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Supplier: Qorvo
Description: -State Power Amplifier (SSPA) performance in a rugged, compact size and weight which reduces total cost of ownership compared to alternative technologies. This product offering combines Qorvo’s market leadership in GaN technology and wideband MMIC design along with our
- Applications: Military / Defense
- Frequency Range: 2000 to 18000 MHz
- Maximum Operating Voltage: 18 volts
- Minimum Operating Voltage: 18 volts
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Supplier: Qorvo
Description: size and weight which reduces total cost of ownership compared to alternative technologies. This product offering combines Qorvo’s market leadership in GaN technology and wideband MMIC design along with our high-count combining techniques for a best in class solution to power
- Applications: Military / Defense, Radar Systems
- Frequency Range: 32000 to 38000 MHz
- Maximum Operating Voltage: 24 volts
- Minimum Operating Voltage: 24 volts
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Supplier: Qorvo
Description: cost of ownership compared to alternative technologies. This product offering combines Qorvo’s market leadership in GaN technology and wideband MMIC design along with our high-count combining techniques for a best in class solution to power amplification. The QPB2040N is
- Applications: Military / Defense, Radar Systems
- Frequency Range: 18000 to 40000 MHz
- Maximum Operating Voltage: 18 volts
- Minimum Operating Voltage: 18 volts
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Supplier: Qorvo
Description: total cost of ownership compared to alternative technologies. This product offering combines Qorvo’s market leadership in GaN technology and wideband MMIC design along with our high-count combining techniques for a best in class solution to power amplification. The QPB1840N is
- Applications: Military / Defense, Radar Systems
- Frequency Range: 18000 to 40000 MHz
- Maximum Operating Voltage: 18 volts
- Minimum Operating Voltage: 18 volts
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Supplier: Custom MMIC
Description: The CMD184 is a 4.5 W wideband GaN MMIC power amplifier die which operates from 0.5 to 20 GHz. The amplifier delivers greater than 13 dB of gain with a corresponding output 1 dB compression point of +34.5 dBm and a saturated output power of +36.5 dBm. The
- Amplifier Type: Power Amplifier
- Frequency Range: 500 to 20000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 13 dB
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Supplier: DigiKey
Description: GAN WIDEBAND POWER AMPLIFIER ICS
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 300 to 6000 MHz
- Maximum Gain: 33 dB
- Maximum Operating Voltage: 28 volts
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Supplier: Richardson RFPD
Description: Gallium Nitride 28V, 5W, 20-1500 MHz Amplifier. The NPA1003 is a wideband, internally-matched, GaN power amplifier optimized for 20-1500 MHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels exceeding 5W
- Operating Frequency: 20 to 1500 MHz
- Output Power: 5 watts
- Package Type: Other
- Power Gain: 18 dB
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Supplier: Richardson RFPD
Description: The NPA1007 is a wideband GaN power amplifier optimized for 20 - 2500 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 10 W (40 dBm) assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package. The NPA1007
- Package Type: Other
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Supplier: Richardson RFPD
Description: The NPA1003 is a wideband, internally-matched, GaN MMIC power amplifier optimized for 20-1500 MHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels exceeding 5W (37 dBm) in an industry standard, surface mount,
- Operating Frequency: 20 to 1500 MHz
- Output Power: 5 watts
- Package Type: Other
- Power Gain: 18 dB
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Supplier: Richardson RFPD
Description: Narrowband and broadband amplifiers Radar Jammers EMC testing Public mobile radios, including emergency service radios Industrial, scientific and medical Wideband laboratory amplifiers Wireless cellular infrastructure
- Operating Frequency: 30 to 2200 MHz
- Output Power: 125 watts
- Package Type: Other
- Power Gain: 18 dB
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The QPA9510 is a high-power, high-gain, high-efficiency power amplifier. The device is manufactured with Qorvo’s advanced GaAs process. The amplifier provides 34dB of max gain and able to achieve +32dBm of P1dB along with flexibility in bias settings. QPA9510 is designed for use as (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
High-Power, Wide-Band Performance Designed for demanding laboratory and industrial environments, the VSA-D Series delivers up to 1000 kVA output with a (read more)
Browse Shock and Vibration Testing Shakers Datasheets for ECON Technologies Co.,Ltd -
Qorvo's QPA2597 is a packaged driver amplifier using proven GaN on SiC technology. The QPA2597 operates from 2.0 to 6.0GHz and provides 32 dBm of output with 24 dB of small signal gain and 37 % power-added efficiency. Using GaN MMIC technology and plastic packaging, the QPA2597 provides (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA2811 is a packaged, high-power X-band amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 8.5?-?10.55 GHz, the QPA2811 provides 48.9 dBm of saturated output power and 27.9 dB of large-signal gain while achieving 48.5 % power (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
The family of RF GaN-on-SiC Ka-Band amplifiers covers power levels from 33 to 44 dBm, and are available in die or QFN-package formats. These devices are fabricated on the proprietary UMS GH15 GaN process, which is optimized up to 42 GHz, delivering high power, high PAE and high linearity, and making it ideal for transmitting modulated waveforms. (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Macom's CMPA851A MMIC High Power Amplfier family (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Qorvo's QPA4003 is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating from 26.5 to 29.5 GHz, it achieves 1.25 W linear power with lower than −33 dBc intermodulation distortion products and 29 dB small signal gain. Saturated output power is greater (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1314 is a packaged high power MMIC amplifier, fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). QPA1314 is targeted for 13.75 – 14.5 GHz Satcom band. Linear power is 20 W with 25 dBc third order intermodulation distortion products. It (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1111 is a high power, packaged X-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1111 operates from 8.5 – 10.5 GHz, typically provides 30 W saturated output power with power-added efficiency of 45% and small signal (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1724D is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1724D targets the 17.3 – 21.2 GHz Satcom band providing 5 Watts of linear power with third-order intermodulation distortion products of 22 d (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo
More Information Top
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11.21.11 -- MILCOM 2011 Post-Show Report
RFMD introduced three new GaN wideband power amplifiers for continuous wave and pulsed applications.
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EuMIC 2012 detailed author index
C 70–105GHz Wideband GaN Power Amplifiers (EuMIC12-1) .
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Analog Circuit Design
Fig. 14.4 Simulated hybrid PA setup with two 60 W wideband GaN power amplifiers and hybrid couplers designed for multiband operation .
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Book of abstracts
70–105GHz Wideband GaN Power Amplifiers .
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EuMIC 2012 abstract cards
70–105GHz Wideband GaN Power Amplifiers .
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The application analysis of GaN power devices in Radar transmitter
The wideband GaN power amplifier described in this paper is intended to be used in Radar transmitter system, the specifications for the amplifier is shown in Table 3.
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Truly wideband linearization
The authors also gratefully acknowledge past support from the Office of Naval Research (ONR), particularly work under the contracts N00014-03-C-0142, “Linearization of Wideband GaN Power Amplifiers ” and N00014-01- M-0109, “Digital Compensation for Distortion,” which provided…
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Circuit and EM modeling of wideband high power VHF/UHF combiners
His current research interests include LINC system, wideband GaN power amplifier , and UWB radar system.
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Combined control of drain video bandwidth and stability margins in power amplifiers for envelope tracking applications
It is a wideband GaN power amplifier in which observation ports have been built in the bias lines.
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