InGaAs Photodiode Array

Description: FCI-InGaAs-300B1XX series are multifunctional backside illuminated photodiode/arrays. They come standard in a single element diode or 4 - or 8- elements array with active area of 300µm. These back illuminated InGaAs photodiode/arrays are designed to

• Sensitivity: 0.85 A/W
• Spectral Response Range: 900 to 1,700 nm
• Active Area Diameter or Length: 0.30000000000000004 mm
• Rise Time: 3.5 ns

Description: 46-element InGaAs array

• Sensitivity: 0.95 A/W
• Spectral Response Range: 900 to 1,700 nm
• Dark Current: 1.25 nA
• Array: Array

Description: FCI-InGaAs-XXM series with 4, 8, 12 and 16 channels are parts of OSI Optoelectronics' high speed IR sensitive photodetector arrays. Each AR coated element is capable of 2.5Gbps data rates exhibiting high responsivity from 1100nm to 1620nm. FCI-InGaAs-XXM, which comes standard on

• Sensitivity: 0.5 A/W
• Spectral Response Range: 400 to 1,000 nm
• Operating Temperature: -20 to 70 C
• Photodiode Spectral Response: IR

Description: Quadrant type

• Sensitivity: 0.95 A/W
• Spectral Response Range: 900 to 1,700 nm
• Active Area Diameter or Length: 2 mm
• Active Area Height: 2 mm

Description: Surface mountable 16-element array The S15158 is a 16-element Si PIN photodiode array in surface mountable chip carrier package. It can be mounted using solder reflow and used in a wide variety of applications such as spectrophotometers and distance measurement.

• Sensitivity: 0.63 A/W
• Spectral Response Range: 380 to 1,100 nm
• Dark Current: 10 nA
• Array: Array

Description: The FCI-GaAs-XXm is a 4 or 12 element GaAs PIN photodetector array designed for high speed fiber receiver and monitoring applications. The 70µm diameter elements are capable of 2.5Gbps data rates. AR coated and sensitive to telecommunication wavelengths, this array is a perfect

• Sensitivity: 0.63 A/W
• Spectral Response Range: 1,100 to 1,650 nm
• Active Area Diameter or Length: 0.07 mm
• Operating Temperature: -40 to 85 C

Description: These avalanche photodiodes were developed specifically for LIDAR applications and laser rangefinders. The series of products contains linear and matrix arrays with multiple sensors on one monolithic die, e.g. 8, 16, 64 pixels. Special features Fast rise time in 900 nm range Low gain

• Spectral Response Range: 850 to 1,070 nm
• Active Area Diameter or Length: 4 mm
• Rise Time: 5 ns
• Dark Current: 7 to 75 nA

Description: Photodiode array combined with signal processing IC The S11865/S11866 series are Si photodiode arrays combined with a signal processing IC chip. X-ray tolerance has been improved compared to the previous products (S8865/S8866 series). The signal processing IC chip is

• Spectral Response Range: 200 to 1,000 nm
• Array: Array
• Photodiode Material: Silicon
• Photodiode Spectral Response: X-ray

Description: Multichannel array photodetectors consist of a number of single element photodiodes laid adjacent to each other forming a one-dimensional sensing area common cathode substrate. They can perform simultaneous measurements of a moving beam or beams of many wavelengths. They feature low

• Sensitivity: 0.5 A/W
• Spectral Response Range: 200 to 1,100 nm
• Active Area Diameter or Length: 6.449999999999999 mm
• Active Area Height: 0.28 mm

Description: Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for applications such as optical switching and sensing requiring high speed, consistency and high reliability. Marktech manufactured InP Pin

• Active Area Diameter or Length: 1.5 mm
• Photodiode Material: Indium Gallium Arsenide
• Features: Other
• Photodiode Type: PIN Photodiode

Description: range over several orders of magnitude, from 10 picowatt/cm2 to several hundred MW/cm2. Our knowledgeable and friendly staff are available to support the design of photodiodes from concept through final application of the product in manufacturing. Design flexibility has made

• Photodiode Type: PN Photodiode
• Photodiode Material: Silicon

Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time in 900 nm range

• Spectral Response Range: 750 to 930 nm
• Active Area Diameter or Length: 1 mm
• Rise Time: 2 ns
• Dark Current: 2 nA

Description: Two differential pairs of photodiodes with amplifiers The optical sensor IC PR5401 consists of two pairs of photodiodes placed in opposite quadrants with differential amplifiers. If illuminated uniformly, the output is Vcc/2, but depends on the balance of illumination on each pair.

• Spectral Response Range: 950 nm
• Operating Temperature: -40 to 85 C
• Array: Array
• Photodiode Spectral Response: IR, Visible

Description: LED Microsensor NT LLC is focused on developing and manufacturing optoelectronic devices for the mid-infrared spectral range. The company offers a wide range of Light Emitting Diodes (LEDs), LED arrays and spectral matched Photodiodes (PD) that cover the spectral range from 1600 to

• Sensitivity: 0.7 to 1.6 A/W
• Active Area Diameter or Length: 0.30000000000000004 to 1 mm
• Dark Current: 10,000 to 25,000,000 nA
• Noise Equivalent Power (NEP): 0.0000000000009 to 0.00000000006 W/Hz^½

Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time in 900 nm range

• Spectral Response Range: 750 to 930 nm
• Active Area Diameter or Length: 0.23 mm
• Rise Time: 0.5 ns
• Dark Current: 0.5 to 1 nA

Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time in 900 nm range

• Rise Time: 0.5 ns
• Dark Current: 0.5 to 5 nA
• Photodiode Type: Avalanche Photodiode
• Photodiode Spectral Response: IR

Description: Manufacturer: OPTEK Technologies Win Source Part Number: 1234009-OPR2100 Manufacturer Homepage: www.optekinc.com Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Description: The 61060 is a Silicon Photodiode in a unique 0.080 diameter coaxial package designed to be mounted in arrays. Fast operating speed makes this device the best option in applications where speed consideration predominate. It is available with a wide angle flat lens or narrow angle domed

• Sensitivity: 100 A/W
• Spectral Response Range: 290 to 1,200 nm
• Rise Time: 300 ns
• Operating Temperature: -55 to 125 C

Description: The high resolution Xlin-1.7-3000 InGaAs detector is specifically designed for earth observation. The detector is based on mechanical butting of three InGaAs photodiode arrays with each 1024 pixels on a 25 µm pixel pitch, forming a nearly continuous line of 2900 pixels.

• Spectral Range: 0.9 to 1.7 µm
• Output Channels: 3
• Operating Temperature Range: -40 to 85 C
• Array Type: Linear Array

Description: The TCS3404 digital color light sensor is designed to accurately derive the color chromaticity and illuminance (intensity) of ambient light and provide a digital output with 16-bits of resolution. The devices include an 8 × 2 array of filtered photodiodes, analog-to-digital converters,

• Operating Temperature: -22 to 158 F
• Color Types Detected: RGB (Visible)

Description: Orion is a digital high speed line scan sensor with configurable photo-diode size. Over the SPI interface the photo-diode size can be configured to a 10μm x 10μm size or 10μm x 200μm size. Independently form the photo-diode the conversion capacitance can be configured over SPI interface. The larger

• Pixel Size: 200 µm
• Dynamic Range: 59.44 dB
• Operating Temperature: 0 to 50 C
• Supply Voltage: 3.3 volt

Description: The high resolution Xlin-1.7-3000 InGaAs detector is specifically designed for earth observation. The detector is based on mechanical butting of three InGaAs photodiode arrays with each 1024 pixels on a 25 µm pixel pitch, forming a nearly continuous line of 2900 pixels.

• Horizontal Resolution: 3 lines
• Operating Temperature: -40 to 185 F
• Vertical Resolution: 1,024 lines
• Performance: Line Scan

Description: The ISL29101 is a low power ambient Light-to-Voltage optical sensor combining a photodiode array, a current amplifier and a micropower operational amplifier on a single monolithic IC. Similar to the human eye, the photodiode array has a peak response at 550nm and spans

Description: high-sensitivity Silicon photodiode linear array & exit-port photodiode. Elevate your instruments with precise, efficient measurements of 340, 380, 405, 450, 505, 546, 578, 630, 670, & 700 nm wavelengths.

• Spectral / Wavelength Range: 340 to 700 nm

Description: high-sensitivity Silicon photodiode linear array & exit-port photodiode. Elevate your instruments with precise, efficient measurements of 340, 405, 450, 492, 510, 546, 578, 630, 700, & 800 nm wavelengths.

• Spectral / Wavelength Range: 340 to 800 nm

Description: high-sensitivity Silicon photodiode linear array & exit-port photodiode. Elevate your instruments with precise, efficient measurements of 340, 380, 405 436, 480, 510, 546, 580, 630, & 700 nm wavelengths.

• Spectral / Wavelength Range: 340 to 700 nm

Description: The Nexera SR UHPLC system is built around the SPD-M30A photodiode array detector, which has several new features for unmatched performance in sensitivity and stability, linearity, spectral resolution, and peak deconvolution. This high-end system is designed to produce the best

• Analysis Method: Analytical Analysis
• Injection Method: Auto-sampler Injection
• General Features: Built in Chromatograph
• User Interface: Digital Front Panel

Description: detector consists of a high-speed photovoltaic diode array and driver circuitry to switch on/off two discrete high voltage MOSFETs. The relay turns on (contact closes) with a minimum input current of 3mA through the input LED. The relay turns off (contact opens) with an input voltage of 0.8V

• Collector Emitter Breakdown Voltage: 5 volts
• Operating Temperature: -40 to 85 C
• Input: AC, DC
• Output: Photodiode

Description: or UHPLC for separation of carbonyl compounds followed by UV adsorption or photodiode array detection. This test method exceeds the stated applicability of TO-11A to include other carbonyl compounds that can be determined as stated in 10.2.4. This test method is suitable for

Description: The ISL29112 is a low cost, light-to-voltage silicon optical sensor combining a photodiode array, a non-linear current amplifier, and a micropower op amp on a single monolithic IC. Similar to the human eye, the photodiode array has peak sensitivity at 550nm and spans the

Description: applications. It offers 500mW optical power output at a visible wavelength of 670nm, with internal monitor photodiode in a 9mm package. The SLD 1332V high power red laser diode has an AlGaInP quantum well structure which enables it to achieve the high brightness needed for machine vision

• Wavelength Range: 770 to 840 nm
• Laser Power: 90 milliwatts
• Operating Voltage: 3 volts
• Operating Current Range: 400 milliamps

Description: high-sensitivity Silicon photodiode linear array. Elevate your instruments with precise, efficient measurements of 340, 405, 450, 505, 546, 578, 620, 670, & 700 nm wavelengths.

• Spectral / Wavelength Range: 340 to 700 nm

Description: The ISL29102 is a low cost, light-to-voltage silicon optical sensor combining a photodiode array, a nonlinear current amplifier, and a micro-power op amp on a single monolithic IC. Similar to human eyes, the photodiode array has peak sensitivity at 550nm and spans from