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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Low-Power. Search-friendly keywords include diode, rectifier, Schottky, switching diode, Low-Power, Diode and Rectifier,
- Features: Rectifier Diode
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Supplier: SemiGen
Description: which allows for optimum performance. Low conversation loss and superior TSS make these diodes ideal for detector / mixer applications with frequency ranges from S band to Ka band as well as modulators, lower power limiters and high speed switches. Features:
- VF: 0.28 volts
- Applications: Detector, Mixer, Switching
- Features: Modulation, Other, Schottky Barrier Diodes
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Supplier: Lumina Power, Inc.
Description: The LDD series is a new family of OEM laser diode drivers designed for the emerging high power laser diode industry. The LDD series is ideal for high power applications where economy is important and performance cannot be compromised. Compact size is possible due to the
- DC Output Current: 15 amps
- DC Output Power: 50 watts
- AC Input Voltage: 100 to 240 volts
- Type: DC Power Supply, High Voltage Power Supply, Laser Power Supply
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Supplier: Qorvo
Description: Qorvo's RFSA2033 is a fully monolithic analog voltage controlled attenuator (VCA) featuring exceptional linearity over a typical temperature-compensated 25dB gain control range and low insertion loss of 1dB typical. It incorporates a revolutionary new circuit architecture to solve a
- Frequency Range: 0.05 to 6 GHz
- Attenuation: 25 dB
- Insertion Loss: 1 dB
- Features: Other
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Supplier: Infineon Technologies AG
Description: non-rupture current Soft turn-off behavior at high turn-off di/dt Benefits Freewheeling or clamping diode for IGCT / Presspack IGBT Low inductive connection to IGCT / Presspack IGBT possible Extreme soft switching behavior at low on-state losses Potential Applications
- VRRM: 6,500 volts
- IFSM: 22,000 amps
- Features: Other, Power Diode
- RoHS Compliant: RoHS Compliant
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Supplier: Nexperia B.V.
Description: damage caused by ESD and other transients. Features and benefits Bidirectional ESD protection of one line Extremely low Harmonic Distortion, very reproducible due to monolithic construction Extremely low diode capacitance, Cd = 0.108 pF at 1 MHz typical Extremely low
- VR: 7.1 volts
- Features: Other, Power Diode, Protector
- RoHS Compliant: RoHS Compliant
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Supplier: Infineon Technologies AG
Description: Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The
- VF: 1.6 volts
- IF: 75,000 mA
- IR: 0.027 mA
- IFSM: 150 amps
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Supplier: Infineon Technologies AG
Description: Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The
- VF: 1.17 volts
- IF: 200,000 mA
- IR: 0.0024 mA
- IFSM: 400 amps
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Supplier: Infineon Technologies AG
Description: Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The
- VF: 1.6 volts
- IF: 100,000 mA
- IR: 0.027 mA
- IFSM: 200 amps
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Supplier: ROHM Semiconductor USA, LLC
Description: RB218BM200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle systems
- VF: 0.88 volts
- IF: 10,000 mA
- VR: 200 volts
- IR: 0.01 mA
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Supplier: ROHM Semiconductor USA, LLC
Description: RB218BM200FH is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle
- VF: 0.88 volts
- IF: 10,000 mA
- VR: 200 volts
- IR: 0.01 mA
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Supplier: Toshiba America, Inc.
Description: SiC SBDs are ideal for low-loss, high-efficiency power conversion applications such as server power supplies and solar power conditioners. SiC Schottky Barrier Diodes Schottky Barrier Diodes TVS Diodes (ESD Protection Diodes) Rectifier
- Features: Protector, RF Diodes, Rectifier Diode, Transient Voltage Suppressor Diodes (TVS), Zener Diodes
- Diode Type: Schottky Barrier Diodes
- Configuration: Single
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Supplier: Richardson RFPD
Description: With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical. Its advantages also include the low
- Diode Type: PIN Diodes
- Features: RF Diodes
- Configuration: Single
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Supplier: ROHM Semiconductor GmbH
Description: RB088BM200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle systems
- VF: 0.88 volts
- IF: 5,000 mA
- VR: 200 volts
- VRRM: 200 volts
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Supplier: ROHM Semiconductor GmbH
Description: RB218BM200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle systems
- VF: 0.88 volts
- IF: 10,000 mA
- VR: 200 volts
- VRRM: 200 volts
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Supplier: Elite Semiconductor Products, Inc.
Description: Features: 20 Amps Total Guard-Ring for Stress Protection Low Forward Voltage Guaranteed Reverse Avalanche Low Power Loss/High Efficiency High Surge Capacity Low Stored Charge Majority Carrier Conduction
- VF: 0.75 to 0.95 volts
- IF: 10,000 to 20,000 mA
- VR: 90 volts
- IR: 0.1 to 6 mA
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Supplier: ROHM Semiconductor GmbH
Description: RB088NS200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle systems
- VF: 0.88 volts
- IF: 5,000 mA
- VR: 200 volts
- VRRM: 200 volts
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Supplier: Nexperia B.V.
Description: Planar Schottky barrier double diode encapsulated in a SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Features and benefits Low switching losses Capability of absorbing very high surge current Fast recovery time Guard ring protected Plastic SMD package Applications
- IF: 1,000 mA
- VR: 60 volts
- IR: 0.35 mA
- Features: Other, Power Diode, Protector, Rectifier Diode, Schottky Barrier Diodes, Switching
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Supplier: ROHM Semiconductor GmbH
Description: RB218BM200FH is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle
- VF: 0.88 volts
- IF: 10,000 mA
- VR: 200 volts
- VRRM: 200 volts
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Supplier: Littelfuse, Inc.
Description: The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without
- VCES: 1,000 volts
- VCE(on): 3 volts
- IC(max): 16 amps
- Features: IGBT, Other
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Supplier: Littelfuse, Inc.
Description: The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without
- VCES: 1,000 volts
- VCE(on): 3.5 volts
- IC(max): 24 amps
- Features: IGBT, Other
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Supplier: Littelfuse, Inc.
Description: The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without
- VCES: 1,000 volts
- VCE(on): 3.5 volts
- IC(max): 24 amps
- Features: IGBT, Other
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Supplier: Littelfuse, Inc.
Description: The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without
- VCES: 1,000 volts
- VCE(on): 2.7 volts
- IC(max): 16 amps
- Features: IGBT, Other
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Supplier: APITech
Description: MIL PRF 38534 screening is available. Ceramic and metal construction provides low junction temperatures. Use of bipolar transistors to achieve low phase noise and high output power. Integrate unique low pass filtering for superior harmonic performance.
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Supplier: ROHM Semiconductor USA, LLC
Description: ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.
- VF: 1 volts
- IF: 500 mA
- VR: 200 volts
- Tj: -55 to 150 C
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Supplier: Richardson RFPD
Description: Buck Chopper Trench + Field Stop IGBT4 Power Module - Low voltage drop, Low leakage current, Low switching losses, Soft recovery parallel diodes, Low diode VF, RBSOA and SCSOA rated.
- Features: IGBT, Other
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Supplier: Skyworks Solutions, Inc.
Description: technology resulting in PIN diodes with tightly controlled I-region characteristics. The low capacitance and low resistance of the APD0505 through APD1520 diodes are ideal for switch applications that require insertion loss and fast switching speed. For switch or
- Features: PIN Diodes
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Supplier: Frontier Electronics Corp.
Description: Frontier's series of Trench MOS Schottky diodes are a very robust mechanical design with low forward voltage (VF) ratings. Optimized for high efficiency and low power loss, they are ideally suited for use in switching power supplies and reverse battery
- VF: 0.45 to 1.15 volts
- IF: 5,000 to 30,000 mA
- VR: 45 to 300 volts
- IR: 0.01 to 50 mA
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Supplier: Skyworks Solutions, Inc.
Description: The SKY12212-478LF is a high power handling, Single-Pole, Double-Throw (SPDT) silicon PIN diode switch. The device operates over the 50 MHz to 2.7 GHz band. It features low insertion loss, excellent power handling, and superb linearity with low DC
- Frequency Range: 50 to 2,700 MHz
- Isolation (Port to Port): 29 to 50 dB
- Features: Other
- Type: SPDT
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Supplier: Microchip Technology, Inc.
Description: high-power application requirements, ranging from fast recovery for continuous conduction mode power factor correction to low conduction loss for output rectification. FRED-200V is a family of 200V Ultrafast Soft Recovery Rectifier Diode available in a variety of
- Features: Other, Rectifier Diode
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Supplier: Skyworks Solutions, Inc.
Description: The SKY12207-306LF is a high power handling, Single-Pole, Double-Throw (SPDT) silicon PIN diode switch. The device operates over the 900 MHz to 4 GHz band. It features low insertion loss, excellent power handling, and superb linearity with low DC
- Frequency Range: 900 to 4,000 MHz
- Isolation (Port to Port): 28 to 41 dB
- Features: Other
- Type: SPDT
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Supplier: Allied Electronics, Inc.
Description: significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. Features: Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at
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Supplier: Skyworks Solutions, Inc.
Description: 0.05 to 2.7 GHz, by changing the value of an RF choke in the SMT bias network. The SKY12208-306LF features low insertion loss, excellent power handling, and superb linearity with low DC power consumption. The device is well-suited for use as a high power
- Frequency Range: 20 to 2,700 MHz
- Isolation (Port to Port): 33 to 45 dB
- Features: Other
- Type: SPDT
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Supplier: Allied Electronics, Inc.
Description: significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. Features: Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at
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Supplier: Allied Electronics, Inc.
Description: switching element and snubbers. The device is also intended for use as a freewheeling diode in power supplies and other power switching applications. Benchmark Ultralow Forward Voltage Drop Hyperfast Recovery Time Low Leakage Current 175°C Operating Junction Temperature
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Supports DC to 50 GHz broadband applications Low Loss & High Isolation (read more)
Browse RF Switches Datasheets for Win Source Electronics -
. Another type of diode is the Schottky diode, constructed from a metal-to-metal semiconductor contact and featuring a lower forward voltage drop than that of traditional P-N junction diodes. They can be used as a low-loss rectifier, but the reverse leakage current of these (read more)
Browse Diodes Datasheets for ASAP Semiconductor LLC -
Industry's lowest DCR and ultra low AC losses over a wide frequency range Superior current handling with soft saturation characteristics AEC-Q200 Grade 1 (−40°C to +125°C) Wide inductance range up to 8.2 µH RoHS-compliant, halogen free. 260°C compatible. Tin-silver (96.5/3.5) over copper terminations COTS Plus tin-silver-copper and tin-lead terminations available (read more)
Browse Chip Inductors Datasheets for Coilcraft, Inc. -
High-frequency power electronics demand capacitors that combine efficiency, stability, and reliability. Engineers need components that maintain low loss, minimal temperature (read more)
Browse Film Capacitors Datasheets for Shenzhen Weidy Industrial Development Co., Ltd. -
Power Loss Protection Power Management Unit with Integrated High-Current Buck Converters, Buck-Boost Converter and Low Dropout Regulator (LDO) The ACT85411 is a highly integrated, highly configurable multiple output power management IC (PMIC) with built-in power loss protection (PLP (read more)
Browse Supervisory Circuits and Battery Monitor Chips Datasheets for Qorvo -
built-in power loss protection (PLP). Four high-efficiency Buck regulators can supply 3 x 4 A and 1 x 2 A output current. The output voltage can go as low as 0.6 V. In addition, there is a 12 V boost converter plus powers the internal gate drivers for maximum efficiency. The power loss (read more)
Browse Supervisory Circuits and Battery Monitor Chips Datasheets for Qorvo -
Redundant Power should be considered for any equipment where the highest attainable reliability is essential, and an unexpected loss of power would be disastrous. Such applications include communications systems (both voice and data types), computer systems (volatile memory systems in particular (read more)
Browse Programmable Power Supplies Datasheets for Acopian Power Supplies -
/N AE5500SSH6558 Our P/N AE5500SSH6558 has a Cut Off Frequency of 5.5GHz and a Pass Band Frequency of 5.5?23GHz. The Pass Band Insertion Loss is ≤2.0dB @ 5.5?5.8GHz ≤1.0dB @ 5.8?23GHz. Follow us on: (read more)
Browse RF Filters and Microwave Filters Datasheets for Anatech Electronics, Inc. -
Coilcraft, Inc.
Coilcraft Introduces XEL50xx ultra low-loss power inductors for high-frequency applications
Coilcraft introduces its new XEL50xx family of high-performance, molded power inductors that offer exceptionally low DC resistance and ultra-low AC losses, greatly improving power converter efficiency at high frequencies (2 to 5 MHz) and high ripple current. The use of high switching (read more)
Browse Inductors, Coils, and Chokes Datasheets for Coilcraft, Inc. -
100A design using a 0.5mΩ shunt resistor can waste up to 5 watts of power as pure heat, requiring costly and space-consuming heatsinks. The ACS37200’s ultra-low 50 µΩ resistance reduces that power loss to just 0.5 watts—a 90% reduction. This means less energy is wasted (read more)
Browse Current Sensors Datasheets for Allegro MicroSystems Inc.
Conduct Research Top
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AN3010: An Examination of Recovery Time of an Integrated Limiter/LNA
noise figure, a high power and low loss limiter is required. The purpose of this application note is to document the test methodology employed and test results achieved measuring the small-signal gain recovery time of a balanced LNA with an integrated Schottky diode limiter and high power load
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DC Motors: Principle of Operation
to the amount of interacting electromagnetic field force required to achieve the opposing work load. In addition to the force and motion needed by the device one must consider any efficiency loss in the conversion of electrical power into mechanical work (watts). Stepper Motor Overview. What is a Stepper
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Semiconductor Power Devices
Hall RN, “Power rectifiers and transistors”, Proc IRE 40, 1512–1518 (1952) [Hua94] Huang Q: “MOS-Controlled Diode - A New Class of Fast Switching Low Loss Power Diode ” VPEC, pp. 97–105 (1994) [Hua95] Huang Q, Amaratunga GAJ: “MOS Controlled Diodes - A new…
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Dielectrically isolated lateral merged PiN Schottky (LMPS) diodes
Power integrated circuits for high-voltage, high-frequency applications require fast switching, low loss power diodes that can be integrated with power switches such as LDMOSFET’s and LIGBT’s.
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VIA-7 amorphous silicon FET with Schottky contacts
The low loss power diode (LLD) .
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VIA-6 novel low-loss and high speed diode utilizing an "IDEAL" ohmic contact
The low loss power diode (LLD) .
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Integral diodes in lateral DI power devices
Power integrated circuits for applications such as inverters for motor speed control require high speed, low loss power diodes which can be integrated with power switches such as LDMOSFETs and LIGBTs [11.
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Experimental demonstration of the MOS controlled diode (MCD)
[6] Qin Huang and Gehan Amaratunga, “MOScontrolled diodes-a new class of fast switching, low loss power diodes ,” Solid-state Electronics, Vo1.38, .
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An analysis and experimental approach to MOS controlled diodes behavior
[6] Q. Huang and G. Amaratunga, “MOS controlled diodes—A new class of fast switching, low loss power diodes ,” Solid-State Electron., vol.
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Microturbine Power Conversion Technology Review
Schottky diodes are low power low loss diodes while the pn diodes have higher losses but they can be used in a wider power range.
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Instruments, Measurement, Electronics and Information Engineering
12-19 kV 4H-SiC pin diodes with low power loss [c].
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高耐圧 SiC FET 及びダイオードの
(6) Y. Sugawara, D. Takayama, K. Asano, R. Singh, J. Palmour, and T. Hayashi, “12-19kV 4H-SiC pin Diode with Low Power Loss ”, Proceedings of ISPSD’01, pp.27-30 (2001).