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Supplier: First Sensor AG
Description: These high-speed epitaxial photodiodes are ideal for VIS and NIR applications with low operating voltages. Features: Photodiodes with epitaxial layer structure for fast rise times at low reverse voltages. Epitaxial layer thickness optimized for highest speed and
- Spectral Response Range: 400 to 950 nm
- Active Area Diameter or Length: 0.5 mm
- Rise Time: 0.4 ns
- Dark Current: 0.1 nA
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Supplier: OSI Optoelectronics
Description: The Large Active Area High Speed Detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the maximum allowable value, for achieving even faster response times in Nano seconds.
- Sensitivity: 0.58 A/W
- Spectral Response Range: 350 to 1,100 nm
- Rise Time: 3 ns
- Operating Temperature: -40 to 100 C
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Supplier: Hamamatsu Photonics Europe
Description: Large area, high-speed Si PIN photodiode The S3071 is a Si PIN photodiode having a relatively large photosensitive area yet it offers excellent frequency response at 40 MHz. This photodiode is suitable for FSO(free space optics) and high-speed pulsed
- Sensitivity: 0.54 A/W
- Spectral Response Range: 320 to 1,060 nm
- Active Area Diameter or Length: 5.000000000000001 mm
- Active Area Height: 5.000000000000001 mm
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics' family of large active area and high speed silicon detector series are designed to reliably support short-haul data communications applications. All exhibit low dark current and low capacitance at 3.3V bias. The base unit comes in a 3 pin TO-46 package with
- Sensitivity: 0.5 A/W
- Spectral Response Range: 1,100 to 1,650 nm
- Active Area Diameter or Length: 0.66 mm
- Rise Time: 1.1 ns
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Supplier: Newport MKS
Description: The 818-BB-27 High Speed UV Enhanced Silicon Optical Detector consists of a silicon detector with an enhanced ultraviolet response, making it well suited for the fourth harmonic Nd:YAG, YLF or Glass Lasers and Excimer Lasers. Additionally, its large 2.55 mm active
- Receiver Rise Time: 3 ns
- Bandwidth: 0 to 118 MHz
- Features: Other
- Receiver Type: PIN
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Supplier: Marktech Optoelectronics
Description: optical switching and sensing requiring high speed, consistency and high reliability.Marktech manufactured InP Pin Photo Diodes using InGaAs/InP technology have a spectral sensitivity in the 800nm to 1750nm range for applications requiring low dark current, high
- Sensitivity: 35 to 50 A/W
- Spectral Response Range: 400 to 1,100 nm
- Active Area Diameter or Length: 0.04 mm
- Active Area Height: 230 mm
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Supplier: Newport MKS
Description: The 818-BB-21 High Speed Silicon Optical Detector consists of a free-space 320 to 1000 nm Battery Biased Silicon detector with a 0.40 mm active diameter and a <300 ps rise time. It includes a built-in bias supply consisting of three standard 3 V lithium cells (9 V total
- Receiver Rise Time: 0.3 ns
- Bandwidth: 0 to 1,200 MHz
- Features: Other
- Receiver Type: PIN
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Supplier: First Sensor AG
Description: Due to their high gain and speed, these APDs are suitable for many industrial applications such as distance measurement, laser scanning and optical communication. Special features Maximum sensitivity at 800 nm Optimized for high speeds Low temperature coefficient Fast
- Spectral Response Range: 650 to 850 nm
- Active Area Diameter or Length: 0.5 mm
- Rise Time: 0.35 ns
- Dark Current: 0.5 to 1 nA
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Supplier: First Sensor AG
Description: These avalanche photodiodes are suitable for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources. Features: High quantum yield at 1064 nm High sensitivity Low noise High speed Optimized for longer wavelengths
- Spectral Response Range: 850 to 1,064 nm
- Active Area Diameter or Length: 4 mm
- Rise Time: 6 ns
- Dark Current: 50 nA
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Supplier: Micropac Industries, Inc.
Description: The 61063 is a Silicon Photodiode in a package designed to be mounted in a double-clad printed circuit board. It is lensed for minimum response to stray light. Fast operating speed makes this device the best option in applications where speed considerations predominate.
- Sensitivity: 100 A/W
- Spectral Response Range: 290 to 1,200 nm
- Rise Time: 300 ns
- Operating Temperature: -55 to 125 C
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Supplier: Newport MKS
Description: The 818-BB-45 High Speed GaAs Detector consists of a free-space 500 to 890 nm battery biased GaAs photodetector with a 60 µm active diameter and a <30 ps rise time. It includes a built-in bias supply consisting of one standard 3V lithium cells and a SMA connector output. The
- Receiver Rise Time: 0.03 ns
- Bandwidth: 0 to 12,500 MHz
- Features: Other
- Receiver Type: PIN
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Supplier: Newport MKS
Description: The 818-BB-35 High Speed InGaAs Detector consists of a free-space 830 to 1650 nm Battery Biased InGaAs photodetector with a 0.032 mm active diameter and a <25 ps rise time. It includes a built-in bias supply consisting of two standard 3 V lithium cells (6V total bias) and a 50 ohm BNC
- Receiver Rise Time: 0.025 ns
- Bandwidth: 0 to 15,000 MHz
- Features: Other
- Receiver Type: PIN
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Supplier: Electro Optical Components, Inc.
Description: EOC offers a variety of silicon photodiode options from IFW Optronics: Silicon Photodiodes with an Integrated Low Noise JFET Amplifier Quadrant Photodiodes
- Spectral Response Range: 400 to 1,100 nm
- Active Area Diameter or Length: 2.5000000000000004 to 7.900000000000001 mm
- Photodiode Spectral Response: IR, Visible
- Photodiode Package: Leaded, Through Hole Technology (THT)
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Supplier: RS Components, Ltd.
Description: Photodiode Photoconductive Metal 0.2mm
- Spectral Response Range: 350 to 1,100 nm
- Photodiode Spectral Response: IR
- Features: Other
- Photodiode Material: Silicon
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Supplier: Electro Optical Components, Inc.
Description: Quadrant photodiodes are used for a variety of alignment applications including laser beams and position sensing. They are available in 2.5, 5.0 and 7.9 mm diameter active areas. Quadrant Photodetector Features Si-PIN photodiode Spectral range 400 – 1100 nm Hermetic sealed in TO-8
- Spectral Response Range: 400 to 1,100 nm
- Active Area Diameter or Length: 2.5000000000000004 to 7.900000000000001 mm
- Photodiode Spectral Response: IR, Visible
- Photodiode Package: Leaded, Through Hole Technology (THT)
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Supplier: Universal Semiconductor, Inc.
Description: Double diffused silicon diode, extruded aluminum housing
- Spectral Response Range: 400 to 1,170 nm
- Active Area Diameter or Length: 152.39991770404444 mm
- Rise Time: 500 ns
- Dark Current: 12,000 nA
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Supplier: Ophir-Spiricon Inc.
Description: Recommended for measurement of low energies and high repetition rates
- Spectral Response Range: 200 to 1,100 nm
- Active Area Diameter or Length: 10.000000000000002 mm
- Photodiode Spectral Response: IR, UV, Visible
- Photodiode Material: Silicon
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Supplier: MOXTEK, Inc.
Description: The XPIN® detector is Moxtek’s best performing Si-PIN detector. XPIN detectors use a silicon PIN diode, multi-layer collimator, and thin DuraBeryllium® window, achieving great resolution and x-ray sensitivity. The XPIN preamp provides a low-noise signal output to an analog or digital pulse
- Photodiode Type: PIN Photodiode
- Photodiode Material: Silicon
- Photodiode Spectral Response: X-ray
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Supplier: PREMA Semiconductor GmbH
Description: 3 compact Silicon Junctions on a single Die PR5020 and PR50221 are triple silicon photodiodes with three separate cathodes and one common anode. Therefore, the three segments allow to resolve two transitions. With a wider and thinner photodiode in the center of the die,
- Sensitivity: 0.58 A/W
- Operating Temperature: -40 to 85 C
- Dark Current: 0.052 nA
- Photodiode Spectral Response: IR, Visible
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Supplier: Photonique SA
Description: No Description Provided
- Spectral Response Range: 350 to 800 nm
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Rise Time: 1.8 ns
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Supplier: Clairex Technologies, Inc.
Description: Photodiodes
- Active Area Diameter or Length: 3.174998285500926 mm
- Active Area Height: 3.174998285500926 mm
- Dark Current: 10 nA
- Photodiode Package: Leaded
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Supplier: IDEA, Inc.
Description: No Description Provided
- Active Area Diameter or Length: 3 mm
- Active Area Height: 2.2 mm
- Rise Time: 6 ns
- Photodiode Spectral Response: IR
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Supplier: Universal Semiconductor, Inc.
Description: Dual axis type, diffused junction technology
- Spectral Response Range: 400 to 1,170 nm
- Active Area Diameter or Length: 11.280000000000001 mm
- Rise Time: 2,000 ns
- Dark Current: 2,000 nA
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Supplier: Photonique SA
Description: No Description Provided
- Spectral Response Range: 350 to 950 nm
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Rise Time: 5 ns
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Supplier: PREMA Semiconductor GmbH
Description: Single Photodiode with identical Outer Dimensions PR5040 is a single silicon photodiode with rectangular shape having the same outer dimensions as the segmented types PR5001-PR5030. The photodiode has a low dark current combined with a high sensitivity. The dies
- Photodiode Spectral Response: IR, Visible
- Photodiode Type: PN Photodiode
- Photodiode Material: Silicon
- Photodiode Package: Surface Mount Technology (SMT)
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Supplier: Quantum Devices, Inc.
Description: Quantum Devices offers the ability to customize a planar silicon photodiode with either single or multiple diode structures on a single chip. This configuration is a p-on-n structure and can be used to detect the presence and absence of minute quantities of light. The linearity of this
- Photodiode Type: PN Photodiode
- Photodiode Material: Silicon
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Supplier: IDEA, Inc.
Description: No Description Provided
- Active Area Diameter or Length: 4.800000000000001 mm
- Active Area Height: 6.6000000000000005 mm
- Rise Time: 50 ns
- Photodiode Spectral Response: IR
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Supplier: PREMA Semiconductor GmbH
Description: Two differential pairs of photodiodes with amplifiers The optical sensor IC PR5401 consists of two pairs of photodiodes placed in opposite quadrants with differential amplifiers. If illuminated uniformly, the output is Vcc/2, but depends on the balance of illumination on each pair.
- Spectral Response Range: 950 nm
- Operating Temperature: -40 to 85 C
- Array: Array
- Photodiode Spectral Response: IR, Visible
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Supplier: Ophir-Spiricon Inc.
Description: Scanned or static beams , dynamic background response
- Spectral Response Range: 633 to 675 nm
- Active Area Diameter or Length: 10.000000000000002 mm
- Active Area Height: 10.000000000000002 mm
- Photodiode Material: Silicon
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Supplier: Photonique SA
Description: No Description Provided
- Spectral Response Range: 310 to 850 nm
- Active Area Diameter or Length: 2.1 mm
- Active Area Height: 2.1 mm
- Rise Time: 0.6 ns
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A Nanosecond Streak Camera With Simplified Streak Tube
After going through a light splitter, the laser beam is divided into two beams, and a beam of which is entered the streak tube, another is input on a high speed silicon photodiode .
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Master oscillator-amplifier Nd:YAG laser with a SBS phase-conjugate mirror
PDJ, PD2, PD3) : high speed silicon photodiodes .
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Springer Handbook of Experimental Solid Mechanics
The interferometric signals are captured by high speed silicon photodiodes (with rise times < 1 ns) and recorded on high-speed digitizing os- cilloscopes, using typical sampling rates of 1 ns/point and bandwidths of 500 MHz – 1 GHz.
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http://dspace.mit.edu/bitstream/handle/1721.1/10603/36148010-MIT.pdf?sequence=2
The energy dependence of the light intensity was measured using a calibrated high speed silicon photodiode connected to a digital oscilloscope.
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Lasing effect in blue phase liquid crystal
The high speed silicon photodiode detector (DET110, Thorlabs) which was connected to the digital oscilloscope (DPO 4034, Tektronix) was employed to capture the scattering signals of the pump laser.
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Feasibility of fiber optic displacement sensor scanning system for imaging of dental cavity
The photodetector used was a high speed silicon photodiode with an optical response extending from 400 to 1100 nm, making it compatible with a wide range of visible light including the 633 nm visible red He-Ne laser used in this set …
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Scaling issues in intracavity contacted oxide-aperture VCSELs for high-speed operation
the laser chip in order to avoid the external parasitic of a bonding wire, ~2 meters of multimode fiber, an Anritsu spectrum analyzer MS2667C, and a high speed Silicon photodiode (25GHz) with a low noise preamplifier.
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Assessment of opto-mechanical behavior of biological samples by interferometry
Before reaching the target a portion of the beam is separated by a glass plate and reflected on a biased high speed silicon photodiode (Thorlabs, DET10A, 200-1100 nm, 1 ns rise time) for measuring energy of each pulse and providing a …
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Inertial fusion energy target injection, tracking, and beam pointing
Some high speed silicon photodiodes , have a response time of less than one nanosecond and an active area of diameter 0.4 mm.
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Fiber-Optic Salinity Sensor Using Fiber-Optic Displacement Measurement With Flat and Concave Mirror
The photodetector is a high speed silicon pho- todiode with an optical response which extends from 400 to 1100 nm, making it compatible with a wide range of visible light including the 594-nm visible yellow He–Ne laser used in this setup.