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Supplier: Fuji Electric Corp. of America
Description: Fuji Electric’s new UPS7300WX-T3U is an innovative transformer-less UPS designed for data centers and commercial applications, utilizing our patented RB-IGBT Technology and AT-NPC 3-Level Circuit Topology to deliver up to 97.5% efficiency and unparalleled reliability.
- Volt-Amp Rating: 225 to 330 kVA
- Maximum Input Current: 307 to 439 amps
- Full Load Output Current: 271 to 397 amps
- Operating Temperature: 32 to 104 F
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Supplier: Richardson RFPD
Description: IGBT Module|•Compact design|•One screw mounting|•Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB)|•High short circuit capability|•Ultra Fast NPT IGBT technology|•Vce,sat with positive coefficient|Typical Applications:|•Switching (not for
- Features: IGBT, Other
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Supplier: ROHM Semiconductor GmbH
Description: RGT20NL65 is a IGBT with low collector - emitter saturation voltage, suitable for general inverter, UPS, power conditioner, welder.
- PD: 106,000 milliwatts
- TJ: -55 to 175 C
- Transistor Grade / Operating Range: Commercial
- Features: IGBT, Other
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Supplier: ROHM Semiconductor GmbH
Description: Application: General Inverter, UPS, Power Conditioner, Welding For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
- TJ: -40 to 175 C
- Transistor Grade / Operating Range: Commercial
- Features: IGBT
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Supplier: Fuji Electric Corp. of America
Description: Fuji Electric’s Discrete IGBTs are used in applications such as UPS, power conditioning subsystems, communication equipment, servers, and EV chargers. By applying the technology we cultivated in our latest 7th generation IGBT module, the new “XS” series has been able to
- VCES: 600 volts
- IC(max): 85 amps
- Switching Speed: 20 kHz
- TJ: 175 C
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Supplier: ROHM Semiconductor GmbH
Description: The RGS50TSX2 is a 10μs SCSOA guaranteed IGBT, suitable for PFC, UPS, IH and Power Conditioner. The RGS series delivers low conduction loss that contributes to reducing size and to improving efficiency of applications.
- PD: 395,000 milliwatts
- TJ: -55 to 175 C
- Transistor Grade / Operating Range: Commercial
- Features: IGBT, Other
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Supplier: ROHM Semiconductor GmbH
Description: The RGS80TSX2 is a 10μs SCSOA guaranteed IGBT, suitable for PFC, UPS, IH and Power Conditioner. The RGS series delivers low conduction loss that contributes to reducing size and to improving efficiency of applications.
- PD: 555,000 milliwatts
- TJ: -55 to 175 C
- Transistor Grade / Operating Range: Commercial
- Features: IGBT, Other
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Supplier: Infineon Technologies AG
Description: short circuit capability Self limiting short circuit current Low VCEsat Positive temperature coefficient High dynamic robustness High creepage and clearance distances Benefits High power density For compact inverter designs Standardized housing Applications Motor Control Power
- VCES: 4,500 volts
- VCE(on): 2.3 volts
- IC(max): 2,400 amps
- Features: IGBT, Other
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Supplier: Infineon Technologies AG
Description: 62 mm 650 V, 300 A dual IGBT module with TRENCHSTOP™ IGBT4 and emitter controlled diode. Summary of Features Increased blocking voltage capability to 650V Extended Operation Temperature Tvj op High Short Circuit Capability, Self Limiting Short Circuit Current 2.5 kV AC 1min
- VCES: 650 volts
- VCE(on): 1.55 volts
- IC(max): 300 amps
- Features: IGBT, Other
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Supplier: Infineon Technologies AG
Description: IHV-B 4500 V, 1200 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate - The best solution for your industry applications. Summary of Features High DC stability High short circuit capability Self limiting short
- VCES: 4,500 volts
- VCE(on): 2.1 volts
- IC(max): 2,400 amps
- Features: IGBT, Other
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Insulated Gate Bipolar Transistors (IGBT) - Power - IGBT - IGBT Modules - FF900R12IP4 -- FF900R12IP4Supplier: Infineon Technologies AG
Description: PrimePACK™ 2 1200 V, 900 A half-bridge dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode, NTC and soft switching chip. Also available with pre-applied Thermal Interface Material. Summary of Features Extended operation temperature Tvj op High DC stability High short
- VCE(on): 1.7 volts
- IC(max): 900 amps
- Features: IGBT, Other
- Transistor Grade / Operating Range: Industrial
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Supplier: SOCOMEC
Description: Socomec’s IP+ Rail is the very latest in UPS technology for the mass transportation sector and has been engineered specifically to provide optimum energy efficiency for high performance critical power applications - in the most challenging operating environments. Key Benefits • Full Range
- Input Voltage Range: 400 volts
- Volt-Amp Rating: 10 to 80 kVA
- Runtime at Full Load: 5 to 20 minutes
- Operating Temperature: 32 to 104 F
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Description: MORNSUN power module for IGBT/SiC gate driver adopts the mode of common ground outputs internally for better energy provision of IGBT driver's turn-on and turn-off. Meanwhile, this IGBT driver power supply features output short-circuit protection, which can be widely used
- DC Input Voltage: 15 volts
- DC Output Voltage: -8.7 to 15 volts
- DC Output Current: -40 to 80 amps
- Type: DC/DC Converter
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Supplier: Littelfuse, Inc.
Description: This family of 1700V IGBTs are rugged NPT devices targeted for high voltage applications, requiring 10us short circuit withstand capability. They are particularly suitable for high voltage switching applications. We offer its fast switching “A” version 1700V NPT IGBTs in co-pack
- VCES: 1,700 volts
- VCE(on): 4 volts
- IC(max): 20 amps
- Features: IGBT, Other
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Supplier: Fuji Electric Corp. of America
Description: The 2-Pack incorporates a half-bridge circuit.We have a product lineup compatible with a wide range of converter capacities such as those needed for UPS, general-purpose inverters, electric railroads, and mega solar. High reliability is required for infrastructure applications, and the
- Output Voltage: 1,700 volts
- Output Current: 150 amps
- Configuration: Half-Bridge
- Technology: IGBT
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Supplier: Nexperia B.V.
Description: The NGW75T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a
- Transistor Grade / Operating Range: Industrial
- Features: Other
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Supplier: Nexperia B.V.
Description: The NGW60T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW60T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a
- Transistor Grade / Operating Range: Industrial
- Features: Other
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Supplier: Nexperia B.V.
Description: The NGW30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit
- Transistor Grade / Operating Range: Industrial
- Features: Other
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Supplier: Nexperia B.V.
Description: NGFP15T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. NGFP15T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit
- Transistor Grade / Operating Range: Industrial
- Features: Other
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Supplier: Mitsubishi Electric Power Products, Inc.
Description: The 9900A UPS system uses the most advanced Insulated Gate Bipolar Transistors (IGBT) in both the converter and Inverter. This unique combination simply means our 9900A UPS offers superior reliability, performance, and is the most efficient true on-line double conversion
- Volt-Amp Rating: 80 to 225 kVA
- Operating Temperature: 32 to 104 F
- Features: 480, Bypass Switch, Other, Parallel
- Compliance: FCC
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Supplier: Richardson RFPD
Description: High Power IGBT Driver|•Single driver circuit for high power IGBTs|•SKHI 10/17 drives all SEMIKRON IGBTs with VCES up to 1700 V (factory adjustment of VCES-monitoring for 1200V-IGBT)|•CMOS/TTL (HCMOS) compatible input buffers|•Short circuit protection
- Peak Output Current: 0.1 amps
- Features: Other
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Supplier: Shenzhen Liron Electronics Co., Ltd
Description: FSN series is a snubber plastic shell film capacitor that matches following SPEC. 1. FSN series snubber plastic shell film capacitor is suitable for the IGBT module circuit in solar inverter, wind power converter, inverter, electric locomotive, UPS, EPS, SVG and other power
- Capacitance Range: 0.047 to 12 microF
- Capacitance Tolerance: 5 (+/- %)
- DC Rated Voltage Range (WVDC): 630 to 3,000 volts
- Operating Temperature: -40 to 105 C
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Supplier: Shenzhen Liron Electronics Co., Ltd
Description: FSN series is a snubber capacitor PET tape, axial, pin type film capacitor that matches following SPEC. 1. FSN series snubber capacitor PET tape, axial, pin type film capacitor is suitable for the IGBT module circuit in solar inverter, wind power converter, inverter, electric
- Capacitance Range: 0.047 to 12 microF
- Capacitance Tolerance: 5 (+/- %)
- DC Rated Voltage Range (WVDC): 630 to 3,000 volts
- Operating Temperature: -40 to 105 C
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Supplier: Aerovox Corp.
Description: Snubber capacitors are designed for the high peak current operation required for protection against transient voltages. Aerovox IGBT Snubber capacitors are offered in standard voltages of 630 VDC to 3,000 VDC for 100,000-hour operation. They are available with direct IGBT module
- Capacitance Range: 2 microF
- Capacitance Tolerance: 10 (+/- %)
- DC Rated Voltage Range (WVDC): 630 volts
- AC Rated Voltage (WVAC): 300 volts
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Supplier: Littelfuse, Inc.
Description: Littelfuse PSR Series High-Speed Square Body Fuses are specially designed for protection of power semiconductor devices such as diodes, triacs, IGBTs, SCRs, MOSFETs and other solid-state devices that are typically designed into power conversion and power conditioning equipment. Variable
- Current Rating: 550 amps
- Fuse Type: Blade Type
- Features: Fast Acting, Other
- Approvals / Standards: RoHS Compliant
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Supplier: Littelfuse, Inc.
Description: Littelfuse PSR Series High-Speed Square Body Fuses are specially designed for protection of power semiconductor devices such as diodes, triacs, IGBTs, SCRs, MOSFETs and other solid-state devices that are typically designed into power conversion and power conditioning equipment. Variable
- Current Rating: 1,100 amps
- Fuse Type: Blade Type
- Features: Fast Acting, Other
- Approvals / Standards: RoHS Compliant
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Supplier: Richardson RFPD
Description: IGBTs used in a wide variety of inverter and motor control applications. The Si826x isolated gate drivers utilize Skyworks Solutions' proprietary silicon isolation technology, supporting up to 5.0 kVRMS withstand voltage per UL1577 and 10kV surge protection per VDE 0884-10. This
- Peak Output Current: 0.6 amps
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The Vicfuse VSP-000 is a high-performance semiconductor protection fuse designed for industrial power electronics applications requiring fast, reliable overcurrent and short-circuit protection. Engineered for sensitive devices, the VSP-000 safeguards IGBTs (read more)
Browse Circuit Protection Components Datasheets for VICFUSE -
Modern power electronics systems using IGBT modules require extremely fast fault protection to limit energy let-through during short-circuit conditions. The VICFUSE VSP-0000IGBT (read more)
Browse Circuit Protection Components Datasheets for VICFUSE
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Cost-effective bidirectional chopper-based battery link UPS with common input-output bus line and its control scheme
Abstract- This paper presents non-isolated prototype ofinput-outputcommon bus line UPS circuit topology using IGBT modules, which incorporates bidirectional converter circuit for battery bank interface and its related-specific current-mode control strategy.
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Alternative Power Storages
Fig. 3: Interface between an SMES and the DC link circuit of a UPS set using an IGBT converter .
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Feasible compact UPS incorporating current-mode controlled two-quadrant chopper-fed battery link
input-output common bus line UPS circuit topology using six in one IGBT module, which incorporates a bidirectional chopper-linked battery bank with specific current-mode control strategy.
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High efficiency multilevel uninterruptible power supply
Fig. 10 shows the circuit representation of the customized IGBT power module for the proposed UPS .
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Redundant High-Density High-Efficiency Double-Conversion Uninterruptible Power System
Fig. 11 shows the circuit of the custom IGBT power module used in the proposed UPS .
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MW-rated power electronics for sustainable and low carbon industrial revolution
The control flexibility and the IGBT development further yielded much more efficient UPS with the multi-level circuit topology as shown in Fig. 15.
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Influence of electron irradiation on the switching speed in insulated gate bipolar transistors
There are many application ranges for IGBTs , such as line operated phase control circuits , motor drives, and UPS .
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Transformerless UPS Systems (.pdf)
In the event a fault occurs (including short circuits) which produces currents exceeding the current limits of the UPS (input or output), the control circuit will immediately stop firing the IGBTs and initiate the opening and closing of the contactors.
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Redundant, High Density, High Efficiency Double Conversion Uninterruptible Power System
Fig. 11 shows the circuit and the external appearance of the customized IGBT power module used in the proposed UPS .
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The Power of Green: Mitsubishi 9900A Series High Efficiency True On-Line Double Conversion Uninterruptible Power Supply (UPS) (.pdf)
For UPS Systems with 480V classification, a Two-Level circuit typically corresponds to utilizing 1200V rated IGBT devices for the converter structure.