Products & Services
See also: Categories | Featured Products | Technical Articles | More Information-
Supplier: Utmel Electronic Limited
Description: MOSFET N-Ch PowerTrench Logic Level
- V(BR)DSS: 30 volts
- PD: 187,000 milliwatts
- TJ: -65 to 175 C
- Number of Transistors in the Chip: 1
-
Supplier: Utmel Electronic Limited
Description: Single P-Channel Logic Level Power MOSFET -30V, -25A, 72mΩ, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
- Features: MOSFET, Power MOSFET
- Polarity: P-Channel
-
Supplier: Allied Electronics, Inc.
Description: POWER MOSFET N-CHANNEL 100V ID=20A TO220 CASE LOGIC LEVEL HIGH SPEED SWITCH
-
-
Supplier: Utmel Electronic Limited
Description: Single N-Channel Logic Level Power MOSFET 20V 2.8A 85 mΩ, SOT-23 (TO-236) 3 LEAD, 3000-REEL
- Features: MOSFET, Power MOSFET
- Polarity: N-Channel
-
Supplier: Infineon Technologies AG
Description: Power MOSFET IPD025N06N | N-Channel Power MOSFET IPP041N12N3 G | N-Channel Power MOSFET IRFB4321 | N-Channel Power MOSFET IRFP2907 | N-Channel Power MOSFET IPD025N06N | N-Channel Power MOSFET IPP041N12N3 G |
- rDS(on): 0.0033 ohms
- TJ: 175 C
- VGS(off): 2 to 4 volts
- Features: MOSFET, Other, Power MOSFET
-
Supplier: Nexperia B.V.
Description: Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits High reliability Power SO8 package, qualified to 175°C Low parasitic
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
-
Supplier: Infineon Technologies AG
Description: TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module SN7002N | Small signal/small power MOSFET TDA22590 | Integrated Smart Power Stages TDA21520 | Integrated Smart Power Stages IRLTS2242 | P-Channel Power MOSFET IRLML6401 | P-Channel Power
- rDS(on): 0.0046 ohms
- TJ: 150 C
- VGS(off): -2.4 to -1.3 volts
- Features: MOSFET, Other, Power MOSFET
-
Supplier: Nexperia B.V.
Description: Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits High reliability Power SO8 package, qualified to 175°C Low parasitic
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
-
Supplier: Nexperia B.V.
Description: Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. Features and benefits Advanced TrenchMOS provides low RDSon and low
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
-
Supplier: Nexperia B.V.
Description: Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. Features and benefits Advanced TrenchMOS provides low RDSon and low
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
-
Supplier: Infineon Technologies AG
Description: Automotive MOSFET BSR92P | Small signal/small power MOSFET BSP317P | Small signal/small power MOSFET IRLML2244 | P-Channel Power MOSFET IPP65R190CFD7A | Automotive MOSFET BSR92P | Small signal/small power MOSFET BSP317P | Small
- rDS(on): 500 ohms
- TJ: -55 to 150 C
- VGS(off): 1.4 to 2.6 volts
- Features: MOSFET, Other, Power MOSFET
-
Supplier: Infineon Technologies AG
Description: N-Channel Power MOSFET IPT030N12N3 G | N-Channel Power MOSFET BAS3005B-02V | Schottky Diodes IPD320N20N3 G | N-Channel Power MOSFET IPT030N12N3 G | N-Channel Power MOSFET BAS3005B-02V | Schottky Diodes
- rDS(on): 6 ohms
- TJ: 150 C
- VGS(off): 0.8 to 1.8 volts
- Operating Mode: Enhancement
-
Supplier: Richardson RFPD
Description: The AAT4280 SmartSwitch is a P-channel MOSFET power switch designed for high-side load switching applications. The P-channel MOSFET device has a typical RDS(ON) of 80mW, allowing increased load switch power handling capacity. This device is available in three different
- rDS(on): 0.08 ohms
- Features: MOSFET, Other, Power MOSFET
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: MOSFETs Low Power Two-Input Logic Gate TinyLogic Product overview: FDPC8013S from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful
- gfs: 0.053 to 0.168 kS
- PD: 2 milliwatts
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
-
Supplier: Microchip Technology, Inc.
Description: The MCP1403/4/5 devices are a family of 4.5A,dual output buffers/MOSFET drivers. As MOSFET drivers, the MCP1403/4/5 can easily charge 2200 pF gate capacitance in under 28 nsec (max).The inputs are TTL/CMOS compatible and provide 300 mV of hysteresis between the high and low input
- Features: MOSFET
-
Supplier: VAST STOCK CO., LIMITED
Description: MOSFET 30V N-CH Logic Level PowerTrench MOSFET
- Features: MOSFET
-
Description: 150V, N-CH MOSFET, LOGIC LEVEL
- TJ: -55 to 150 C
- Features: MOSFET, Other
-
Supplier: New Jersey Semi-Conductor Products, Inc.
Description: 1A 120V AND 150V 1.900 OHM LOGIC LEVEL N-CHANNEL POWER MOSFETS
- Features: MOSFET
-
Supplier: ODG (Origin Data Global)
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
- V(BR)DSS: 25 volts
- IDSS: 40,000 milliamps
- PD: 30,000 milliwatts
- TJ: -55 to 150 C
-
Supplier: Broadcom Inc.
Description: The HSSR-7110 is a single channel hermetically sealed power MOSFET optocoupler in an 8-Pin DIP ceramic package with gold plated leads. Solder dipped leads and various lead form options are also available. See the datasheet for details. The device operates exactly like a solid-state
- Isolation Voltage: 1,500 volts
- Collector Emitter Breakdown Voltage: 5 volts
- Operating Temperature: -55 to 125 C
- Input: AC, DC
-
Supplier: Rochester Electronics
Description: OptiMOS 5 power MOSFETs logic level
- Features: MOSFET, Other, Power MOSFET
- Packing Method: Tape Reel
-
Supplier: DigiKey
Description: 150V, N-CH MOSFET, LOGIC LEVEL,
- Polarity: N-Channel
- Features: Other
-
Supplier: Allied Electronics, Inc.
Description: Features: FAP-III = Logic Level, High Avalanche Ruggedness FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V FAP-IIA = Reduced Turn Off Time FAP-IIIBH = High Speed Non Logic FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V FAP-G = Ultra Fast Switching Trench Gate Series = Ultra
-
Supplier: Allied Electronics, Inc.
Description: Features: FAP-III = Logic Level, High Avalanche Ruggedness FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V FAP-IIA = Reduced Turn Off Time FAP-IIIBH = High Speed Non Logic FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V FAP-G = Ultra Fast Switching Trench Gate Series = Ultra
-
Supplier: Allied Electronics, Inc.
Description: Features: FAP-III = Logic Level, High Avalanche Ruggedness FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V FAP-IIA = Reduced Turn Off Time FAP-IIIBH = High Speed Non Logic FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V FAP-G = Ultra Fast Switching Trench Gate Series = Ultra
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: Logic-Level Gate Drive Product overview: IRL520NLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers
- Features: MOSFET
-
Supplier: Win Source Electronics
Description: Win Source Part Number: 1353632-BSO615CGXUMA1 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 54 pct. MSL Level: 3 (168 Hours) Mfr: Infineon
- TJ: -55 to 150 C
- Features: MOSFET
- Polarity: P-Channel
- Package Type: SO-8, SOT3
-
Supplier: DigiKey
Description: DUAL N-CHANNEL LOGIC LEVEL POWER
- Features: Other
-
Supplier: Microchip Technology, Inc.
Description: configurations, the source voltage of the MOSFET approaches the supply voltage when switched on. To keep the MOSFET turned on, the MIC5018's output drives the MOSFET gate voltage higher than the supply voltage. In a typical high-side configuration, the driver is powered from the
- Features: MOSFET
-
Supplier: VAST STOCK CO., LIMITED
Description: Power Management IC Development Tools SRK1000A adaptive synchronous rectification controller for flyback converter demonstration board with logic level SR MOSFET
-
Supplier: Win Source Electronics
Description: of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.76V, 1.89V Current - Peak Output (Source, Sink): 1.2A, 5A High Side Voltage - Max (Bootstrap): 100 V Rise / Fall Time (Typ): 7ns, 3.5ns Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: 12-DSBGA Temperature
- Operating Temperature: -40 to 125 C
- IC Package Type: BGA, Other
- Gate Type: Buffer / Driver
- Logic Family: Transistor-Transistor Logic (TTL)
-
Supplier: Micropac Industries, Inc.
Description: The 53259 is a single channel power MOSFET optocoupler. Low on-resistance of the MOSFET outputs, combined with 1500 VDC isolation between input and output, makes this optocoupler ideal for many solid state relay applications. Operation is specified over the full military
- Input (Pick-up) Voltage Range: 1 to 1.9 volts
- Dropout Voltage: 0.6 volts
- Input Current Range: 0.12 amps
- Maximum Current: 0.24 amps
-
Supplier: Renesas Electronics Corporation
Description: The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate drivers are independently controlled and matched to 13ns.
- Features: Other
- Package Type: SOIC / SOP
-
Supplier: Data Device Corporation (DDC)
Description: PW-82336 Radiation Tolerant Smart Power 3-Phase Motor Drive (PWR) The PW-82336 is a 3-phase Motor Drive hybrid that utilizes a rad-tolerant MOSFET output stage with 100 VDC rating to deliver 5 A continuous current to the motor. Packaged in a small case with internal logic for
- Maximum Output Voltage: 100 volts
- Continuous Output Current: 5 amps
- Peak Output Current: 10 amps
- Operating Temperature: -55 to 125 C
Find Suppliers by Category Top
Featured Products Top
-
-Speed Switching: With its capability for high-speed switching, this MOSFET is suitable for high-frequency applications, including power management and logic level shifting. Logic Level Compatible: It can be driven by logic (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
The dual N-Channel MOSFET array by Advanced Linear Devices is precision factory-matched using ALD's EPAD® CMOS technology. These dual monolithic devices feature a Zero-Threshold™ voltage, which enables circuit designs with input/output signals (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Wolfspeed offers a family of 1200 V silicon carbide MOSFETs and Schottky diodes that are optimized for use in high power applications such as UPS, motor control and drives, switched-mode power supplies, solar and energy storage systems, electric vehicle charging, high (read more)
Browse Diodes Datasheets for DigiKey -
Lowest conduction and switching losses in the industry, enabling smaller, lighter and highly efficient power conversion Wolfspeed’s 3rd Generation 650V MOSFET technology from Richardson RFPD is optimized for high performance power electronics applications (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
Nexperia, the essential semiconductor expert, announced a broadening of package options for its NextPower 80/100 V MOSFETs portfolio, previously only available in LFPAK56E, to now also include LFPAK56 and LFPAK88 packaging. These devices have been designed to combine high efficiency with (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
impact on spiking and, in turn, the amount of electromagnetic interference (EMI) generated during device switching. By focusing on this parameter, Nexperia has considerably reduced the level of spiking produced by its NextPower 80/100 V MOSFETs and hence also lowered the amount of EMI they produce. This (read more)
Browse Power MOSFET Datasheets for Nexperia B.V. -
matching and minimal power dissipation in analog and digital circuits. It reduces or eliminates voltage level shift while improving signal range in ultra-low power applications. Powered by ALD's exclusive EPAD® technology. (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
engineers to seamlessly migrate between MOSFET packaging, making it easy to adopt Nexperia MLPAK devices. In addition, they deliver rugged performance, excellent switching capability (low spiking and ringing) and high-power density. The high avalanche rating of these MOSFETs reduces the need to use (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
SOUTH BURLINGTON, VT (February 12, 2025) - OnLogic (www.onlogic.com), a leading provider of edge computing solutions, has launched the (read more)
Browse Network Servers Datasheets for OnLogic Inc. -
efficiency challenges as systems become smaller, denser and more power hungry,” says Gaetano Pignataro, Head of SiC & IGBT Product Group at Nexperia. “At Nexperia, we are focused on developing solutions that address these real system-level challenges. Our 1200 V SiC MOSFETs in QDPAK (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V.
Conduct Research Top
-
Universal Power MOSFET Interface IC (TC4420/9)
current, and logic inputs that can withstand up to 5V negative swings. Although designed as a power MOSFET driver, it can act as a level shifter, comparator, waveshaper and pulse transformer driver, to mention a few of its possible uses.
More Information Top
Indicates content that may require registration and/or purchase.
-
Page 2. Semiconductor parts with 761 in root number
7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET .
-
Datasheet for HUF76609D3, 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET. HUF76609D3 .pdf : 1.000.000 datasheets for Electronic Components ...
20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs .
-
Datasheet for HUF76121D3, 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs. HUF76121D3 .pdf : 1.000.000 datasheets for Electronic Components ...
20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs .
-
Logic level VGS ratings for NXP power MOSFETs
Explanation of the link between the absolute maximum rating of gate–source voltage (VGS) for a logic level power MOSFET , the design maximum gate source voltage rating and the long-term reliability of the product.
-
Page 2. Semiconductor parts with 970 in root number
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (14-LEAD FLAT PACK .
-
NTTFS5820NL: Power MOSFET 60V 37A 11.5 mOhm Single N-Channel u8FL Logic Level
Single N-Channel Logic Level Power MOSFET 60 V, 29 A, 11.5 mOhm u8FL .
-
MLP2N06CLG: 62 V, 2.0 A Power MOSFET, Logic Level
This logic level power MOSFET features current limiting for short circuit protection, integrated Gate-Source clamping for ESD protection and integral Gate-Drain clamping for over-voltage protection and SENSEFET® technology for low on-resistance.
-
MLP2N06CL: 62 V, 2.0 A Power MOSFET, Logic Level
This logic level power MOSFET features current limiting for short circuit protection, integrated Gate-Source clamping for ESD protection and integral Gate-Drain clamping for over-voltage protection and SENSEFET® technology for low on-resistance.
-
Page 2. Semiconductor parts with 770 in root number
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (14-LEAD FLAT PACK .
-
Page 1. Semiconductor parts with 797 in root number
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (14-LEAD FLAT PACK .