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Supplier: VAST STOCK CO., LIMITED
Description: Photodiodes High Speed Si APD w/1.3Ghz Amplifier
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Supplier: Electro Optical Components, Inc.
Description: EOC offers a variety of silicon photodiode options from IFW Optronics: Silicon Photodiodes with an Integrated Low Noise JFET Amplifier Quadrant Photodiodes
- Active Area Diameter or Length: 2.5 to 7.9 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
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Supplier: PREMA Semiconductor GmbH
Description: Two differential pairs of photodiodes with amplifiers The optical sensor IC PR5401 consists of two pairs of photodiodes placed in opposite quadrants with differential amplifiers. If illuminated uniformly, the output is Vcc/2, but depends on the balance of illumination on
- Array: Yes
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: PN Photodiode
- Photodiode Material: Silicon
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Supplier: Hamamatsu Photonics
Description: Flat response characteristics up to high frequency bands The S9055 Si PIN photodiode delivers a high-speed response exceeding 1 GHz at low bias voltage (VR=2 V). The low capacitance (less than 1 pF) makes the S9055 ideal for combination with high-speed trans
- Active Area Diameter or Length: 0.2000 mm
- Active Area Height: 0.2000 mm
- Dark Current: 0.1000 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Electro Optical Components, Inc.
Description: LED Microsensor NT LLC is focused on developing and manufacturing optoelectronic devices for the mid-infrared spectral range. The company offers a wide range of Light Emitting Diodes (LEDs), LED arrays and spectral matched Photodiodes (PD) that cover the spectral range from 1600 to 5000 nm
- Active Area Diameter or Length: 0.3000 to 1 mm
- Dark Current: 10000 to 2.50E7 nA
- Noise Equivalent Power (NEP): 9.00E-13 to 6.00E-11 W/Hz½
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
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Supplier: Hamamatsu Photonics
Description: Flat response characteristics up to high frequency bands The S9055-01 Si PIN photodiodes deliver a high-speed response exceeding 1 GHz at low bias voltage (VR=2 V). The low capacitance (less than 1 pF) makes the S9055-01 ideal for combination with high-speed trans
- Active Area Diameter or Length: 0.1000 mm
- Active Area Height: 0.1000 mm
- Dark Current: 0.1000 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Electro Optical Components, Inc.
Description: EOC offers a variety of silicon photodiode options from IFW Optronics: Silicon Photodiodes with an Integrated Low Noise JFET Amplifier Quadrant Photodiodes
- Active Area Diameter or Length: 4.8 to 7 mm
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
- Spectral Response: Visible, IR
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Supplier: OSI Optoelectronics
Description: ideal for coupling to an operational amplifier in the current mode. For further details refer to the "Photodiode Characteristics" section of this catalog.
- Active Area Diameter or Length: 2.54 mm
- Active Area Height: 1.5 mm
- Noise Equivalent Power (NEP): 1.90E-14 W/Hz½
- Operating Temperature: -40 to 100 C
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Supplier: OSI Optoelectronics
Description: The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photop general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100 nm. They have an integrated package ensuring low noise output under a variety of operating
- Active Area Diameter or Length: 2.54 mm
- Dark Current: 0.2500 nA
- Noise Equivalent Power (NEP): 1.40E-14 W/Hz½
- Operating Temperature: 0.0 to 70 C
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Supplier: OSI Optoelectronics
Description: The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photop general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100 nm. They have an integrated package ensuring low noise output under a variety of operating
- Active Area Diameter or Length: 2.54 mm
- Dark Current: 0.2500 nA
- Noise Equivalent Power (NEP): 1.40E-14 W/Hz½
- Operating Temperature: 0.0 to 70 C
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Supplier: OSI Optoelectronics
Description: measurements. Alternately, the output can be measured directly with an oscilloscope or with an amplifier. Please refer to the "Photodiode Characteristics" section for further details.
- Active Area Diameter or Length: 9.2 mm
- Active Area Height: 20.7 mm
- Dark Current: 1200 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics
Description: Large area photodiode integrated with op amp and TE-cooler THe S9295 is a thermoelectrically cooled Si photodiode with preamp developed for low-light-level detection. A large area photodiode, op amp, TE-cooler and feedback resistor (10 GO) are integrated into a single package. A
- Active Area Diameter or Length: 10 mm
- Active Area Height: 10 mm
- Photodiode Material: Silicon
- Spectral Response: UV, IR
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Supplier: Hamamatsu Photonics
Description: Si photodiode with BNC connector The S2281 is a Si photodiode sealed in a metal package with a BNC connector. This configuration allows easy connection to Hamamatsu C9329-01 photosensor amplifier. The large photosensitive area makes the S2281 well suited for optical power meters
- Active Area Diameter or Length: 11.3 mm
- Active Area Height: 11.3 mm
- Dark Current: 0.5000 nA
- Photodiode Material: Silicon
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order
- Active Area Diameter or Length: 10 mm
- Operating Temperature: -20 to 80 C
- Photodiode Package / Mounting: Leaded
- Rise Time: 250 ns
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Supplier: Electro Optical Components, Inc.
Description: . Hybrid units with integrated amplifiers are also available. To avoid damaging photodiodes during soldering and cleaning, consider using sockets. SiC photodiodes features & types High responsivity – 0.13 A/W peak UV radiation hardness Cost
- Active Area Diameter or Length: 1.1 to 3.6 mm
- Active Area Height: 1.1 to 3.6 mm
- Photodiode Material: Other
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order
- Active Area Diameter or Length: 1 mm
- Operating Temperature: -20 to 80 C
- Photodiode Package / Mounting: Connectorized
- Quantum Efficiency: 100 %
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order
- Active Area Diameter or Length: 10 mm
- Operating Temperature: -20 to 80 C
- Photodiode Package / Mounting: Leaded
- Rise Time: 250 ns
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order
- Active Area Diameter or Length: 10 mm
- Operating Temperature: -20 to 80 C
- Photodiode Package / Mounting: Leaded
- Rise Time: 250 ns
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Supplier: ASAP Semiconductor LLC
Description: IC PHOTODIODE/AMPLIFIER 8 DIP
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Supplier: Capella Microsystems, Inc.
Description: PDIC Integrated Photodiode and I/V Amplifiers (PDICs) Capella provides complete silicon solutions for CD/DVD pick-up head systems. The PDIC family is designed for low-power and portable optoelectronic devices that enable faster read speeds and smaller footprints in the pick up heads,
- Spectral Response: 780 nm
- Supply Voltage: 5.5 volts
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Supplier: MOXTEK, Inc.
Description: digital pulse shaping amplifier. The XPINXT package is ideal for benchtop and portable applications where an integrated temperature controller is not required. Features: Si-PIN diode Small, compact design Two-stage thermoelectric cooler Stable
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
- Spectral Response: X-ray
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Supplier: MACOM
Description: MACOM offers the highest sensitivity photodiodes for receiver applications from 2.5G up to 400G. The product portfolio includes APDs and PINs with industry leading performance and reliability. Our photodiode chips have superior bandwidth and temperature stability and are designed to be
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Package / Mounting: Bare Die, Surface Mount Technology (SMT)
- Sensitivity: 0.8000 to 0.9000 A/W
- Spectral Response: IR
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Supplier: Texas Instruments
Description: Integrated Photodiode and Amplifier 8-TO
- RoHS Compliant: Yes
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Supplier: California Eastern Laboratories - CEL
Description: The NR4510 Series is an InGaAs 2.5 Gb/s APD ROSA with an internal pre-amplifier in a receptacle type package designed for SFP transceiver with LC duplex receptacle ideal as a receiver for OC-48 applications.
- Active Area Diameter or Length: 0.0500 mm
- Dark Current: 500 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: ams
Description: The TSL1401CL linear sensor array consists of a 128 × 1 array of photodiodes, associated charge amplifier circuitry, and an internal pixel data-hold function that provides simultaneous-integra tion start and stop times for all pixels. The array is made up of 128 pixels, each of which
- Array: Yes
- Operating Temperature: -25 to 85 C
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Supplier: Newport MKS
Description: The DET-L-SIUV-R-C Silicon Photovoltaic Detector for LIDA™ houses an unbiased, photovoltaic mode operated photodiode coupled to a trans impedance amplifier. The internal 10 mm x 10 mm active area, UV-enhanced Silicon photodiode and low-noise trans impedance amplifier
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Supplier: MACOM
Description: = 1.5Watts. MACOM’s FTTx amplifiers are characterized with industry standard photodiodes, covering optical input ranges from -12 to +3dBm and each sample EVK comes complete with a photodiode and APC connector.
- Applications: Terrestrial RF/Microwave Systems
- Frequency Range: 50 to 1200 MHz
- Maximum Gain: 37 dB
- Maximum Operating Voltage: 12 volts
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Supplier: Newport MKS
Description: The 2151 Femtowatt Silicon Photoreceiver is ideal when you need the ultimate in low-light-level detection in the 300 to 1050 nm range. When used with a chopper and a lock-in amplifier, these receivers can easily achieve sensitivity levels in the femtowatt range. These receivers provide
- Photosensor Type: PIN Photodiode
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Supplier: Semtech Corp.
Description: Semtech offers a portfolio of fully integrated Silicon Germanium (SiGe) BiCMOS and pure CMOS transimpedance amplifiers providing wideband, low noise pre-amplification of a current signal from a PIN photodiode or APD. Gennum's TIAs offer best-in-class performance in limiting, linear or
- Data Rate: 0.1550 to 14.3 Gbps
- RoHS Compliant: Yes
- Supply Voltage (VS): 3.3 volts
- Transimpedance: 3 to 63 kohms
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Supplier: Lingto Electronic Limited
Description: IC PHOTODIODE RCVR C-11-1
- Life Cycle Stage: Removed, Other
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Supplier: Acme Chip Technology Co., Limited
Description: IC PHOTODIODE RCVR C-11-1
- Life Cycle Stage: Removed
- Package Type: Other
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Supplier: Light in Motion LLC
Description: Description The device consists of a photodiode, a linear amplifier, a voltage regulator, a Schmitt trigger and an open collector output transistor. The Schmitt trigger provides hysteresis for noise immunity and pulse shaping. The open collector output allows interfacing with various
- Output Type: Current Output
- Photosensor Type: PIN Photodiode
- Supply Voltage: 16 volts
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Supplier: Broadcom Inc.
Description: Available in SO-8 package, the HCPL-0708 high speed optocoupler utilizes the latest CMOS IC technology to achieve outstanding performance with very low power consumption. Basic building blocks of the HCPL-0708 are a high speed LED and a CMOS detector IC. The detector incorporates an integrated
- Collector Emitter Breakdown Voltage: 5 volts
- Isolation Voltage: 3750 volts
- Mounting Option: Surface Mount
- Operating Temperature: -40 to 100 C
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Integrated Silicon Optoelectronics
PIN photodiodes Amplifiers .
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Low dimensionality spectral sensing for low cost material discrimination
and identification
In this work the anatomy of such specialized sensors is explored by way of a thorough discussion of illuminators, current sources, photodetectors, photodiode amplifiers , control systems and part selection.
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Building Electro-Optical Systems: Making It all Work 2nd Edition Complete Document
Chapter 18 is about building fast, quiet photodiode amplifiers .
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Fast Photodiode Diagnostic on Alcator C-Mod
Tokamakto Study the Plasma Edge/SOL
Structure
The toroidally looking views are coupled to fast photodiode amplifier circuits that record the D, brightness at a rate of 1 MHz.
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Biosensors and Biodetection
(A) Board layout of a 10kHz photodiode amplifier (B) Mounting drawing.
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INSTRUMENTATION IN HIGH ENERGY PHYSICS
The thermal conductivity of liquid xenon is small (0.7 mW c m - 1 K_ 1 ), and only forced currents can effectively carry heat away from the photodiode amplifiers if they are immersed in the liquid.
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Optical System for High-Speed Atomic Force
Microscope
[9] Graeme Jerald G. Photodiode Amplifiers : op amp solutions.
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Large-Area, Low-Noise, High Speed, Photodiode-Based Fluorescence
Detectors with Fast Overdrive Recovery
The second and third changes were only applied to the photodiode amplifier .
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An Apparatus for High Throughput Muscle
Cell Experimentation
* Ground planes on both sides of the PCB split to separately surround the current source and photodiode amplifier .
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UNIVERSITY
OF TRENTO
In the present work, we have analytically calculated the transfer function and input impedance for a photodiode amplifier based on FET input OP-AMPS.