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Supplier: Toshiba America, Inc.
Description: (Si) SBDs. SiC SBDs are ideal for low-loss, high-efficiency power conversion applications such as server power supplies and solar power conditioners. SiC Schottky Barrier Diodes Schottky Barrier Diodes TVS Diodes (ESD Protection Diodes)
- Diode Applications: Rectifier Diode, Protector
- Diode Type: Zener Diodes, Schottky Barrier Diodes, RF Diodes, Transient Voltage Suppressor Diodes (TVS)
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Supplier: Empower RF Systems
Description: Low insertion loss & leakage power circuit protection, high power handling
- Diode Applications: Limiter, Power Diode
- Diode Type: PIN Diodes, RF Diodes
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Supplier: SemiGen
Description: capacitance which allows for optimum performance. Low conversation loss and superior TSS make these diodes ideal for detector / mixer applications with frequency ranges from S band to Ka band as well as modulators, lower power limiters and high speed switches. Features:
- Diode Applications: Switching, Modulation, Detector, Mixer
- Diode Type: Schottky Barrier Diodes
- VF: 0.2800 volts
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Supplier: Nexperia B.V.
Description: insertion loss: -0.28 dB at 10 GHz Extremely low return loss: -19 dB at 10 GHz 20 Gbps capable Ultra-small SMD package Applications Antenna protection up to 27 dBm input power Cellular handsets and accessories Portable electronics Communication systems Computers and
- Diode Applications: Protector, Power Diode
- RoHS Compliant: Yes
- VR: 7.1 volts
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Supplier: Nexperia B.V.
Description: Extremely low clamping, extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless, ultra-small Surface-Mounted Device (SMD) package designed to protect one
- Diode Applications: Protector, Power Diode
- RoHS Compliant: Yes
- VR: 7.1 volts
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Supplier: Infineon Technologies AG
Description: High surge current capability High case non-rupture current Soft turn-off behavior at high turn-off di/dt Benefits Freewheeling or clamping diode for IGCT / Presspack IGBT Low inductive connection to IGCT / Presspack IGBT possible Extreme soft switching behavior at low on-state
- Diode Applications: Power Diode
- RoHS Compliant: Yes
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Supplier: Infineon Technologies AG
Description: Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft
- Diode Applications: Power Diode
- IF: 150000 mA
- IR: 0.2500 mA
- RoHS Compliant: Yes
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Supplier: Infineon Technologies AG
Description: Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft
- Diode Applications: Power Diode
- IF: 100000 mA
- IR: 0.0270 mA
- RoHS Compliant: Yes
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Supplier: Infineon Technologies AG
Description: Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft
- Diode Applications: Power Diode
- IF: 50000 mA
- IR: 0.0270 mA
- RoHS Compliant: Yes
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Supplier: Qorvo
Description: Qorvo's RFSA2033 is a fully monolithic analog voltage controlled attenuator (VCA) featuring exceptional linearity over a typical temperature-compensa ted 25dB gain control range and low insertion loss of 1dB typical. It incorporates a revolutionary new circuit architecture to solve a
- Attenuation: 25 dB
- Frequency Range: 0.0500 to 6 GHz
- Insertion Loss: 1 dB
- Package Type: Other
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Supplier: Richardson RFPD
Description: With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical. Its advantages also include the low
- Diode Type: PIN Diodes, RF Diodes
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Supplier: ROHM Semiconductor USA, LLC
Description: RB218BM200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle
- Diode Type: Schottky Barrier Diodes
- IF: 10000 mA
- IR: 0.0100 mA
- RoHS Compliant: Yes
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Supplier: ROHM Semiconductor USA, LLC
Description: RB218NS200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle
- Diode Type: Schottky Barrier Diodes
- IF: 10000 mA
- IR: 0.0100 mA
- RoHS Compliant: Yes
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Supplier: ROHM Semiconductor USA, LLC
Description: RB088NS200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle
- Diode Type: Schottky Barrier Diodes
- IF: 5000 mA
- IR: 0.0070 mA
- RoHS Compliant: Yes
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Supplier: ROHM Semiconductor USA, LLC
Description: RB088BM200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle
- Diode Type: Schottky Barrier Diodes
- IF: 5000 mA
- IR: 0.0070 mA
- RoHS Compliant: Yes
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Supplier: Elite Semiconductor Products, Inc.
Description: Features: 20 Amps Total Guard-Ring for Stress Protection Low Forward Voltage Guaranteed Reverse Avalanche Low Power Loss/High Efficiency High Surge Capacity Low Stored Charge Majority Carrier Conduction
- Diode Applications: Rectifier Diode, Power Diode
- Diode Type: Schottky Barrier Diodes
- IF: 10000 to 20000 mA
- IR: 0.1000 to 6 mA
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Supplier: SemiGen
Description: capacitance which allows for optimum performance. Low conversation loss and superior TSS make these diodes ideal for detector / mixer applications with frequency ranges from S band to Ka band as well as modulators, lower power limiters and high speed switches. Features:
- Diode Applications: Switching, Modulation, Detector, Mixer
- Diode Type: Schottky Barrier Diodes
- VF: 305 volts
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Supplier: SemiGen
Description: capacitance which allows for optimum performance. Low conversation loss and superior TSS make these diodes ideal for detector / mixer applications with frequency ranges from S band to Ka band as well as modulators, lower power limiters and high speed switches. Features:
- Diode Applications: Switching, Modulation, Detector, Mixer
- Diode Type: Schottky Barrier Diodes
- VF: 300 volts
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Supplier: Lumina Power, Inc.
Description: The LDD series is a new family of OEM laser diode drivers designed for the emerging high power laser diode industry. The LDD series is ideal for high power applications where economy is important and performance cannot be compromised. Compact size is possible due to the
- AC Input Voltage: 200 to 240 volts
- DC Output Current: 200 amps
- DC Output Power: 3000 watts
- Form Factor: Wall Mount
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Supplier: ROHM Semiconductor GmbH
Description: RB218BM200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle
- Diode Type: Schottky Barrier Diodes
- IF: 10000 mA
- RoHS Compliant: Yes
- VF: 0.8800 volts
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Supplier: APITech
Description: API Technologies' Voltage Controlled Oscillators (VCOs) are rugged, high performance, customizable varactor diode-based designs. Key features include: Use of thermistors on all VCO designs for added temperature stability. Gold substrate film yields lower loss and enhances
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Supplier: Skyworks Solutions, Inc.
Description: -established silicon technology resulting in PIN diodes with tightly controlled I-region characteristics. The low capacitance and low resistance of the APD0505 through APD1520 diodes are ideal for switch applications that require insertion loss and fast switching
- Diode Type: PIN Diodes
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Supplier: Frontier Electronics Corp.
Description: Frontier's series of Trench MOS Schottky diodes are a very robust mechanical design with low forward voltage (VF) ratings. Optimized for high efficiency and low power loss, they are ideally suited for use in switching power supplies and reverse battery
- Diode Type: Schottky Barrier Diodes
- IF: 5000 to 30000 mA
- IR: 0.0100 to 50 mA
- RoHS Compliant: Yes
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Supplier: Microchip Technology, Inc.
Description: -voltage, high-power application requirements, ranging from fast recovery for continuous conduction mode power factor correction to low conduction loss for output rectification. FRED-200V is a family of 200V Ultrafast Soft Recovery Rectifier Diode available in a
- Diode Applications: Rectifier Diode
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Supplier: Littelfuse, Inc.
Description: Our comprehensive range of rectifier diodes offers class-leading performance and reliability. Devices are available with blocking voltages from 200V up to 7.2kV. Optimized to offer low conduction losses, these devices are ideally suited to line frequency applications up to 400Hz
- Diode Applications: Rectifier Diode
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Supplier: ROHM Semiconductor GmbH
Description: RB218NS200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle
- IF: 10000 mA
- Package Type: Other
- RoHS Compliant: Yes
- VF: 0.8800 volts
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Supplier: Nexperia B.V.
Description: Planar Schottky barrier double diode encapsulated in a SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Features and benefits Low switching losses Capability of absorbing very high surge current Fast recovery time Guard ring protected
- Applications: Rectifier Diode, Switching
- IF: 1000 mA
- Package Type: SOT223, Other
- RoHS Compliant: Yes
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Supplier: Marki Microwave LLC
Description: features excellent return losses, gain flatness and high dynamic range making it suitable for RF front-end applications. The size and low power consumption of the ADM-8625PC make it ideal for low SWaP applications.
- Amplifier Type: Low Noise Amplifier, Other
- Frequency Range: 750 to 8000 MHz
- Package Type: Connectorized, Other
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Supplier: SemiGen
Description: limiter designs in the 100 MHz to 30 GHz frequency ranges. They are ideal for use in high-power applications and can be supplied in chip form or in your choice of packages below. Features: Low Capacitance and Resistance Easily Bondable Low Loss
- Package Type: Other
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Supplier: Microchip Technology, Inc.
Description: frequency Low switching losses Low noise (EMI) switching Easy to parallel Improved system reliability AC-DC/DC-DC converters Inverters Switch mode power supply H/EV chargers H/EV onboard chargers & powertrain
- Diode Type: Schottky Barrier Diodes
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Featured Products Top
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Supports DC to 50 GHz broadband applications Low Loss & High Isolation (read more)
Browse RF Switches Datasheets for Win Source Electronics -
. Another type of diode is the Schottky diode, constructed from a metal-to-metal semiconductor contact and featuring a lower forward voltage drop than that of traditional P-N junction diodes. They can be used as a low-loss rectifier, but the reverse leakage current of these (read more)
Browse Diodes Datasheets for ASAP Semiconductor LLC -
Industry's lowest DCR and ultra low AC losses over a wide frequency range Superior current handling with soft saturation characteristics AEC-Q200 Grade 1 (−40°C to +125°C) Wide inductance range up to 8.2 µH RoHS-compliant, halogen free. 260°C compatible. Tin-silver (96.5/3.5) over copper terminations COTS Plus tin-silver-copper and tin-lead terminations available (read more)
Browse Chip Inductors Datasheets for Coilcraft, Inc. -
High-frequency power electronics demand capacitors that combine efficiency, stability, and reliability. Engineers need components that maintain low loss, minimal temperature (read more)
Browse Film Capacitors Datasheets for Shenzhen Weidy Industrial Development Co., Ltd. -
Power Loss Protection Power Management Unit with Integrated High-Current Buck Converters, Buck-Boost Converter and Low Dropout Regulator (LDO) The ACT85411 is a highly integrated, highly configurable multiple output power management IC (PMIC) with built-in power loss protection (PLP (read more)
Browse Supervisory Circuits and Battery Monitor Chips Datasheets for Qorvo -
built-in power loss protection (PLP). Four high-efficiency Buck regulators can supply 3 x 4 A and 1 x 2 A output current. The output voltage can go as low as 0.6 V. In addition, there is a 12 V boost converter plus powers the internal gate drivers for maximum efficiency. The power loss (read more)
Browse Supervisory Circuits and Battery Monitor Chips Datasheets for Qorvo -
Redundant Power should be considered for any equipment where the highest attainable reliability is essential, and an unexpected loss of power would be disastrous. Such applications include communications systems (both voice and data types), computer systems (volatile memory systems in particular (read more)
Browse Programmable Power Supplies Datasheets for Acopian Power Supplies -
/N AE5500SSH6558 Our P/N AE5500SSH6558 has a Cut Off Frequency of 5.5GHz and a Pass Band Frequency of 5.5?23GHz. The Pass Band Insertion Loss is ≤2.0dB @ 5.5?5.8GHz ≤1.0dB @ 5.8?23GHz. Follow us on: (read more)
Browse RF Filters and Microwave Filters Datasheets for Anatech Electronics, Inc. -
Coilcraft, Inc.
Coilcraft Introduces XEL50xx ultra low-loss power inductors for high-frequency applications
Coilcraft introduces its new XEL50xx family of high-performance, molded power inductors that offer exceptionally low DC resistance and ultra-low AC losses, greatly improving power converter efficiency at high frequencies (2 to 5 MHz) and high ripple current. The use of high switching (read more)
Browse Inductors, Coils, and Chokes Datasheets for Coilcraft, Inc. -
100A design using a 0.5mΩ shunt resistor can waste up to 5 watts of power as pure heat, requiring costly and space-consuming heatsinks. The ACS37200’s ultra-low 50 µΩ resistance reduces that power loss to just 0.5 watts—a 90% reduction. This means less energy is wasted (read more)
Browse Current Sensors Datasheets for Allegro MicroSystems Inc.
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AN3010: An Examination of Recovery Time of an Integrated Limiter/LNA
noise figure, a high power and low loss limiter is required. The purpose of this application note is to document the test methodology employed and test results achieved measuring the small-signal gain recovery time of a balanced LNA with an integrated Schottky diode limiter and high power load
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DC Motors: Principle of Operation
to the amount of interacting electromagnetic field force required to achieve the opposing work load. In addition to the force and motion needed by the device one must consider any efficiency loss in the conversion of electrical power into mechanical work (watts). Stepper Motor Overview. What is a Stepper
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Semiconductor Power Devices
Hall RN, “Power rectifiers and transistors”, Proc IRE 40, 1512–1518 (1952) [Hua94] Huang Q: “MOS-Controlled Diode - A New Class of Fast Switching Low Loss Power Diode ” VPEC, pp. 97–105 (1994) [Hua95] Huang Q, Amaratunga GAJ: “MOS Controlled Diodes - A new…
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Dielectrically isolated lateral merged PiN Schottky (LMPS) diodes
Power integrated circuits for high-voltage, high-frequency applications require fast switching, low loss power diodes that can be integrated with power switches such as LDMOSFET’s and LIGBT’s.
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VIA-7 amorphous silicon FET with Schottky contacts
The low loss power diode (LLD) .
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VIA-6 novel low-loss and high speed diode utilizing an "IDEAL" ohmic contact
The low loss power diode (LLD) .
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Integral diodes in lateral DI power devices
Power integrated circuits for applications such as inverters for motor speed control require high speed, low loss power diodes which can be integrated with power switches such as LDMOSFETs and LIGBTs [11.
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Experimental demonstration of the MOS controlled diode (MCD)
[6] Qin Huang and Gehan Amaratunga, “MOScontrolled diodes-a new class of fast switching, low loss power diodes ,” Solid-state Electronics, Vo1.38, .
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An analysis and experimental approach to MOS controlled diodes behavior
[6] Q. Huang and G. Amaratunga, “MOS controlled diodes—A new class of fast switching, low loss power diodes ,” Solid-State Electron., vol.
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Microturbine Power Conversion Technology Review
Schottky diodes are low power low loss diodes while the pn diodes have higher losses but they can be used in a wider power range.
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Instruments, Measurement, Electronics and Information Engineering
12-19 kV 4H-SiC pin diodes with low power loss [c].
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高耐圧 SiC FET 及びダイオードの
(6) Y. Sugawara, D. Takayama, K. Asano, R. Singh, J. Palmour, and T. Hayashi, “12-19kV 4H-SiC pin Diode with Low Power Loss ”, Proceedings of ISPSD’01, pp.27-30 (2001).
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