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Supplier: Star SU LLC
Description: Star SU offers a wide variety of tungsten carbide blanks and preforms from H.B. Carbide. Using only the highest quality raw materials and employing state-of-the-art, computer controlled vacuum furnaces and vacuum Sinter-Hipping furnaces, these cemented carbide preforms
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Supplier: Star SU LLC
Description: Die and bushing blanks are available in multiple grades for die nibs, drill bushings, valve trim, chokes and more. Minimal grind stock available Competitive lead times Technical assistance with grade application Blanket order options Sinter Hip available
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Supplier: Plansee SE
Description: During hot isostatic pressing (HIP), materials are sintered, combined and compacted at temperatures of approximately 1 450 °C (2642°F) and gas pressures of up to 200 MPa. System components inside the pressure vessel not only have to be large; they must also be
- Application: Firing / Sintering, Heat Treating
- Pressure Range: 29007 psi
- Process Temperature: 2800 C
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Supplier: Kittyhawk Products
Description: Kittyhawk Products believes that high quality, personalized service is a key fundamental in today's market. For aerospace, electronic, commercial, medical, and cladding products alike, we deliver the highest quality of service. HIPing is the answer to solving your precision and complex
- Capabilities: Canning / HIP Tooling, Casting Densification, Densification / Porosity Removal, Diffusion Bonding, Laboratory / Developmental, Piggybacking, Powder Consolidation, Pressure Brazing, Production Processing
- Chamber Diameter: 18 to 46 inch
- Chamber Height: 60 to 84 inch
- Location: North America, United States Only, Southwest US Only
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Supplier: PSM Industries
Description: Carbide ~ Newburgh, New York Ferro-Tic® Machineable Carbides Severe Wear Applications Hot Isostatic Pressed Materials Yillik Carbide Products ~ Precision Cemented Carbides ~ Ontario, California Wide Variety of Precision Drill Bushings Carbide Nozzle Tips
- Density Ratio (% Theoretical Density): Fully Dense, 90% to 99% T.D., 85% to 90% T.D., < 85% T.D., Open Porosity Material
- Forming Process: Mechanical Pressing, HIP, Metal Injection Molding (MIM), Sintering, Other
- Location: North America, United States Only, Northeast US Only, Southwest US Only, Midwest US Only
- Material: Brass / Bronze, Composite, Copper, Nickel Alloy, Stainless Steel, Steel, Other
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
- Transistor Type: MOSFET
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Supplier: General Carbide Corporation
Description: concentricity. When ordering, specify the angle, ID, bearing and grade you require, and we'll meet your specs. General Carbide manufactures more than 50 different grades of carbide and all parts manufactured are sinter-HIP'ed to ensure production of the highest quality material.
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Supplier: Synertech PM Inc.
Description: The leader in development and manufacturing of Powdered Metal Products via Hot Isostatic Pressing Synertech P/M, Inc. has the technical expertise in PM and HIP to research, develop and produse the highest quality products in a cost effective and timely manner. Synertech P
- Cladding / Hardfacing Process: Diffusion Bonding, Hardfacing
- Materials: Carbide / Hardmetal, Copper / Copper Alloy, Nickel / Nickel Alloy, Refractory Metal, Steel - Stainless, Steel - High Carbon / Alloy, Steel - Tool, Titanium Alloy
- Regional Preference: North America, United States Only, Southwest US Only
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Supplier: General Carbide Corporation
Description: carbide blanks for a wide vareity of product shapes, including: feminine hygiene products, diapers, first-aid supplies and other consumer products. All of our dies are guaranteed to be Sinter-HIP'ed to insure optimum metallurgical quality. General Carbide can supply those blanks
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Supplier: General Carbide Corporation
Description: We are a global supplier of superior tungsten carbide rods. Our advanced pressing and shaping systems give us the flexibility to offer numerous grades and sizes of rods, all of which are sinter-HIP'ed to supply porosity-free materials with maximum mechanical strength properties. We
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Supplier: RS Components, Ltd.
Description: Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. Channel Type = N Maximum Continuous Drain Current = 45 A Maximum Drain Source
- Package Type: Other
- Polarity: N-Channel
- V(BR)DSS: 1200 volts
- rDS(on): 0.1000 ohms
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Supplier: RS Components, Ltd.
Description: Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. Channel Type = N Maximum Continuous Drain Current = 45 A Maximum Drain Source
- Package Type: Other
- Polarity: N-Channel
- V(BR)DSS: 1200 volts
- rDS(on): 0.1000 ohms
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Supplier: CoorsTek
Description: CoorsTek Hot Isostatically Pressed (HIPped) zirconia materials are the industry standard for ceramic necking dies and knockouts, outperforming tungsten carbide in several ways. The sub-micron grain size enables an excellent polish for low-friction, voiding wrinkling, puckering, and
- Applications: Wear Parts / Tooling
- Material Type: Zirconia, Specialty Ceramic
- Shape / Form: Fabricated / Custom Shape
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 1324371-SCTW40N120G2 V Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide
- PD: 278000 milliwatts
- Package Type: TO-247, SOT3, Other
- Packing Method: Shipping Tube / Stick Magazine, Other
- Polarity: N-Channel
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Supplier: Win Source Electronics
Description: : STMicroelectronics Package: Tube Product Status: Active Package / Case: TO-247-3 Supplier Device Package: HiP247™ Long Leads Base Product Number: SCTWA30 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current
- PD: 270000 milliwatts
- Package Type: SOT3
- Polarity: N-Channel
- QG: 105 nC
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 1324369-SCTWA90N65G2 V-4 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide
- Package Type: TO-247, SOT3, Other
- Polarity: N-Channel
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1091914-SCT1000N170 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 600 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1700 V
- Package Type: SOT3
- Polarity: N-Channel
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Supplier: ASTM International
Description: material specifications that contain the engineering data obtained from these test specimens. 1.4 These practices are not applicable to metal powder test specimens that are produced by other processes such as cold isostatic pressing (CIP), hot isostatic pressing (HIP), powder forging (PF
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Supplier: ASTM International
Description: specifications that contain the engineering data obtained from these test specimens. 1.4 These practices are not applicable to metal powder test specimens that are produced by other processes such as cold isostatic pressing (CIP), hot isostatic pressing (HIP), powder forging (P/F) or metal
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Supplier: ASTM International
Description: specifications that contain the engineering data obtained from these test specimens. 1.4 These practices are not applicable to metal powder test specimens that are produced by other processes such as cold isostatic pressing (CIP), hot isostatic pressing (HIP), powder forging (PF) or metal
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Supplier: ASTM International
Description: material specifications that contain the engineering data obtained from these test specimens. 1.4 These practices are not applicable to metal powder test specimens that are produced by other processes such as cold isostatic pressing (CIP), hot isostatic pressing (HIP), powder forging (PF
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Supplier: Plansee SE
Description: is guaranteed. Our optimum microstructure. Your perfect coating. Coarse or fine metal powder? Forging, HIP or other axial forming methods? We vary and combine our different production processes to make sure that the coating you finally use is particularly smooth and fine. And in
- Type: Sputtering Target
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Supplier: Plansee SE
Description: keep their cool, a smoother coating is guaranteed. Our optimum microstructure. Your perfect coating. Coarse or fine metal powder? Forging, HIP or other axial forming methods? We vary and combine our different production processes to make sure that the coating you finally use is
- Type: Sputtering Target
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Supplier: Plansee SE
Description: isostatic pressing (HIP). And for any questions you have about sintering, brazing, annealing and heating systems, we are the right people to ask. Is your process not yet on the list? That makes it all the more exciting. Because we regularly develop hot zones for new thermal processes in
- Application: Annealing, Brazing / Soldering, Firing / Sintering, Heat Treating
- Atmosphere: Air / Oxidizing, Inert, Vacuum
- Process Temperature: 1000 to 2800 C
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Advanced ceramics are used today in many applications and the market continues to grow at close to 10% per year. The various types of advanced ceramics include oxide, carbide, nitride, boride, and nano-sized ceramic powders. Gelest offers many products which can be used as precursors to the (read more)
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biological, similar to human hip bones forming the outside of the bike’s fuel tank. Wireless Future Many devices are designed to be “wireless,” like Bluetooth. This will be for product replacement sales or product design improvement data (read more)
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New Products & Processes
~ 45 Low"Pressure HIP: Low-pressure hot isostatic pressure systems for cemented tungsten carbides are designed to dewax, sinter, and HIP carbide parts at low pressures found to be effective in improving density, reducing porosity, and possibly improving transverse rupture strength of…
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Powder metallurgy T15 tool steel: Part II. Microstructure and properties after heat treatment
Volume fractions of MC and M6C carbides after hip- ping and after hipping, anstenitizing, and quenching are compared in Figures 2(a) and (b).
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Engineering ceramics
SiC whisker-silicon carbide , hipped , 229 .
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Hot isostatically pressed tool steels: mechanical and physical properties
Evidently the general heat treating response for PM tool steels is identical to that of conventional tool steels of equal composition with the only restriction that the very fine carbides in HIP tool steels dissolve faster than the segregated coarse carbides in…
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Strength improvement of cemented carbides by hot isostatic pressing (HIP)
No investigations have been published up till now to determine which of the above two mechanisms is responsible for the increase in strength of cemented carbides by HIP , and neither has any attempt been made to in- terpret the mechanical behaviour of…
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PM into the 1990S
The results show that sinter/hip processing has the same effect on various cemented carbides as hipping except on low Co binder and fine WC cemented carbides.
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Study of Metallic Carbide (MC) in a Ni-Co-Cr-Based Powder Metallurgy Superalloy
carbide-forming elements.[1,8–10] Therefore, research on the decomposition mechanism of carbides during HIP is of importance to eliminate PPB in the PM superalloys.
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Microstructural and mechanical characterisation of composite materials consisting of M3/2 high speed steel reinforced with niobium carbides
The composite materials prepared by mechanical mixing of water atomised M3/2 steel powders with 5 and 8 vol.-% of high purity niobium carbide and hipped at 1150uC have a fine grained and homogeneous microstructure.
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Effect of high pressure on the structure and properties of materials based on boron carbide
Dependence of the Density* of Materials Based on Boron Carbide on HIP Schedules .
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Imaging and microanalysis of liquid phase sintered silicon-based ceramic microstructures
Figure 16 Elemental distribution images of a triple grain junction in a silicon carbide ceramic HIP :ed with the addition of 1.3 wt% Al2O3 and 1.7 wt% Y2O3.