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Supplier: Qorvo
Description: Qorvo's TQL9066 is a high linearity, ultra low noise figure dual device amplifier in a 4x4 mm package. At 830 MHz in a balanced configuration, the LNA provides 18.4 dB gain, 22 dBm IIP3 and 0.62 dB noise figure. The part does not require a negative supply for
- Frequency Range: 50 to 1,500 MHz
- Minimum Gain: 18.4 dB
- Maximum Gain: 18.4 dB
- Output Power( P1dB): 21.4 dBm
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Supplier: Qorvo
Description: Qorvo's TQP3M9041 is a high linearity, ultra low noise figure dual device amplifier in a 4x4 mm package. At 1.95 GHz in a balanced configuration, the LNA provides 18.4 dB gain, 20 dBm IIP3 and 0.80 dB noise figure. The part does not require a negative supply for
- Frequency Range: 2,300 to 6,000 MHz
- Minimum Gain: 18.4 dB
- Maximum Gain: 18.4 dB
- Output Power( P1dB): 22.5 dBm
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Supplier: Qorvo
Description: Qorvo's TQP3M9040 is a high linearity, ultra low noise figure dual device amplifier in a 4x4 mm package. At 1.95 GHz in a balanced configuration, the LNA provides 18 dB gain, 22 dBm IIP3 and 0.67 dB noise figure. The part does not require a negative supply for
- Frequency Range: 1,500 to 2,300 MHz
- Minimum Gain: 18 dB
- Maximum Gain: 18 dB
- Output Power( P1dB): 20.8 dBm
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Supplier: Networks International Corporation
Description: NIC introduces its Wideband LNA designed for C Band, Radar and Satcom applications. This amplifier operates in the frequency range of 4 GHz - 5 GHz, providing high gain, low Noise Figure and is built in an extremely small package size of 1.2 x 0.9 x 0.4 in. Features: 1)
- Amplifier Type: Low Noise Amplifier
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Supplier: Qorvo
Description: device is a dual discrete low noise amplifier (LNA) intended to be used as a balanced pair in wireless network applications. The part is useful in a number of different applications and is particularly well suited for cellular or WiMAX base station or tower-mounted
- Frequency Range: 1,700 to 2,000 MHz
- Minimum Gain: 17.9 dB
- Maximum Gain: 17.9 dB
- Output Power( P1dB): 21.6 dBm
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Supplier: Broadcom Inc.
Description: Avago’s family of ultra low noise, high gain, high linearity Gallium Arsenide (GaAs) low noise amplifiers, designed to be used as first stage LNA of cellular base station transceiver radio cards, tower mounted amplifiers (TMA), combiners,
- Frequency Range: 450 to 1,500 MHz
- Minimum Gain: 16.1 dB
- Maximum Gain: 19.1 dB
- Output Power( P1dB): 21.00000000000001 dBm
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Supplier: Microchip Technology, Inc.
Description: amplifier provides a 16 dB of gain, 3.5 dB noise figure, and 19 dBm of output power at 1 dB gain compression at 20 GHz while requiring only 180 mA from an 6 V supply. Output IP3 is typically 35 dBm. The MMA085AA amplifier features RF I/Os that are internally matched to 50
- Features: Other
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Supplier: Custom MMIC
Description: The CMD270P3 is a broadband MMIC low noise amplifier housed in a leadless 3x3 mm plastic surface mount package. The CMD270P3 is ideally suited for EW and communications systems where small size and low power consumption are needed. The broadband device delivers greater
- Frequency Range: 4,000 to 8,000 MHz
- Minimum Gain: 16 dB
- Maximum Gain: 16 dB
- Output Power( P1dB): 17.999999999999996 dBm
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Supplier: Skyworks Solutions, Inc.
Description: 50 ohm High IP3 Low Noise Wideband Gain Block
- Minimum Gain: 13.5 dB
- Maximum Gain: 13.5 dB
- Minimum Operating Voltage: 5 volts
- Maximum Operating Voltage: 9 volts
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Supplier: Richardson RFPD
Description: The HMC-C048 is a GaAs MMIC pHEMT Low Noise Amplifier in a miniature, hermetic module which operates between 5 and 9 GHz. This high dynamic range low noise amplifier module provides 22 dB of gain and up to +25 dBm of output IP 3 while operating from a
- Frequency Range: 5,000 to 9,000 MHz
- Maximum Gain: 22.5 dB
- Output Power( P1dB): 14.799999999999999 dBm
- Noise Figure: 1.75 dB
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Supplier: Texas Instruments
Description: Dual Low-Noise High-Speed Precision Operational Amplifier 8-PDIP
- Supply Voltage (VS): 4 to 44 volts
- Input Offset Voltage (VOS): 1.9 millivolts
- Quiescent Current (IQ): 4,400.000000000001 microamps
- CMRR: 85 dB
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Supplier: Texas Instruments
Description: Low-Noise High-Speed JFET-Input Operational Amplifier 8-PDIP
- Supply Voltage (VS): 4.5 to 38 volts
- Input Offset Voltage (VOS): 4 millivolts
- Quiescent Current (IQ): 2,200.0000000000005 microamps
- CMRR: 70 dB
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Supplier: Custom MMIC
Description: dB of gain with a corresponding output IP3 of +28 dBm and a noise figure of 2.1 dB. The CMD186P3 LNA is a 50 ohm matched design eliminating the need for external DC blocks and RF port matching. The CMD186P3 amplifier is the perfect alternative to costly hybrid amplifiers.
- Frequency Range: 6,000 to 11,000 MHz
- Minimum Gain: 18.5 dB
- Maximum Gain: 18.5 dB
- Output Power( P1dB): 16.999999999999996 dBm
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Supplier: Custom MMIC
Description: with a corresponding noise figure of 0.6 dB at 4 GHz. The CMD283C3 is a 50 ohm matched design which eliminates the need for external DC blocks and RF port matching. Features Ultra low noise figure High gain broadband performance Low power dissipation Pb-free RoHS
- Frequency Range: 2,000 to 6,000 MHz
- Minimum Gain: 27 dB
- Maximum Gain: 27 dB
- Output Power( P1dB): 15.999999999999996 dBm
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Supplier: Texas Instruments
Description: Dual Low-Noise High-Speed JFET-Input Operational Amplifier 8-PDIP
- Supply Voltage (VS): 4.5 to 38 volts
- Input Offset Voltage (VOS): 6 millivolts
- Quiescent Current (IQ): 1,800 microamps
- CMRR: 70 dB
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Supplier: Texas Instruments
Description: Low Noise High-Speed Precision Single Supply Operational Amplifier 8-PDIP
- Supply Voltage (VS): 4 to 44 volts
- Input Offset Voltage (VOS): 1.4 millivolts
- Quiescent Current (IQ): 4,400.000000000001 microamps
- CMRR: 85 dB
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Supplier: Custom MMIC
Description: The CMD290 is a wideband GaAs MMIC distributed low noise amplifier die which operates from 2 to 26 GHz. The broadband device is ideally suited for applications requiring low noise figure performance and high input power survivability. The CMD290 delivers
- Frequency Range: 2,000 to 26,000 MHz
- Minimum Gain: 12.5 dB
- Maximum Gain: 12.5 dB
- Output Power( P1dB): 19.000000000000004 dBm
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Supplier: Skyworks Solutions, Inc.
Description: The SKY67177-11 is a high gain low-noise amplifier with second stage bypass and exceptional linearity. The compact 3 x 3 mm, 16-pin QFN package LNA is designed for 4G LTE and 5G NR base stations operating from 2.3 to 5 GHz. The internal active bias circuitry provides
- Frequency Range: 2,300 to 5,000 MHz
- Minimum Gain: 34 dB
- Maximum Gain: 34.5 dB
- Noise Figure: 0.6 to 1 dB
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Supplier: Networks International Corporation
Description: Type: Bandpass Center Frequency: 500.000-6000.000 (MHz) Mount: SMA NIC introduces its Wideband LNA designed for C Band, Radar and Satcom applications. This amplifier operates in the frequency range of 4 GHz â 5 GHz, providing high gain, low Noise Figure and is built in an
- Filter Type: Bandpass
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Supplier: Skyworks Solutions, Inc.
Description: The SKY67023-396LF is GaAs, pHEMT Low-Noise Amplifier (LNA) with an active bias and very high (+39.5 dBm OIP3) linearity. The advanced GaAs pHEMT enhancement mode process provides excellent return loss, high gain, <0.9 dB low noise figure, and
- Frequency Range: 2,000 to 3,000 MHz
- Minimum Gain: 17.3 dB
- Maximum Gain: 17.3 dB
- Noise Figure: 0.89 dB
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY67100-396LF is being discontinued and is not recommended for new designs. The suggested replacement is SKY67154-396LF The SKY67100-396LF is GaAs, pHEMT Low-Noise Amplifier (LNA) with an active bias and high linearity performance. The advanced GaAs pHEMT
- Frequency Range: 1,200 to 3,000 MHz
- Minimum Gain: 17.5 dB
- Maximum Gain: 17.5 dB
- Noise Figure: 0.7 dB
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Supplier: Marki Microwave LLC
Description: The ADM-10721PSM is a broadband low noise amplifier covering 4 GHz to 22 GHz. Optimized for ultra-low power operation in compact systems, it operates from a single 3V supply at just 17mA bias current, providing typically 20 dB of small-signal gain with a typical
- Frequency Range: 4,000 to 22,000 MHz
- Amplifier Type: Low Noise Amplifier
- Features: Other
- Package Type: Surface Mount Technology (SMT)
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Supplier: Marki Microwave LLC
Description: The ADM-10713PSM is a broadband low noise amplifier covering 12 to 18¢â‚¬Â¯GHz. Designed for ultra-low power consumption, it operates from a single 3¢â‚¬Â¯V supply at only 8¢â‚¬Â¯mA bias current while delivering 27.3¢â‚¬Â¯dB small-signal gain with a typical noise
- Frequency Range: 12,000 to 18,000 MHz
- Amplifier Type: Low Noise Amplifier
- Features: Other
- Package Type: Surface Mount Technology (SMT)
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Supplier: Infineon Technologies AG
Description: BGA416 is a monolithic silicon cascade amplifier with high reverse isolation. A bias network is integrated for simplified biasing. Summary of Features: - GMA = 23 dB at 900MHz - Ultra high reverse isolation, 60 dB at 900 MHz - Low noise figure, F50Ω = 1.2 dB at 900
- Frequency Range: 3,000 MHz
- Minimum Gain: 23 dB
- Maximum Gain: 23 dB
- Noise Figure: 1.3 dB
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Supplier: Marki Microwave LLC
Description: The ADM-10715PSM is a broadband low noise amplifier covering 12¢â‚¬Â¯GHz to 22¢â‚¬Â¯GHz. Optimized for ultra-low power operation in compact systems, it operates from a single 3¢â‚¬Â¯V supply at just 8¢â‚¬Â¯mA bias current, providing 25.7¢â‚¬Â¯dB of small-signal gain with
- Frequency Range: 12,000 to 22,000 MHz
- Amplifier Type: Low Noise Amplifier
- Features: Other
- Package Type: Surface Mount Technology (SMT)
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Supplier: Marki Microwave LLC
Description: The ADM-10711PSM is a broadband low noise amplifier covering 8 to 12¢â‚¬Â¯GHz. Designed for ultra-low power consumption, it operates from a single 3¢â‚¬Â¯V supply at only 8¢â‚¬Â¯mA bias current while delivering 29.1¢â‚¬Â¯dB small-signal gain with a typical noise
- Frequency Range: 8,000 to 12,000 MHz
- Amplifier Type: Low Noise Amplifier
- Features: Other
- Package Type: Surface Mount Technology (SMT)
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Supplier: Infineon Technologies AG
Description: Low noise amplifier MMICs for mobile cellular systems: UMTS, HSPA/+ and LTE Infineon 3G/4G LNA MMICs (Monolithic Microwave Integrated Circuit) are designed to optimize the sensitivity of mobile cellular systems. This allows to extend the area of highest data traffic for UMTS,
- Frequency Range: 3,400 to 3,800 MHz
- Maximum Gain: 18 dB
- Noise Figure: 1.3 dB
- Nominal Operating Current: 0.005 amps
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Supplier: Broadcom Inc.
Description: Avago Technologies’ MGA-632P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA) with active bias. The LNA has low noise with excellent input return loss and high linearity achieved through the use of Avago Technologies’ proprietary 0.5um GaAs
- Frequency Range: 100 to 8,000 MHz
- Minimum Gain: 15.3 dB
- Maximum Gain: 15.3 dB
- Output Power( P1dB): 18.5 dBm
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Supplier: Broadcom Inc.
Description: The Avago MGA-645T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier, LNA, with a Bypass / Shutdown mode. The LNA features low noise and high linearity. The Bypass/Shutdown mode enables the LNA to be bypassed during high input signal power
- Frequency Range: 2,400 MHz
- Minimum Gain: 13.5 dB
- Maximum Gain: 16.5 dB
- Output Power( P1dB): 8.999999999999996 dBm
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Supplier: Cirrus Logic, Inc.
Description: The CS3002 operational amplifiers are designed to achieve optimum performance while reducing component count and bill of materials (BOM) costs. This innovative dual op amp family builds on Cirrus Logic’s patented Multipath™ amplifier technology to deliver both low noise
- Supply Voltage (VS): 2.7 to 6.7 volts
- Input Offset Voltage (VOS): 0.01 millivolts
- Input Bias Current (IBIAS): 0.0001 to 0.001 µA
- CMRR: 115 to 120 dB
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Supplier: Broadcom Inc.
Description: Avago Technologies’ MGA-631P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA) with active bias. The LNA offers low noise with excellent input return loss and high linearity. It has an extra feature that allows a designer to adjust supply
- Frequency Range: 100 to 8,000 MHz
- Minimum Gain: 17.1 dB
- Maximum Gain: 17.1 dB
- Output Power( P1dB): 15.099999999999996 dBm
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Supplier: Newark, An Avnet Company
Description: Analog high linearity low noise variable gain amplifier / REEL RoHS Compliant: Yes
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Supplier: Cirrus Logic, Inc.
Description: Delivering low noise, high performance, and a small footprint, the CS3301A seismic amplifiers is designed for use with geophone sensors. This highly integrated, programmable gain differential amplifier is engineered for precise low frequency, high
- Supply Voltage (VS): -2.6 to 3.3 volts
- Bandwidth: 0 to 0.002 MHz
- Device Type: Differential Amplifiers
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Supplier: Cirrus Logic, Inc.
Description: Delivering low noise, high performance, and a small footprint, the CS3302A seismic amplifier is designed for use with hydrophone sensors. This highly integrated, programmable gain differential amplifier is engineered for precise low frequency, high
- Operating Temperature: -40 to 85 C
- Supply Voltage (VS): -2.5 to 3.3 volts
- Bandwidth: 0 to 0.002 MHz
- Pin Count: 24
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Supplier: Fairview Microwave Inc.
Description: RF broadband / wideband amplifier FMAM3260 from Fairview Microwave is one amp of a large selection of in-stock radio frequency broad / wide band amplifiers specifically stocked to be highly available for rapid shipment. Fairview RF broadband amplifier is a connectorized
- Frequency Range: 18,000 to 26,500 MHz
- Minimum Gain: 38 dB
- Maximum Gain: 40 dB
- Output Power( P1dB): 13.000000000000002 dBm
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The AMM-7473PC is a high-linearity, low noise distributed amplifier that provides +25dBm output power across a 400 MHz to 26.5GHz band and up to 16GHz gain. Ideal for radar and satellite communications, the amplifier can serve either as a linear signal amplifier or as a saturated driver amplifier for H- or S-diode mixers. (read more)
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frequency with a single tune Noise figure: 0.44 dB @ 3.6 GHz Gain: 19.1 dB @ 3.6 GHz Output IP3: 28.9 dBm @ 3.6 GHz Switching time: 0.3 us Package: 2 x 2 x 0.75 mm Learn more about Skyworks' complete portfolio of low noise amplifier products today! (read more)
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current or low charge measurements requires signal cables with very high insulation resistance in order to avoid additional thermal resistance noise. A high insulation resistance is also important for preventing the low currents/charges from flowing to ground (shield) and therefore not contributing to (read more)
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The ADM-8536PSM is the world's smallest 2-20 GHz high linearity, low noise amplifier solution, featuring 10.5 dB gain, +25 dBm OIP3 and 2.5 dB noise figure that makes it suitable for use in RF front ends. The amplifier is designed for ease of use due to its internal bias network, DC blocking and RF matching, while its compact 1.3 x 2 mm DFN package and low power consumption make it an ideal choice for low SWaP applications. (read more)
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The SKY67180-306LF is a two-stage, low-noise amplifier (LNA) with active bias and high-linearity performance. The front end of the device provides an ultra-low noise figure (NF) while the output stage provides high gain, linearity, and efficiency. With excellent (read more)
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Design and realisation of a microwave three-dimensional imaging system with application to breast-cancer detection
[47] OMMIC, CGY2108HV: ‘Dual ultra low noise high IP3 amplifier ’.
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Page 2. Semiconductor parts with 490 in root number
GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER , 12 - 17 GHz .
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MBC13720 Datasheet - Amplifier with Bypass Switch from Motorola
The MBC13720 is a high IP3 , low noise amplifier designed for 400 MHz to 2.4 GHz multistandard wireless applications.
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Noise Reduction in LNAs Using a Conductive Path to Ground Technique in SiGe Technology
Maxim Product Data Sheet, 2.4 GHz SiGe, High IP3 Low - Noise Amplifier , 2003.
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A Low Noise Integrated 0.3-16 GHz Differential Amplifier for Balanced Ultra Wideband Antennas
[6] CGY2109HV/C1 Dual Ultra Low Noise Amplifier with high IP3 (Product Brief), OMMIC, Nov. 2006.
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Dynamic range considerations for wideband Zero-IF receivers
A low noise amplifier with high IP3 point can be used prior to the mixer to maximise the total IIP3 point of the Zero-IF receiver chain.
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Noise characterization of ultra low noise differential amplifiers for next generation radiotelescopes
[Online] Available: http://www.skatelescope.org [2] CGY2109HV/C1 Dual Ultra Low Noise Amplifier with high IP3 (Product Brief), OMMIC, Nov. 2006 [3] J.G. Bij de Vaate D. Geskus and R.H. Witvers, .
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Complete Wireless Design > Bibliography Books
[p2001538f8990660007] A 1.9 GHz Low Noise Amplifier Optimized for High IP3 Using BFP540, App.
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Comparison of the effectiveness of four linearizing techniques used in SiGe HBT LNA at 1900 MHz and low‐bias voltage
Raul Pineiro, A low - noise amplifier with high IP3 for the 900-MHz band using the MRF1057T1 low-noise transistor, Motorola, Inc. document report AN1675/D, 1998.
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A compact dual‐slot antenna for WLAN applications
T. Tracht, A 1.9 GHz low noise amplifier optimized for high IP3 using BFP540, Application note no. 057, Infineon Semiconductor Group, 1999.
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