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Supplier: Utmel Electronic Limited
Description: MOSFET N-Ch PowerTrench Logic Level
- Transistor Type: MOSFET
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Supplier: Utmel Electronic Limited
Description: Single P-Channel Logic Level Power MOSFET -30V, -25A, 72mO, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
- Polarity: P-Channel
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Richardson RFPD
Description: N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6O
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Utmel Electronic Limited
Description: Single N-Channel Logic Level Power MOSFET 20V 2.8A 85 mO, SOT-23 (TO-236) 3 LEAD, 3000-REEL
- Polarity: N-Channel
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Utmel Electronic Limited
Description: Automotive Power MOSFET, 60V, 500mA, 5 Ohm, Single N-Channel, SOT-23, Logic Level. Automotive version of the MMBF170L., SOT-23 (TO-236) 3 LEAD, 3000-REEL
- Polarity: N-Channel
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Infineon Technologies AG
Description: 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Benefits RoHS Compliant Low RDS(on) Industry-leading quality Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated 175°C Operating Temperature Logic Level
- Package Type: TO-263, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
- TJ: 175 C
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Supplier: Infineon Technologies AG
Description: -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package Applications Adapters and chargers Convenient, smart, and secure wearables supporting your health and well-being. Edge computing Benefits Optimized for broadest
- Package Type: SO-8, Other
- Packing Method: Tape Reel, Shipping Tube / Stick Magazine, Other
- Polarity: P-Channel, Other
- TJ: 150 C
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Supplier: Infineon Technologies AG
Description: battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level
- Package Type: TO-220, Other
- Packing Method: Shipping Tube / Stick Magazine, Other
- Polarity: N-Channel, Other
- TJ: 175 C
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Supplier: Infineon Technologies AG
Description: Logic level : Optimized for 10 V gate-drive voltage (called normal level), and capable of being driven at 4.5 V gate-drive voltage Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being
- Package Type: TO-263, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
- TJ: 175 C
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET N-Ch PowerTrench Logic Level
- Transistor Type: MOSFET
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Supplier: Nexperia B.V.
Description: General purpose MOSFET for standard applications, 50 A, logic level N-channel enhancement mode Power MOSFET in MLPAK33 package. Features and benefits Logic level compatibility Trench MOSFET technology Thermally efficient package in a small form
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Nexperia B.V.
Description: General purpose MOSFET for standard applications, 56 A, logic level N-channel enhancement mode Power MOSFET in MLPAK33 package. Features and benefits Logic level compatibility Trench MOSFET technology Thermally efficient package in a small form
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Nexperia B.V.
Description: General purpose MOSFET for standard applications, 46 A, logic level, N-channel enhancement mode Power MOSFET in MLPAK33 package. Features and benefits Logic level compatibility Trench MOSFET technology Thermally efficient package in a small
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Nexperia B.V.
Description: General purpose MOSFET for standard applications, 39 A, logic level, N-channel enhancement mode Power MOSFET in MLPAK33 package. Features and benefits Logic level compatibility Trench MOSFET technology Thermally efficient package in a small
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET 30V N-Ch LogicLevel PowerTrench MOSFET
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET Dual N-Ch LogicLevel PowerTrench MOSFET
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET 30V N-CH Logic Level PowerTrench MOSFET
- Transistor Type: MOSFET
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Supplier: Rochester Electronics
Description: OptiMOS 5 power MOSFETs logic level
- Package Type: Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: N-CHANNEL LOGIC LEVEL POWER FIELD - EFFECT TRANSISTORS
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: The MCP1403/4/5 devices are a family of 4.5A,dual output buffers/MOSFET drivers. As MOSFET drivers, the MCP1403/4/5 can easily charge 2200 pF gate capacitance in under 28 nsec (max).The inputs are TTL/CMOS compatible and provide 300 mV of hysteresis between the high and low input
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: The MCP1403/4/5 devices are a family of 4.5A,dual output buffers/MOSFET drivers. As MOSFET drivers, the MCP1403/4/5 can easily charge 2200 pF gate capacitance in under 28 nsec (max).The inputs are TTL/CMOS compatible and provide 300 mV of hysteresis between the high and low input
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Supplier: DigiKey
Description: DUAL N-CHANNEL LOGIC LEVEL POWER
- Package Type: Other
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Supplier: Win Source Electronics
Description: Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.76V, 1.89V Current - Peak Output (Source, Sink): 1.2A, 5A High Side Voltage - Max (Bootstrap): 100 V Rise / Fall Time (Typ): 7ns, 3.5ns Voltage - Supply: 4.5V
- Gate Type: Buffer / Driver
- Logic Family: Transistor-Transistor Logic (TTL)
- Operating Temperature: -40 to 125 C
- Package Type: BGA, Other
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Supplier: Win Source Electronics
Description: : Logic Level Gate, 5V Drive Current - Continuous Drain (Id) @ 25°C: 45A Power - Max: 2.8W Family Name: CSD87355Q5DT Categories: Discrete Semiconductor Products Manufacturer Package: 8-LSON (5x6) Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 1.9V @ 250µA
- Package Type: SOT3
- Packing Method: Tape Reel, Other
- Polarity: N-Channel
- QG: 13.7 nC
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1339368-AUIRF7342Q Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays Series: HEXFET® Package: Tube Standard Package: 95 Technology: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to
- Package Type: SOT3
- Polarity: P-Channel
- TJ: -55 to 150 C
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Supplier: Broadcom Inc.
Description: The 5962-93140 is a high reliability DSCC SMD Class H single channel hermetically sealed power MOSFET optocoupler in an 8-Pin DIP ceramic package with gold plated leads. Solder dipped leads and various lead form options are also available. See the datasheet for details. The devices
- Collector Emitter Breakdown Voltage: 5 volts
- Isolation Voltage: 1500 volts
- Mounting Option: Through Hole (Plug-in)
- Operating Temperature: -55 to 125 C
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Supplier: Renesas Electronics Corporation
Description: The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate drivers are independently controlled and matched to 13ns.
- IC Package Type: SOIC / SOP, Other
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Supplier: Micropac Industries, Inc.
Description: input current of 5 to 15 mA, which can be supplied from standard logic types such as opencollector TTL. Output is provided by a power MOSFET exhibiting very low RDS(ON) and capable of carrying a continuous current of 10 amperes. The basic data sheet part is environmentally
- Application Type: General Application Relay
- Dropout Voltage: 1 volts
- Features: TTL Compatible
- Input (Pick-up) Voltage Range: 2.45 to 4.5 volts
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Supplier: Win Source Electronics
Description: Win Source Part Number: 960555-EFC4C002NLTDG Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Package: Bulk Standard Package: 1 Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate
- Output Power: 2.6 watts
- Package Type: SOT3
- Polarity: N-Channel
- TJ: 150 C
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Supplier: Littelfuse, Inc.
Description: dV/dt immunity and faster turn-off. Desaturation detection circuitry detects an over current condition of the SiC MOSFET and initiates a soft turn off, thus preventing a potentially damaging dV/dt event. The logic input is TTL and CMOS compatible; this input does not need to be
- Transistor Type: IGBT
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-Speed Switching: With its capability for high-speed switching, this MOSFET is suitable for high-frequency applications, including power management and logic level shifting. Logic Level Compatible: It can be driven by logic (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
The dual N-Channel MOSFET array by Advanced Linear Devices is precision factory-matched using ALD's EPAD® CMOS technology. These dual monolithic devices feature a Zero-Threshold™ voltage, which enables circuit designs with input/output signals (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Wolfspeed offers a family of 1200 V silicon carbide MOSFETs and Schottky diodes that are optimized for use in high power applications such as UPS, motor control and drives, switched-mode power supplies, solar and energy storage systems, electric vehicle charging, high (read more)
Browse Diodes Datasheets for DigiKey -
Lowest conduction and switching losses in the industry, enabling smaller, lighter and highly efficient power conversion Wolfspeed’s 3rd Generation 650V MOSFET technology from Richardson RFPD is optimized for high performance power electronics applications (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
Nexperia, the essential semiconductor expert, announced a broadening of package options for its NextPower 80/100 V MOSFETs portfolio, previously only available in LFPAK56E, to now also include LFPAK56 and LFPAK88 packaging. These devices have been designed to combine high efficiency with (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
impact on spiking and, in turn, the amount of electromagnetic interference (EMI) generated during device switching. By focusing on this parameter, Nexperia has considerably reduced the level of spiking produced by its NextPower 80/100 V MOSFETs and hence also lowered the amount of EMI they produce. This (read more)
Browse Power MOSFET Datasheets for Nexperia B.V. -
matching and minimal power dissipation in analog and digital circuits. It reduces or eliminates voltage level shift while improving signal range in ultra-low power applications. Powered by ALD's exclusive EPAD® technology. (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
engineers to seamlessly migrate between MOSFET packaging, making it easy to adopt Nexperia MLPAK devices. In addition, they deliver rugged performance, excellent switching capability (low spiking and ringing) and high-power density. The high avalanche rating of these MOSFETs reduces the need to use (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
SOUTH BURLINGTON, VT (February 12, 2025) - OnLogic (www.onlogic.com), a leading provider of edge computing solutions, has launched the (read more)
Browse Network Servers Datasheets for OnLogic Inc. -
efficiency challenges as systems become smaller, denser and more power hungry,” says Gaetano Pignataro, Head of SiC & IGBT Product Group at Nexperia. “At Nexperia, we are focused on developing solutions that address these real system-level challenges. Our 1200 V SiC MOSFETs in QDPAK (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V.
Conduct Research Top
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Universal Power MOSFET Interface IC (TC4420/9)
current, and logic inputs that can withstand up to 5V negative swings. Although designed as a power MOSFET driver, it can act as a level shifter, comparator, waveshaper and pulse transformer driver, to mention a few of its possible uses.
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Page 2. Semiconductor parts with 761 in root number
7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET .
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Datasheet for HUF76609D3, 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET. HUF76609D3 .pdf : 1.000.000 datasheets for Electronic Components ...
20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs .
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Datasheet for HUF76121D3, 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs. HUF76121D3 .pdf : 1.000.000 datasheets for Electronic Components ...
20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs .
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Logic level VGS ratings for NXP power MOSFETs
Explanation of the link between the absolute maximum rating of gate–source voltage (VGS) for a logic level power MOSFET , the design maximum gate source voltage rating and the long-term reliability of the product.
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Page 2. Semiconductor parts with 970 in root number
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (14-LEAD FLAT PACK .
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NTTFS5820NL: Power MOSFET 60V 37A 11.5 mOhm Single N-Channel u8FL Logic Level
Single N-Channel Logic Level Power MOSFET 60 V, 29 A, 11.5 mOhm u8FL .
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MLP2N06CLG: 62 V, 2.0 A Power MOSFET, Logic Level
This logic level power MOSFET features current limiting for short circuit protection, integrated Gate-Source clamping for ESD protection and integral Gate-Drain clamping for over-voltage protection and SENSEFET® technology for low on-resistance.
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MLP2N06CL: 62 V, 2.0 A Power MOSFET, Logic Level
This logic level power MOSFET features current limiting for short circuit protection, integrated Gate-Source clamping for ESD protection and integral Gate-Drain clamping for over-voltage protection and SENSEFET® technology for low on-resistance.
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Page 2. Semiconductor parts with 770 in root number
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (14-LEAD FLAT PACK .
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Page 1. Semiconductor parts with 797 in root number
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (14-LEAD FLAT PACK .
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