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Supplier: RS Components, Ltd.
Description: Photodetector 0.014MHz 8-Pin SOP
- Photodiode Spectral Response: IR, UV
- Photodiode Type: PIN Photodiode
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Supplier: Hamamatsu Photonics Europe
Description: For UV to visible, precision photometry; suppressed near IR sensitivity Features - High UV sensitivity: QE＝75 % (λ=200 nm) - Suppressed near IR sensitivity - Low dark current - High reliability
- Sensitivity: 0.36 A/W
- Spectral Response Range: 320 to 1,000 nm
- Active Area Diameter or Length: 3.6 mm
- Active Area Height: 3.6 mm
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Supplier: Electro Optical Components, Inc.
Description: damaging photodiodes during soldering and cleaning, consider using sockets. SiC photodiodes features & types High responsivity – 0.13 A/W peak UV radiation hardness Cost effective standard sizes Low temperature coefficient Built in Preamplifiers optional UV A, B, C, BC &
- Spectral Response Range: 315 to 395 nm
- Operating Temperature: -25 to 85 C
- Photodiode Package: Leaded, Through Hole Technology (THT)
- Photodiode Spectral Response: UV
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Supplier: Hamamatsu Photonics Europe
Description: 35-element Si photodiode array for UV to NIR The S4114-35Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range
- Sensitivity: 0.5 A/W
- Spectral Response Range: 190 to 1,000 nm
- Rise Time: 100 ns
- Dark Current: 0.06 nA
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Supplier: DigiKey
Description: Photodiode 4µs 45°
- Sensitivity: 0.115 A/W
- Rise Time: 4,000 ns
- Operating Temperature: -20 to 80 C
- Photodiode Package: Through Hole Technology (THT)
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Supplier: Electro Optical Components, Inc.
Description: damaging photodiodes during soldering and cleaning, consider using sockets. SiC photodiodes features & types High responsivity – 0.13 A/W peak UV radiation hardness Cost effective standard sizes Low temperature coefficient Built in Preamplifiers optional UV A, B, C, BC &
- Active Area Diameter or Length: 0.266 to 1 mm
- Active Area Height: 0.266 to 1 mm
- Photodiode Package: Leaded, Through Hole Technology (THT)
- Photodiode Spectral Response: UV
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Supplier: Electro Optical Components, Inc.
Description: damaging photodiodes during soldering and cleaning, consider using sockets. SiC photodiodes features & types High responsivity – 0.13 A/W peak UV radiation hardness Cost effective standard sizes Low temperature coefficient Built in Preamplifiers optional UV A, B, C, BC &
- Sensitivity: 0.13 A/W
- Spectral Response Range: 205 to 395 nm
- Active Area Diameter or Length: 0.10000000000000002 to 2.525 mm
- Active Area Height: 5.1000000000000005 mm
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Supplier: Ophir-Spiricon Inc.
Description: Thermal head for average power from 60 um to 10 KW
- Spectral Response Range: 190 to 20,000 nm
- Active Area Diameter or Length: 29.000000000000004 mm
- Rise Time: 1,500,000,000 ns
- Photodiode Spectral Response: IR, UV, Visible
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. Inversion layer
- Sensitivity: 0.14 A/W
- Spectral Response Range: 200 to 1,100 nm
- Active Area Diameter or Length: 7.87 mm
- Rise Time: 3.5 ns
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Supplier: Photonique SA
Description: No Description Provided
- Spectral Response Range: 310 to 850 nm
- Active Area Diameter or Length: 2.1 mm
- Active Area Height: 2.1 mm
- Rise Time: 0.6 ns
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Active Area Diameter or Length: 10.000000000000002 mm
- Rise Time: 250 ns
- Operating Temperature: -20 to 80 C
- Photodiode Package: Leaded
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Supplier: OSI Optoelectronics
Description: Multichannel array photodetectors consist of a number of single element photodiodes laid adjacent to each other forming a one-dimensional sensing area common cathode substrate. They can perform simultaneous measurements of a moving beam or beams of many wavelengths. They feature low
- Sensitivity: 0.5 A/W
- Spectral Response Range: 200 to 1,100 nm
- Active Area Diameter or Length: 6.449999999999999 mm
- Active Area Height: 0.28 mm
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Supplier: Ophir-Spiricon Inc.
Description: Thermal head for medium power to 300 W
- Spectral Response Range: 250 to 2,940 nm
- Active Area Diameter or Length: 29.000000000000004 mm
- Rise Time: 1,500,000,000 ns
- Photodiode Spectral Response: IR, UV, Visible
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Supplier: Micropac Industries, Inc.
Description: The 61010 is an N-P-N Planar Silicon Photodarlington Transistor in a small outline package designed to be housing mounted. Its large effective aperture and narrow angular response make this a highly sensitive device with minimum response to off-axis or stray light. This sensor is also available
- Sensitivity: 100 A/W
- Spectral Response Range: 290 to 1,200 nm
- Rise Time: 50,000 ns
- Operating Temperature: -55 to 125 C
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Supplier: Photonique SA
Description: No Description Provided
- Spectral Response Range: 350 to 800 nm
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Rise Time: 1.8 ns
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Active Area Diameter or Length: 1 mm
- Rise Time: 0.7 ns
- Quantum Efficiency: 100 %
- Operating Temperature: -20 to 80 C
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics' 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens. Over a wide range of sensitivity
- Spectral Response Range: 200 to 1,100 nm
- Active Area Diameter or Length: 2.57 mm
- Operating Temperature: -20 to 60 C
- Noise Equivalent Power (NEP): 0.0000000000000091 W/Hz½
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Supplier: Ophir-Spiricon Inc.
Description: General use for large aperture pulsed lasers
- Spectral Response Range: 150 to 20,000 nm
- Active Area Diameter or Length: 46.00000000000001 mm
- Photodiode Spectral Response: IR, UV, Visible
- Features: Other
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Supplier: Ophir-Spiricon Inc.
Description: Automatic dynamic cancellation of up to 98% of background light
- Spectral Response Range: 200 to 1,100 nm
- Active Area Diameter or Length: 10.000000000000002 mm
- Active Area Height: 10.000000000000002 mm
- Rise Time: 200,000,000 ns
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Supplier: Photonique SA
Description: No Description Provided
- Spectral Response Range: 350 to 950 nm
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Rise Time: 5 ns
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Active Area Diameter or Length: 2 to 5.000000000000001 mm
- Rise Time: 500 ns
- Quantum Efficiency: 100 %
- Operating Temperature: -20 to 80 C
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Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices
… Barkad, H., Soltani, A., Mattallah, M., Gerbedoen, J., Rousseau, M., Jaeger, J. D., Moussa, A. B., Mortet, V., Haenen, K., Benbakhti, B., Moreau, M., Dupuis, R., and Ougazzaden, A., “Design, fabrication and physical analysis of tin/aln deep uv photodiodes ,” J. Phys.
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Secondary scintillation readout from GEM and THGEM with a large area avalanche photodiode
The LAAPD is a Deep UV photodiode from API, with an active diameter of 1.6 cm.
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Author index with titles (volume 43)
Benbakhti B, Moreau M, Dupuis R and Ougazzaden A: Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes 465104 Barkhudarov E M, Berezhetskaya N K, Kop’ev V A, Kossyi I A, Popov N A, Taktakishvili M I and Temchin S M …
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OSA | Applications of Robust, Radiation Hard AlGaN Optoelectronic Devices in Space Exploration and High Energy Density Physics
We report demonstration of radiation hardness and environmental robustness of AlGaN deep UV Light Emitting Diodes and deep UV Photodiodes , and their applications in space science instruments and in High Energy Density Physics diagnostics.
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Applications of robust, radiation hard AlGaN optoelectronic devices in space exploration and high energy density physics
We report demonstration of radiation hardness and environmental robustness of AlGaN deep UV Light Emitting Diodes (LEDs) and deep UV Photodiodes , and their applications in space science instruments for AC charge management, and in High Energy Density Physics diagnostics.
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Hydrogen-terminated boron-doped diamond films under intense gamma irradiation
For space or extreme radiation environment applications such as deep UV photodiode (alternatively, visible blind), medical radiotherapy, and novel nuclear micro-battery [3-6], it is of utmost importance to demonstrate the influence of radiation on materials' structural integrity as well as …
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Semiconductor ultraviolet photodetectors based on ZnO and MgxZn1−xO
These results prove that high-performance Schottky-type deep - UV photodiodes can be fulfilled with heteroepitaxial W − MgxZn1−xO films.
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DSpace@MIT: Deep UV photon-counting detectors and applications
Recently, DARPA has initiated a program called Deep UV Avalanche Photodiode (DUVAP) to develop semiconductor alternatives to PMTs for use in the deep UV.
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http://dspace.mit.edu/openaccess-disseminate/1721.1/52687
Recently, DARPA has initiated a program called Deep UV Avalanche Photodiode (DUVAP) to develop semiconductor alternatives to PMTs for use in the deep UV.
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DSpace@MIT: Deep UV photon-counting detectors and applications
Recently, DARPA has initiated a program called Deep UV Avalanche Photodiode (DUVAP) to develop semiconductor alternatives to PMTs for use in the deep UV.