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Supplier: Richardson RFPD
Description: CGHV40030P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplifier applications. The datasheet specifications
- Package Type: Other
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Supplier: Richardson RFPD
Description: CGHV40030F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplifier applications. The datasheet specifications
- Package Type: Other
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Supplier: Richardson RFPD
Description: CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet
- Package Type: Other
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Supplier: Richardson RFPD
Description: CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: optimized OptiMOS™6 technology. The portfolio provides a wide RDS(ON) range from 3.0 mO to 7.0 mO and increased datasheet current rating of 60A. Summary of Features Integrated half bridge SSO8 (5x6) 5x6 mm2 reduced footprint & optimized
- Package Type: Other
- Polarity: Other
- Transistor Grade / Operating Range: Automotive
- Transistor Type: MOSFET
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Supplier: 4D Systems Pty. Ltd.
Description: module has an array of features including Touch Detection, micro-SD memory storage, general purpose I/O including Analog Inputs, PWM, multiple TTL Serial, I2C and SPI channels and multiple millisecond resolution timers, amongst many more features. Anything that has been designed in the past
- Display Type: Graphic Display
- Technology: Thin Film Transistor (TFT)
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Supplier: 4D Systems Pty. Ltd.
Description: . Features include; a 4.3" TFT 480x272 touch screen display, audio, micro-SD card connector, an expansion port along with a series of GPIO, I2C, SPI, and UART serial comms. The uLCD-43D/DT/DCT serves as the perfect solution to be deployed at the forefront of any product design
- Display Type: Graphic Display
- Technology: Thin Film Transistor (TFT)
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Supplier: RS Components, Ltd.
Description: - 240 V ac Size = 22.5 x 75mm Number of Outputs = 1 Minimum Operating Temperature = 0°C Maximum Operating Temperature = +50°C Configurable Outputs = Transistor Display Type = Digital Range = Panasonic KT7 Series = KT7
- Control Signal Output: Other
- Number of Control Outputs: 1 outputs
- User Interface: Digital Front Panel
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Supplier: RS Components, Ltd.
Description: Resistor for current input is 800-3622 Output Type = Transistor Supply Voltage = 100 - 240 V ac Size = 48 x 48mm Number of Outputs = 1 Minimum Operating Temperature = 0°C Maximum Operating Temperature = +50°C Configurable Outputs = Transistor Display Type = Digital IP
- Control Signal Output: Other
- Number of Control Outputs: 1 outputs
- User Interface: Digital Front Panel
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Supplier: RS Components, Ltd.
Description: -3631. Shunt Resistor for KT4H / KT4B series is 800-3662. KT4H specific software & lead set is 800-3634 Output Type = Transistor Supply Voltage = 24 V ac/dc Size = 48 x 48mm Number of Outputs = 1 Minimum Operating Temperature = 0°C Maximum Operating Temperature = +50°C
- Control Signal Output: Other
- Number of Control Outputs: 1 outputs
- User Interface: Digital Front Panel
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Supplier: RS Components, Ltd.
Description: /dc Size = 22.5 x 75mm Number of Outputs = 1 Minimum Operating Temperature = 0°C Maximum Operating Temperature = +50°C Configurable Outputs = Transistor Display Type = Digital Range = Panasonic KT7 Series = KT7
- Control Signal Output: Other
- Number of Control Outputs: 1 outputs
- User Interface: Digital Front Panel
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Supplier: Broadcom Inc.
Description: collector Schottky clamped transistor. An enable input gates the detector. The internal detector shield provides a guaranteed common mode transient immunity specification of 1000 V/micro-second. DC specifications are compatible with TTL logic and are guaranteed from -55 degrees C to
- Isolation Voltage: 1500 volts
- Mounting Option: Through Hole (Plug-in)
- Operating Temperature: -55 to 125 C
- Optocoupler Input: DC
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Supplier: Broadcom Inc.
Description: open collector Schottky clamped transistor. An enable input gates the detector. The internal detector shield provides a guaranteed common mode transient immunity specification of 1000 V/micro-second. DC specifications are compatible with TTL logic and are guaranteed from -55 degrees C
- Isolation Voltage: 1500 volts
- Mounting Option: Through Hole (Plug-in)
- Operating Temperature: -55 to 125 C
- Optocoupler Input: DC
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Supplier: Broadcom Inc.
Description: The DSCC SMD 5962-8957202KEC is a two channel hermetically sealed high CMR line receiver optocoupler in a 16-Pin DIP ceramic package with gold plated leads and the highest level of reliability (Class K). Solder dipped leads and various lead form options are also available. See the datasheet
- Isolation Voltage: 1500 volts
- Mounting Option: Through Hole (Plug-in)
- Operating Temperature: -55 to 125 C
- Optocoupler Input: DC
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Supplier: Broadcom Inc.
Description: an open collector Schottky clamped transistor. An enable input gates the detector. The internal detector shield provides a guaranteed common mode transient immunity specification of 1000 V/micro-second. DC specifications are compatible with TTL logic and are guaranteed from -55 degrees
- Isolation Voltage: 1500 volts
- Mounting Option: Through Hole (Plug-in)
- Operating Temperature: -55 to 125 C
- Optocoupler Input: DC
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Increment: 1 piece Pricing and Ordering 2,945+: $0.0170/piece 7,145+: $0.0140/piece 10,715+: $0.0140/piece 15,385+: $0.0130/piece 19,235+: $0.0130/piece 25,000+: $0.0120/piece For more information and to download the datasheet, please visit our product page. (read more)
Browse Transistors Datasheets for Win Source Electronics -
- Operating: -55°C to 150°C (TA) Package: SOT-323-3 (SC-70, SOT-323) Applications: Portable electronic devices Battery-powered applications Industrial control systems Consumer electronics For more details, refer to the BSS138PW,115 datasheet. (read more)
Browse Transistors Datasheets for Win Source Electronics -
In an effort to streamline your manufacturing process and improve transistor cooling, Fujipoly® offers a large assortment of box-shaped Sarcon® (read more)
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The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
versatile transistor excels in high-temperature environments with a junction temperature range from -65°C to 200°C, ensuring durability and reliable performance. Its versatility makes it an ideal choice for use in RF circuits, power regulation, switching applications, and more. Designed with (read more)
Browse RF Transmitters Datasheets for LIXINC Electronics Co., Limited -
The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo
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Bill of Materials - Acer V193W A LCD Monitor
http://www.a-power.com.tw/pdf/ Datasheet /AP9971GD.pdf Transistor K912, C945 , P .
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… T8series) are specially recommended for use on inductive loads by their high commutation performances according to datasheet . The output from PC817 photocoupler is 25 mA and C547 transistor is used as gate trigger driver. To prevent from spark surges, 150 ohms resistor is series with gate and C945 collector.
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Transistor http://diodes.com/ datasheets /ds30934.pdf d3626321-f171-ee74- c945 -a8a1c41f17c3 .
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http://www-us-east.intel.com/content/dam/doc/design-guide/xeon-e7500-e7501-chipset-guide.pdf
By connecting the emitter of the NPN transistor to the 1.8 V plane, current will not … … velocities and trace lengths in the Intel® E7501 Chipset Memory Controller Hub (MCH) Datasheet , “Chipset Interface Trace … C945 .
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http://www.diodes.com/ datasheets /ds11303.pdf Transistor a22f16b1-8411-cade- c945 -857e450b571a .
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http://www.intel.com/content/dam/www/public/us/en/documents/design-guides/xeon-with-512-kb-l2-cachel-e7500-chipset-guide.pdf
By connecting the emitter of the NPN transistor to the 1.8 V plane, current will not … … with 512 KB L2 Cache at 1.80 GHz, 2 GHz, and 2.20 GHz Datasheet for C945 .