-
Supplier: Microchip Technology, Inc.
Description: Additional Features Eight NPN Darlington Pairs Collector Currents to 600mA Output Voltages from 50V to 95V Internal Clamping Diodes for Inductive loads DTL, TTL, PMOS, or CMOS Compatible inputs
- IC Package Type: Other
- Output Voltage: 30 volts
- Peak Output Current: 0.5000 amps
-
Supplier: Microchip Technology, Inc.
Description: voltages combined with 500mA current carrying capabilities. Five different input configurations provide optimized designs for interfacing with DTL, TTL, PMOS, or CMOS drive signals. These Darlington array are designed to operate from -55°C to 125°C ambient temperature in a 18-pin dual in
- IC Package Type: Other
- Output Voltage: 30 volts
- Peak Output Current: 0.5000 amps
-
Supplier: Microchip Technology, Inc.
Description: voltages combined with 500mA current carrying capabilities. Five different input configurations provide optimized designs for interfacing with DTL, TTL, PMOS, or CMOS drive signals. These devices are designed to operate from -55°C to 125°C ambient temperature in a 16 pin dual in line ceramic
- IC Package Type: Other
- Output Voltage: 30 volts
- Peak Output Current: 0.5000 amps
-
-
Supplier: Microchip Technology, Inc.
Description: voltages combined with 500mA current carrying capabilities. Five different input configurations provide optimized designs for interfacing with DTL, TTL, PMOS, or CMOS drive signals. These devices are designed to operate from -55°C to 125°C ambient temperature in a 16 pin dual in line ceramic
- IC Package Type: Other
- Output Voltage: 30 volts
- Peak Output Current: 0.5000 amps
-
Supplier: VAST STOCK CO., LIMITED
Description: Gate Drivers Low-Voltage 27V PMOS NMOS Bridge Driver
-
Supplier: Quarktwin Technology Ltd.
Description: Half Bridge (2) Driver General Purpose NMOS, PMOS 16-HSOP
- Driver Type: Dual Gate Driver (Half-bridge)
- IC Package Type: SOIC, Other
- Operating Temperature: -40 to 150 C
- Output Configuration: Inverting
-
Supplier: Quarktwin Technology Ltd.
Description: Half Bridge Driver DC Motors, General Purpose NMOS, PMOS, Power MOSFET 8-SOIC
- Driver Type: Dual Gate Driver (Half-bridge)
- IC Package Type: SOIC, Other
- Operating Temperature: -40 to 125 C
- Output Configuration: Inverting
-
Supplier: Quarktwin Technology Ltd.
Description: Half Bridge Driver General Purpose NMOS, PMOS, Power MOSFET 8-SOIC
- Driver Type: Dual Gate Driver (Half-bridge)
- IC Package Type: SOIC, Other
- Operating Temperature: -40 to 125 C
- Output Configuration: Inverting
-
Supplier: Quarktwin Technology Ltd.
Description: Half Bridge (2) Driver General Purpose PMOS PowerSSO-24
- Driver Type: Dual Gate Driver (Half-bridge)
- IC Package Type: SOP, Other
- Operating Temperature: -40 to 150 C
- Output Configuration: Inverting
-
Supplier: DigiKey
Description: Half Bridge (2) Driver General Purpose PMOS PowerSSO-24
- IC Package Type: Other
- Operating Temperature: -40 to 150 C
- Packing Method: Tape Reel
- Supply Voltage: 4.5 to 5.5 volts
-
Supplier: DigiKey
Description: Half Bridge (2) Driver General Purpose PMOS PowerSSO-36 EPD
- IC Package Type: Other
- Operating Temperature: -40 to 150 C
- Packing Method: Tape Reel
- Supply Voltage: 4.5 to 5.5 volts
-
Supplier: DigiKey
Description: Half Bridge Driver General Purpose NMOS, PMOS, Power MOSFET 8-SOIC
- IC Package Type: SOIC, Other
- Operating Temperature: -40 to 125 C
- Packing Method: Tube
- Supply Voltage: 8 to 16 volts
-
Supplier: DigiKey
Description: Half Bridge Driver DC Motors, General Purpose NMOS, PMOS, Power MOSFET 8-SOIC
- IC Package Type: SOIC, Other
- Operating Temperature: -40 to 125 C
- Packing Method: Tube
- Supply Voltage: 8 to 16 volts
-
Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 1051446-L9959T-TR-D Applications: General Purpose Technology: PMOS Fault Protection: Over Temperature, Short Circuit Voltage - Load: 5 V to 28 V Load Type: Inductive, Capacitive, Resistive Categories: Integrated
- Operating Temperature: -40 to 150 C
- Supply Voltage: 4.5 to 5.5 volts
-
Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 1051445-L9959S-TR-D Applications: General Purpose Technology: PMOS Fault Protection: Over Temperature, Short Circuit Voltage - Load: 5 V to 28 V Load Type: Inductive, Capacitive, Resistive Categories: Integrated
- Operating Temperature: -40 to 150 C
- Supply Voltage: 4.5 to 5.5 volts
-
Supplier: ROHM Semiconductor USA, LLC
Description: BD67929EFV is a 3-phase brushless motor driver for polygon mirror motors of direct PWM drive type built-in PLL ensuring. As for its basic function, it is a 3-phase 120°energization direct PWM drive type with power supply rated voltage of 36V and rated output current 2.3A. It is useful for
- Driver Type: Three-phase
- IC Package Type: Other
- Operating Temperature: -25 to 85 C
- Packing Method: Tape Reel
-
Supplier: Infineon Technologies AG
Description: Hz with spread spectrum modulator Synchronization with external clock source from 100 kHz to 500 kHz and 2.2 MHz Wide input voltage range from 4.5 V to 60 V Analog and PWM dimming feature (embedded or external) to adjust average LED current Integrated PMOS gate
- Features: RoHS Compliant
- Form Factor: Integrated Circuit (IC)
-
Supplier: ROHM Semiconductor USA, LLC
Description: BD67929EFV is a 3-phase brushless motor driver for polygon mirror motors of direct PWM drive type built-in PLL ensuring. As for its basic function, it is a 3-phase 120°energization direct PWM drive type with power supply rated voltage of 36V and rated output current 2.3A. It is useful for
- Driver Type: Three-phase
- IC Package Type: Other
- Operating Temperature: -25 to 85 C
- Packing Method: Tape Reel
-
Supplier: Infineon Technologies AG
Description: Integrated PMOS gate drivers for PWM dimming and output disconnection Channels in phase opposition Automotive qualified Benefits Reduced EMI emissions Reliable protections with high-side load disconnection using a PMOS 2
- Features: RoHS Compliant
- Form Factor: Integrated Circuit (IC)
-
Supplier: Infineon Technologies AG
Description: stable operation and enable system optimization. Summary of Features Integrated PMOS and NMOS complementary output bridge with 2.5 A current capability Integrated gate drivers Single control input with an integrated dead-time logic allows for optimized control
- IC Package Type: Other
- Operating Temperature: -40 to 150 C
Find Suppliers by Category Top
More Information Top
-
Multi-voltage CMOS Circuit Design
Values are normalized to those of an SD carry generator circuit with the same-size transistors (KPR of 2.2 .
-
Technological Innovation for the Internet of Things
The starting point for this circuit was the PMOS gate driver described in [10] and depicted in the box of Fig. 3(a).
-
http://dspace.mit.edu/bitstream/handle/1721.1/60149/681408033-MIT.pdf?sequence=2
Cascading multiple such stages and scaling them helps us to have a PMOS gate driver .
-
A signal-swing suppressing strategy for power and layout area savings using time-multiplexed differential data-transfer scheme
V,,) is complementary as shown in Fig. 10(b) and (c), that is, PMOS gate drivers and NMOS gate receivers are used for the upper bus pairs, whose each operating bus potential is higher than .
-
An asymptotically zero power charge-recycling bus architecture for battery-operated ultrahigh data rate ULSI's
… i +1 for the lower The relation between the gate types of the driver and receiver in the upper and lower circuits is complementary as shown in Figs. 12(a) and 13(a), that is, PMOS gate drivers and NMOS gate reciver …
-
P‐19: A New Small Sized Integrated Scan & Emission Driver for Compact AMOLED Displays
[7] K. H. Chung, et al., “Integrated PMOS gate driver for a 3D AMOLED display,” SID, pp. 349-352, (2011 .
-
54.4: 4.1 inch Top‐Emission AMOLED on Flexible Metal Foil
The integrated PMOS gate drivers are made on the SS foil.
-
11.4: Transparent AMOLED Display Based on Bottom Emission Structure
The TFT substrate has qFHD (960X540) resolution with an integrated PMOS gate driver and a 6Tr/1Cap circuit to compensate the driving TFT’s threshold voltage.
-
Improved breakdown-voltage complementary MOSFET in a 0.18µm standard CMOS process for switch mode power supply (SMPS) applications
And PMOS gate driver and controller circuits including voltage level-shifters, voltage clampers or the AC-coupled topology should be designed carefully because of its high gate input voltage and limited gate oxide breakdown voltage.
-
A 660MHz ZVS DC-DC converter using gate-driver charge-recycling in 0.18μm CMOS with an Integrated Output Filter
The main contribution of this work is the use of charge recycling, where excess charge from operating the PMOS gate drivers is delivered as energy to the load.
Indicates content that may require registration and/or purchase.