Products & Services
See also: Categories | Featured Products | Technical Articles | More Information-
Supplier: First Sensor AG
Description: These high-speed epitaxial photodiodes are ideal for VIS and NIR applications with low operating voltages. Features: Photodiodes with epitaxial layer structure for fast rise times at low reverse voltages. Epitaxial layer thickness optimized for highest speed and maximum
- Active Area Diameter or Length: 0.5000 mm
- Dark Current: 0.1000 nA
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
-
Supplier: OSI Optoelectronics
Description: The Large Active Area High Speed Detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the maximum allowable value, for achieving even faster response times in Nano seconds.
- Dark Current: 2 nA
- Noise Equivalent Power (NEP): 3.40E-14 W/Hz½
- Operating Temperature: -20 to 60 C
- PN, PIN, or Avalanche: PIN Photodiode
-
Supplier: Hamamatsu Photonics Europe
Description: Large area, high-speed PIN photodiode for UV to near IR photometry The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of f4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending
- Active Area Diameter or Length: 4.1 mm
- Active Area Height: 4.1 mm
- Dark Current: 30 nA
- PN, PIN, or Avalanche: PIN Photodiode
-
-
Supplier: Hamamatsu Photonics Europe
Description: High UV resistance, high-speed response, photodiodes for UV monitor The S16586 is a high-speed response Si PIN photodiode that has achieved high reliability for monitoring ultraviolet light. They exhibit low sensitivity deterioration under UV light
- Active Area Diameter or Length: 0.8000 mm
- Active Area Height: 0.8000 mm
- Dark Current: 0.0150 nA
- PN, PIN, or Avalanche: PIN Photodiode
-
Supplier: Hamamatsu Photonics Europe
Description: Large area, high-speed Si PIN photodiode The S3071 is a Si PIN photodiode having a relatively large photosensitive area yet it offers excellent frequency response at 40 MHz. This photodiode is suitable for FSO(free space optics) and high-speed pulsed light
- Active Area Diameter or Length: 5 mm
- Active Area Height: 5 mm
- Dark Current: 10 nA
- PN, PIN, or Avalanche: PIN Photodiode
-
Supplier: Hamamatsu Photonics Europe
Description: Large area, high-speed Si PIN photodiode The S3072 is a Si PIN photodiode having a relatively large photosensitive area yet it offers excellent frequency response at 45 MHz. This photodiode is suitable for FSO(free space optics) and high-speed pulsed light
- Active Area Diameter or Length: 3 mm
- Active Area Height: 3 mm
- Dark Current: 10 nA
- PN, PIN, or Avalanche: PIN Photodiode
-
Supplier: OSI Optoelectronics
Description: OSI Optoelectronics' family of large active area and high speed silicon detector series are designed to reliably support short-haul data communications applications. All exhibit low dark current and low capacitance at 3.3V bias. The base unit comes in a 3 pin TO-46 package with
- Active Area Diameter or Length: 0.1270 mm
- Dark Current: 0.0200 nA
- Noise Equivalent Power (NEP): 5.95E-15 W/Hz½
- Operating Temperature: -40 to 75 C
-
Supplier: First Sensor AG
Description: Due to their high gain and speed, these APDs are suitable for many industrial applications such as distance measurement, laser scanning and optical communication. Special features Maximum sensitivity at 800 nm Optimized for high speeds Low temperature coefficient Fast
- Active Area Diameter or Length: 0.2300 mm
- Dark Current: 0.2000 to 0.5000 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
-
Supplier: OSI Optoelectronics
Description: OSI Optoelectronics' 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens. Over a wide range of sensitivity
- Active Area Diameter or Length: 2.57 mm
- Noise Equivalent Power (NEP): 9.10E-15 W/Hz½
- Operating Temperature: -20 to 60 C
- PN, PIN, or Avalanche: PIN Photodiode
-
Supplier: OSI Optoelectronics
Description: OSI Optoelectronics' 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens. Over a wide range of sensitivity
- Active Area Diameter or Length: 11.33 mm
- Noise Equivalent Power (NEP): 4.10E-14 W/Hz½
- Operating Temperature: -20 to 60 C
- PN, PIN, or Avalanche: PIN Photodiode
-
Supplier: Marktech Optoelectronics
Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm
- Active Area Diameter or Length: 0.0400 mm
- Active Area Height: 230 mm
- Dark Current: 0.0500 nA
- Operating Temperature: -20 to 85 C
-
Supplier: First Sensor AG
Description: Due to their high gain and speed, these APDs are suitable for many industrial applications such as distance measurement, laser scanning and optical communication. Special features Maximum sensitivity at 800 nm Optimized for high speeds Low temperature coefficient Fast
- Active Area Diameter or Length: 0.2300 mm
- Dark Current: 0.2000 to 0.5000 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
-
Supplier: Micropac Industries, Inc.
Description: The 61063 is a Silicon Photodiode in a package designed to be mounted in a double-clad printed circuit board. It is lensed for minimum response to stray light. Fast operating speed makes this device the best option in applications where speed considerations predominate.
- Dark Current: 50 nA
- Operating Temperature: -55 to 125 C
- PN, PIN, or Avalanche: PN Photodiode, PIN Photodiode
- PSD: Yes
-
Supplier: RS Components, Ltd.
Description: This family of PIN photodiodes, from OSRAM Opto Semiconductors, have a sensitive area of 2.2 x 2.2 mm². They are available with or without daylight filter. These PIN photodiodes are ideal for high speed applications. Spectrums Detected = Infrared Wavelength of Peak
- Photodiode Material: Silicon
- Spectral Response: IR
- Spectral Response Range: 730 to 1100 nm
-
Supplier: Newport MKS
Description: the µW regime. The detector is AC coupled and features a bandwidth of up to 1.2 GHz. A wall plug-in style power supply is provided with this unit. 818-BB Series Biased Photodiode Detectors are cost effective diagnostic tools suitable for a variety of high speed applications such
- Connector Type: Other
- Photodiode Type: PIN
- Receiver Rise Time: 0.5000 ns
-
Supplier: Newport MKS
Description: data with an integrated high-sensitivity Silicon photodiode linear array & exit-port photodiode. Elevate your instruments with precise, efficient measurements of 340, 380, 405, 450, 505, 546, 578, 630, 670, & 700 nm wavelengths.
- Spectral / Wavelength Range: 340 to 700 nm
-
Supplier: RS Components, Ltd.
Description: The OPF series, from Optek Technology, are a family of fibre optic detectors. They consist of a low noise silicon PIN photodiode within a package designed for fibre optic applications. The OPF series offers high speed and low capacitance, improving the signal to noise
- Connector Type: ST
- Transmitter Rise Time: 2 ns
-
Supplier: RS Components, Ltd.
Description: The OPF series, from Optek Technology, are a family of fibre optic detectors. They consist of a low noise silicon PIN photodiode within a package designed for fibre optic applications. The OPF series offers high speed and low capacitance, improving the signal to noise
- Receiver Rise Time: 6 ns
-
Supplier: RS Components, Ltd.
Description: 611 and OPB621 consist of an IR LED and a PIN photodiode. Their plastic housing is opaque to visible light but transmissive to IR light. The PIN photodiode within these slotted optical switches is ideal for use in high-speed operation. Suitable applications for the slotted
- Body: Slot
- Operating Temperature: -40 to 212 F
-
Supplier: Universal Semiconductor, Inc.
Description: Linear type, diffused junction technology
- Active Area Diameter or Length: 30 mm
- Active Area Height: 4 mm
- Dark Current: 3000 nA
- Noise Equivalent Power (NEP): 3.75 W/Hz½
-
Supplier: Clairex Technologies, Inc.
Description: Photodiodes
- Active Area Diameter or Length: 1.52 mm
- Active Area Height: 1.52 mm
- Dark Current: 20 nA
- Photodiode Material: Silicon
-
Supplier: Electro Optical Components, Inc.
Description: Quadrant photodiodes are used for a variety of alignment applications including laser beams and position sensing. They are available in 2.5, 5.0 and 7.9 mm diameter active areas. Quadrant Photodetector Features Si-PIN photodiode Spectral range 400 – 1100
- Active Area Diameter or Length: 2.5 to 7.9 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
-
Supplier: Quantum Devices, Inc.
Description: Quantum Devices offers the ability to customize a planar silicon photodiode with either single or multiple diode structures on a single chip. This configuration is a p-on-n structure and can be used to detect the presence and absence of minute quantities of light. The linearity of this
- PN, PIN, or Avalanche: PN Photodiode
- Photodiode Material: Silicon
-
Supplier: PREMA Semiconductor GmbH
Description: Two differential pairs of photodiodes with amplifiers The optical sensor IC PR5401 consists of two pairs of photodiodes placed in opposite quadrants with differential amplifiers. If illuminated uniformly, the output is Vcc/2, but depends on the balance of illumination on each pair.
- Array: Yes
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: PN Photodiode
- Photodiode Material: Silicon
-
Supplier: IDEA, Inc.
Description: Lead (Pb) free, black lens
- Active Area Diameter or Length: 4.8 mm
- Active Area Height: 6.6 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
-
Supplier: Ophir-Spiricon Inc.
Description: Recommended for measurement of low energies and high repetition rates
- Active Area Diameter or Length: 10 mm
- Photodiode Material: Silicon
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 200 to 1100 nm
-
Supplier: Photonique SA
Description: UV & blue light solidstate photon detector/counter; 2mm sensor pitch
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Array: Yes
- Dark Current: 10000 nA
-
Supplier: MOXTEK, Inc.
Description: The XPIN® detector is Moxtek’s best performing Si-PIN detector. XPIN detectors use a silicon PIN diode, multi-layer collimator, and thin DuraBeryllium® window, achieving great resolution and x-ray sensitivity. The XPIN preamp provides a low-noise signal output to an analog or
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
- Spectral Response: X-ray
Find Suppliers by Category Top
Featured Products Top
-
-Optimized, High-Speed (read more)
Browse Multi-axis Positioning Systems Datasheets for PI (Physik Instrumente) L.P. -
Material Advantages: Aluminum silicon carbide (AISiC) combines the best of aluminum alloys and ceramic materials, delivering: High specific stiffness (read more)
Browse Silicon Carbide and Silicon Carbide Ceramics Datasheets for Fountyl Technologies Pte. Ltd. -
Semiconductor manufacturing and ultra-precision motion platforms face critical challenges, including dimensional deformation, instability at high speeds, and excessive motion inertia that can compromise precision and (read more)
Browse Silicon Carbide and Silicon Carbide Ceramics Datasheets for Fountyl Technologies Pte. Ltd. -
High-grade micro powder with certain angles is manufactured to maintain a high grinding force, which can greatly save your time in polishing and grinding (read more)
Browse Thin Film Materials Datasheets for Beijing Grish Hitech Co., Ltd. -
speeds. Applications in Cutting Tools: High-Speed Machining: Silicon nitride tools are used in high-speed machining operations where the cutting edge must withstand extreme temperatures and mechanical stresses. Hard (read more)
Browse Silicon Nitride and Silicon Nitride Ceramics Datasheets for 3X Ceramic Parts Company Limited -
Silicon carbide (SiC) ceramic beams are critical components in ultra-precision motion platforms and semiconductor equipment, enabling high-speed, high-accuracy positioning and (read more)
Browse Silicon Carbide and Silicon Carbide Ceramics Datasheets for Fountyl Technologies Pte. Ltd. -
Fountyl silicon carbide (SiC) ceramics are engineered to meet the demanding requirements of integrated circuit manufacturing equipment, including photolithography machines. With exceptional hardness, high thermal conductivity, and low thermal (read more)
Browse Silicon Carbide and Silicon Carbide Ceramics Datasheets for Fountyl Technologies Pte. Ltd. -
high dielectric strength. Why use silicon nitride balls instead of steel? They are lighter, harder, corrosion-resistant, and suitable for high-speed, high (read more)
Browse Silicon Nitride and Silicon Nitride Ceramics Datasheets for Shenzhen Great Precision Ceramic CO., LTD. -
Manufacturing of Silicon Carbide (SiC) Silicon carbide (SiC) mirrors are advanced optical components known for their high stiffness, thermal stability, and lighweight properties, making them ideal for custom precision space optics, large telescopes, high-speed scanning (read more)
Browse Optical Mirrors Datasheets for Avantier Inc. -
FEMTO's OE-300 photoreceiver series uses premium quality photodiodes followed by a high (read more)
Browse Photosensor Modules Datasheets for Electro Optical Components, Inc.
Conduct Research Top
-
Silicon Photodiodes Physics and Technology (.pdf)
Silicon photodiodes are semiconductor devices used for the detection of light in ultra-violet, visible and infrared spectral regions. Because of their small size, low noise, high speed and good spectral response, silicon photodiodes are being used for both civilian and defense regulated
More Information Top
Indicates content that may require registration and/or purchase.
-
A Nanosecond Streak Camera With Simplified Streak Tube
After going through a light splitter, the laser beam is divided into two beams, and a beam of which is entered the streak tube, another is input on a high speed silicon photodiode .
-
Master oscillator-amplifier Nd:YAG laser with a SBS phase-conjugate mirror
PDJ, PD2, PD3) : high speed silicon photodiodes .
-
Springer Handbook of Experimental Solid Mechanics
The interferometric signals are captured by high speed silicon photodiodes (with rise times < 1 ns) and recorded on high-speed digitizing os- cilloscopes, using typical sampling rates of 1 ns/point and bandwidths of 500 MHz – 1 GHz.
-
http://dspace.mit.edu/bitstream/handle/1721.1/10603/36148010-MIT.pdf?sequence=2
The energy dependence of the light intensity was measured using a calibrated high speed silicon photodiode connected to a digital oscilloscope.
-
Lasing effect in blue phase liquid crystal
The high speed silicon photodiode detector (DET110, Thorlabs) which was connected to the digital oscilloscope (DPO 4034, Tektronix) was employed to capture the scattering signals of the pump laser.
-
Feasibility of fiber optic displacement sensor scanning system for imaging of dental cavity
The photodetector used was a high speed silicon photodiode with an optical response extending from 400 to 1100 nm, making it compatible with a wide range of visible light including the 633 nm visible red He-Ne laser used in this set …
-
Scaling issues in intracavity contacted oxide-aperture VCSELs for high-speed operation
the laser chip in order to avoid the external parasitic of a bonding wire, ~2 meters of multimode fiber, an Anritsu spectrum analyzer MS2667C, and a high speed Silicon photodiode (25GHz) with a low noise preamplifier.
-
Assessment of opto-mechanical behavior of biological samples by interferometry
Before reaching the target a portion of the beam is separated by a glass plate and reflected on a biased high speed silicon photodiode (Thorlabs, DET10A, 200-1100 nm, 1 ns rise time) for measuring energy of each pulse and providing a …
-
Inertial fusion energy target injection, tracking, and beam pointing
Some high speed silicon photodiodes , have a response time of less than one nanosecond and an active area of diameter 0.4 mm.
-
Fiber-Optic Salinity Sensor Using Fiber-Optic Displacement Measurement With Flat and Concave Mirror
The photodetector is a high speed silicon pho- todiode with an optical response which extends from 400 to 1100 nm, making it compatible with a wide range of visible light including the 594-nm visible yellow He–Ne laser used in this setup.