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Supplier: Accuris
Description: MICROCIRCUIT, HYBRID, LINEAR, POWER MOSFET, SINGLE CHANNEL, OPTOCOUPLER
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Supplier: Accuris
Description: MICROCIRCUIT, HYBRID, LINEAR, POWER MOSFET, DUAL CHANNEL, OPTOCOUPLER
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Supplier: Accuris
Description: MICROCIRCUIT, LINEAR, SINGLE POWER MOSFET DRIVER, MONOLITHIC SILICON
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Supplier: Richardson RFPD
Description: Linear MOSFETs are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec).
- rDS(on): 0.09 ohms
- Features: MOSFET, Other, Power MOSFET
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Supplier: Infineon Technologies AG
Description: for drop in replacement Designers who used this product also designed with TLE4251D | OPTIREG™ linear voltage regulators (LDO) IRFR5305 | P-Channel Power MOSFET IRFR3710Z | N-Channel Power MOSFET TLE4251D | OPTIREG™ linear voltage regulators (LDO) IRFR5305 |
- rDS(on): 0.014 ohms
- TJ: 175 C
- VGS(off): 1 to 3 volts
- Features: MOSFET, Other, Power MOSFET
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Supplier: Littelfuse, Inc.
Description: Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are
- Polarity: N-Channel
- Features: Other
- Package Type: TO-247
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Supplier: Infineon Technologies AG
Description: surface-mount power package Capable of being wave-soldered Designers who used this product also designed with IRLR3915 | N-Channel Power MOSFET TLE4251D | OPTIREG™ linear voltage regulators (LDO) IRLR3915 | N-Channel Power MOSFET TLE4251D | OPTIREG™
- rDS(on): 0.018 ohms
- TJ: 175 C
- VGS(off): 2 to 4 volts
- Features: MOSFET, Other, Power MOSFET
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Supplier: Microchip Technology, Inc.
Description: What is a Linear MOSFET? A MOSFET specifically designed to be more robust than a standard MOSFET when operated with both high voltage and high current near DC conditions (>100 msecs). The Problem with SMPS MOSFETs MOSFETs optimized for high-frequency SMPS
- Features: MOSFET
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Supplier: Microchip Technology, Inc.
Description: What is a Linear MOSFET? A MOSFET specifically designed to be more robust than a standard MOSFET when operated with both high voltage and high current near DC conditions (>100 msecs). The Problem with SMPS MOSFETs MOSFETs optimized for high-frequency SMPS
- Features: MOSFET
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Supplier: Littelfuse, Inc.
Description: When Power MOSFETs are used in the linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme
- Polarity: N-Channel
- Features: Other
- Package Type: TO-247
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Supplier: Infineon Technologies AG
Description: also designed with IPC70N04S5L-4R2 | Automotive MOSFET TDA21570 | Integrated Smart Power Stages BSC010N04LSI | N-Channel Power MOSFET OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module SLB 9670VQ2.0 | OPTIGA™ TPM - Trusted Platform Module BSL606SN | Small
- TJ: 150 C
- VGS(off): 0.95 to 0.4 volts
- Features: MOSFET, Other, Power MOSFET
- Polarity: P-Channel
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Supplier: Microchip Technology, Inc.
Description: What is a Linear MOSFET? A MOSFET specifically designed to be more robust than a standard MOSFET when operated with both high voltage and high current near DC conditions (>100 msecs). The Problem with SMPS MOSFETs MOSFETs optimized for high-frequency SMPS
- Features: MOSFET
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Supplier: Infineon Technologies AG
Description: Automotive MOSFET BSR92P | Small signal/small power MOSFET BSP317P | Small signal/small power MOSFET IRLML2244 | P-Channel Power MOSFET IPP65R190CFD7A | Automotive MOSFET BSR92P | Small signal/small power MOSFET BSP317P | Small
- rDS(on): 500 ohms
- TJ: -55 to 150 C
- VGS(off): 1.4 to 2.6 volts
- Features: MOSFET, Other, Power MOSFET
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Supplier: Newark, An Avnet Company
Description: N CHANNEL POWER MOSFET, LINEAR L2, 500V, 90A, PLUS247; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:90A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:960W; MSL:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: N CHANNEL POWER MOSFET, LINEAR L2, 500V, 15A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:15A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:300W; MSL:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: N CHANNEL POWER MOSFET, LINEAR L2, 500V, 53A, SOT-227B; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:53A; On Resistance Rds(on):0.1ohm; Transistor Mounting:Module; No. of Pins:4Pins; MSL:-RoHS Compliant: Yes
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET Standard Linear Power MOSFETs
- Features: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: LINEAR MOSFET Product overview: APL502L from Advanced Power Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing
- Features: MOSFET
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Supplier: Acme Chip Technology Co., Limited
Description: MOSFET LINEAR 600 V 49 A TO-264
- V(BR)DSS: 600 volts
- IDSS: 49,000 milliamps
- Packing Method: Bulk Pack
- Features: MOSFET, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: 1-cell, 1.2-A, linear Li-ion battery charger with integrated FET and one LED 20-HTSSOP 0 to 70 Product overview: BQ24001PWP from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level
- TJ: 0 C
- Features: MOSFET
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Supplier: Renesas Electronics Corporation
Description: sleep states (S3, S4/S5). In active states (during S0 and S1/S2), the ISL6506 uses an external N-Channel pass MOSFET to connect the outputs directly to the 3.3V input supplied by an ATX power supply, for minimal losses.brbr The ISL6506 powers up the 5VsubDUAL/sub plane by
- Package Type: SOIC / SOP
- Features: Switching Regulator
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1346801-IXTN8N150L Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Linear Package: Tube Standard Package: 10 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss):
- PD: 545,000 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET
- Polarity: N-Channel
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Supplier: Richardson RFPD
Description: Silicon Carbide Power MOSFET C3MTM MOSFET Technology Wolfspeed continues its leadership in SiC technology by offering MOSFETs in a wide variety of on-resistances and package options, enabling designers to select the right part for their applications. The efficiency gained
- rDS(on): 0.35 ohms
- Features: MOSFET, Other
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Supplier: Microchip Technology, Inc.
Description: linear regulator which provides a regulated 5V to power the MOSFET gate drive and operates up to 1.5MHz switching frequency. The MIC4600 uses an adjustable dead time circuit to prevent shoot-through in the external high and low-side MOSFETs. The MIC4600 is available in a
- Features: MOSFET
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Supplier: Nexperia B.V.
Description: New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90W to each powered device (PD). Such solutions place increased demands on the power sourcing equipment (PSE) in terms of “soft-start”, thermal management and
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
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Supplier: Renesas Electronics Corporation
Description: The ISL6549 provides the power control and protection for two output voltages in high-performance applications. The dual-output controller drives two N-Channel MOSFETs in a synchronous rectified buck converter topology and one N-Channel MOSFET in a linear configuration.
- Output Voltage (Volt): 0.8 to 13.2 volts
- Input Voltage (VIN): 10.8 to 13.2 volts
- Features: Other
- Package Type: SOIC / SOP
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Supplier: Nexperia B.V.
Description: 425 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
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Description: SINGLE N-CHANNEL LINEAR FET 80V
- V(BR)DSS: 80 volts
- IDSS: 35,000 to 333,000 milliamps
- Features: MOSFET, Other
- Packing Method: Tape Reel
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Supplier: Nexperia B.V.
Description: 325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
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Supplier: Nexperia B.V.
Description: Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 A and optimized with low gate resistance (RG) for fast-switching applications. Features and benefits Optimized for low
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
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Supplier: ODG (Origin Data Global)
Description: N-CHANNEL POWER MOSFET
- Operating Temperature: 150 C
- Input Voltage (VIN): 3.5 to 13 volts
- Features: Linear Regulator, Other
- Package Type: TO-220
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Supplier: ODG (Origin Data Global)
Description: PWR MGMT MOSFET/PWR DRIVER
- Operating Temperature: -40 to 125 C
- Input Voltage (VIN): 2.25 to 5.5 volts
- Features: Linear Regulator, Other
- Package Type: SOT23
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: LTC2926 - MOSFET-CONTROLLER PWR Product overview: LTC2926IGN#PBF from Linear Technology is a Power Management IC for power sequencing, voltage regulation, battery management, load control, and compact electronic system design. It is useful for engineers and buyers
- Operating Temperature: -40 to 85 C
- Features: Linear Regulator, Other
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Supplier: Radwell International
Description: INTELLIGENCE GATE DRIVER CORE, SCALE-1, FOR IGBT / POWER MOSFETS, SINGLE CHANNEL, 15 AMP, 12-16V. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Richardson RFPD
Description: The ADP1876 is a dual output dc-to-dc synchronous buck controller operating at 600 kHz fixed frequency with integrated drivers that drive N-channel power MOSFETs. An additional fixed voltage output, 150 mA linear regulator is available for powering low power loads. The
- Category: Development Board
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Wolfspeed offers a new family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as solar and energy storage systems, EV charging, Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, high (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
Lowest conduction and switching losses in the industry, enabling smaller, lighter and highly efficient power conversion Wolfspeed’s 3rd Generation 650V MOSFET technology from Richardson RFPD is optimized for high performance power electronics applications (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
Packing even more into the power-SO8 footprint, the LFPAK56D fits 2 MOSFETs into one robust package without compromising on performance. Allowing customers to optimise their design and apply tighter tolerance in operation. Ideal for space constrained applications, such as portable power tools, and hand-held appliances. (read more)
Browse Power MOSFET Datasheets for Nexperia B.V. -
Microchip's SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules from Richardson RFPD feature phase leg topology ranking from 700 volts (V), 538A to 1200 volts (V), 394 amperes (A) to 754 A at a case temperature (Tc) of 80 degrees Celsius. Offering higher power density and a (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
initial concept, though prototyping and on into final production. With over 600 pages of useful guidance on common topics and issues that the design engineer is likely to encounter, the handbook provides insight into the sometimes confusing and complex behaviour of MOSFETs and Power GaN FETs (read more)
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The onsemi NTTFD1D8N02P1E is a high-performance, dual N-channel power MOSFET designed to deliver superior efficiency and compactness for a wide range of applications. Featuring a small footprint of just 3.3 mm x 3.3 mm, this MOSFET is ideal for space (read more)
Browse Power Supplies Datasheets for DigiKey -
Acopian Power Supplies manufactures custom linear power supplies to match your specifications. We have millions of power supply models, but if you can't find what you need in our standard stand alone models, we can fill your needs with one of our Power Systems. We can also easily modify power supplies to meet customer requirements. (read more)
Browse Linear Power Supplies Datasheets for Acopian Power Supplies -
Nexperia today announced that the ongoing expansion of its NextPower 80 V and 100 V MOSFET portfolio is continuing apace with the release of several new LFPAK devices in industry-standard 5x6 mm and 8x8 mm footprints. These (read more)
Browse Power MOSFET Datasheets for Nexperia B.V. -
Acopian Power Supplies models may be programmed through their voltage ranges by means of external resistance. Models with adjustable current limiting have a constant-voltage/constant-current crossover characteristic, and so may be used as current regulated power supplies (read more)
Browse Power Supplies Datasheets for Acopian Power Supplies -
• AC-DC • Linear, Switching, or Unregulated • Single, dual, triple, or wide adjust output • Shipped within 3 Days (linear & unregulated) or 9 Days (switching) • 5 Year Warranty Go to www.acopian.com .......... or go to www.find aPowerSupply.com (read more)
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Use of simulation to understand and predict switching losses in a two-stage power factor corrected AC-to-DC converter
As shown in Fig. 1 we are using a two-stage AC-to-DC converter to explore the usefulness of the piecewise linear power MOSFET model to predict switching losses.
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Page 27. Semiconductor parts with 020 in root number
Linear MOSFET Power Module .
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for a 120 kW Active Load
The development of the 500V APL501JN linear power MOSFET and its 1kV APL1001JN sibling was stimulated by the expressed desire of linear MOSFET customers to have greater usable power dissipation.
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Page 10. Semiconductor parts with 602 in root number
Linear MOSFET Power Module .
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12.23.09 -- Argonne Scientists To Control Attractive Force For Nanoelectromechanical Systems
Microsemi Launches Line Of Linear MOSFET Power Modules .
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New Self-Switching Converters
It is for this reason that a special Power MOSFET design, called Linear Power MOSFET , was put forward [10].
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A phase steered parametric array for sub-bottom profiling
Each individual stave is driven by a separate ultra- linear MOSFET power amplifier module rated at 1 kW and thus with the rated electrical-to-acousticefficiency of 80%,the drive system of 13 kW has a power rating virtually identical with the…
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Analysis of IGBT modules connected in series
The model used here is based on the linear power MOSFET model [121, with suitable modifications.
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UHF band high-efficiency linear power amplifier for mobile communication satellites
A linear MOSFET power amplifier with high efficiency and low intermodulation distortion is developed by using the harmonic control and gate bias optimising technique.
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The design,
construction and calibration of a carefully
controlled source for exposure of mammalian cells to extremely
low-frequency electromagnetic fields
A 25 W continuous RMS linear MOSFET power amplifier is used to drive the coils.