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Supplier: DigiKey
Description: Photodiode 254nm
- Operating Temperature: -10 to 40 C
- Dark Current: 2 nA
- Photodiode Package: Through Hole Technology (THT)
- Photodiode Spectral Response: UV
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Supplier: Hamamatsu Photonics Europe
Description: 16 element Si photodiode array for UV to NIR The S4111-16Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range
- Sensitivity: 0.58 A/W
- Spectral Response Range: 190 to 1,100 nm
- Rise Time: 500 ns
- Dark Current: 0.005 nA
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Supplier: Hamamatsu Photonics Europe
Description: For UV to IR, precision photometry Features - High UV sensitivity: QE 75% (λ=200 nm) - Low capacitance
- Sensitivity: 0.5 A/W
- Spectral Response Range: 190 to 1,100 nm
- Active Area Diameter or Length: 10.000000000000002 mm
- Active Area Height: 10.000000000000002 mm
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Supplier: RS Components, Ltd.
Description: Silicon PIN Photodiode
- Spectral Response Range: 380 nm
- Photodiode Spectral Response: IR, UV, Visible
- Features: Other
- Photodiode Type: PIN Photodiode
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Supplier: Hamamatsu Photonics Europe
Description: Quadrant Si PIN photodiode The S4349 is a quadrant Si PIN photodiode having sensitivity in the UV to near IR spectral range. A quadrant element format allows position sensing such as for laser beam axis alignment.
- Sensitivity: 0.45 A/W
- Spectral Response Range: 190 to 1,000 nm
- Dark Current: 0.2 nA
- Array: Array
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Supplier: Electro Optical Components, Inc.
Description: damaging photodiodes during soldering and cleaning, consider using sockets. SiC photodiodes features & types High responsivity – 0.13 A/W peak UV radiation hardness Cost effective standard sizes Low temperature coefficient Built in Preamplifiers optional UV A, B, C, BC &
- Sensitivity: 0.13 A/W
- Spectral Response Range: 205 to 395 nm
- Active Area Diameter or Length: 0.10000000000000002 to 2.525 mm
- Active Area Height: 5.1000000000000005 mm
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Supplier: Electro Optical Components, Inc.
Description: damaging photodiodes during soldering and cleaning, consider using sockets. SiC photodiodes features & types High responsivity – 0.13 A/W peak UV radiation hardness Cost effective standard sizes Low temperature coefficient Built in Preamplifiers optional UV A, B, C, BC &
- Spectral Response Range: 210 to 380 nm
- Active Area Diameter or Length: 0.25 to 3.3000000000000003 mm
- Active Area Height: 0.25 to 3.3000000000000003 mm
- Photodiode Package: Leaded, Through Hole Technology (THT)
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Supplier: Electro Optical Components, Inc.
Description: 180 VDC. These SiC UV APDs are a solid state replacement for UV PMTs (Photo Multiplier Tubes). Besides responding only to the UV, the tough silicon carbide (SiC) provides: Stability in high energy UV applications Higher temperature stability than silicon The general
- Active Area Diameter or Length: 0.0044 mm
- Photodiode Type: Avalanche Photodiode
- Features: Other
- Photodiode Material: Silicon Carbide
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Supplier: Electro Optical Components, Inc.
Description: damaging photodiodes during soldering and cleaning, consider using sockets. SiC photodiodes features & types High responsivity – 0.13 A/W peak UV radiation hardness Cost effective standard sizes Low temperature coefficient Built in Preamplifiers optional UV A, B, C, BC &
- Spectral Response Range: 315 to 395 nm
- Operating Temperature: -25 to 85 C
- Photodiode Package: Leaded, Through Hole Technology (THT)
- Photodiode Spectral Response: UV
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. Inversion layer
- Sensitivity: 0.14 A/W
- Spectral Response Range: 200 to 1,100 nm
- Active Area Diameter or Length: 6.6000000000000005 mm
- Active Area Height: 5.33 mm
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Supplier: Ophir-Spiricon Inc.
Description: General use for large aperture pulsed lasers
- Spectral Response Range: 150 to 20,000 nm
- Active Area Diameter or Length: 46.00000000000001 mm
- Photodiode Spectral Response: IR, UV, Visible
- Features: Other
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Supplier: Micropac Industries, Inc.
Description: The 61055 is an N-P-N Planar Silicon Transistor in a package designed to be mounted in a double-clad printed circuit board. It is available in a range of sensitivities and is lensed for minimum response to stray light. High sensitivity, low dark current leakage, and low saturation voltage make this
- Sensitivity: 100 A/W
- Spectral Response Range: 290 to 1,200 nm
- Operating Temperature: -55 to 125 C
- Dark Current: 25 nA
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Photodiode Spectral Response: UV
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Supplier: Photonique SA
Description: No Description Provided
- Spectral Response Range: 350 to 800 nm
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Rise Time: 1.8 ns
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics' 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens. Over a wide range of sensitivity
- Spectral Response Range: 200 to 1,100 nm
- Active Area Diameter or Length: 6.78 mm
- Active Area Height: 5.59 mm
- Operating Temperature: -20 to 60 C
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Supplier: Ophir-Spiricon Inc.
Description: Automatic dynamic cancellation of up to 98% of background light
- Spectral Response Range: 200 to 1,100 nm
- Active Area Diameter or Length: 10.000000000000002 mm
- Active Area Height: 10.000000000000002 mm
- Rise Time: 200,000,000 ns
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Supplier: Photonique SA
Description: No Description Provided
- Spectral Response Range: 350 to 950 nm
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Rise Time: 5 ns
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Active Area Diameter or Length: 2 to 5.000000000000001 mm
- Rise Time: 500 ns
- Quantum Efficiency: 100 %
- Operating Temperature: -20 to 80 C
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Supplier: Ophir-Spiricon Inc.
Description: Thermal head for average power from 60 um to 10 KW
- Spectral Response Range: 190 to 20,000 nm
- Active Area Diameter or Length: 29.000000000000004 mm
- Rise Time: 1,500,000,000 ns
- Photodiode Spectral Response: IR, UV, Visible
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Supplier: OSI Optoelectronics
Description: standard parts. PIN-005D-254F- is a 6 mm2 active area, UV enhanced photodiode-filter combination which utilizes a narrow bandpass filter peaking at 254 nm.
- Sensitivity: 0.025 A/W
- Spectral Response Range: 200 to 300 nm
- Active Area Diameter or Length: 2.4000000000000004 mm
- Active Area Height: 2.4000000000000004 mm
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Supplier: Photonique SA
Description: No Description Provided
- Spectral Response Range: 310 to 850 nm
- Active Area Diameter or Length: 2.1 mm
- Active Area Height: 2.1 mm
- Rise Time: 0.6 ns
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Supplier: OSI Optoelectronics
Description: Multichannel array photodetectors consist of a number of single element photodiodes laid adjacent to each other forming a one-dimensional sensing area common cathode substrate. They can perform simultaneous measurements of a moving beam or beams of many wavelengths. They feature low
- Sensitivity: 0.5 A/W
- Spectral Response Range: 200 to 1,100 nm
- Active Area Diameter or Length: 6.449999999999999 mm
- Active Area Height: 0.28 mm
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Supplier: Ophir-Spiricon Inc.
Description: Thermal head for medium power to 300 W
- Spectral Response Range: 250 to 2,940 nm
- Active Area Diameter or Length: 29.000000000000004 mm
- Rise Time: 1,500,000,000 ns
- Photodiode Spectral Response: IR, UV, Visible
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Active Area Diameter or Length: 1 mm
- Rise Time: 0.7 ns
- Quantum Efficiency: 100 %
- Operating Temperature: -20 to 80 C
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Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices
… Barkad, H., Soltani, A., Mattallah, M., Gerbedoen, J., Rousseau, M., Jaeger, J. D., Moussa, A. B., Mortet, V., Haenen, K., Benbakhti, B., Moreau, M., Dupuis, R., and Ougazzaden, A., “Design, fabrication and physical analysis of tin/aln deep uv photodiodes ,” J. Phys.
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Secondary scintillation readout from GEM and THGEM with a large area avalanche photodiode
The LAAPD is a Deep UV photodiode from API, with an active diameter of 1.6 cm.
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Author index with titles (volume 43)
Benbakhti B, Moreau M, Dupuis R and Ougazzaden A: Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes 465104 Barkhudarov E M, Berezhetskaya N K, Kop’ev V A, Kossyi I A, Popov N A, Taktakishvili M I and Temchin S M …
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OSA | Applications of Robust, Radiation Hard AlGaN Optoelectronic Devices in Space Exploration and High Energy Density Physics
We report demonstration of radiation hardness and environmental robustness of AlGaN deep UV Light Emitting Diodes and deep UV Photodiodes , and their applications in space science instruments and in High Energy Density Physics diagnostics.
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Applications of robust, radiation hard AlGaN optoelectronic devices in space exploration and high energy density physics
We report demonstration of radiation hardness and environmental robustness of AlGaN deep UV Light Emitting Diodes (LEDs) and deep UV Photodiodes , and their applications in space science instruments for AC charge management, and in High Energy Density Physics diagnostics.
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Hydrogen-terminated boron-doped diamond films under intense gamma irradiation
For space or extreme radiation environment applications such as deep UV photodiode (alternatively, visible blind), medical radiotherapy, and novel nuclear micro-battery [3-6], it is of utmost importance to demonstrate the influence of radiation on materials' structural integrity as well as …
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Semiconductor ultraviolet photodetectors based on ZnO and MgxZn1−xO
These results prove that high-performance Schottky-type deep - UV photodiodes can be fulfilled with heteroepitaxial W − MgxZn1−xO films.
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DSpace@MIT: Deep UV photon-counting detectors and applications
Recently, DARPA has initiated a program called Deep UV Avalanche Photodiode (DUVAP) to develop semiconductor alternatives to PMTs for use in the deep UV.
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http://dspace.mit.edu/openaccess-disseminate/1721.1/52687
Recently, DARPA has initiated a program called Deep UV Avalanche Photodiode (DUVAP) to develop semiconductor alternatives to PMTs for use in the deep UV.
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DSpace@MIT: Deep UV photon-counting detectors and applications
Recently, DARPA has initiated a program called Deep UV Avalanche Photodiode (DUVAP) to develop semiconductor alternatives to PMTs for use in the deep UV.