-
Supplier: Hamamatsu Photonics
Description: 46-element InGaAs array
- Array: Yes
- Dark Current: 1.25 nA
- Photodiode Material: Indium Gallium Arsenide
- Sensitivity: 0.9500 A/W
-
Supplier: Hamamatsu Photonics
Description: 16-element InGaAs array
- Array: Yes
- Dark Current: 2.5 nA
- Photodiode Material: Indium Gallium Arsenide
- Sensitivity: 0.9500 A/W
-
Supplier: Hamamatsu Photonics
Description: 32-element InGaAs array
- Array: Yes
- Dark Current: 1.25 nA
- Photodiode Material: Indium Gallium Arsenide
- Sensitivity: 0.9500 A/W
-
-
Supplier: Hamamatsu Photonics
Description: Photodiode array for DWDM monitor
- Array: Yes
- Dark Current: 0.2000 nA
- Photodiode Material: Indium Gallium Arsenide
- Sensitivity: 0.9500 A/W
-
Supplier: OSI Optoelectronics
Description: FCI-InGaAs-300B1XX series are multifunctional backside illuminated photodiode/arrays. They come standard in a single element diode or 4 - or 8- elements array with active area of 300µm. These back illuminated InGaAs photodiode/arrays are designed to be flip chip mounted
- Active Area Diameter or Length: 0.3000 mm
- Dark Current: 0.0500 nA
- Operating Temperature: 0.0 to 70 C
- PN, PIN, or Avalanche: PIN Photodiode
-
Supplier: Marktech Optoelectronics
Description: Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for applications such as optical switching and sensing requiring high speed, consistency and high reliability. Marktech
- Active Area Diameter or Length: 0.1000 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Package / Mounting: Other
-
Supplier: Xenics nv
Description: The high resolution Xlin-1.7-3000 InGaAs detector is specifically designed for earth observation. The detector is based on mechanical butting of three InGaAs photodiode arrays with each 1024 pixels on a 25 µm pixel pitch, forming a nearly continuous line of 2900 pixels.
- Array Type: Linear Array
- Operating Temperature Range: -40 to 85 C
- Output Channels: 3
- Spectral Range: 0.9000 to 1.7 µm
-
Supplier: Xenics nv
Description: The high resolution Xlin-1.7-3000 InGaAs detector is specifically designed for earth observation. The detector is based on mechanical butting of three InGaAs photodiode arrays with each 1024 pixels on a 25 µm pixel pitch, forming a nearly continuous line of 2900 pixels.
- Horizontal Resolution: 3 lines
- Imaging Technology / Camera Type: Other
- Operating Temperature: -40 to 185 F
- Performance Features: Line Scan
Find Suppliers by Category Top
Featured Products Top
-
Hamamatsu Photonics introduces its G1719X series of InGaAs PIN Photodiodes for long wavelengths. These compact, surface-mounted NIR sensors with low dark current are designed for infrared applications, including gas sensing, laser applied measurements, and remote temperature sensing (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics -
Hamamatsu Photonics is pleased to introduce the G15978-0020P, an exciting new InGaAs photodiode that redefines the possibilities in compact sensor technology. Designed specifically for researchers, engineers, and industrial applications, this new photodiode is ideally suited for accurate (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics -
spectrophotometry. This new range of sensors offers numerous advantages. One of its hallmark features is high sensitivity across the near-infrared range of 0.9 to 2.1 µm, made possible by the combination of an InGaAs photodiode array and a CMOS chip. The (read more)
Browse Uncategorized Products Datasheets for Hamamatsu Photonics
More Information Top
Indicates content that may require registration and/or purchase.
-
Two Dimensional 32�?32 InGaAs/InP Photodiode Arrays and Dark Current Characteristics Limited by the Diffusion and Generation-Recombination
In PiN InGaAs photodiode array structure, the diffusion currents of the each pixel due to the thermally generated minority carriers diffusing into the depletion region are accumulated to reach total leakage current.
-
2-dimensional InGaAs/InP photodiode arrays on semi-insulating InP for laser radar and dark current characteristics
In this PiN InGaAs photodiode array structure, the diffusion currents of the each pixels due to the thermally generated minority carriers diffusing into the depletion region are accumulated to reach total leakage current [1], [2], [3].
-
Ultra-low dark current InGaAs technology for focal plane arrays for low-light level visible-shortwave infrared imaging
InGaAs photodiode array was hybridized to a low noise readout integrated circuit, also developed under this program.
-
Indium gallium arsenide photodiode arrays for optical communications
Indium gallium arsenide ( InGaAs ) photodiode arrays are used in a wide variety of optical communications-related applications.
-
Multi‐channel micro‐Raman spectroscopy with near‐infrared excitation. II
The basic operation mode of the InGaAs photodiode array is similar to that described previously for the Judson germanium detector (capacitive discharge mode).
-
Spectral properties of ultra-broadband entangled photons generated from chirped-MgSLT crystal towards monocycle entanglement generation
For the collinear condition, single-photon spectra are detected using a Si-CCD and an InGaAs photodiode array with a monochromator, while for a noncollinear condition, an NbN meander-type superconducting single photon detector (SNSPD) and an InP/GaAs photomultiplier tube (PMT) with …
-
High dynamic solutions for short-wavelength infrared imaging based on InGaAs
This paper presents several modules and camera based on InGaAs photodiode arrays from the III-VLab.
-
Short wave infrared InGaAs focal plane arrays detector: the performance optimization of photosensitive element
Hybrid 2-D staring InGaAs focal plane array is integrated by InGaAs photodiode array and Si-CMOS ROIC with flip-chip bonding technique, and operates under back illuminated .
-
Toward a single-chip TECless/NUCless InGaAs SWIR camera with 120-dB intrinsic operation dynamic range
The NEI has been measured to be 3,71E+09 ph/s/cm2 with 92 equivalent noise photons at 25Hz frame rate, better than the same architecture of InGaAs photodiode array hybridized on an Indigo ROIC ISC9809 with a pitch of 30 µm for …
-
Indium gallium arsenide imaging with smaller cameras, higher-resolution arrays, and greater material sensitivity
Indium Gallium Arsenide ( InGaAs ) photodiode arrays have numerous commercial, industrial, and military applications.