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Supplier: Texas Instruments
Description: Automotive Catalog Single-Channel High-Speed Mosfet Driver 5-SOT-23 -40 to 125
- Peak Output Current: 2 amps
- Supply Voltage: 4 to 14 volts
- Rise Time: 14 ns
- Fall Time: 14 ns
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Supplier: Texas Instruments
Description: Automotive Catalog Dual 4-A MOSFET Driver with Enable 8-SOIC -40 to 125
- Peak Output Current: 4 amps
- Supply Voltage: 4 to 15 volts
- Rise Time: 20 ns
- Fall Time: 15 ns
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Supplier: Texas Instruments
Description: Automotive Catalog Dual 4-A MOSFET Driver with Enable 8-SOIC -40 to 125
- Peak Output Current: 4 amps
- Supply Voltage: 4 to 15 volts
- Rise Time: 20 ns
- Fall Time: 15 ns
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Supplier: Texas Instruments
Description: Automotive Catalog Non-inverting High-Speed MOSFET Driver with Internal Regulator 5-SOT-23 -40 to 125
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Supplier: Microchip Technology, Inc.
Description: speeds Additional Features Power Semiconductors, Power Modules and RF Power MOSFETs Catalog Eliminating Parasitic Oscillation between Parallel MOSFETs High Frequency Resonant Half Bridge Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC Introduction to
- Features: MOSFET
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Supplier: Microchip Technology, Inc.
Description: Semiconductors, Power Modules and RF Power MOSFETs Catalog Eliminating Parasitic Oscillation between Parallel MOSFETs High Frequency Resonant Half Bridge Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC Introduction to MOSFETs Latest Technology
- Features: MOSFET
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Supplier: Microchip Technology, Inc.
Description: Semiconductors, Power Modules and RF Power MOSFETs Catalog Eliminating Parasitic Oscillation between Parallel MOSFETs High Frequency Resonant Half Bridge Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC Introduction to MOSFETs Latest Technology
- Features: MOSFET
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Supplier: Microchip Technology, Inc.
Description: MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC Introduction to MOSFETs Latest Technology PT IGBTs vs. Power MOSFETs Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced Failures
- Features: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF
- Features: MOSFET
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Supplier: Win Source Electronics
Description: TO-247-3 Standard Package: 30 Catalog: N-Channel Standard FETs FET Type: MOSFET N-Channel Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 1500V (1.5kV) Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) @ Vgs: 89.3nC @ 10V
- TJ: -55 to 150 C
- Features: MOSFET, Other
- Polarity: N-Channel
- Package Type: SOT3, TO-247
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: VR12.5 Buck MOSFET Driver Buck MOSFET Driver, 3000-REEL Product overview: NCP81146MNTBG from onsemi is a Gate Driver IC for power MOSFET and IGBT drive stages, motor inverters, DC-DC converters, lighting control, and industrial power electronics. It is useful for engineers and
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: IC 3 A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, SOP-8, MOSFET Driver Product overview: LM5101AMRX from Texas Instruments is a Gate Driver IC for power MOSFET and IGBT drive stages, motor inverters, DC-DC converters, lighting control, and industrial power electronics. It is
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: VR12.5 MOSFET Driver VR12.5 MOSFET DRIVER, 3000-REEL Product overview: NCP81151BMNTBG from onsemi is a Gate Driver IC for power MOSFET and IGBT drive stages, motor inverters, DC-DC converters, lighting control, and industrial power electronics. It is useful for engineers and
- Supply Voltage: 4.5 volts
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Supplier: Win Source Electronics
Description: Standard Package: 50 Catalog: Half Bridge No: 546215 Operating Supply Voltage: 10 V ~ 16.6 V Channel Type: Synchronous Input Type: RC Input Circuit Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT N-Channel MOSFET High Side Voltage - Max (Bootstrap): 600V Current
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Featured Products Top
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Wolfspeed offers a new family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as solar and energy storage systems, EV charging, Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, high (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
Rochester Electronics stocks over two-billion units of transistors and gate drive devices, covering 20,000-part numbers. Our inventory is a mix of both active and obsolete devices, with 40% exhibiting lead times greater than 20 weeks.
(read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Rochester Electronics -
Nexperia today announced the launch of 16 new 80 V and 100 V power MOSFETs in the innovative copper-clip CCPAK1212 package, delivering industry-leading power density and outright performance. The innovative copper-clip design (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Nexperia's new package DFN0603, the market's smallest DFN packaged MOSFET. This new ultra-small package allows designers to achieve more performance in a smaller footprint, with a 74% reduction in RDS(on) as well as using 13% less space when comparing to the industry's next smallest package (DFN0604). These benefits mean the package is the perfect fit for next generation portables, wearables and mobile devices. (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Vishay introduces the SiHK050N65E, an advanced Gen 4.5 650 V E Series power MOSFET delivering superior efficiency for telecom, industrial, and computing applications. This n-channel MOSFET achieves 48.2% lower on-resistance and 65.4% improved resistance times gate charge FOM compared to previous (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for New Yorker Electronics Co., Inc. -
Good-Ark Semiconductor introduces the GSFA20106, a high-performance 200V, 106A, 9.4mΩ N-Channel MOSFET designed for demanding high-frequency switching applications. Engineered with the latest deep trench technology and advanced process techniques, this MOSFET achieves ultra-low RDS(ON) and (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for New Yorker Electronics Co., Inc. -
Critical Thermal Management for High-Power MOSFETs High-power MOSFETs generate significant heat during operation. Excessive temperature can reduce efficiency, cause thermal stress (read more)
Browse Heat Sinks Datasheets for ToneCooling Technology Co., Ltd -
The dual N-Channel MOSFET array by Advanced Linear Devices is precision factory-matched using ALD's EPAD® CMOS technology. These dual monolithic devices feature a Zero-Threshold™ voltage, which enables circuit designs with input/output signals (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Wolfspeed offers a family of 1200 V silicon carbide MOSFETs and Schottky diodes that are optimized for use in high power applications such as UPS, motor control and drives, switched-mode power supplies, solar and energy storage systems, electric vehicle charging, high (read more)
Browse Diodes Datasheets for DigiKey -
Announcing the launch of our two new DSN packages, DSN1006 & DSN1010. 2 ultra-compact wafer-level packages provide designers more flexibility of choice within mobile and portable applications. With RDS(on) up to 25% better than competing devices in the market, the packages minimise energy losses, increase efficiency and reduce self heating.
(read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V.
Conduct Research Top
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Matching MOSFET Drivers to MOSFETs
There are many MOSFET technologies and silicon processes in existence today, with new advances being made every day. To make a generalized statement about matching a MOSFET driver to a MOSFET based on voltage/current ratings or die sizes is very difficult, if not impossible. As with any design
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SiC - MOSFETs
breakdown voltage. ROHM Semiconductor offers an extensive lineup of SiC MOSFETs, covering breakdown voltage from 400V to 1700V and current rating from 10A to 63A. Devices are available in through-hole packages as well as bare die.
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What are MOSFETs? - MOSFET Switching Characteristics and Temperature Characteristics
In the previous session, we explained MOSFET parasitic capacitances. This time, we will discuss the switching characteristics of MOSFETs.
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Silicon RF Power MOSFETS
Silicon RF Power MOSFETS. Providing general guidelines for understanding the design and operation of the transistors, this book describes the physics, design considerations and RF performance of silicon power MOSFETs.
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Terminology Relating to MOSFET Specifications
MOSFETs have many parameters, a number of which have already been considered in these articles; here they are listed in summary.
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An Introduction to Depletion-mode MOSFETs
Since the mid-nineteen seventies the "enhancement-mode " MOSFET has been the subject of almost continuous global research, development, and refinement by both the semiconductor industry and academia. As a result it has become the predominant MOSFET topology that encompasses discrete MOS power
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What are MOSFETs? - Types and Features of High Voltage Super-Junction MOSFET
In the previous section, the product positioning of Si-MOSFETs, IGBTs and SiC-MOSFETs, which in recent years have become the most important power transistors, was reviewed, and super-junction MOSFETs (hereafter "SJ-MOSFETs"), which are representative of the latest high-voltage Si MOSFETs, were
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What are MOSFETs? - MOSFET Parasitic Capacitance and Its Temperature Characteristic
An additional explanation of the characteristics of Si MOSFETs that are at present widely used as power switches.
More Information Top
Indicates content that may require registration and/or purchase.
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Optimizing distribution bus voltages
MOSFET catalog , Motorola Inc., Phoenix,AZ,1994 & on 6.
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Comparison of class-E amplifier with nonlinear and linear shunt capacitance
… amplifier are satisfied; 3) simplified equa- tions for the nonlinear shunt capacitance and series reactance of the class-E amplifier; 4) an expression for the nonlinear shunt capacitance which uses data given in most power MOSFET manufacturer’s catalog ; and 5) a design …
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A temperature-dependent electrothermal MOSFET model for calculating its current loadability
The electrothermal model is based on catalog data about MOSFET .
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Modeling the gate more accurately for power MOSFETs
R. A. Wunderlich, “ASTAP power MOSFET model from fendor catalog parameters,” Technical Report TR OI.Al85, IBM: May 26, 1987.
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Switching Power Supply Design, Third Edition > MOSFET and IGBT Power Transistors and Gate Drive Requirements
Possible plastic-cased 450-V MOSFET choices from the Motorola catalog are shown in Table 9.1.
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Quality & Eco-Info - Content & Schedule Search
Automotive Catalog Dual 4-A MOSFET Driver with Enable .
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UCC27423-Q1 | Gate Driver | AC/DC and Isolated DC/DC Power Supply | Description & parametrics
Automotive Catalog Dual 4-A MOSFET Driver with Enable .
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Email Alert Signup - TI
UCC27425-Q1 Automotive Catalog Dual 4-A MOSFET Driver with Enable .