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Supplier: Star SU LLC
Description: Star SU offers a wide variety of tungsten carbide blanks and preforms from H.B. Carbide. Using only the highest quality raw materials and employing state-of-the-art, computer controlled vacuum furnaces and vacuum Sinter-Hipping furnaces, these cemented carbide preforms can be
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Supplier: Plansee SE
Description: During hot isostatic pressing (HIP), materials are sintered, combined and compacted at temperatures of approximately 1 450 °C (2642°F) and gas pressures of up to 200 MPa. System components inside the pressure vessel not only have to be large; they must also be heat-resistant and be able to
- Process Temperature: 2,800 C
- Pressure Range: 29,007.3678714394 psi
- Application: Firing / Sintering, Heat Treating
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Supplier: Star SU LLC
Description: Die and bushing blanks are available in multiple grades for die nibs, drill bushings, valve trim, chokes and more. Minimal grind stock available Competitive lead times Technical assistance with grade application Blanket order options Sinter Hip available
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
- Features: MOSFET
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Supplier: General Carbide Corporation
Description: concentricity. When ordering, specify the angle, ID, bearing and grade you require, and we'll meet your specs. General Carbide manufactures more than 50 different grades of carbide and all parts manufactured are sinter-HIP'ed to ensure production of the highest quality material.
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Supplier: General Carbide Corporation
Description: General Carbide supplies Rotary Cutting Die, with tungsten carbide tooling for rotary knives and anvils to meet your unique cutting requirements. We can produce tools up to 330mm(13") diameter with common edge or segmented cutting edge designs. We also manufacture the unground tungsten
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Supplier: Kittyhawk Products
Description: manufacturing needs. HIP is a production process of unique benefit in the precision casting, powder metal, metal bonding and ceramic industries. Kittyhawk Products offers the services of a wide range of vessels on a sub-contract basis. This concentration of high capital investment and
- Operating Pressure: 1,000 to 15,000 psi
- Operating Temperature: 400 to 2,250 F
- Chamber Diameter: 18 to 46 inch
- Chamber Height: 60 to 84 inch
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Supplier: PSM Industries
Description: High Volume Experience Ferro-Tic SBC ~ Steel Bonded Titanium Carbide ~ Newburgh, New York Ferro-Tic® Machineable Carbides Severe Wear Applications Hot Isostatic Pressed Materials Yillik Carbide Products ~ Precision Cemented Carbides ~ Ontario, California Wide Variety
- Density Ratio: < 85% T.D., 85% to 90% T.D., 90% to 99% T.D., Fully Dense, Open Porosity Material
- Services Offered: Assembly Services, Design Assistance, Heat-treating, High Volume Production, Oil Impregnating, Prototype / Short Run, Resin / Plastic Impregnating, Secondary Machining, Sinter Brazing, Sinter Hardening, Tool / Mold Making
- Material Type: Brass / Bronze, Composite, Copper, Nickel Alloy, Stainless Steel, Steel
- Forming Process: HIP, Mechanical Pressing, Metal Injection Molding (MIM), Sintering
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Supplier: General Carbide Corporation
Description: We are a global supplier of superior tungsten carbide rods. Our advanced pressing and shaping systems give us the flexibility to offer numerous grades and sizes of rods, all of which are sinter-HIP'ed to supply porosity-free materials with maximum mechanical strength properties. We
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Supplier: CoorsTek
Description: CoorsTek Hot Isostatically Pressed (HIPped) zirconia materials are the industry standard for ceramic necking dies and knockouts, outperforming tungsten carbide in several ways. The sub-micron grain size enables an excellent polish for low-friction, voiding wrinkling, puckering, and splitting
- Shape / Form: Fabricated / Custom Shape
- Features: Specialty Ceramic
- Applications: Wear Parts / Tooling
- Specialty Ceramic Type: Zirconia
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package Product overview: SCT20N120 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful
- Features: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package Product overview: SCT20N120AG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power
- Features: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package Product overview: SCT1000N170 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful
- Features: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package Product overview: SCT50N120 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful
- Features: MOSFET
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Supplier: Synertech PM Inc.
Description: The leader in development and manufacturing of Powdered Metal Products via Hot Isostatic Pressing Synertech P/M, Inc. has the technical expertise in PM and HIP to research, develop and produse the highest quality products in a cost effective and timely manner. Synertech P/M, Inc. was
- Cladding / Overlay Material: Carbide / Hardmetal, Copper / Copper Alloy, Nickel / Nickel Alloy, Refractory Metal, Steel - High Carbon / Alloy, Steel - Stainless, Steel - Tool, Titanium Alloy
- Surfacing Process: Diffusion Bonding, Hardfacing
- Features: North America, Southwest US Only, United States Only
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1091914-SCT1000N170 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 600 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1700 V Current - Continuous Drain (Id) @
- Polarity: N-Channel
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Status: Active Package / Case: TO-247-3 Supplier Device Package: HiP247™ Long Leads Base Product Number: SCTWA30 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds
- QG: 105 nC
- PD: 270,000 milliwatts
- TJ: -55 to 200 C
- Features: MOSFET, Power MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 763124-SCT30N120 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 200°C (TJ) Package: TO-247-3 Technology: SiCFET (Silicon Carbide) Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Family Name: SCT30N120
- PD: 270,000 milliwatts
- TJ: -55 to 200 C
- Features: MOSFET, Other
- Package Type: SOT3, TO-247
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Supplier: ASTM International
Description: contain the engineering data obtained from these test specimens. 1.4 These practices are not applicable to metal powder test specimens that are produced by other processes such as cold isostatic pressing (CIP), hot isostatic pressing (HIP), powder forging (PF) or metal injection molding
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Supplier: ASTM International
Description: that contain the engineering data obtained from these test specimens. 1.4 These practices are not applicable to metal powder test specimens that are produced by other processes such as cold isostatic pressing (CIP), hot isostatic pressing (HIP), powder forging (P/F) or metal injection molding
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Supplier: Plansee SE
Description: allowed to build up, the target material is removed unevenly and droplets form on the surface of the tool coating. But because our targets keep their cool, a smoother coating is guaranteed. Our optimum microstructure. Your perfect coating. Coarse or fine metal powder? Forging, HIP or other
- Type: Sputtering Target
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Supplier: Plansee SE
Description: provide at the edge of the target. In these products, our aluminium heat sinks are directly connected to the target material. You can also take a look at our targets and cathodes made from aluminium-chromium, chromium, titanium, zirconium, titanium-silicon, tungsten carbide and tungsten
- Type: Sputtering Target
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Supplier: Plansee SE
Description: Even at the highest temperatures, our hot zones don't feel the heat. They are designed for temperatures between 1 000°C (1 832°F) and 2800°C (5072°F). We are experts in the field of thermal processes: whether in high vacuum, protective gas atmospheres or during hot isostatic pressing (HIP).
- Process Temperature: 1,000 to 2,800 C
- Atmosphere: Air / Oxidizing, Inert, Vacuum
- Application: Annealing, Brazing / Soldering, Firing / Sintering, Heat Treating
- Features: Industrial
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biological, similar to human hip bones forming the outside of the bike’s fuel tank. Wireless Future Many devices are designed to be “wireless,” like Bluetooth. This will be for product replacement sales or product design improvement data (read more)
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New Products & Processes
~ 45 Low"Pressure HIP: Low-pressure hot isostatic pressure systems for cemented tungsten carbides are designed to dewax, sinter, and HIP carbide parts at low pressures found to be effective in improving density, reducing porosity, and possibly improving transverse rupture strength of…
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Powder metallurgy T15 tool steel: Part II. Microstructure and properties after heat treatment
Volume fractions of MC and M6C carbides after hip- ping and after hipping, anstenitizing, and quenching are compared in Figures 2(a) and (b).
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Engineering ceramics
SiC whisker-silicon carbide , hipped , 229 .
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Hot isostatically pressed tool steels: mechanical and physical properties
Evidently the general heat treating response for PM tool steels is identical to that of conventional tool steels of equal composition with the only restriction that the very fine carbides in HIP tool steels dissolve faster than the segregated coarse carbides in…
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Strength improvement of cemented carbides by hot isostatic pressing (HIP)
No investigations have been published up till now to determine which of the above two mechanisms is responsible for the increase in strength of cemented carbides by HIP , and neither has any attempt been made to in- terpret the mechanical behaviour of…
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PM into the 1990S
The results show that sinter/hip processing has the same effect on various cemented carbides as hipping except on low Co binder and fine WC cemented carbides.
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Study of Metallic Carbide (MC) in a Ni-Co-Cr-Based Powder Metallurgy Superalloy
carbide-forming elements.[1,8–10] Therefore, research on the decomposition mechanism of carbides during HIP is of importance to eliminate PPB in the PM superalloys.
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Microstructural and mechanical characterisation of composite materials consisting of M3/2 high speed steel reinforced with niobium carbides
The composite materials prepared by mechanical mixing of water atomised M3/2 steel powders with 5 and 8 vol.-% of high purity niobium carbide and hipped at 1150uC have a fine grained and homogeneous microstructure.
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Effect of high pressure on the structure and properties of materials based on boron carbide
Dependence of the Density* of Materials Based on Boron Carbide on HIP Schedules .
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Imaging and microanalysis of liquid phase sintered silicon-based ceramic microstructures
Figure 16 Elemental distribution images of a triple grain junction in a silicon carbide ceramic HIP :ed with the addition of 1.3 wt% Al2O3 and 1.7 wt% Y2O3.