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Supplier: Microchip Technology, Inc.
Description: PD70224 is a dual pack of MOSFET-based full-bridge rectifiers. It contains low-Rds 0.16Ω N-channel MOSFETs for much higher overall efficiency and higher output power, particularly when used in Powered Devices (PDs) for PoE applications. The entire drive circuitry for
- Features: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: Bridge Rectifiers Power MOSFET Stage for Boost Converters
- Features: Other
- Diode Applications: Rectifier Diode
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Supplier: Radwell International
Description: N CHANNEL MOSFET, 100V, 3.5A, TO-205AF; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:3.5A; DRAIN SOURCE VOLTAGE VDS:100V; ON RESISTANCE. FREE 2 YEAR RADWELL WARRANTY
- Diode Applications: Rectifier Diode
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Supplier: ODG (Origin Data Global)
Description: MODULE MOSFET BRIDGE RECT V1-B
- VF: 1.39 volts
- IR: 0.03 mA
- Tj: -40 to 150 C
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Description: MODULE MOSFET BRIDGE RECT V1-B
- VF: 1.39 volts
- Tj: -40 to 150 C
- Features: Other
- Diode Applications: Rectifier Diode
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Supplier: Littelfuse, Inc.
Description: The PFC Mosfet modlue series offers a rugged input rectifier bridge and a Mosfet with a fast diode in boost (PFC) configuration.
- Features: Other
- Diode Applications: Rectifier Diode
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Supplier: Littelfuse, Inc.
Description: Offers a rugged input rectifier bridge and a Mosfet with a fast diode in boost (PFC) configuration
- Features: Other
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET Standard Rectifier Bridge
- Features: MOSFET
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Supplier: Infineon Technologies AG
Description: 650 V, 60 A EasyBRIDGE™ rectifier bridge modules with CoolSiC™ MOSFET and CoolSiC™ Schottky diode G5 650 V, NTC, in an Easy 1B housing with PressFIT contact technology. Summary of Features Best in Class packages with 12mm height Leading edge WBG material Very low module stray
- IFSM: 340 amps
- Features: Bridge, Other
- Diode Applications: Power Diode, Rectifier Diode
- RoHS Compliant: RoHS Compliant
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Supplier: Richardson RFPD
Description: Controllable Bridge Rectifier
- rDS(on): 0.02 ohms
- Features: MOSFET, Power MOSFET
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Supplier: Infineon Technologies AG
Description: Improved in Rating Pb-Free; RoHS Compliant; Hologen Free Potential Applications Brushed Motor Drive Applications BLDC Motor Drive Applications Battery Powered circuits Half-Bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing
- rDS(on): 0.00072 ohms
- TJ: 175 C
- VGS(off): 1 to 2.4 volts
- Features: MOSFET, Other, Power MOSFET
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Supplier: Nexperia B.V.
Description: energy rating (EAS) and 100% tested Ha-free and RoHS compliant MLPAK33 package Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint) Applications Synchronous rectifier in AC-DC and DC-DC Primary side switch – 48 V DC-DC BLDC motor control USB-PD adapters
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
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Supplier: Infineon Technologies AG
Description: DDB2U60N07W1RF_B58 | Bridge Rectifier & AC-Switches 1ED3461MC12M | Gate driver ICs 1ED3121MC12H | Gate driver ICs DDB2U60N07W1RF_B58 | Bridge Rectifier & AC-Switches 1ED3461MC12M | Gate driver ICs 1ED3121MC12H | Gate driver ICs DDB2U60N07W1RF_B58 | Bridge
- Features: Industrial, MOSFET, Other
- Packing Method: Tray
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Supplier: DigiKey
Description: INT DUAL MOSFET BRIDGE RECTIFIER
- Operating Temperature: -40 to 85 C
- Features: Other
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Supplier: Infineon Technologies AG
Description: losses as well as better thermal resistance. This 600V CoolMOS™ SJ MOSFET targets applications such as active bridge rectifiers, inverter stages, in-rush relays, PLCs, HV DC lines, power solid state relays and solid state circuit breakers. The 600V CoolMOS™ S7 SJ MOSFET
- rDS(on): 0.065 ohms
- QG: 51 nC
- TJ: -55 to 150 C
- VGS(off): 3.5 to 4.5 volts
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Supplier: Nexperia B.V.
Description: switching applications Strong avalanche energy rating (Eas) Avalanche rated and 100% tested Ha-free and RoHS compliant LFPAK56 package Wave-solderable Applications Synchronous rectifier in AC-DC and DC-DC Primary side switch in DC-DC BLDC motor control USB-PD adapters Full-bridge and
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
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Supplier: Nexperia B.V.
Description: adapters Flyback and resonant topologies Full-bridge and half-bridge applications
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
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Supplier: Nexperia B.V.
Description: applications Strong avalanche energy rating (Eas) Avalanche rated and 100% tested Ha-free and RoHS compliant LFPAK88 package Applications Synchronous rectifier in AC-DC and DC-DC Primary side switch in DC-DC BLDC motor control Full-bridge and half-bridge applications Battery
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
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Supplier: Allied Electronics, Inc.
Description: for active ORing and hot-swap applications. All three of the MOSFETs are designed for secondary-side synchronous rectification in 5-19Vout flyback converter and resonant half-bridge applications and are suitable for isolated DC-DC applications as primary-side switches in forward or
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Supplier: Littelfuse, Inc.
Description: Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs
- Polarity: N-Channel
- Features: Other
- Package Type: TO-247
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: INTERNATIONAL RECTIFIER IR2011PBF. DRIVER, HALF BRIDGE, 200V, 8DIP Product overview: IR2011PBF from International Rectifier is a Gate Driver IC for power MOSFET and IGBT drive stages, motor inverters, DC-DC converters, lighting control, and industrial power electronics.
- Supply Voltage: 10 to 20 volts
- Number of Outputs: 2
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: IC, MOSFET DRVR, 3-Phase Bridge , LCC-44 Product overview: IR21363JTRPBF from International Rectifier is a Gate Driver IC for power MOSFET and IGBT drive stages, motor inverters, DC-DC converters, lighting control, and industrial power electronics. It is useful for
- Supply Voltage: 12 to 20 volts
- Fall Time: 75 ns
- Features: Other
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Supplier: Win Source Electronics
Description: Win Source Part Number: 969469-IR2235STRPBF Category: Integrated Circuits (ICs)>PMIC - Gate Drivers Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Channel Type: 3-Phase Input Type: Inverting Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET
- Peak Output Current: 0.5 amps
- Supply Voltage: 10 to 20 volts
- Rise Time: 90 ns
- Fall Time: 40 ns
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Half Bridge Based MOSFET Driver, 0.5A, PDSO28, LEAD FREE, MS-013AE, SOIC-28 Product overview: IR2131SPBF from International Rectifier is a Gate Driver IC for power MOSFET and IGBT drive stages, motor inverters, DC-DC converters, lighting control, and industrial power
- Supply Voltage: 10 to 20 volts
- Fall Time: 100 ns
- Features: Other
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1129988-IRMCK311TY Category: Integrated Circuits (ICs)>PMIC - Motor Drivers, Controllers Series: MCE™ Package: Bulk Applications: Appliance Standard Package: 1 Mounting: SMD (SMT) Technology: Power MOSFET, IGBT Function: Controller - Commutation, Direction Management
- Supply Voltage (AC): 1.62 to 3.6 volts
- Supply Voltage (DC): 1.62 to 3.6 volts
- Operating Temperature: -40 to 85 C
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http://dspace.mit.edu/bitstream/handle/1721.1/34465/70716608-MIT.pdf?sequence=2
Two topologies use a three-phase MOSFET bridge rectifier in conjunction with either a continuous- .
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Designing a Battery-Less Piezoelectric based Energy Harvesting Interface Circuit with 300 mV Startup Voltage
For AC-DC rectifier circuit we used four MOSFET bridge rectifier and we got output (300mV) from this circuit without loss any voltage.
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Integrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation
MOSFET bridge rectifier in series with an “active” diode was selected for synchron- ous rectification.
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Analysis of UHF RFID CMOS rectifier structures and input impedance characteristics
At HF ISM band, 13.56 MHz, it is more common to use diode connected transistors or a MOSFET bridge rectifier .
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Optimal and sub-optimal power management in broadband vibratory energy harvesters with one-directional power flow constraints
From left to right, these consist of an active MOSFET bridge rectifier , a buck-boost switchmode DC/DC converter, and an energy storage device such as a supercapacitor or rechargeable battery.
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CMOS Energy Harvester Based on a Low-Cost Piezoelectric Acoustic Transducer
When the battery voltage is smaller than 2 V it is passively charged through the MOSFET bridge rectifier .
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Design of a RFID Transponder for Application on Secutiry
To pro- vide a better regulation and high rectified voltage for mi- crochip, a P-type MOSFET bridge rectifier with voltage dou- bler is used in this paper.
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Optimized Wind Energy Harvesting System Using Resistance Emulator and Active Rectifier for Wireless Sensor Nodes
Schematic diagram of full bridge active MOSFET rectifier .
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Transmission line inspection robots: Design of the power supply system
The transformer supplies a 3rd order Chebyshev low-pass filter which interfaces a full bridge MOSFET based rectifier , and sliding mode controlled to emulate a resistor.
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http://www.microsemi.com/document-portal/doc_download/14702-optimizing-the-design-of-3-5kw-single-mosfet-power-factor-correctors
Heatsink thermal resistance was measured by energizing the series-connected rectifier bridge and MOSFET from the rectified and heavily filtered output of an arc-welding transformer.