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Supplier: APITech
Description: Wide bandwidth and high efficiency are not the only features offered in our full line of high power amplifiers. Utilizing both in-house chip and wire (hybrid), thin film, and SMT technology, our power amplifiers draw from a wide range of leading edge
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Supplier: Power Amp Design
Description: The PAD129 high power operational amplifier is constructed with surface mount components to provide a cost effective solution for many industrial applications. With a footprint only 5.6 in2 the PAD129 offers outstanding performance that rivals much more expensive hybrid
- Supply Voltage (VS): 10 to 100 volts
- Input Offset Voltage (VOS): 1 to 5 millivolts
- Input Bias Current (IBIAS): 0.0001 µA
- Quiescent Current (IQ): 48,000 to 57,000.00000000001 microamps
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Supplier: Power Amp Design
Description: The PAD126 high voltage operational amplifier is constructed with surface mount components to provide a cost effective solution for many industrial applications. With a footprint only 80mm square the PAD126 offers outstanding performance that rivals much more expensive hybrid component
- Supply Voltage (VS): 20 to 250 volts
- Input Offset Voltage (VOS): 1 to 5 millivolts
- Input Bias Current (IBIAS): 0.0001 µA
- Quiescent Current (IQ): 16,000.000000000002 to 20,000 microamps
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Supplier: Texas Instruments
Description: Dual High Power Operational Amplifier 8-TO-3
- Supply Voltage (VS): 20 to 80 volts
- Input Offset Voltage (VOS): 1 millivolts
- Slew Rate (SR): 6 V/µs
- Output Current (Iout): 5 amps
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Supplier: Texas Instruments
Description: High Power Monolithic Operational Amplifier 8-TO-3
- Supply Voltage (VS): 20 to 70 volts
- Input Offset Voltage (VOS): 10 millivolts
- Quiescent Current (IQ): 25,000.000000000004 microamps
- CMRR: 95 dB
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Supplier: Texas Instruments
Description: High Power Differential Driver Amplifier 8-SOIC
- Device Type: Differential Amplifiers
- Standards and Certifications: RoHS Compliant
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Supplier: Richardson RFPD
Description: The ADPA7005CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 20 GHz to 44 GHz. The amplifier provides 17 dB of small signal gain, 31
- Frequency Range: 20,000 to 44,000 MHz
- Maximum Gain: 17 dB
- Output Power( P1dB): 31 dBm
- Noise Figure: 7 dB
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Supplier: Skyworks Solutions, Inc.
Description: Please note: RFX240 is being discontinued and is not recommended for new designs. The RFX240 is high power, high linearity power amplifier implemented in CMOS process. The device is optimized to provide all functionality of transmit power amplification for
- Minimum Gain: 30 dB
- Maximum Gain: 30 dB
- Minimum Operating Voltage: 3.6 volts
- Maximum Operating Voltage: 5.5 volts
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Supplier: Texas Instruments
Description: JFET-Input High-Output-Drive uPower Operational Amplifier 8-PDIP
- Supply Voltage (VS): 7 to 36 volts
- Input Offset Voltage (VOS): 3.0999999999999996 millivolts
- Quiescent Current (IQ): 325 microamps
- CMRR: 65 dB
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Supplier: Skyworks Solutions, Inc.
Description: Please note: RFX242 is being discontinued and is not recommended for new designs. The suggested replacement is SE2623L The RFX242 is high power, high linearity power amplifier implemented in CMOS process. The device is optimized to provide all functionality of
- Minimum Gain: 32 dB
- Maximum Gain: 32 dB
- Minimum Operating Voltage: 4.5 volts
- Maximum Operating Voltage: 5.5 volts
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Supplier: Richardson RFPD
Description: The ADPA7006CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18 GHz to 44 GHz. The amplifier provides 23.5 dB of small signal gain, 29
- Frequency Range: 18,000 to 44,000 MHz
- Maximum Gain: 23.5 dB
- Output Power( P1dB): 29 dBm
- Minimum Operating Voltage: 5 volts
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Supplier: Qorvo
Description: The QPA9418 is a high-linearity two-stage power amplifier in a low-cost surface-mount package with on-chip bias control and temperature control circuits, suitable for small cell base station applications. The QPA9418 provides 30.5 dB gain and +27 dBm linear power
- Frequency Range: 1,805 to 1,880 MHz
- Minimum Gain: 30.5 dB
- Maximum Gain: 30.5 dB
- Output Power( P1dB): 35.5 dBm
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Supplier: Utmel Electronic Limited
Description: High Speed Operational Amplifiers Low-Power ADSL Diff Receiver
- Supply Voltage (VS): 15 volts
- Supply Current (IS): 8.399999999999999 milliamps
- Gain-Bandwidth Product (GBW): 175 MHz
- Slew Rate (SR): 0.00023 V/µs
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: amplifier, current sense, Low-Power, High-Performance, Dual, SOIC, Operational Amplifier IC, OP Amps, Buffer Amps ICs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects.
- Operating Temperature: -40 C
- Device Type: Operational Amplifiers
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Supplier: VAST STOCK CO., LIMITED
Description: High Speed Operational Amplifiers High Speed, Low Power, Low Distortion Voltage Feedback Amplifier 8-SOIC -40 to 85
- Device Type: Operational Amplifiers
- Features: Other
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Supplier: Microchip Technology, Inc.
Description: The HV265 device is a 4-channel high-voltage operational amplifier array with an optional internal feedback resistor network. The amplifier array IC operates on a 225 V high-voltage supply and a 5 V low-voltage supply. Each channel has its independent input and output
- Slew Rate (SR): 0.02 V/µs
- Features: Other
- Device Type: Power Operational Amplifiers
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Supplier: Qorvo
Description: Qorvo's SZM-5066Z is a high-linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost, surface-mountable, plastic QFN multi-chip module package. The SZM-5066Z is designed for 802.11a/n in the 4.9GHz to 5.85GHz bands and can operate from a single
- Frequency Range: 5,100 to 5,900 MHz
- Minimum Gain: 33 dB
- Maximum Gain: 33 dB
- Amplifier Type: Power Amplifier
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65120-21 is being discontinued and is not recommended for new designs. The SKY65120-21 is a fully matched 20-pin, lead-free, surface mount, Multi-Chip Module (MCM) Power Amplifier (PA) designed for WCDMA/PCS/DCS/UTMS/TD-SCDMA Radio, repeaters, transmitters, and
- Frequency Range: 2,110 to 2,170 MHz
- Minimum Gain: 24.6 dB
- Maximum Gain: 24.6 dB
- Output Power( P1dB): 24.5 dBm
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Supplier: Renesas Electronics Corporation
Description: The ISL55210 is a very wide band, Fully Differential Amplifier (FDA) intended for high dynamic range ADC input interface applications. This voltage feedback FDA design includes an independent output common mode voltage control. Intended for very high dynamic range ADC interface
- Slew Rate (SR): 5,600 V/µs
- Supply Voltage (VS): 3 to 4.2 volts
- Bandwidth: 2,200 MHz
- CMRR: 75 dB
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Supplier: Power Amp Design
Description: amplifier is available without the integrated heat sink and fan. RoHS Compliant. LOW COST SMALL SIZE 40mm SQUARE HIGH VOLTAGE- 200 VOLTS HIGH OUTPUT CURRENT- 12A PEAK RoHS COMPLIANT 240 WATT OUTPUT CAPABILITY 30V/µS SLEW RATE INTEGRATED HEAT SINK & FAN 75 WATT DISSIPATION
- Supply Voltage (VS): 15 to 100 volts
- Input Offset Voltage (VOS): 1 to 3 millivolts
- Input Bias Current (IBIAS): 0.0001 µA
- Quiescent Current (IQ): 28,000.000000000004 to 32,000.000000000004 microamps
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Supplier: Utmel Electronic Limited
Description: JFET-Input High-Output-Drive uPower Operational Amplifier 8-SOIC -40 to 85
- Supply Voltage (VS): 5 volts
- Supply Current (IS): 0.29 milliamps
- Input Offset Voltage (VOS): 0.6 millivolts
- Input Bias Current (IBIAS): 0.000059999999999999995 µA
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Supplier: Newark, An Avnet Company
Description: OP AMP, HIGH POWER, TO-220-11, 541; No. of Amplifiers:1 Amplifier; Bandwidth:1.6MHz; Slew Rate:10V/µs; Supply Voltage Range:± 10V to ± 35V; Amplifier Case Style:TO-220; No. of Pins:11Pins; Operating Temperature Min:-25°C; Operating RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85
- Operating Temperature: -40 to 85 C
- Slew Rate (SR): 0.0028 V/µs
- Supply Voltage (VS): 5 volts
- Bandwidth: 370 MHz
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Supplier: Utmel Electronic Limited
Description: High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70
- Operating Temperature: 0 to 70 C
- Slew Rate (SR): 0.0028 V/µs
- Supply Voltage (VS): 5 volts
- Bandwidth: 370 MHz
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include High-Performance. Search-friendly keywords include Audio Amplifier, Audio Amplifiers, electronic component, datasheet, replacement part,
- Supply Voltage (VS): 2.3 to 4.8 volts
- Operating Temperature: -40 C
- Device Type: Audio Amplifiers
- Features: Other
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Supplier: PREMA Semiconductor GmbH
Description: The high voltage operational amplifier PR2201 works for supply voltages of up to 80V single supply or up to ±40V and a maximum output current of ±6mA. The common mode input voltage covers nearly the complete supply voltage range with an excellent common mode and power supply
- Supply Voltage (VS): 1.5 to 2 volts
- Input Offset Voltage (VOS): 2 to 10 millivolts
- Input Bias Current (IBIAS): 0.000005 to 0.0001 µA
- Quiescent Current (IQ): 500.00000000000006 to 700 microamps
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Supplier: ROHM Semiconductor GmbH
Description: General-purpose BA3472 / BA3474 family integrate two/four Independent Op-amps and phase compensation capacitors on a single chip and have some features of high-gain, low power consumption, and wide operating voltage range of +3[V] ~ +36[V](single power supply).
- Minimum Closed-Loop Gain (AVCL): 100 V/V
- Supply Voltage (VS): 3 to 36 volts
- Supply Current (IS): 4 milliamps
- Input Offset Voltage (VOS): 10 millivolts
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Supplier: ROHM Semiconductor USA, LLC
Description: General-purpose BA3472 / BA3474 family integrate two/four Independent Op-amps and phase compensation capacitors on a single chip and have some features of high-gain, low power consumption, and wide operating voltage range of +3[V] ~ +36[V](single power supply).
- Minimum Closed-Loop Gain (AVCL): 100 V/V
- Supply Voltage (VS): 1.5 to 18 volts
- Supply Current (IS): 4 milliamps
- Input Offset Voltage (VOS): 10 millivolts
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Supplier: Renesas Electronics Corporation
Description: addition, these high performance components also provide low offset current and high input impedance. 120V/µs slew rate and 200ns (0.2%) settling time of these amplifiers make them ideal components for pulse amplification and data acquisition designs. These devices are valuable
- Supply Voltage (VS): 16 to 36 volts
- Supply Current (IS): 4 milliamps
- Input Offset Voltage (VOS): 10 millivolts
- Input Bias Current (IBIAS): 0.125 to 0.25 µA
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Supplier: Qorvo
Description: The QPA9510 is a high-power, high-gain, high-efficiency power amplifier. The device is manufactured with Qorvo’s advanced GaAs process. The amplifier provides 34dB of max gain and able to achieve +32dBm of P1dB along with flexibility in bias settings.
- Open-Loop Gain (AVOL): 33.8 dB
- Supply Voltage (VS): 3.8 volts
- Bandwidth: 100 to 1,000 MHz
- Features: Other
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Supplier: APITech
Description: API is a leading manufacturer of integrated power amplifier assemblies incorporating multi-band amplifiers, switched harmonic filter banks and high efficiency DC converters with integrated adaptive biasing controls to ensure high reliability.
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Supplier: Custom MMIC
Description: dB of gain with a corresponding output 1 dB compression point of greater than +28 dBm. The CMD170P4 amplifier is a 50 ohm matched design which eliminates the need for external DC blocks and RF port matching. The CMD170P4 is also equipped with an on-chip detector for applications where
- Frequency Range: 7,500 to 9,000 MHz
- Minimum Gain: 30 dB
- Maximum Gain: 30 dB
- Output Power( P1dB): 28.3 dBm
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Supplier: Broadcom Inc.
Description: The ALM-32120 is a high linearity 2 Watt PA with good Output IP3 performance and exceptionally good Power Added Efficiency, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process. This 2 Watt power amplifier is housed inside
- Frequency Range: 700 to 1,000 MHz
- Minimum Gain: 12.5 dB
- Maximum Gain: 15.5 dB
- Output Power( P1dB): 34.400000000000006 dBm
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Supplier: Ohmite Manufacturing Co.
Description: Using the SOT-227 package, the TGHD series features flat type, 100W high power resistors that require an air-cooled heatsink or water-cooling to reach peak performance. These resistors are offered either with quick connect tabs or flywire leads. The TGHD Series is a great option for
- Resistance Range: 0.1 to 51,000 ohms
- Tolerance: 5 +/- %
- Temperature Coefficient (TCR): 100 ±ppm/°C
- Power Rating: 100 watts
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Supplier: Qorvo
Description: The QPA9901 is a high-efficiency, fully input and output matched linearizable power amplifier in RoHS compliant surface mount package. This InGaP/GaAs HBT device delivers high performance across wideband frequencies with +35.6dBm P3dB while maintaining 32% PAE at 28dBm
- Features: Other
- Standards and Certifications: RoHS Compliant
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Featured Products Top
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1.8 GHz, 23 dB, High Output Hybrid Power Doubler, 24 V, 12.5 W The QPA3311 is a Hybrid Power Doubler amplifier module. The part employs GaAs/GaN die and is operated from 45 MHz to 1794 MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
45 MHz - 1794 MHz, 34V, 18W, 23dB Gain High Output Power Doubler CATV Hybrid The QPA3316 is a Hybrid Power Doubler amplifier module,with 23 dB of gain. The part employs GaAs/GaN die and has an operational bandwidth from 45 MHz to 1794 MHz. It provides excellent (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Modern embedded and portable devices often require low-power, high-fidelity audio while minimizing PCB space and BOM cost. Designers face challenges integrating multiple discrete components for headphones, speakers, and digital audio effects without (read more)
Browse Audio Amplifier Chips Datasheets for Win Source Electronics -
The QPA9510 is a high-power, high-gain, high-efficiency power amplifier. The device is manufactured with Qorvo’s advanced GaAs process. The amplifier provides 34dB of max gain and able to achieve +32dBm of P1dB along with flexibility in bias settings. QPA9510 is designed for use as (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA2811 is a packaged, high-power X-band amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 8.5?-?10.55 GHz, the QPA2811 provides 48.9 dBm of saturated output power and 27.9 dB of large-signal gain while achieving 48.5 % power (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1111 is a high power, packaged X-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1111 operates from 8.5 – 10.5 GHz, typically provides 30 W saturated output power with power-added efficiency of 45% and small signal (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1724D is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1724D targets the 17.3 – 21.2 GHz Satcom band providing 5 Watts of linear power with third-order intermodulation distortion products of 22 d (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1722 is a high power, packaged K-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1722 targets the 17.7 – 20.2 GHz Satcom band while providing 5 Watts of linear power with third-order intermodulation distortion products (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1314 is a packaged high power MMIC amplifier, fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). QPA1314 is targeted for 13.75 – 14.5 GHz Satcom band. Linear power is 20 W with 25 dBc third order intermodulation distortion products. It (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA0813 is a packaged, high performance driver amplifier fabricated on Qorvo's production 0.15 um GaAs pHEMT process (QPHT15). Covering 8?-?11 GHz, the QPA0813 provides 0.7 W of saturated output power with 50% power-added efficiency. The device has an Enable / Disable function for fast (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo
Conduct Research Top
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Single Supply Operation With Power Op Amps
The article outlines the problems and solutions for operating power op amps with a single high power supply voltage. Several application circuits are proposed that may help the user reduce system costs while maintaining high performance. Some familiarity with op amp circuits is assumed. Although
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AN721: Impedance Matching Networks Applied to RF Power Transistors, Courtesy of Motorola
Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer to high frequency power amplifiers. Although matching networks normally take the form of filters and therefore are also useful to provide frequency discrimination, this aspect will only
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Dewar-to-Dewar Data Transfer at 2 Gigabits per Second
Josephsoii digital. circuits can be integrated into inultichip digital subsystems. that can pass data at high rates without the use of power-. hungry semiconductor amplifiers.
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
Details surface about Intel's chip-set roadmap UMC still negotiating purchase of WSMC, but little progress made U.S. decides not to impose dumping duties on Taiwan NETsilicon earnings driven up by Y2K, but it's only for one quarter General Semiconductor's new power MOSFETs switch fast at low
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
, OLEDs keys to handset power Samsung believes fuel cells, OLEDs and high-efficiency power amplifiers are the answers to future power needs of high-data-rate mobile devices, including those using mobile WiMAX. Rotary engine revs for comeback Remember the Wankel? There's a new spin on the rotary engine
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
, OLEDs keys to handset power Samsung believes fuel cells, OLEDs and high-efficiency power amplifiers are the answers to future power needs of high-data-rate mobile devices, including those using mobile WiMAX. Rotary engine revs for comeback Remember the Wankel? There's a new spin on the rotary engine
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Advantage's of Microchip's Cascaded Op Amps
amplifiers* Chip Select (CS FIGURE 2: Cascaded Amplifiers. Small 8-pin packages (PDIP-8, SOIC-8, MSOP-8) There are several interesting variations of the circuit in Pinout similar to the industry standard for duals Figure 2 that are supported by these parts. For The two op amps are connected so
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A Microfluidic System for Biological Particle Enrichment Using Contactless Dielectrophoresis
through the. main channel. High-frequency electric fields were provided. by a wideband, high-power amplifier and transformer combination. (Amp-Line Corp., Oakland Gardens, NY), and signal. generation was accomplished using a function generator. (GFG-3015; GW Instek, Taipei, Taiwan). Numerical Modeling
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High-power hybrid quasi-optical Ka-band amplifier design
The amplifier unit cell consists of a MMlC driver amplifier chip followed by a two-stage high power amplifier chip .
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High-power hybrid quasi-optical Ka-band amplifier design
The cell consists of a MMIC driver followed by a two-stage high power amplifier chip .
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Parameter based investigation: the design of node-B high power PA
Two durable high power amplifier chips from Freescale Semiconductor Inc. were compared.
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A Membrane Probe For Testing High Power Amplifiers At mm Wave Frequencies
There are two principal problems that traditional coaxial-needle probes face with high power amplifier chips tested on-wafer.
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Miniaturized X-band MMIC T/R module for conformal array antenna
6 MMIC chips and 5 multi-pad microchip capacitors are mounted on the substrate, especially high power amplifier chip (HPNSW) and medium power amplifier chip (MPA) are mounted on the Cu-W base plate directly to make sure the good heat dissipation.
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Application of GaN high power chips in T/R modules
85W GAN HIGH POWER CHIPS AMPLIFIER DESIGN .
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Manipulation and light-induced agglomeration of carbon nanotubes through optical
trapping of attached silver nanoparticles
MWCNTs ideal to use in integrated circuits (IC) interconnects or particularly as bumps for the flip- chip high power amplifier [9–13].
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Selective growth of vertically aligned double- and single-walled carbon nanotubes on a substrate at
590 °C
…A M and Dai H 1999 Self-oriented regular arrays of carbon nanotubes and their field emission properties Science 283 512–4 [6] Iwai T et al 2005 Thermal source bumps utilizing carbon nanotubes for flip- chip high power amplifiers IEEE IEDM Tech.