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Supplier: Qorvo
Description: An excellent alternative to traveling wave tube amplifiers, Qorvo's Spatium® QPR3238 is an integrated solid state, spatial-combining amplifier and driver amplifier with an operating range of 32–38 GHz while achieving 51.5 dBm (CW) of instantaneous saturated power. With
- Frequency Range: 32,000 to 38,000 MHz
- Minimum Operating Voltage: 24 volts
- Maximum Operating Voltage: 24 volts
- Amplifier Type: Power Amplifier
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Supplier: Qorvo
Description: An excellent alternative to traveling wave tube amplifiers, Qorvo's Spatium® QPB1840N is a solid state, spatial combining amplifier with an operating range of 18–40 GHz. With its maximum performance in output power, gain, power added efficiency, and power flatness,
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Supplier: Custom MMIC
Description: The CMD184 is a 4.5 W wideband GaN MMIC power amplifier die which operates from 0.5 to 20 GHz. The amplifier delivers greater than 13 dB of gain with a corresponding output 1 dB compression point of +34.5 dBm and a saturated output power of +36.5 dBm. The
- Frequency Range: 500 to 20,000 MHz
- Minimum Gain: 13 dB
- Maximum Gain: 13 dB
- Output Power( P1dB): 34.49999999999999 dBm
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Supplier: Qorvo
Description: The QPB0618J is a solid state driver amplifier based on GaN MMIC technology, with an operating range of 2 - 18 GHz with a saturated output power of 45 dBm (32 Watts). Its compact size and weight allow it to be used to drive a number of Spatium power amplifiers in
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Supplier: Qorvo
Description: Qorvo's QPA0106 is a wideband power amplifier fabricated using Qorvo's QGaN25 0.25 um GaN on SiC production process. Covering 1 - 6 GHz, the QPA0106 provides 42.7 dBm of saturated output power. The QPA0106 is 100% DC and RF tested to ensure compliance to electrical
- Frequency Range: 1,000 to 6,000 MHz
- Minimum Gain: 33.7 dB
- Maximum Gain: 33.7 dB
- Amplifier Type: Power Amplifier
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Supplier: DigiKey
Description: GAN WIDEBAND POWER AMPLIFIER ICS
- Frequency Range: 300 to 6,000 MHz
- Minimum Gain: 33 dB
- Maximum Gain: 33 dB
- Minimum Operating Voltage: 28 volts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: RF Amplifier GaN Wideband Power Amplifier ICs Product overview: ADPA1116ACGZN from Analog Devices Inc. is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers
- Supply Voltage (VS): 28 volts
- Features: Other
- Standards: RoHS Compliant
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: GaN Wideband Power Amplifier, 28 V, 5 W 20 - 2700 MHz Product overview: NPA1008 from M/A-Com Technology Solutions is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for
- Features: Other
- Standards: RoHS Compliant
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The QPA9510 is a high-power, high-gain, high-efficiency power amplifier. The device is manufactured with Qorvo’s advanced GaAs process. The amplifier provides 34dB of max gain and able to achieve +32dBm of P1dB along with flexibility in bias settings. QPA9510 is designed for use as (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
High-Power, Wide-Band Performance Designed for demanding laboratory and industrial environments, the VSA-D Series delivers up to 1000 kVA output with a (read more)
Browse Shock and Vibration Testing Shakers Datasheets for ECON Technologies Co.,Ltd -
Qorvo's QPA2597 is a packaged driver amplifier using proven GaN on SiC technology. The QPA2597 operates from 2.0 to 6.0GHz and provides 32 dBm of output with 24 dB of small signal gain and 37 % power-added efficiency. Using GaN MMIC technology and plastic packaging, the QPA2597 provides (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA2811 is a packaged, high-power X-band amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 8.5?-?10.55 GHz, the QPA2811 provides 48.9 dBm of saturated output power and 27.9 dB of large-signal gain while achieving 48.5 % power (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
The family of RF GaN-on-SiC Ka-Band amplifiers covers power levels from 33 to 44 dBm, and are available in die or QFN-package formats. These devices are fabricated on the proprietary UMS GH15 GaN process, which is optimized up to 42 GHz, delivering high power, high PAE and high linearity, and making it ideal for transmitting modulated waveforms. (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Macom's CMPA851A MMIC High Power Amplfier family (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Qorvo's QPA4003 is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating from 26.5 to 29.5 GHz, it achieves 1.25 W linear power with lower than −33 dBc intermodulation distortion products and 29 dB small signal gain. Saturated output power is greater (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1314 is a packaged high power MMIC amplifier, fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). QPA1314 is targeted for 13.75 – 14.5 GHz Satcom band. Linear power is 20 W with 25 dBc third order intermodulation distortion products. It (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1111 is a high power, packaged X-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1111 operates from 8.5 – 10.5 GHz, typically provides 30 W saturated output power with power-added efficiency of 45% and small signal (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1724D is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1724D targets the 17.3 – 21.2 GHz Satcom band providing 5 Watts of linear power with third-order intermodulation distortion products of 22 d (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo
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11.21.11 -- MILCOM 2011 Post-Show Report
RFMD introduced three new GaN wideband power amplifiers for continuous wave and pulsed applications.
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EuMIC 2012 detailed author index
C 70–105GHz Wideband GaN Power Amplifiers (EuMIC12-1) .
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Analog Circuit Design
Fig. 14.4 Simulated hybrid PA setup with two 60 W wideband GaN power amplifiers and hybrid couplers designed for multiband operation .
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Book of abstracts
70–105GHz Wideband GaN Power Amplifiers .
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EuMIC 2012 abstract cards
70–105GHz Wideband GaN Power Amplifiers .
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The application analysis of GaN power devices in Radar transmitter
The wideband GaN power amplifier described in this paper is intended to be used in Radar transmitter system, the specifications for the amplifier is shown in Table 3.
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Truly wideband linearization
The authors also gratefully acknowledge past support from the Office of Naval Research (ONR), particularly work under the contracts N00014-03-C-0142, “Linearization of Wideband GaN Power Amplifiers ” and N00014-01- M-0109, “Digital Compensation for Distortion,” which provided…
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Circuit and EM modeling of wideband high power VHF/UHF combiners
His current research interests include LINC system, wideband GaN power amplifier , and UWB radar system.
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Combined control of drain video bandwidth and stability margins in power amplifiers for envelope tracking applications
It is a wideband GaN power amplifier in which observation ports have been built in the bias lines.