Aluminum Oxide Wafer

Description: Safety Packaging Under None

• Type: OrganoMetallics

Description: Aluminum Oxide is a typical artifical abrasive having larger tenacity without impurities. It is characterized by its hardness, toughness and uniformity in size. Hardness Mohs Scale: 9.8 Specific Gravity: 3.9 Color: Light Brown / White Applications: Brass Parts, Valve Parts, Silicon

• Type / Shape: Abrasive Grain / Grit

Description: Wafers and blanks are produced from crystals grown using the Kyropoulos method. Advantages of our wafers: high material purity: > 99.997%; low impurity content Ti: < 1 ppm; low dislocation density: < 103 cm-2; orientation tolerance: up to ± 0.05 degrees. Sapphire wafers for

• Thickness / Wall Thickness: 0.005905515 to 0.0393701 inch
• Diameter: 2 to 10 inch
• Width / O.D.: 2 to 10 inch
• Features: Dielectric Ceramics / Materials

Description: A ceramic wafer chuck is a specialized tool employed in the semiconductor industry to hold wafers in a secure position. It functions as a stable platform that guarantees consistent contact and precise positioning of the wafer during many procedures, including lithography,

• Features: Alumina / Aluminum Oxide, Specialty Ceramic
• Applications: Chemical / Materials Processing, Electrical / HV Parts
• Specialty Ceramic Type: Silicon Carbide, Silicon Nitride, Tungsten Carbide (WC)
• Shape / Form: Wafer Carrier / Holder

Description: Ceramic wafer clamps are indispensible tools in semiconductor processing. They can be manufactured of high-purity alumina, zirconia, or silicon carbide, making them suited for high-temperature and corrosive environments.

• Features: Alumina / Aluminum Oxide, Specialty Ceramic
• Applications: Electrical / HV Parts
• Specialty Ceramic Type: Silicon Carbide, Tungsten Carbide (WC), Zirconia
• Shape / Form: Wafer Carrier / Holder

Description: End effectors, also referred to as semiconductor handling "blades", are the robot's hand to handle and move semiconductor wafers between positions. So end effectors must be dimensionally precise and thermally stable, while having a smooth, abrasion-resistant surface to safely handle

• Features: Alumina / Aluminum Oxide, Carbide Materials, Silica / Silicate Materials, Specialty Ceramic
• Specialty Ceramic Type: Aluminum Nitride, Quartz, Silicon Carbide, Yttria
• Applications: Chemical / Materials Processing, Wear Parts / Tooling
• Shape / Form: Wafer Carrier / Holder

Description: LITHOGRAPHY & WAFER INSPECTION COMPONENTS Resistant to chemical attack and thermally stable, our high-purity ceramic components are ideal for lithography processing, wafer handling (low contamination), and wafer inspection (extreme durability and hardness, dimensionally stable).

• Material Type: Alumina / Aluminum Oxide, Carbide Materials, Silicon Carbide
• Shape / Form: Fabricated / Custom Shape, Wafer Carrier / Holder
• Features: Other
• Applications: Wear Parts / Tooling

Description: While Gavish is NOT a provider of high volume commodity type substrates for LED’s and SOS applications, we are a producer of custom sapphire substrates and sapphire dummy wafers oriented and finished per customer specifications Specialty sapphire substrates for electronic applications 2 x 2 x

• Length: 2 inch
• Width / O.D.: 2 to 7.87402 inch
• Thickness / Wall Thickness: 0.01 to 0.02 inch
• Features: Dielectric Ceramics / Materials, Optics / Optical Grade

Description: Semiconductor Ceramic Arm handling 4", 6", 8" wafer This alumina ceramic arm is designed for handling 4", 6", 8" silicon wafer . Customer has requirements on the electrical conductivity as follows : 1. acceptance criteria: 1*10E4＜R＜1*10E9 Ω 2. reference acceptance scheme: Friction the

• Density: 3.8999975386044725 g/cc
• Material Type: Alumina / Aluminum Oxide

Description: the surfactant technology employed by AmberClean SWR is designed to cut through and remove aluminum oxide, diamond, silicon carbide and other process residues without harming delicate ceramic or silicon-based substrates. Features & Benefits Cleans slurries and other process residues

• Temperature (As Used): 150 F
• Concentration (As Used, by Volume): 1 to 5 %
• Type: Aerosol / Contact Cleaner, Alkaline Cleaner (11 to 12.5 pH), Aqueous / Water-based, Cleaner / Cleaning Agent
• Features: Biodegradable, VOC Compliant

Description: GRISH CO(Cerium Oxide) AO(Aluminum Oxide) SC(Silicon Carbide) slurry series are mainly made of processed high-quality abrasives. They provide predominant finishing result on optical material, substrates wafer, optical fiber connectors, crystal compounds, ceramics and hard

• Compound / Abrasive Type: Aluminum Oxide, Cerium Oxide, Silicon Carbide
• Grading System: Micron Graded
• Materials / Substrates Finished: Ophthalmic / Optical Materials, Semiconductors / Electronics (Wafers)
• Type: Polishing

Description: Innovacera’s 96 Alumina (Al₂O₃) Substrates combine high density, superior thermal conductivity, and excellent dielectric strength, making them an ideal choice for electronic and energy applications. With outstanding resistance to high temperature, acid, and alkali corrosion, these substrates ensure

• Material Type: Alumina / Aluminum Oxide
• Features: Other
• Shape / Form: Wafer / Substrate

Description: Aluminum Nitride (AlN) is a suitable material to utilize when high thermal conductivity and electrical insulation are required, making it perfect for use in thermal management and electrical applications. Furthermore, AlN is a popular alternative to Beryllium Oxide (BeO) in the

• Material Type: Aluminum Nitride

Description: Material High-purity aluminum oxide (Al₂O₃), silicon carbide (SiC), or silicon nitride (Si₃N₄). Advanced porous ceramic structure for uniform vacuum distribution. Features The porosity is high: An important feature of porous ceramics is that they have more uniform and controllable

• Diameter: 4 to 12 inch
• Materials: Ceramic
• Chuck Geometry: Round
• Chuck Type: Vacuum Chuck, Wafer Chuck

Description: Saint-Gobain Ceramic Materials' sub-micron polishing slurries are calcined aluminum oxide particles (99%+ purity) suspended in aqueous solutions, designed for use in electronics and industrial polishing applications. They are offered with only minimal additives and are intended as the

• Compound / Abrasive Type: Aluminum Oxide
• Type: Polishing
• Materials / Substrates Finished: Semiconductors / Electronics (Wafers)
• Form: Slurry

Description: High Precise & Fine Patterning Technology for Al2O3 and AlN Substrate High Grade Al2O3 Substrate

• Features: Alumina / Aluminum Oxide
• Applications: Electronics / RF-Microwave
• Shape / Form: Wafer / Substrate

Description: CoorsTek ceramics provide superior thermal performance in wafers, phosphors, and substrates for high-brightness LED manufacturing. Ceramic substrates Thick-Film Alumina Aluminum Nitride Ceramic phosphors Gallium nitride on silicon epiwafers MOCVD process equipment components

• Features: Alumina / Aluminum Oxide, Other, Specialty Ceramic
• Specialty Ceramic Type: Aluminum Nitride
• Applications: Thermal Insulation / Fire Proofing

Description: Saint-Gobain's e-powders are calcined aluminum oxide powders (99%+ purity), designed for use as a functional filler to enhance the properties of a product. In magnetic media applications, users report a reduced drop-out count due to the gentle, continuous cleaning action to the

• Compound / Abrasive Type: Aluminum Oxide
• Grading System: Micron Graded
• Type: Polishing
• Form: Powder

Description: Saint-Gobain Ceramic Materials' sub-micron E-Powders are calcined aluminum oxide powders (99%+ purity), designed for use as a functional filler to enhance the properties of a product. In Magnetic Media applications, users report a reduced drop-out count due to the gentle, continuous

• Compound / Abrasive Type: Aluminum Oxide
• Grading System: Micron Graded
• Type: Polishing
• Form: Powder

Description: The high-purity alumina cartridge diaphragm is exquisitely white in appearance and compact in size (22.5×17×1.5mm). Through modern ceramic manufacturing technology, it achieves more balanced mechanical properties, ensuring that the tonearm performs more stably and accurately. Using the traditional

• Features: Alumina / Aluminum Oxide, Other, Specialty Ceramic
• Shape / Form: Fabricated / Custom Shape, Wafer / Substrate

Description: Susceptors hold and heat semiconductor wafers during thermal processing. A susceptor is made of a material which absorbs energy by induction, conduction, and/or radiation and heats the wafer. Its thermal shock resistance, thermal conductivity, and purity are critical to rapid thermal

• Material Type: Alumina / Aluminum Oxide, Carbide Materials, Silicon Carbide
• Shape / Form: Fabricated / Custom Shape, Wafer Carrier / Holder
• Features: Graphite
• Applications: Wear Parts / Tooling

Description: Ceramic Focus Ring for Plasma Etch Equipment When aluminum alloy is selected as the chamber material of the etcher, it is easy to cause metal particle pollution. Instead, a dense anodic aluminum oxide layer is coated on the aluminum alloy to improve the corrosion

Description: TO-3P Ceramic heat sinks and thermal pads are designed to provide superior thermal performance in advanced thermal management solution such as high power applications, particularly for insulated-gate bipolar transistor (IGBT) modules. These heat sinks have advantages of heat dissipation, electrical

• Features: Other, Specialty / Other
• Shape / Form: Wafer / Substrate

Description: used on the photovaltaic equipment , a left and a right ceramic arm used in conjunction, their funtion is to handling the wafer by air suction and move it . The hole and air slot on the plate was cnc machined , and the top plate and bottom plate combined together to make the vacuum inbetween

• Density: 3.8999975386044725 g/cc
• Compressive / Crushing Strength: 377,095.7823287122 psi
• Material Type: Alumina / Aluminum Oxide

Description: Alumina Ceramic Focus rings are designed to improve etch uniformity around the wafer edge or perimeter. When used with an electrostatic chuck (e-chuck), the wafer rests on the edge focus ring – held in place by the electrostatic charge. Alumina Ceramic Focus Rings serve as critical

• Features: Alumina / Aluminum Oxide, Specialty Ceramic

Description: guide rail, silicon carbide slide rail, silicon carbide vacuum suction cup, silicon carbide reflector, silicon carbide crossbeam, silicon carbide workpiece table, etc. the main function is to carry the wafer to perform high-speed ultra-precision motion along the designated movement trajectory

• Length: 62.99216 inch
• Alumina / Aluminate Type: Alumina / Aluminum Oxide
• Features: Other, Silicon Carbide

Description: surface of the wafer. 1.4 This test method is especially useful for determining the surface metal areal densities in the native oxide or chemically grown oxide of polished silicon substrates after cleaning. 1.5 This test method is useful for sodium, aluminum, and

Description: cost in fabricated alumina shapes. With an excellent combination of properties and an attractive price, it is no surprise that fine grain technical grade alumina has a very wide range of applications. Alumina or aluminum oxide (Al2O3) in its various levels of purity is used more often

• Density: 3.5999977279425903 to 3.9399975133593905 g/cc
• Coeff. of Thermal Expansion (CTE): 8.2 to 8.4 µm/m-C
• MOR / Flexural Strength: 50,037.70957823296 to 54,968.96211637766 psi
• Compressive / Crushing Strength: 304,577.3626501137 to 377,095.7823287122 psi

Description: metal contamination that is located within approximately 5 nm of the surface of the wafer. 1.4 This test method is especially useful for determining the surface metal areal densities in the native oxide or chemically grown oxide of polished silicon substrates after cleaning. 1.5

Description: structures can be formed on the Sapphire wafer surface, and have been expected to be used as the height standard sample for SPM and Immobilization plate for observing biomaterials.

• Diameter: 0.01181103 to 11.81103 inch
• Bore Diameter (I.D.): 0.0787402 inch
• Thickness / Wall Thickness: 0.000393701 to 3.93701 inch
• Thermal Conductivity: 42 W/m-K

Description: The most widely used and best-known fine ceramic material. Good mechanical strength, electrical insulation, high-frequency loss, thermal conductivity, and resistance to heat, wear and corrosion. Sapphire is single-crystal alumina.

• Max Use / Curie Temperature: 800 to 1,000 C
• Thermal Conductivity: 18 W/m-K
• MOR / Flexural Strength: 17,404.4207228636 to 58,014.7357428788 psi
• Compressive / Crushing Strength: 313,279.573011546 to 340,836.572489413 psi

Description: create uniform plasma flow over a wafer surface. Complex geometries – delicate shapes for plasma components Integrated flanges on sapphire tubes for high vacuum applications Polished faces and diameters

• Shape / Form: Fabricated / Custom Shape
• Alumina / Aluminate Type: Sapphire

Description: Aluminum Nitride (AlN) is a suitable material to utilize when high thermal conductivity and electrical insulation are required, making it perfect for use in thermal management and electrical applications. Furthermore, AlN is a popular alternative to Beryllium Oxide (BeO) in the

• Material Type: Aluminum Nitride
• Shape / Form: Plate / Board (e.g., Fiberboard)

Description: oxide, aluminum oxide and other electronic packaging materials, and it is easier to form and finish. High Temperature Applications Temperature stability and excellent resistance to thermal shock makes BN the material of choice in the toughest high temperature applications such

• Density: 1.9000000000000001 to 2.9000000000000004 g/cc
• Max Use / Curie Temperature: 850 to 2,000 C
• Thermal Conductivity: 11 to 130 W/m-K
• Coeff. of Thermal Expansion (CTE): 0.7 to 7.2 µm/m-C

Description: Sapphire is single-crystal alumina, a transparent material with excellent chemical stability and valuable mechanical, thermal and optical properties. Its material properties are vastly superior to glass, quartz and other mass-produced transparent materials.

• Thermal Conductivity: 42 W/m-K
• MOR / Flexural Strength: 100,075.419156466 psi
• Compressive / Crushing Strength: 426,408.307710159 psi
• Modulus of Elasticity: 68,167,314.4978826 psi