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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Bipolar Transistors - BJT NPN Epitaxial Transistor Product overview: KSC945YTA from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers
- IC(max): 150 milliamps
- fT: 300 MHz
- PD: 250 milliwatts
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Power MOSFETs Product overview: 2SK945 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing
- Features: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 5A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.15A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.15A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer
- IC(max): 150 milliamps
- VCEO: 50 volts
- VCBO: 60 volts
- fT: 300 MHz
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Supplier: 4D Systems Pty. Ltd.
Description: for ease of upgrading. There are however some electrical differences. Please refer to the Datasheet of the uLCD-43D for more information. This is relevant for all models, non touch, resistive touch and capacitive touch. 4.3", 480x272 pixels, Intelligent Display Module with Resistive Touch.
- Display Type: Graphic Display
- Technology: Thin Film Transistor (TFT)
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Supplier: Infineon Technologies AG
Description: portfolio provides a wide RDS(ON) range from 3.0 mΩ to 7.0 mΩ and increased datasheet current rating of 60A. Summary of Features Integrated half bridge SSO8 (5x6) 5x6 mm2 reduced footprint & optimized layout for B6 apps Latest OptiMOS™6 40V optimized for switching & power losses Package JEDEC
- VGS(off): 1.2 to 2 volts
- rDS(on): 0.0063 ohms
- TJ: -55 to 175 C
- Features: Automotive, MOSFET, Other
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Supplier: Broadcom Inc.
Description: The HCPL-193K is a two channel hermetically sealed high CMR line receiver optocoupler in a 16-Pin ceramic DIP package with gold plated leads and the highest level of reliability (Class K). Solder dipped leads and various lead forms are also available. See the datasheet for details. The
- Isolation Voltage: 1,500 volts
- Rise Time: 0.03 µs
- Operating Temperature: -55 to 125 C
- Input: DC
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Increment: 1 piece Pricing and Ordering 2,945+: $0.0170/piece 7,145+: $0.0140/piece 10,715+: $0.0140/piece 15,385+: $0.0130/piece 19,235+: $0.0130/piece 25,000+: $0.0120/piece For more information and to download the datasheet, please visit our product page. (read more)
Browse Transistors Datasheets for Win Source Electronics -
- Operating: -55°C to 150°C (TA) Package: SOT-323-3 (SC-70, SOT-323) Applications: Portable electronic devices Battery-powered applications Industrial control systems Consumer electronics For more details, refer to the BSS138PW,115 datasheet. (read more)
Browse Transistors Datasheets for Win Source Electronics -
In an effort to streamline your manufacturing process and improve transistor cooling, Fujipoly® offers a large assortment of box-shaped Sarcon® (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
versatile transistor excels in high-temperature environments with a junction temperature range from -65°C to 200°C, ensuring durability and reliable performance. Its versatility makes it an ideal choice for use in RF circuits, power regulation, switching applications, and more. Designed with (read more)
Browse RF Transmitters Datasheets for LIXINC Electronics Co., Limited -
The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo
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Bill of Materials - Acer V193W A LCD Monitor
http://www.a-power.com.tw/pdf/ Datasheet /AP9971GD.pdf Transistor K912, C945 , P .
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Design Considerations for Microcontroller Based Process Control for Washing Machine
… T8series) are specially recommended for use on inductive loads by their high commutation performances according to datasheet . The output from PC817 photocoupler is 25 mA and C547 transistor is used as gate trigger driver. To prevent from spark surges, 150 ohms resistor is series with gate and C945 collector.
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Bill Of Materials - Tesla 2013 Model S Premium Media Control Unit (1004777-00-C)
Transistor http://diodes.com/ datasheets /ds30934.pdf d3626321-f171-ee74- c945 -a8a1c41f17c3 .
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http://www-us-east.intel.com/content/dam/doc/design-guide/xeon-e7500-e7501-chipset-guide.pdf
By connecting the emitter of the NPN transistor to the 1.8 V plane, current will not … … velocities and trace lengths in the Intel® E7501 Chipset Memory Controller Hub (MCH) Datasheet , “Chipset Interface Trace … C945 .
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Bill Of Materials - Sonos Playbar
http://www.diodes.com/ datasheets /ds11303.pdf Transistor a22f16b1-8411-cade- c945 -857e450b571a .
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http://www.intel.com/content/dam/www/public/us/en/documents/design-guides/xeon-with-512-kb-l2-cachel-e7500-chipset-guide.pdf
By connecting the emitter of the NPN transistor to the 1.8 V plane, current will not … … with 512 KB L2 Cache at 1.80 GHz, 2 GHz, and 2.20 GHz Datasheet for C945 .