Products & Services
See also: Categories | Featured Products | Technical Articles | More Information-
Supplier: Infineon Technologies AG
Description: regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GS(th) indicator on the reel. Summary of Features Depletion mode dv/dt rated Available with V GS(th) indicator on the reel
- VGS(off): -2.1 to -1 volts
- rDS(on): 6 ohms
- TJ: -55 to 150 C
- MOSFET Operating Mode: Depletion
-
Supplier: Microchip Technology, Inc.
Description: The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input
- VGS(off): 0.8 to -3 volts
- rDS(on): 1.4 ohms
- Features: MOSFET
- Polarity: N-Channel
-
Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 4 N-Channel, Matched Pair 10.6V 12mA, 3mA 500mW Surface Mount 16-SOIC
- V(BR)DSS: 10 volts
- IDSS: 3 milliamps
- rDS(on): 75 ohms
- TJ: 0 to 70 C
-
-
Supplier: Utmel Electronic Limited
Description: MOSFET D2 Depletion Mode Power MOSFETs
- rDS(on): 0.064 ohms
- QG: 224.99999999999997 nC
- PD: 830,000 milliwatts
- TJ: -55 to 175 C
-
Supplier: Newark, An Avnet Company
Description: DEPLETION MODE MOSFET, 240V, 120mA, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:240V; Continuous Drain Current Id:120mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.7W RoHS Compliant: Yes
-
Supplier: Utmel Electronic Limited
Description: MOSFET N-CHANNEL DEPLETION MODE
- rDS(on): 3.5 ohms
- TJ: -55 to 150 C
- Number of Transistors in the Chip: 1
- Features: MOSFET, Other
-
Supplier: Littelfuse, Inc.
Description: Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like characteristics. They are suitable for level
- Polarity: N-Channel
- Features: Other
- Package Type: TO-263
-
Supplier: Littelfuse, Inc.
Description: As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and
- Polarity: N-Channel
- Features: Other
- Package Type: TO-247
-
Supplier: RS Components, Ltd.
Description: MOSFET, DEPLETION-MODE, 400V, 25 Ohm
- MOSFET Operating Mode: Depletion
- Features: MOSFET, Other
-
Supplier: VAST STOCK CO., LIMITED
Description: MOSFET DepletionMode MOSFET
- Features: MOSFET
-
Supplier: Rochester Electronics
Description: 60V-600V N-Channel Depletion Mode MOSFET
- MOSFET Operating Mode: Depletion
- Features: MOSFET, Other
- Polarity: N-Channel
- Packing Method: Tape Reel
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: MOSFETs N-Ch Depletion Mode Vertical DMOS FET Product overview: CPC3982TTR from IXYS Integrated Circuits is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and
- PD: 400 milliwatts
- MOSFET Operating Mode: Depletion
- Features: MOSFET, Other
- Polarity: N-Channel
-
Supplier: Win Source Electronics
Description: Win Source Part Number: 1346741-IXTT20N50D Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Depletion Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature:
- PD: 400,000 milliwatts
- TJ: -55 to 150 C
- MOSFET Operating Mode: Depletion
- Features: MOSFET
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: MOSFETs N Ch Dep Mode FET 350V Product overview: CPC5602CTR from IXYS Integrated Circuits is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing
- PD: 2.5 milliwatts
- MOSFET Operating Mode: Depletion
- Features: MOSFET, Other
- Polarity: N-Channel
-
Supplier: Microchip Technology, Inc.
Description: The HV9967B is an average-mode current control LED driver IC operating in a constant off-time mode. The IC features an integrated 60V, 0.8Ω MOSFET that can be used as a stand-alone buck converter switch, or connected as a source driver for driving an external high-voltage
- Features: RoHS Compliant
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode / Trans RF MOSFET N-CH 20V 0.03A Product overview: BF995 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power
- Features: MOSFET
-
Supplier: Infineon Technologies AG
Description: 500V-950V CoolMOS™ N-Channel Power MOSFET BSS126I | N-Channel Depletion Mode MOSFET BSS126 | N-Channel Depletion Mode MOSFET IPD135N08N3 G | N-Channel Power MOSFET IPD80R600P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSS126I |
- Type: Constant Voltage
- Form Factor: Integrated Circuit (IC)
- Features: RoHS Compliant
-
Supplier: ASTM International
Description: 1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current. Note 1-MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor. 1.2 The test method is applicable to all enhancement-mode and depletion-mode
-
Supplier: ASTM International
Description: 1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current. Note 1-MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor. 1.2 This test method is applicable to all enhancement-mode and depletion-mode
-
Supplier: ASTM International
Description: acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor. 1.2 This test method is applicable to both enhancement-mode and depletion-mode MOSFETs, and for both silicon-on-insulator (SOI) and bulk-silicon MOSFETs. The test method specifies
-
Supplier: Infineon Technologies AG
Description: Applications Light electric vehicles (LEV) Designers who used this product also designed with IPB072N15N3 G | N-Channel Power MOSFET BSS169 | N-Channel Depletion Mode MOSFET IRFR2407 | N-Channel Power MOSFET IPB072N15N3 G | N-Channel Power MOSFET BSS169 |
- Peak Output Current: 0.25 amps
- Supply Voltage: 10 to 20 volts
- Propagation Delay: 150 ns
- Driver Type: High-side Gate Driver
-
Supplier: Infineon Technologies AG
Description: drones Power tools Designers who used this product also designed with ISC010N04NM6 | N-Channel Power MOSFET BSP129 | N-Channel Depletion Mode MOSFET ISC010N04NM6 | N-Channel Power MOSFET BSP129 | N-Channel Depletion Mode MOSFET ISC010N04NM6 |
- Supply Voltage: 8 to 125 volts
- Driver Type: High-side Gate Driver
- Features: Other
- Packing Method: Tape Reel
-
Supplier: Integra Technologies, Inc.
Description: ■ GaN on SiC HEMT Technology ■ POUT-PK = 1000W @ ELM Mode S / 6.4% / 50V; (PAVG = 64W) ■ 1.030GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation
- Power Gain: 17 dB
- Output Power: 1,000 watts
- Operating Frequency: 1,030 MHz
- Features: MOSFET RF Transistors, Other, Power BJT Transistors
-
Supplier: Microchip Technology, Inc.
Description: start-up, thereby reducing the continuous power dissipation to a few milliwatts. The adjustable voltage version allows trimming of the output voltage from 8.0 to 12V. This version can also be connected to an external depletion mode MOSFET for increased output current. When used
- Features: Other
- Package Type: SOIC / SOP, SOT89, TO-220
-
Supplier: Win Source Electronics
Description: SC-59, SOT-23-3 Manufacturer Device Package: PG-SOT23-3 FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V Vgs(th) (Max) @ Id:
Find Suppliers by Category Top
Featured Products Top
-
Announcing the launch of e-mode GaN FETs for low & high voltage applications. Nexperia’s new portfolio includes two ≤ 150 V rated devices (3.2 mΩ and 7 mΩ) in WLCSP8 and FCLGA packages, as well as five 650 V (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
is well-suited for applications requiring low input bias current, low input capacitance, and fast switching speed. The device exhibits enhancement mode characteristics at VGS > 0.00V while operating in the subthreshold voltage region with conventional depletion mode characteristics at VGS < 0 (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
technologies with wider cell pitch when operating in linear mode. The MOSFET must be able to handle a current proportional to the number of squibs in the system, whilst regulating their supply voltage for long enough to activate the airbags. Nexperia have designed a range of Application Specific MOSFETS (ASFETs) to address the specialised needs of airbag applications, focused on enhanced SOA performance for improved linear mode. (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
The ALD1116 from Advanced Linear Devices is a dual N-channel enhancement-mode MOSFET array designed for precision in analog circuits. It excels in low-frequency and near-DC conditions, making it ideal for a broad range of analog applications. The device features (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD1107 MOSFET is a high-precision P-channel MOSFET transistor array by Advanced Linear Devices. Its low threshold voltage of -0.7V, low input capacitance, and typical offset voltage of only 2mV make it ideal for analog switching and amplifying (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
bandgap semiconductors and copper-clip packaging. This technology offers advantages for renewable energy applications such as solar and residential heat pumps, further enhancing Nexperia’s commitment to developing the latest component technology for sustainable applications. It is also suited to a wide spectrum of industrial applications such as servo drives, switched-mode power supplies (SMPS), server, and telecom. (read more)
Browse Power MOSFET Datasheets for Nexperia B.V. -
The ALD810025 by Advanced Linear Devices is a member of the ALD8100xx family of Supercapacitor Auto Balancing (SAB™) MOSFETs. It excels in voltage and leakage-current regulation for series-connected supercapacitors. By integrating one or more devices across (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
, resulting in minimal power loss. By effectively balancing series and parallel-connected supercaps, these MOSFETs provide a reliable solution for a wide range of applications. Featuring a precision gate threshold voltage in the Vt mode, the SAB MOSFETs ensure accurate voltage regulation. When (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The MSCSICPFC/REF5 is a 3-phase Vienna PFC reference design for Hybrid Electric Vehicle/Electric Vehicle (HEV/EV) charger and high-power switch mode power supply applications. This reference design achieves 98.6% efficiency at 30 kW output power. PLECS Model Available (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
Wolfspeed offers a new family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as solar and energy storage systems, EV charging, Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, high (read more)
Browse Power MOSFET Datasheets for Richardson RFPD
Conduct Research Top
-
An Introduction to Depletion-mode MOSFETs
switches and CMOS. By contrast, the depletion-mode MOSFET has not received the same attention or popularity over this time, despite being the oldest member of the MOSFET family. It does have some rather unique characteristics though, which cannot be easily replicated by other means. This article
-
Performance Characteristics of EPAD (R) Precision Matched Pair MOSFET Array
and zero threshold transistors, ALD EPAD technology. enables the same well controlled turn-off, subthreshold, and low. leakage characteristics as standard enhancement mode MOSFETs
-
New Design Concepts in Ultra Low Voltage and Nanopower Circuits with EPAD MOSFET Arrays
This introduction to EPAD MOSFET describes a broad selection of devices with precisely set gate threshold voltage values, including zero threshold mode, enhancement mode and depletion mode. Furthermore, novel circuit designs are presented to illustrate how these devices can be used at a practical
More Information Top
Indicates content that may require registration and/or purchase.
-
http://dspace.mit.edu/bitstream/handle/1721.1/34219/Fonstad_MicroelecDevCkt_2006EEd.pdf?sequence=1
To turn a depletion mode MOSFET “off,” a bias must be applied that forces the surface out of inversion and into depletion, We will now turn to developing a quantitative model describing the MOSFET operation just outlined.
-
Fundamentals of III-V Semiconductor MOSFETs
enhancement and depletion mode MOSFETs made of InAs [4].
-
Advanced Gate Stacks for High-Mobility Semiconductors
Depletion mode MOSFETs with Dit < 1012 cm−2 eV−1 were re- cently fabricated by ALD Al2O3 onto native oxide covered GaAs [23, 24].
-
Operation and Modeling of the MOS Transistor
F. H. Gaensslen and K. C. Jaeger, “Temperature dependent threshold behavior of depletion mode MOSFETs ,” Solid-State Electronics, vol.
-
http://repositories.lib.utexas.edu/bitstream/handle/2152/17914/kimh14697.pdf?sequence=2
semi-insulating substrate with high resistivity in general, thus depletion mode MOSFETs .
-
http://repositories.lib.utexas.edu/bitstream/handle/2152/3974/oki43579.pdf?sequence=2
We have demonstrated depletion mode MOSFET using optimum capacitance condition .
-
Fabrication of depletion-mode GaAs MOSFET with a selective oxidation process by using metal as the mask
Fig. 2 shows the typical drain I–V characteristics of the n-channel depletion mode MOSFET for a gate oxide thickness of 35 nm.
-
Depletion-mode GaAs MOSFET with a low temperature selective grown oxide gate
Fig. 3(a) shows the typical drain I-V characteristics of the n-channel depletion mode MOSFET with a gate oxide thickness of 35 nm.
-
Potential and electron distribution model for the buried-channel MOSFET
[lo] M. R. Wordeman, “Characteristics of depletion mode MOSFET ’s,” .
-
Electronics from the Ground Up: Learn by Hacking, Designing, and Inventing > High School Mathematics with Electronics
See an example parabolic curve of a depletion mode MOSFET in Figure 14-12.