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Supplier: Microchip Technology, Inc.
Description: compared to other MOSFET technologies optimized for switching applications. Additional Features High Current &>200V>100msec Used as a variable power resistor Soft start application (limit surge currents) Linear amplifier circuit Active
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: compared to other MOSFET technologies optimized for switching applications. Additional Features High Current &>200V>100msec Used as a variable power resistor Soft start application (limit surge currents) Linear amplifier circuit
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: compared to other MOSFET technologies optimized for switching applications. Additional Features High Current &>200V>100msec Used as a variable power resistor Soft start application (limit surge currents) Linear amplifier circuit Active
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: Linear MOSFETs are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec).
- Package Type: Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Richardson RFPD
Description: Power MOSFET Module|•N Channel, enhancement mode|•Avalanche characteristic|•Shor t connections and built-in gate resistors to suppress internal oscillations even in critical applications|•Isolat ed copper baseplate|•All electrical connections on top for
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Richardson RFPD
Description: Power MOSFET Module|•N Channel, enhancement mode|•Avalanche characteristics|•Sho rt internal connections avoid oscillations|•Isolat ed copper baseplates|•All electrical connections on top for easy busbaring|•Large clearance (10mm) and creepage
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Infineon Technologies AG
Description: | OPTIREG™ linear voltage regulators (LDO) IRLR3915 | N-Channel Power MOSFET TLE4251D | OPTIREG™ linear voltage regulators (LDO) IRLR3915 | N-Channel Power MOSFET TLE4251D | OPTIREG™ linear voltage regulators (LDO)
- Package Type: TO-251 / TO-252, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
- TJ: 175 C
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Supplier: Richardson RFPD
Description: Linear MOSFET Power Module (Single Switch). Application: Electronic load dedicated to power supplies and battery discharge testing. Features: Linear MOSFET, Very low stray inductance, Internal thermistor for temperature monitoring, High level of integration,
- Package Type: Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Infineon Technologies AG
Description: ) IPD60R1K5PFD7S | 500V-950V CoolMOS™ N-Channel Power MOSFET TLE9872QTW40 | MOTIX™ MCU | 32-bit motor control SoC with integrated 3-phase bridge driver FM25640B-G | F-RAM (Ferroelectric RAM) TLE42664G | OPTIREG™ linear voltage
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
- TJ: 150 C
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Supplier: Infineon Technologies AG
Description: -12V Single P-Channel Power MOSFET in a Micro 3 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
- Polarity: P-Channel, Other
- TJ: 150 C
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Supplier: Infineon Technologies AG
Description: regulators (LDO) IRFR5305 | P-Channel Power MOSFET IRFR3710Z | N-Channel Power MOSFET TLE4251D | OPTIREG™ linear voltage regulators (LDO) IRFR5305 | P-Channel Power MOSFET IRFR3710Z | N-Channel Power MOSFET TLE4251D | OPTIREG™
- Package Type: TO-251 / TO-252, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
- TJ: 175 C
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET Standard Linear Power MOSFETs
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET Standard Linear Power MOSFET
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET Linear Extended FBSOA Power MOSFET
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET L2 Linear Power MOSFET
- Transistor Type: MOSFET
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Supplier: Accuris
Description: MICROCIRCUIT, HYBRID, LINEAR, POWER MOSFET, SINGLE CHANNEL, OPTOCOUPLER
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Supplier: Littelfuse, Inc.
Description: When Power MOSFETs are used in the linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme
- Package Type: Other
- Polarity: N-Channel
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Supplier: ODG (Origin Data Global)
Description: N-CHANNEL POWER MOSFET
- IC Package Type: TO-220, Other
- Input Voltage (VIN): 3.5 to 13 volts
- Operating Temperature: 150 C
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1346728-IXTT40N50L2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Linear L2™ Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source
- PD: 540000 milliwatts
- Package Type: SOT3
- Polarity: N-Channel
- TJ: -55 to 150 C
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Supplier: Nexperia B.V.
Description: Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 A and optimizedwith low gate resistance (RG) for fast-switching applications
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Nexperia B.V.
Description: Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 A and optimized with low gate resistance (RG) for fast-switching applications
- IDSS: 150000 milliamps
- MOSFET Operating Mode: Enhancement
- PD: 106000 milliwatts
- Package Type: Other
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Supplier: Wolfspeed
Description: The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small over molded plastic package. Features
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Linear Technology Win Source Part Number: 1205214-LT1160IN Manufacturer Homepage: www.linear.com Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited
- Package Type: SOT3
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Supplier: Microchip Technology, Inc.
Description: -up, thereby reducing the continuous power dissipation to a few milliwatts. The adjustable voltage version allows trimming of the output voltage from 8.0 to 12V. This version can also be connected to an external depletion mode MOSFET for increased output current. When used in
- IC Package Type: SOIC / SOP, SOT89, TO-220, Other
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Supplier: Renesas Electronics Corporation
Description: The ISL6549 provides the power control and protection for two output voltages in high-performance applications. The dual-output controller drives two N-Channel MOSFETs in a synchronous rectified buck converter topology and one N-Channel MOSFET in a linear configuration.
- IC Package Type: SOIC / SOP, Other
- Input Voltage (VIN): 10.8 to 13.2 volts
- Output Voltage (Volt): 0.8000 to 13.2 volts
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Supplier: Win Source Electronics
Description: Manufacturer: AMIS Category: Integrated Circuits (ICs) - Linear - Amplifiers - Audio Amplifiers Part Status: Obsolete FET Type: MOSFET N-Channel, Metal Oxide Technology: Schottky Drain to Source Voltage (Vdss): 50 V Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds
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Supplier: Visual Sound, Inc.
Description: Crest Audio, Inc. Application: The CD Series amplifier is the next generation family of elevated efficiency amplification from Crest Audio. The CD Series combines a linear power supply and a Class D output to deliver Crest power in a compact and cost-effective package. This
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Supplier: Nexperia B.V.
Description: AEC-Q101 qualified Applications Linear voltage regulators MOSFET drivers Low-side switches Power management Amplifiers
- IC(max): 1000 milliamps
- PD: 500 milliwatts
- Package Type: SOT89, Other
- Polarity: NPN
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Supplier: Renesas Electronics Corporation
Description: the ATX supply's 5VsubSB/sub output during sleep states (S3, S4/S5). In active states (during S0 and S1/S2), the ISL6506 uses an external N-Channel pass MOSFET to connect the outputs directly to the 3.3V input supplied by an ATX power supply, for minimal losses.brbr The ISL6506 powers
- IC Package Type: SOIC / SOP
- Regulator Category: Switching Regulator
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Supplier: ROHM Semiconductor USA, LLC
Description: BD3522EFV is an ultra low-dropout linear chipset regulator that operates from a very low input supply. It offers ideal performance in low input voltage to low output voltage applications. The input-to-output voltage difference is minimized by using a built-in N-Channel power
- IC Package Type: Other
- Input Voltage (VIN): 4.3 to 5.5 volts
- Operating Temperature: -10 to 100 C
- Output Current (IOUT): 4 amps
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Wolfspeed offers a new family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as solar and energy storage systems, EV charging, Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, high (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
Lowest conduction and switching losses in the industry, enabling smaller, lighter and highly efficient power conversion Wolfspeed’s 3rd Generation 650V MOSFET technology from Richardson RFPD is optimized for high performance power electronics applications (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
Packing even more into the power-SO8 footprint, the LFPAK56D fits 2 MOSFETs into one robust package without compromising on performance. Allowing customers to optimise their design and apply tighter tolerance in operation. Ideal for space constrained applications, such as portable power tools, and hand-held appliances. (read more)
Browse Power MOSFET Datasheets for Nexperia B.V. -
Microchip's SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules from Richardson RFPD feature phase leg topology ranking from 700 volts (V), 538A to 1200 volts (V), 394 amperes (A) to 754 A at a case temperature (Tc) of 80 degrees Celsius. Offering higher power density and a (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
initial concept, though prototyping and on into final production. With over 600 pages of useful guidance on common topics and issues that the design engineer is likely to encounter, the handbook provides insight into the sometimes confusing and complex behaviour of MOSFETs and Power GaN FETs (read more)
Browse Power MOSFET Datasheets for Nexperia B.V. -
The onsemi NTTFD1D8N02P1E is a high-performance, dual N-channel power MOSFET designed to deliver superior efficiency and compactness for a wide range of applications. Featuring a small footprint of just 3.3 mm x 3.3 mm, this MOSFET is ideal for space (read more)
Browse Power Supplies Datasheets for DigiKey -
Acopian Power Supplies manufactures custom linear power supplies to match your specifications. We have millions of power supply models, but if you can't find what you need in our standard stand alone models, we can fill your needs with one of our Power Systems. We can also easily modify power supplies to meet customer requirements. (read more)
Browse Linear Power Supplies Datasheets for Acopian Power Supplies -
Nexperia today announced that the ongoing expansion of its NextPower 80 V and 100 V MOSFET portfolio is continuing apace with the release of several new LFPAK devices in industry-standard 5x6 mm and 8x8 mm footprints. These (read more)
Browse Power MOSFET Datasheets for Nexperia B.V. -
Acopian Power Supplies models may be programmed through their voltage ranges by means of external resistance. Models with adjustable current limiting have a constant-voltage/constant-current crossover characteristic, and so may be used as current regulated power supplies (read more)
Browse Power Supplies Datasheets for Acopian Power Supplies -
• AC-DC • Linear, Switching, or Unregulated • Single, dual, triple, or wide adjust output • Shipped within 3 Days (linear & unregulated) or 9 Days (switching) • 5 Year Warranty Go to www.acopian.com .......... or go to www.find aPowerSupply.com (read more)
Browse DC Power Supplies Datasheets for Acopian Power Supplies
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Use of simulation to understand and predict switching losses in a two-stage power factor corrected AC-to-DC converter
As shown in Fig. 1 we are using a two-stage AC-to-DC converter to explore the usefulness of the piecewise linear power MOSFET model to predict switching losses.
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Page 27. Semiconductor parts with 020 in root number
Linear MOSFET Power Module .
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for a 120 kW Active Load
The development of the 500V APL501JN linear power MOSFET and its 1kV APL1001JN sibling was stimulated by the expressed desire of linear MOSFET customers to have greater usable power dissipation.
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Page 10. Semiconductor parts with 602 in root number
Linear MOSFET Power Module .
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12.23.09 -- Argonne Scientists To Control Attractive Force For Nanoelectromechanical Systems
Microsemi Launches Line Of Linear MOSFET Power Modules .
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New Self-Switching Converters
It is for this reason that a special Power MOSFET design, called Linear Power MOSFET , was put forward [10].
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A phase steered parametric array for sub-bottom profiling
Each individual stave is driven by a separate ultra- linear MOSFET power amplifier module rated at 1 kW and thus with the rated electrical-to-acousticefficiency of 80%,the drive system of 13 kW has a power rating virtually identical with the…
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Analysis of IGBT modules connected in series
The model used here is based on the linear power MOSFET model [121, with suitable modifications.
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UHF band high-efficiency linear power amplifier for mobile communication satellites
A linear MOSFET power amplifier with high efficiency and low intermodulation distortion is developed by using the harmonic control and gate bias optimising technique.
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The design,
construction and calibration of a carefully
controlled source for exposure of mammalian cells to extremely
low-frequency electromagnetic fields
A 25 W continuous RMS linear MOSFET power amplifier is used to drive the coils.