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Supplier: Skyworks Solutions, Inc.
Description: Low Power Multi-Level Class-D Audio Amplifier
- Amplifier Type: Power Amplifier
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Supplier: AR Modular RF
Description: The Model KAW2040 is a Class AB wideband RF power amplifier delivering in excess of 100 Watts CW power into a 50-Ohm load over the frequency range of 100 MHz to 500 MHz. Power gain is a minimum of 50 dB. GPIB control requires the optional IEEE488.2/RS232
- Frequency Range: 100 to 500 MHz
- Minimum Gain: 50 dB
- Output Power( P1dB): 50 dBm
- Gain Flatness: 2.5 dB
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Supplier: Skyworks Solutions, Inc.
Description: Mono Low-Power Multi-Level Class-D Audio Amplifier IC
- Amplifier Type: Power Amplifier
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Supplier: Richardson RFPD
Description: 1.5 – 2.8 GHz 2 WATTS LOW NOISE POWER AMPLIFIER WBPA1530A. WBPA1530A is a low noise figure, wideband, and high linearity class A power amplifiers with unconditional stable design. The amplifier offers typical 1.5 dB noise figure, 33.0 dBm output P1dB, 38.0
- Frequency Range: 1,500 to 2,800 MHz
- Maximum Gain: 38 dB
- Output Power( P1dB): 33 dBm
- Minimum Operating Voltage: 10 volts
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Supplier: Richardson RFPD
Description: 0.47- 0.96 GHz UHF 10 W LOW NOISE POWER AMPLIFIER WPA0510A. WPA0510A is a low noise figure, wideband, and high linearity class A operation power amplifier. The amplifier offers typical 40.0 dBm output P1dB, 0.90 dB noise figure, 50 dB gain, and 52.0 dBm
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Supplier: NuWaves Ltd.
Description: The NuPower™ 12A03A-D30 Micro L- & S-band radio frequency (RF) power amplifier boasts the industry's smallest form factor in its class of PAs at 1.62 cubic inches and provides 5 watts of RF power for CW and near-constant-envelope waveforms from 1.0 to 2.5
- Frequency Range: 1,000 to 2,500 MHz
- Minimum Gain: 7 dB
- Maximum Gain: 7 dB
- Output Power( P1dB): 37.78151250383644 dBm
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Supplier: Custom MMIC
Description: The CMD184 is a 4.5 W wideband GaN MMIC power amplifier die which operates from 0.5 to 20 GHz. The amplifier delivers greater than 13 dB of gain with a corresponding output 1 dB compression point of +34.5 dBm and a saturated output power of +36.5 dBm. The CMD184
- Frequency Range: 500 to 20,000 MHz
- Minimum Gain: 13 dB
- Maximum Gain: 13 dB
- Output Power( P1dB): 34.49999999999999 dBm
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Supplier: Qorvo
Description: The Qorvo® QM75041 is a highly integrated Sub-6GHz PAMiD compliant to 5G-NR standards focused on Best-in-class 5G performance and ease-of-use (EOU) for platforms targeting advanced RF, including flagship/premium smartphones and data devices. The module consists of a High Band PA,
- Amplifier Type: Power Amplifier
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Supplier: Fairview Microwave Inc.
Description: RF power amplifier FMAM5079 from Fairview Microwave is just one amp of a large selection of in-stock radio frequency amplifiers specifically stocked to be highly available for quick shipment. Fairview RF power amplifier is a connectorized medium
- Frequency Range: 4,400 to 4,900 MHz
- Maximum Gain: 48 dB
- Output Intercept Point (IP3): 44 dBm
- Maximum Operating Voltage: 32 volts
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Supplier: Fairview Microwave Inc.
Description: specs on this high gain high power amplifier from Fairview Microwave can be found in the details on the RF power amplifier datasheet specifications PDF above. Our high power high gain amplifier is part of over one million RF, microwave and
- Frequency Range: 800 to 2,000 MHz
- Maximum Gain: 55 dB
- Output Intercept Point (IP3): 44 dBm
- Maximum Operating Voltage: 30 volts
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Supplier: Fairview Microwave Inc.
Description: RF power amplifier FMAM5074 from Fairview Microwave is just one amp of a large selection of in-stock radio frequency amplifiers specifically stocked to be highly available for quick shipment. Fairview RF power amplifier is a connectorized medium
- Frequency Range: 2,000 to 2,600 MHz
- Maximum Gain: 54 dB
- Output Intercept Point (IP3): 43 dBm
- Maximum Operating Voltage: 30 volts
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Supplier: APITech
Description: The QB-617 is a Class “A” amplifier operating in a communication band of 1930 to 1990MHz to jam communication band frequencies. This addition to API’s power amplifier product line offers a minimum output power of 100 watts with a gain of 50dB, with multiple carrier
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Supplier: Fairview Microwave Inc.
Description: Additional specs on this medium power amplifier from Fairview Microwave can be found in the details on the RF power amplifier datasheet specifications PDF above. Our medium power amplifier is part of over one million RF, microwave and
- Frequency Range: 1,000 to 2,500 MHz
- Maximum Gain: 13.6 dB
- Output Intercept Point (IP3): 41.99999999999999 dBm
- Maximum Operating Voltage: 32 volts
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Supplier: Custom MMIC
Description: The CMD249P5 is wideband GaAs MMIC distributed power amplifier housed in a leadless 5x5 mm plastic surface mount package. The amplifier delivers 12.5 dB of gain with a corresponding output 1 dB compression point of +28 dBm and an output IP3 of 39 dBm at 10 GHz. The CMD249P5 is a
- Frequency Range: 20,000 MHz
- Minimum Gain: 12.5 dB
- Maximum Gain: 12.5 dB
- Output Power( P1dB): 27.999999999999996 dBm
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Supplier: AR RF/Microwave Instrumentation
Description: The Model 100U1000A is a solid-state, Class A design, self-contained, air-cooled, broadband power amplifier designed for applications where instantaneous bandwidth, high gain and linearity are required. It will provide a minimum of 100 W across its operating bandwidth.
- Output Power( P1dB): 50 dBm
- Applications: Mobile / Wireless Systems
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Supplier: ValueTronics International, Inc.
Description: The 325LA is a class A power amplifier. The 325LA is designed for RFI/EMI applications as well as general labratory purposes. The 320L delivers low distortion amplification over the entire useful frequency range. Additional Features: Gain: 50dB Power Output meter measures
- Frequency Range: 150 MHz
- Amplifier Type: Power Amplifier
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Supplier: Renesas Electronics Corporation
Description: The ISL99201 is a fully integrated high efficiency class-D mono amplifier. It is designed to maximize performance for mobile phone applications. The application circuit requires a minimum requirement of external components and operates from a 2.4V to 5.5V input supply. It is
- Features: Audio Amplifiers, Single Supply, Thermal Shutdown Protection
- Operation Class: Class D
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Supplier: Broadcom Inc.
Description: The compact footprint, low profile, integrated power detector, power down function and excellent power efficiency makes the MGA-412P8 an ideal choice for mobile IEEE 802.11b/g WLAN applications. The best-in-class power efficiency is achieved through the use of a
- Frequency Range: 1,700 to 3,000 MHz
- Minimum Gain: 25.5 dB
- Maximum Gain: 25.5 dB
- Output Power( P1dB): 25.300000000000004 dBm
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Supplier: Qorvo
Description: An excellent alternative to traveling wave tube amplifiers, Qorvo's Spatium™ QPB2731N is a solid state, spatial combining amplifier with an operating range of 27.5 - 31 GHz while achieving greater than 49 dBm of instantaneous linear power. With its maximum performance in output
- Frequency Range: 27,500 to 31,000 MHz
- Minimum Operating Voltage: 22 volts
- Maximum Operating Voltage: 22 volts
- Applications: Military / Defense
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Supplier: Qorvo
Description: signal flatness, and RF output power, this Spatium is the ideal building block for millimeter-wave sub-systems with wide-ranging applications. Qorvo's patented and field-proven Spatium combining technology provides unprecedented Solid-State Power Amplifier (SSPA)
- Frequency Range: 34,000 to 36,000 MHz
- Minimum Operating Voltage: 28 volts
- Maximum Operating Voltage: 28 volts
- Applications: Military / Defense, Radar Systems
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Supplier: Mini-Circuits
Description: Mini-Circuits’ ZHL-50W-GAN+ and ZHL-50W-GANX+ are Class A, high power amplifiers that utilize a Gallium Nitride (GaN) push-pull output stage, which results in a higher efficiency (50% typ.) as compared to GaAs, LDMOS and VDMOS counterparts. These amplifiers provide 50 W
- Frequency Range: 20 to 500 MHz
- Minimum Gain: 1.2 dB
- Maximum Gain: 1.2 dB
- Output Power( P1dB): 46.2 to 48 dBm
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Supplier: Mini-Circuits
Description: Mini-Circuits’ ZVE-143(X)-S+ is a Class A, two-stage, unconditionally stable amplifier providing flat gain over an extremely wide frequency range from 8 to 14 GHz. This model is capable of delivering up to 0.6 W output power at P1dB with high output IP3 supporting a wide range
- Minimum Operating Voltage: 17 volts
- Maximum Operating Voltage: 17 volts
- Operating Temperature: -40 to 85 C
- Nominal Impedance: 50 Ohms
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Supplier: Mini-Circuits
Description: Mini-Circuits’ ZHL-5W-63-S+ is a class AB medium-power connectorized amplifier utilizing a GaN output transistor supporting a wide range of applications from 600 to 6000 MHz, such as test instrumentation, SATCOM, and mobile communications systems, including those operating in
- Minimum Operating Voltage: 32 volts
- Maximum Operating Voltage: 32 volts
- Operating Temperature: 0 to 60 C
- Nominal Impedance: 50 Ohms
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Supplier: AR RF/Microwave Instrumentation
Description: overdrive by an RF input leveling circuit which controls the RF input level to the RF amplifier first stage when the RF input level is increased above 0 dBm. The RF amplifier stages are protected from overtemperature by removing the DC voltage to them
- Frequency Range: 700 to 6,000 MHz
- Output Power( P1dB): 53.979400086720375 dBm
- Applications: Mobile / Wireless Systems
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Supplier: Visual Sound, Inc.
Description: QSC Audio Products, Inc. The model ISA 1350 Professional Power Amplifier drives 70V lines directly with 1500 watts per channel. The ISA Installed System Amplifiers are designed to meet the needs of sound system designers and contractors worldwide. Versatile loading options and a
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Supplier: ValueTronics International, Inc.
Description: Engineers use RF signal generators as test equipment, mostly to measure responses of filters, amplifiers, and electrical components. Additional Features: Frequency Range: 250 kHz-67 GHz Output Power typical performance: +23dBm @ 20 GHz, + 17dBm @ 40 GHz, + 14dBm @ 67 GHz with
- Minimum Frequency Range: 67,000 MHz
- Maximum Frequency Range: 67,000 MHz
- Device Type: Generator
- Generator Type: Signal, Sweep
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Supplier: Custom MMIC
Description: corresponding output 1 dB compression point of +28 dBm and a noise figure of 1.8 dB. The CMD278C4 features an RF input power survivability of greater than 5 Watts. Features High gain Low noise figure High linearity High RF power survivability Pb-free RoHS compliant 4x4
- Frequency Range: 8,000 to 12,000 MHz
- Minimum Gain: 15 dB
- Maximum Gain: 15 dB
- Output Power( P1dB): 27.999999999999996 dBm
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Supplier: Broadcom Inc.
Description: Avago Technologies’ ALM-32320 is a high linearity 2 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain compression point. The ALM-32320 is optimized for general purpose gain block and class A driver amplifier for WiMAX base station applications.
- Frequency Range: 3,300 to 3,900 MHz
- Minimum Gain: 11.2 dB
- Maximum Gain: 14.2 dB
- Output Power( P1dB): 34.49999999999999 dBm
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Supplier: Qorvo
Description: operate off of a 5V supply but also provides DC overvoltage protection. This protects the amplifier from electrical DC voltage surges and high input RF input power levels that may occur in a system. On-chip ESD protection allows the amplifier to have a very robust
- Frequency Range: 50 to 1,500 MHz
- Minimum Gain: 20.8 dB
- Maximum Gain: 20.8 dB
- Output Power( P1dB): 33 dBm
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Supplier: Win Source Electronics
Description: Manufacturer: Texas Instruments Win Source Part Number: 019196-LM386MX-1/NOPB Packaging: Reel - TR Type: Class AB Mounting: SMD (SMT) Output Type: 1-Channel (Mono) Max Output Power x Channels @ Load: 325mW x 1 @ 8 Ohm Family Name: LM386 Categories: Integrated Circuits Status: Active
- Supply Voltage (VS): 4 to 12 volts
- Output Power (PO): 0.325 watts
- Operating Temperature: 0 to 70 C
- Features: Audio Amplifiers, Industrial, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Texas Instruments Win Source Part Number: 092944-LM386MX-1 Packaging: Reel - TR Type: Class AB Mounting: SMD (SMT) Output Type: 1-Channel (Mono) Max Output Power x Channels @ Load: 325mW x 1 @ 8 Ohm Family Name: LM386 Categories: Integrated Circuits Status: Active
- Supply Voltage (VS): 4 to 12 volts
- Output Power (PO): 0.325 watts
- Operating Temperature: 0 to 70 C
- Features: Audio Amplifiers, Industrial, Other
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Supplier: Wolfspeed
Description: single-carrier WCDMA performance, 1990 MHz, 28 V, 9.9 dB PAR @ 0.01% CCDR Output power = 50 W Efficiency = 29% Gain = 20 dB ACPR = –34 dBc @ 5 MHz Capable of handling 10:1 VSWR @28 V, 220 W (CW) output power Integrated ESD protection : Human Body Model, Class 1C (per
- Power Gain: 20.5 dB
- Output Power: 220 watts
- Operating Frequency: 1,805 to 1,990 MHz
- Features: MOSFET, Other
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Supplier: Wolfspeed
Description: LDMOS process, this device provides excellent thermal performance and superior reliability Features Broadband internal input and output matching Typical Pulsed CW performance, 1842 MHz, 28 V, single side, 16 μs, 10% duty cycle, class AB test Output power at P1dB = 175 W Output
- Power Gain: 20 dB
- Output Power: 222 watts
- Operating Frequency: 1,805 to 1,880 MHz
- Features: MOSFET, Other
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Supplier: Wolfspeed
Description: The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent
- Power Gain: 17 dB
- Output Power: 50 watts
- Operating Frequency: 1,200 to 1,400 MHz
- Features: MOSFET, Other
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Supplier: Wolfspeed
Description: performance, 1842.5 MHz, 28 V, Doherty configuration Output power at P3dB = 420 W Efficiency = 62% Gain = 14 dB Capable of handling 10:1 VSWR @28 V, 110 W (WCDMA) output power Integrated ESD protection Human Body Model, Class 2 (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance
- Power Gain: 16 dB
- Operating Frequency: 1,805 to 1,880 MHz
- Features: MOSFET, Other
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-pull amplifiers, and RF power amplifiers. Power amplifiers are typically found in the final output stages of a circuit. There are five classes of power amplifiers: Class A, B, AB, C, and D. Let’s take a look at the characteristics of each. Class A power amplifiers’ (read more)
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. GaN Systems’ GeN2 amplifier and companion power supply reference design is optimized for sound quality, thermal performance, size, and cost. The evaluation kit includes a 2 channel, 200W per channel (8 ohm) Class-D audio amplifier with 96% efficiency and companion 400W continuous, 550W peak (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
controlled RF power amplifier ideal for ISM band and industrial wireless communication. With excellent small-signal gain of 32 dB and superior noise performance, it supports reliable mid-power amplification with flexible output control (read more)
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The QPL1842 is a GaAs pHEMT single ended MMIC RF amplifier IC featuring 25dB of gain and low noise from 5MHz to 850MHz. This high linearity IC is designed to support Broadband CATV DOCSIS 4.0 applications, such as Nodes, Amplifiers, and Remote PHY Devices, as well as Fiber to The Home (read more)
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The QPL1840 is a GaAs pHEMT single ended MMIC RF amplifier IC featuring 17 dB of gain and low noise from 5 MHz to 1800 MHz. This high linearity IC is designed to support Broadband CATV DOCSIS 4.0 applications, such as Nodes, Amplifiers, and Remote PHY Devices, as well as (read more)
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the final RF amplifier in GSM hand-held equipment in 900 MHz band and other applications in the UHF bands. An analog on-board power controller provides over 70 dB range of gain adjustment. This control also allows for power down with a voltage equal to the logic “Low” to set the device (read more)
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Qorvo's QPA2597 is a packaged driver amplifier using proven GaN on SiC technology. The QPA2597 operates from 2.0 to 6.0GHz and provides 32 dBm of output with 24 dB of small signal gain and 37 % power-added efficiency. Using GaN MMIC technology and plastic packaging, the QPA2597 provides (read more)
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Qorvo's QPA2811 is a packaged, high-power X-band amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 8.5?-?10.55 GHz, the QPA2811 provides 48.9 dBm of saturated output power and 27.9 dB of large-signal gain while achieving 48.5 % power (read more)
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Qorvo's QPA0813 is a packaged, high performance driver amplifier fabricated on Qorvo's production 0.15 um GaAs pHEMT process (QPHT15). Covering 8?-?11 GHz, the QPA0813 provides 0.7 W of saturated output power with 50% power-added efficiency. The device has an Enable / Disable function for fast (read more)
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, distortion-controlled power delivery. Advanced Digital Control Architecture SPWM-based D-class (read more)
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RF Power Amplifiers
Class D RF Power Amplifiers .
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Comparative study of recent advances in power amplification devices and circuits for wireless communication infrastructure
RECENT PERFORMANCES OF CLASS D RF POWER AMPLIFIERS .
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Current-mode class-D power amplifiers for high-efficiency RF applications
[2] S. El-Hamamsy, “Design of high-efficiency RF class D power ampli- fier ,” IEEE Trans.
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Design of highly efficient, high output power, L-band class D-1 RF power amplifiers using GaN MESFET devices.
[8] T. Dellsperger, “Device evaluation for Current Mode Class D RF power amplifiers ,” Diploma thesis, University of California, Santa Barbara, Aug. 2003.
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A 50 W LDMOS current mode 1800 MHz class-D power amplifier
…Raab, Solid State Radio Engineering, New York: Wiley, 1980 [3] S. C. Cripps, “RF Power Amplifiers for Wireless Communications,” Norwood, MA: Artech House, 1999 [4] S. El-Hamasay, “ Design of high efficiency RF class D power amplifier ,” IEEE Trans.
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Design of high-efficiency current-mode class-D amplifiers for wireless handsets
[4] S. El-Hamamsy, “Design of high-efficiency RF class D power amplifier ,” IEEE Trans.
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Battery-powered pulsed high density inductively coupled plasma source for pre-ionization in laboratory astrophysics experiments.
The source uses a customized 13.56 MHz class D RF power amplifier that is powered by AA batteries, allowing it to safely float at 3-6 kV with the electrodes of the high voltage pulsed power experiments.
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Abstract Submitted
for the DPP11 Meeting of
The American Physical Society
We are investigating pre-ionization with a pair of 13.56 MHz class D RF power amplifiers capable of outputting over 3 kW pulsed power each.
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Abstract Submitted
for the DPP12 Meeting of
The American Physical Society
To overcome this constraint, we have designed and constructed a pre-ionization system powered by a pulsed 3 kW 13.56 MHz class D RF power amplifier .
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Recently Published Books
Topics: Introduction, class A RF power amplifiers; class AB, B and C RF power amplifiers; class D RF power amplifiers ; class E zero-voltage-switching power amplifiers; class E zero-current- switching power amplifiers; class DE RF power amplifiers; class F RF…