: Other
- Photodiode Material: Silicon
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Supplier: Electro Optical Components, Inc.
Description: Quadrant photodiodes are used for a variety of alignment applications including laser beams and position sensing. They are available in 2.5, 5.0 and 7.9 mm diameter active areas. Quadrant Photodetector Features Si-PIN photodiode Spectral range 400 – 1100 nm Hermetic sealed in
- Spectral Response Range: 400 to 1,100 nm
- Active Area Diameter or Length: 2.5000000000000004 to 7.900000000000001 mm
- Photodiode Spectral Response: IR, Visible
- Photodiode Package: Leaded, Through Hole Technology (THT)
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Supplier: Electro Optical Components, Inc.
Description: EOC offers a variety of silicon photodiode options from IFW Optronics: Silicon Photodiodes with an Integrated Low Noise JFET Amplifier Quadrant Photodiodes
- Spectral Response Range: 400 to 1,100 nm
- Active Area Diameter or Length: 2.5000000000000004 to 7.900000000000001 mm
- Photodiode Spectral Response: IR, Visible
- Photodiode Package: Leaded, Through Hole Technology (THT)
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Supplier: Newport MKS
Description: The 819D-SL-2-CAL2V2 is a NIST traceable calibrated integrating sphere detector using a 2 inch integrating sphere with a high performance silicon photodetector. The input port size is 0.5 in. diameter and the wavelength range is 400 – 1100 nm, with maximum power of 0.3 watts with benchtop
- Spectral Response Range: 400 to 1,100 nm
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Photodiodes - Integrating Sphere Detector, Collimated Beam, 3.3 in., 400-1100 nm -- 819C-SL-3.3-CAL2Supplier: Newport MKS
Description: The 819C-SL-3.3-CAL2 is a NIST traceable calibrated integrating sphere detector using a 3.3 inch integrating sphere with a high performance silicon photodetector. The input port size is 1.0 in. diameter and the wavelength range is 400-1100 nm. It comes with an SMA fiber optic connector on the
- Spectral Response Range: 400 to 1,100 nm
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Supplier: OSI Optoelectronics
Description: for very accurate nulling or centering applications. Position information can be obtained when the light spot diameter is larger than the spacing between the cells. Spectral response range is from 350 - 100 nm. Notch or bandpass filters can be added to achieve specific spectral responses.
- Sensitivity: 0.65 A/W
- Spectral Response Range: 350 to 1,100 nm
- Active Area Diameter or Length: 10.000000000000002 mm
- Rise Time: 3 ns
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Supplier: Universal Semiconductor, Inc.
Description: Dual axis type, diffused junction technology
- Spectral Response Range: 400 to 1,170 nm
- Active Area Diameter or Length: 11.280000000000001 mm
- Rise Time: 2,000 ns
- Dark Current: 2,000 nA
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Supplier: Ophir-Spiricon Inc.
Description: Automatic dynamic cancellation of up to 98% of background light
- Spectral Response Range: 200 to 1,100 nm
- Active Area Diameter or Length: 10.000000000000002 mm
- Active Area Height: 10.000000000000002 mm
- Rise Time: 200,000,000 ns
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 32V 920nm 420nm~1120nm 2nA SMD,3.7x6.2mm Photodiodes ROHS
- Spectral Response Range: 420 to 1,120 nm
- Operating Temperature: -40 to 100 C
- Dark Current: 2 nA
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Supplier: Allied Electronics, Inc.
Description: SILICON PHOTODIODES
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Supplier: Photonique SA
Description: No Description Provided
- Spectral Response Range: 350 to 950 nm
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Rise Time: 5 ns
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Supplier: First Sensor AG
Description: First Sensor offers large-area InGaAs PIN photodiodes with active sensor surfaces up to 3 mm in diameter. The diodes feature low dark currents and high sensitivity up to 1700 nm wavelength. A model enhanced for the visible wavelength range is also available. Housing options include
- Spectral Response Range: 600 to 1,700 nm
- Active Area Diameter or Length: 1 mm
- Rise Time: 15 ns
- Dark Current: 1 to 10 nA
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Supplier: OSRAM Opto Semiconductors
Description: Ambient light sensor with perfect V-lambda characteristic in Metal Can
- Spectral Response Range: 350 to 820 nm
- Active Area Diameter or Length: 2.7300000000000004 mm
- Active Area Height: 2.7300000000000004 mm
- Photodiode Package: Leaded
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Supplier: Micropac Industries, Inc.
Description: The 61058 is an N-P-N Planar Silicon phototransistor in a lensed TO-46 three-lead package. It is available in a range of sensitivities and is ideal for use wherever high response, low dark current leakage, and low saturation characteristics are required. Available custom binned to customer
- Sensitivity: 100 A/W
- Spectral Response Range: 290 to 1,200 nm
- Rise Time: 7,000 ns
- Operating Temperature: -55 to 125 C
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EU project POF-PLUS: Gigabit transmission over 50 m of step-index plastic optical fibre for home networking
Fig. 2 Bandwidth measurement of the transmission link including 50 m SI-POF, the 650 nm photodiode and either the VCSEL or the RCLED.
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Integrated photodiodes in standard CMOS technology for CD and DVD applications
For deeper nwells (related to the technology), and for lower wavelengths (X< 650 nm ), photodiode geometry will certainly become important because of the smaller contribution of slow substrate current.
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Study on Determination of Six Transition Metal Ions in Biological Samples by SPE and RP‐HPLC
A tridimensional chromatogram was recorded from 450~ 650 nm with photodiode array detec- tor and the chromatogram of 590 nm is shown in Fig. 1.
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Study on the Determination of Cobalt, Nickel, Copper, Zinc and Vanadium in Environmental Samples by a Rapid High‐Performance Liquid Chromatography
A tridimensional (X axis: re- tention time, Y axis: wavelength, Z axis: absorbance) chro- matogram was recorded from 450~ 650 nm with photodiode array detector, and the chromatogram of 550 nm is shown in Fig. 4.
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pn photodiode in 0.35‐μm high-voltage CMOS with 1.2-GHz bandwidth
… 0.35‐μm digital CMOS technology.7 In 0.15‐μm CMOS, a vertical pin photodiode achieved a bandwidth of 1.2 GHz and a responsivity of 0.39 A∕W at −8 V reverse voltage for 650 nm .8 Photodiodes in nanometer CMOS possess …
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Journal of the Brazilian Chemical Society - Study on the determination of lead, cadmium, mercury, nickel and zinc by a rapid column high-performance liquid chr...
A tridimensional (X axis: retention time, Y axis: wavelength, Z axis: absorbance) chromatogram was recorded from 450~ 650 nm with photodiode array detector and the chromatogram of 555 nm was shown in Figure 4.
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Journal of the Brazilian Chemical Society - Simultaneous determination of palladium, platinum and rhodium by on-line column enrichment and HPLC with 2,4-dihydr...
A three-dimensional (X axis: retention time, Y axis: wavelength, Z axis: absorbance) chromatogram was recorded from 400~ 650 nm with photodiode array detector and the chromatogram of 515 nm is shown in Figure 2.
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Longitudinal-field GaAs/AlGaAs semi-insulating multiple quantum wells photorefractive devices
The changes of the transmitted signal are detected using a silicon photodiode with 650nm long pass filters, and recorded as a function of time on a digital storage oscilloscope.
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Integrated Silicon Optoelectronics
In order to avoid slow diffusion of photogenerated carriers from the substrate for 780 and 650 nm , the photodiode formed by the N- epitaxial layer and the shallow P (SP) implant was used.
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Laser Ignition of Various Pyrotechnic Mixtures – an Experimental Study
The time dependent behav- ior of the combustion products was recorded using a high acquisition rate (about 1 sample per ms) CCD spectrometer (200– 650 nm ), a photodiode fitted with a narrowband filter (540–560 nm), and a high-speed pressure transducer.