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Supplier: Electro Optical Components, Inc.
Description: Silicon carbide SiC photodetectors / photodiodes have a spectral response of approximately 210 – 380 nm and are not sensitive to UV radiation outside this region. This makes them ideal detectors in certain applications for monitoring the UV spectrum without the need for solar
- Active Area Diameter or Length: 0.2500 to 3.3 mm
- Active Area Height: 0.2500 to 3.3 mm
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
- Spectral Response: UV
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Supplier: Electro Optical Components, Inc.
Description: The Silicon Carbide (SiC) UV APD has many of the properties of other APDs in that it is extremely sensitive and has high signal gain, but is only sensitive to UV (see wavelength response curve above). Because the substrate is tougher SiC, the bias voltage is higher than silicon based
- Active Area Diameter or Length: 0.0044 mm
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon Carbide
- Photodiode Package / Mounting: Other
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Supplier: RS Components, Ltd.
Description: The BPW 21, from OSRAM Opto Semiconductors, is a photodiode within a TO-39 metal can package. This through-hole metal package is hermetically sealed. The BPW 21 has been designed for applications from 350 to 820 nm, similar to the human eye (VLambda). Suitable applications for the BPW 21
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 350 to 820 nm
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Supplier: RS Components, Ltd.
Description: This family of PIN photodiodes, from OSRAM Opto Semiconductor, are in DIL plastic packages. The BPW 34 family offer enhanced blue sensitivity from a radiant sensitive area of 2.73 x 2.73 mm². These PIN photodiodes have a half angle of 60° and are available in both through-hole and
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 350 to 1100 nm
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Supplier: RS Components, Ltd.
Description: The TEMD5080 series, from Vishay Semiconductors, are a family of PIN photodiodes with enhanced blue sensitivity. They are in compact SMD packages with a clear epoxy. The packages contain a chip with a sensitive area of 7.7mm². The TEMD5080 are ideal for high speed photo detector
- Photodiode Material: Silicon
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 350 to 1100 nm
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Supplier: RS Components, Ltd.
Description: The BPX 65 PIN photodiode, from OSRAM Opto Semiconductors, are in TO-18 metal can packages. The metal can is hermetically sealed, making the BPX 65 ideal for applications in harsh environments up to 125°C. Other suitable applications include industrial electronics, high speed photo detectors
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 350 to 1100 nm
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Supplier: Electro Optical Components, Inc.
Description: Silicon carbide SiC photodetectors / photodiodes have a spectral response of approximately 210 – 380 nm and are not sensitive to UV radiation outside this region. This makes them ideal detectors in certain applications for monitoring the UV spectrum without the need for solar
- Active Area Diameter or Length: 0.2660 to 1 mm
- Active Area Height: 0.2660 to 1 mm
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
- Spectral Response: UV
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Supplier: Electro Optical Components, Inc.
Description: Silicon carbide SiC photodetectors / photodiodes have a spectral response of approximately 210 – 380 nm and are not sensitive to UV radiation outside this region. This makes them ideal detectors in certain applications for monitoring the UV spectrum without the need for solar
- Operating Temperature: -25 to 85 C
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
- Spectral Response: UV
- Spectral Response Range: 315 to 395 nm
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Active Area Diameter or Length: 1 mm
- Operating Temperature: -20 to 80 C
- Photodiode Package / Mounting: Connectorized
- Quantum Efficiency: 100 %
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Spectral Response: UV
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Active Area Diameter or Length: 10 mm
- Operating Temperature: -20 to 80 C
- Photodiode Package / Mounting: Leaded
- Rise Time: 250 ns
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Supplier: Ophir-Spiricon Inc.
Description: Automatic dynamic cancellation of up to 98% of background light
- Active Area Diameter or Length: 10 mm
- Active Area Height: 10 mm
- Rise Time: 2.00E8 ns
- Spectral Response: UV, Visible, IR
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Supplier: Ophir-Spiricon Inc.
Description: Thermal head for average power from 60 um to 10 KW
- Active Area Diameter or Length: 16 mm
- Rise Time: 3.50E9 ns
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 150 to 6000 nm
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Supplier: Ophir-Spiricon Inc.
Description: Thermal head for medium power to 300 W
- Active Area Diameter or Length: 17.5 mm
- Rise Time: 1.20E9 ns
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 190 to 20000 nm
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Supplier: Micropac Industries, Inc.
Description: The 61055 is an N-P-N Planar Silicon Transistor in a package designed to be mounted in a double-clad printed circuit board. It is available in a range of sensitivities and is lensed for minimum response to stray light. High sensitivity, low dark current leakage, and low saturation voltage make this
- Dark Current: 25 nA
- Operating Temperature: -55 to 125 C
- PN, PIN, or Avalanche: PN Photodiode, PIN Photodiode
- PSD: Yes
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Supplier: Ophir-Spiricon Inc.
Description: Thermal head for high power 500 W and up
- Active Area Diameter or Length: 50 mm
- Rise Time: 2.70E9 ns
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 190 to 10600 nm
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Supplier: Photonique SA
Description: UV & blue light solidstate photon detector/counter; 2mm sensor pitch
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Array: Yes
- Dark Current: 10000 nA
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Active Area Diameter or Length: 10 mm
- Operating Temperature: -20 to 80 C
- Photodiode Package / Mounting: Leaded
- Rise Time: 250 ns
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Supplier: Photonique SA
Description: UV-blue solidstate photon detector/counter
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Dark Current: 10000 nA
- Operating Temperature: -40 to 40 C
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Supplier: Photonique SA
Description: UV-blue solidstate photon detector/counter; Non-magnetic ceramic package
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Dark Current: 10000 nA
- Operating Temperature: -40 to 40 C
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Supplier: Photonique SA
Description: UV & blue light solidstate photon detector/counter for matrix assemblies
- Active Area Diameter or Length: 2.1 mm
- Active Area Height: 2.1 mm
- Dark Current: 20000 nA
- Operating Temperature: -50 to 40 C
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Supplier: Micropac Industries, Inc.
Description: The 61010 is an N-P-N Planar Silicon Photodarlington Transistor in a small outline package designed to be housing mounted. Its large effective aperture and narrow angular response make this a highly sensitive device with minimum response to off-axis or stray light. This sensor is also available with
- Dark Current: 250 nA
- Operating Temperature: -55 to 125 C
- PN, PIN, or Avalanche: PN Photodiode, PIN Photodiode
- PSD: Yes
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Supplier: Micropac Industries, Inc.
Description: The 61056 is an N-P-N Planar Silicon Photodarlington Transistor in a package designed to be mounted in a double-clad printed circuit board and used in low light level applications. It is available in a range of sensitivities and is lensed for minimum response to stray light. High sensitivity, low
- Dark Current: 250 nA
- Operating Temperature: -55 to 125 C
- PN, PIN, or Avalanche: PN Photodiode, PIN Photodiode
- PSD: Yes
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Supplier: Micropac Industries, Inc.
Description: This is a N-P-N Planar Silicon phototransistor in a flat window TO-46 three-lead package featuring 0.040” X 0.040” sensitive area. It is available in a range of sensitivities and is ideal for use wherever system considerations dictate the use of external optics to focus radiation on the sensor.
- Dark Current: 50 nA
- Operating Temperature: -55 to 125 C
- PN, PIN, or Avalanche: PN Photodiode, PIN Photodiode
- PSD: Yes
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Supplier: Hamamatsu Photonics
Description: High UV tolerance, photodiodes for UV monitor The S12698 series are Si photodiodes that have achieved high reliability for monitoring ultraviolet light by employing a structure that does not use resin. They exhibit low sensitivity deterioration under UV light
- Active Area Diameter or Length: 1.1 mm
- Active Area Height: 1.1 mm
- Dark Current: 0.0100 nA
- Photodiode Material: Silicon
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Supplier: Hamamatsu Photonics
Description: UV to near IR for precision photometry Features - High sensitivity in UV range - Low capacitance - High reliability
- Active Area Diameter or Length: 3.6 mm
- Active Area Height: 3.6 mm
- Dark Current: 0.0500 nA
- Photodiode Material: Silicon
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Supplier: Hamamatsu Photonics
Description: High UV tolerance, photodiodes for UV monitor The S12698 series are Si photodiodes that have achieved high reliability for monitoring ultraviolet light by employing a structure that does not use resin. They exhibit low sensitivity deterioration under UV light
- Active Area Diameter or Length: 5.8 mm
- Active Area Height: 5.8 mm
- Dark Current: 0.1000 nA
- Photodiode Material: Silicon
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Supplier: DigiKey
Description: Photodiode 254nm
- Dark Current: 2 nA
- Operating Temperature: -10 to 40 C
- Photodiode Package / Mounting: Through Hole Technology (THT)
- Spectral Response: UV
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Supplier: Hamamatsu Photonics
Description: 35 element Si photodiode array for UV to NIR The S4111-35Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range
- Array: Yes
- Dark Current: 0.0100 nA
- Photodiode Material: Silicon
- Rise Time: 1200 ns
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Supplier: DigiKey
Description: Photodiode 1µs
- Dark Current: 0.5000 nA
- Operating Temperature: -40 to 105 C
- Photodiode Package / Mounting: Surface Mount Technology (SMT)
- Rise Time: 1000 ns
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Supplier: DigiKey
Description: Photodiode 550nm 100ns TO-5 Variant, 2 Leads, Lens Top Metal Can
- Operating Temperature: 0.0 to 70 C
- Photodiode Package / Mounting: Through Hole Technology (THT)
- Rise Time: 100 ns
- Sensitivity: 0.0250 A/W
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Supplier: DigiKey
Description: Photodiode 10ms Module
- Operating Temperature: -30 to 85 C
- Photodiode Package / Mounting: Other
- Rise Time: 1.00E7 ns
- Spectral Response: UV
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Supplier: OSI Optoelectronics
Description: Multichannel array photodetectors consist of a number of single element photodiodes laid adjacent to each other forming a one-dimensional sensing area common cathode substrate. They can perform simultaneous measurements of a moving beam or beams of many wavelengths. They feature low
- Active Area Diameter or Length: 4.39 mm
- Active Area Height: 0.8900 mm
- Array: Yes
- Noise Equivalent Power (NEP): 4.80E-15 W/Hz½
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Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices
… Barkad, H., Soltani, A., Mattallah, M., Gerbedoen, J., Rousseau, M., Jaeger, J. D., Moussa, A. B., Mortet, V., Haenen, K., Benbakhti, B., Moreau, M., Dupuis, R., and Ougazzaden, A., “Design, fabrication and physical analysis of tin/aln deep uv photodiodes ,” J. Phys.
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Secondary scintillation readout from GEM and THGEM with a large area avalanche photodiode
The LAAPD is a Deep UV photodiode from API, with an active diameter of 1.6 cm.
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Author index with titles (volume 43)
Benbakhti B, Moreau M, Dupuis R and Ougazzaden A: Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes 465104 Barkhudarov E M, Berezhetskaya N K, Kop’ev V A, Kossyi I A, Popov N A, Taktakishvili M I and Temchin S M …
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OSA | Applications of Robust, Radiation Hard AlGaN Optoelectronic Devices in Space Exploration and High Energy Density Physics
We report demonstration of radiation hardness and environmental robustness of AlGaN deep UV Light Emitting Diodes and deep UV Photodiodes , and their applications in space science instruments and in High Energy Density Physics diagnostics.
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Applications of robust, radiation hard AlGaN optoelectronic devices in space exploration and high energy density physics
We report demonstration of radiation hardness and environmental robustness of AlGaN deep UV Light Emitting Diodes (LEDs) and deep UV Photodiodes , and their applications in space science instruments for AC charge management, and in High Energy Density Physics diagnostics.
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Hydrogen-terminated boron-doped diamond films under intense gamma irradiation
For space or extreme radiation environment applications such as deep UV photodiode (alternatively, visible blind), medical radiotherapy, and novel nuclear micro-battery [3-6], it is of utmost importance to demonstrate the influence of radiation on materials' structural integrity as well as …
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Semiconductor ultraviolet photodetectors based on ZnO and MgxZn1−xO
These results prove that high-performance Schottky-type deep - UV photodiodes can be fulfilled with heteroepitaxial W − MgxZn1−xO films.
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DSpace@MIT: Deep UV photon-counting detectors and applications
Recently, DARPA has initiated a program called Deep UV Avalanche Photodiode (DUVAP) to develop semiconductor alternatives to PMTs for use in the deep UV.
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http://dspace.mit.edu/openaccess-disseminate/1721.1/52687
Recently, DARPA has initiated a program called Deep UV Avalanche Photodiode (DUVAP) to develop semiconductor alternatives to PMTs for use in the deep UV.
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DSpace@MIT: Deep UV photon-counting detectors and applications
Recently, DARPA has initiated a program called Deep UV Avalanche Photodiode (DUVAP) to develop semiconductor alternatives to PMTs for use in the deep UV.