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Supplier: ASAP Semiconductor LLC
Description: IC PHOTODIODE/AMPLIFIER 8 DIP
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Supplier: Electro Optical Components, Inc.
Description: EOC offers a variety of silicon photodiode options from IFW Optronics: Silicon Photodiodes with an Integrated Low Noise JFET Amplifier Quadrant Photodiodes
- Spectral Response Range: 400 to 1,100 nm
- Active Area Diameter or Length: 2.5000000000000004 to 7.900000000000001 mm
- Photodiode Spectral Response: IR, Visible
- Photodiode Package: Leaded, Through Hole Technology (THT)
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Supplier: Texas Instruments
Description: Integrated Photodiode and Amplifier 8-TO
- Features: RoHS Compliant
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Supplier: Electro Optical Components, Inc.
Description: EOC offers a variety of silicon photodiode options from IFW Optronics: Silicon Photodiodes with an Integrated Low Noise JFET Amplifier Quadrant Photodiodes
- Spectral Response Range: 400 to 1,100 nm
- Active Area Diameter or Length: 4.800000000000001 to 7.000000000000001 mm
- Photodiode Spectral Response: IR, Visible
- Photodiode Package: Leaded, Through Hole Technology (THT)
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Supplier: Hamamatsu Photonics Europe
Description: Photodiode array combined with signal processing IC The S11865/S11866 series are Si photodiode arrays combined with a signal processing IC chip. X-ray tolerance has been improved compared to the previous products (S8865/S8866 series). The signal processing IC chip is formed by CMOS
- Spectral Response Range: 200 to 1,000 nm
- Array: Array
- Photodiode Material: Silicon
- Photodiode Spectral Response: X-ray
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Supplier: RS Components, Ltd.
Description: Photop Photodiode/Amplifier Hybrid
- Photodiode Spectral Response: IR
- Features: Other
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Supplier: VAST STOCK CO., LIMITED
Description: Photodiodes High Speed Si APD w/1.3Ghz Amplifier
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Supplier: Electro Optical Components, Inc.
Description: Amplifier AMT-07M converts the output current of a signal source (such as Mid-Infrared photodiode) into a voltage with amplification for subsequent use with various electronic systems, such as lock-in amplifiers, oscilloscopes or A/D converters. Synchronous detector is built in
- Maximum Output: 4 volts
- Output Impedance: 50 ohms
- Operating Temperature: 5 to 59 F
- User Interface: Front Panel and Display
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Supplier: Capella Microsystems, Inc.
Description: PDIC Integrated Photodiode and I/V Amplifiers (PDICs) Capella provides complete silicon solutions for CD/DVD pick-up head systems. The PDIC family is designed for low-power and portable optoelectronic devices that enable faster read speeds and smaller footprints in the pick up heads,
- Spectral Response: 780 nm
- Supply Voltage: 5.5 volts
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Supplier: PREMA Semiconductor GmbH
Description: Two differential pairs of photodiodes with amplifiers The optical sensor IC PR5401 consists of two pairs of photodiodes placed in opposite quadrants with differential amplifiers. If illuminated uniformly, the output is Vcc/2, but depends on the balance of illumination on
- Spectral Response Range: 950 nm
- Operating Temperature: -40 to 85 C
- Array: Array
- Photodiode Spectral Response: IR, Visible
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Supplier: Hamamatsu Photonics Europe
Description: Flat response characteristics up to high frequency bands The S9055 Si PIN photodiode delivers a high-speed response exceeding 1 GHz at low bias voltage (VR=2 V). The low capacitance (less than 1 pF) makes the S9055 ideal for combination with high-speed trans-impedance amplifiers.
- Sensitivity: 0.25 A/W
- Spectral Response Range: 320 to 1,000 nm
- Active Area Diameter or Length: 0.20000000000000004 mm
- Active Area Height: 0.20000000000000004 mm
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Supplier: Newark, An Avnet Company
Description: AMPLIFIER BOARD, PHOTODIODE, 2 CH; Silicon Manufacturer:Twlux; Silicon Core Number:-; Kit Application Type:Amplifier; Application Sub Type:Programmable Gain Amplifier; Kit Contents:Board Only; Product Range:-; SVHC:No SVHC
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Supplier: Texas Instruments
Description: Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP
- Features: Other, RoHS Compliant
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Supplier: OSI Optoelectronics
Description: the photons of shorter wavelengths absorbed in the top silicon and the photons of longer wavelengths penetrating deeper, absorbed by the bottom photodiode. For applications requiring a wider range of wavelength beyond 1.1 µm, an InGaAs photodiode replaces the bottom photodiode.
- Sensitivity: 0.55 A/W
- Spectral Response Range: 400 to 1,000 nm
- Active Area Diameter or Length: 2.54 mm
- Active Area Height: 1.5 mm
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Supplier: OSI Optoelectronics
Description: measurements. Alternately, the output can be measured directly with an oscilloscope or with an amplifier. Please refer to the "Photodiode Characteristics" section for further details.
- Sensitivity: 0.65 A/W
- Spectral Response Range: 350 to 1,100 nm
- Active Area Diameter or Length: 2.3 mm
- Active Area Height: 4.2 mm
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Supplier: OSI Optoelectronics
Description: The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photop general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100 nm. They have an integrated package ensuring low noise output under a variety of operating
- Sensitivity: 0.65 A/W
- Spectral Response Range: 350 to 1,100 nm
- Active Area Diameter or Length: 2.54 mm
- Operating Temperature: 0 to 70 C
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Supplier: Hamamatsu Photonics Europe
Description: Compact, easy-to-use driver circuit The C9118-01 CMOS driver circuit is designed for photodiode arrays with amplifier.The C9118-01 operates a linear image sensor by just inputting two signals (M-CLK and M-RESET) and a signal +5 V supply. The C9118-01 is assembled on a compact board
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Supplier: Electro Optical Components, Inc.
Description: LED Microsensor NT LLC is focused on developing and manufacturing optoelectronic devices for the mid-infrared spectral range. The company offers a wide range of Light Emitting Diodes (LEDs), LED arrays and spectral matched Photodiodes (PD) that cover the spectral range from 1600 to 5000 nm,
- Sensitivity: 0.7 to 1.6 A/W
- Active Area Diameter or Length: 0.30000000000000004 to 1 mm
- Dark Current: 10,000 to 25,000,000 nA
- Noise Equivalent Power (NEP): 0.0000000000009 to 0.00000000006 W/Hz½
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Supplier: Newport MKS
Description: The DET-L-SIUV-R-C Silicon Photovoltaic Detector for LIDA™ houses an unbiased, photovoltaic mode operated photodiode coupled to a trans impedance amplifier. The internal 10 mm x 10 mm active area, UV-enhanced Silicon photodiode and low-noise trans impedance amplifier
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order
- Active Area Diameter or Length: 10.000000000000002 mm
- Rise Time: 250 ns
- Operating Temperature: -20 to 80 C
- Photodiode Package: Leaded
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order
- Active Area Diameter or Length: 1 mm
- Rise Time: 0.7 ns
- Quantum Efficiency: 100 %
- Operating Temperature: -20 to 80 C
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order
- Active Area Diameter or Length: 10.000000000000002 mm
- Rise Time: 250 ns
- Operating Temperature: -20 to 80 C
- Photodiode Package: Leaded
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order
- Sensitivity: 0.44 A/W
- Spectral Response Range: 400 to 1,100 nm
- Active Area Diameter or Length: 3.9000000000000004 to 4.4 mm
- Rise Time: 50 ns
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Supplier: Newport MKS
Description: The DET-L-PBS-R-U detector for LIDA™ houses a Lead sulfide detector w/integrated voltage supply and AC coupled pre-amplifier. The integrated power supply provides a 100 V bias of the PbS detector and the pre-amplifier allows for adjustable gains of x2, x10, and x50 with up to 8 kHz
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Supplier: MACOM
Description: MACOM’s FTTx amplifiers are characterized with industry standard photodiodes, covering optical input ranges from -12 to +3dBm and each sample EVK comes complete with a photodiode and APC connector.
- Frequency Range: 50 to 1,200 MHz
- Minimum Gain: 9 dB
- Maximum Gain: 37 dB
- Noise Figure: 3.5 to 4.8 dB
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Supplier: Newport MKS
Description: The DET-L-GE-R-C Germanium Photovoltaic Detector for LIDA™ houses an unbiased, photovoltaic mode operated photodiode coupled to a trans impedance amplifier. The internal 5 mm diameter active area Germanium photodiode and low-noise trans impedance amplifier provides for
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Supplier: Semtech Corp.
Description: Semtech offers a portfolio of fully integrated Silicon Germanium (SiGe) BiCMOS and pure CMOS transimpedance amplifiers providing wideband, low noise pre-amplification of a current signal from a PIN photodiode or APD. Gennum's TIAs offer best-in-class performance in limiting, linear or
- Data Rate: 0.155 to 14.3 Gbps
- Transimpedance: 3 to 63 kohms
- Supply Voltage (VS): 3.3 volts
- Standards and Certifications: RoHS Compliant
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Supplier: ValueTronics International, Inc.
Description: tunneling current of scanning tunneling microscopes (STM) Detection of conductive probe current for atomic force microscope (AFM) current measurement As a preamplifier for a lock-in amplifier The CA5350 programmable current amplifier is a variable gain type, current-input,
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Supplier: Renesas Electronics Corporation
Description: and photodiode amplifiers. The ISL28110 single amplifier and the ISL28210 dual amplifiers are available in the 8 Ld SOIC package. All devices are offered in standard pin configurations and operate over the extended temperature range from -40°C to +125°C.
- Supply Voltage (VS): 9 to 40 volts
- Supply Current (IS): 2.5500000000000003 milliamps
- Input Offset Voltage (VOS): 0.3 millivolts
- Input Bias Current (IBIAS): 0.0000003 to 0.000002 µA
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Supplier: VAST STOCK CO., LIMITED
Description: Amplifier IC Development Tools MCP6031 Photodiode PICtail Plus DemoBrd
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Supplier: MACOM
Description: MACOM offers the highest sensitivity photodiodes for receiver applications from 2.5G up to 400G. The product portfolio includes APDs and PINs with industry leading performance and reliability. Our photodiode chips have superior bandwidth and temperature stability and are designed to be
- Sensitivity: 0.8 to 0.9 A/W
- Spectral Response Range: 1,200 to 1,650 nm
- Photodiode Type: Avalanche Photodiode
- Photodiode Package: Bare Die, Surface Mount Technology (SMT)
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Supplier: Microchip Technology, Inc.
Description: 1.8V, while only drawing 4.4 µA/amplifier (typical) of quiescent current. These features make the family of op amps well suited for photodiode amplifier, pH electrode amplifier, low leakage amplifier, and battery powered signal conditioning applications, etc. The
- Features: Other
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Integrated Silicon Optoelectronics
PIN photodiodes Amplifiers .
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Low dimensionality spectral sensing for low cost material discrimination
and identification
In this work the anatomy of such specialized sensors is explored by way of a thorough discussion of illuminators, current sources, photodetectors, photodiode amplifiers , control systems and part selection.
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Building Electro-Optical Systems: Making It all Work 2nd Edition Complete Document
Chapter 18 is about building fast, quiet photodiode amplifiers .
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Fast Photodiode Diagnostic on Alcator C-Mod
Tokamakto Study the Plasma Edge/SOL
Structure
The toroidally looking views are coupled to fast photodiode amplifier circuits that record the D, brightness at a rate of 1 MHz.
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Biosensors and Biodetection
(A) Board layout of a 10kHz photodiode amplifier (B) Mounting drawing.
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INSTRUMENTATION IN HIGH ENERGY PHYSICS
The thermal conductivity of liquid xenon is small (0.7 mW c m - 1 K_ 1 ), and only forced currents can effectively carry heat away from the photodiode amplifiers if they are immersed in the liquid.
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Optical System for High-Speed Atomic Force
Microscope
[9] Graeme Jerald G. Photodiode Amplifiers : op amp solutions.
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Large-Area, Low-Noise, High Speed, Photodiode-Based Fluorescence
Detectors with Fast Overdrive Recovery
The second and third changes were only applied to the photodiode amplifier .
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An Apparatus for High Throughput Muscle
Cell Experimentation
* Ground planes on both sides of the PCB split to separately surround the current source and photodiode amplifier .
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UNIVERSITY
OF TRENTO
In the present work, we have analytically calculated the transfer function and input impedance for a photodiode amplifier based on FET input OP-AMPS.