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Supplier: GasLab
Description: Humidity Range: 0~95% RH non-condensing Storage temperature: -4°F to 140°F (-20°C to 60°C) Sensor Life Expectancy: 10+ years Electrical Power Supply: 110-240 VAC UL & CE Wall Adapter 12~32 VDC @ 2A hard-wired power option 6 VDC battery backup connections Relays: Peak Current <
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Supplier: Teledyne DALSA
Description: high-performance dynamic detectors, based on our innovative radiation-hard IGZO sensor technology. The Rad-Xcam detectors are designed to address the demanding needs of dynamic industrial applications like industrial x-ray or computed tomography, while providing compelling
- Computer Interface: Computer
- Detector Style: Fixed Installation
- Types of Ionizing Radiation Detected: X-Ray
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Supplier: GasLab
Description: mount the sensor unit and remote display (all cables and hardware included), plug into a standard wall outlet, and the alarm is ready to protect you and your staff from potential oxygen deficiency 24/7. Add-On Options RAD-0022: Add-on Remote Display for RAD-0002 Oxygen Depletion
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Supplier: Stellar Technology
Description: mission. Each ST1300 pressure transducer incorporates electronic components that have been qualified by DSCC to be “Rad Hard” and compliant to the Grade 1 requirements of EEE-INST-002, thus improving reliability for these transducers when exposed to radiation in high earth orbit.
- Working Pressure Range: 0 to 10,000 psi
- Operating Temperature: -100 to 300 F
- Measurement Type: Absolute, Gauge, Sealed
- Signal Output: Analog Voltage
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Supplier: Infineon Technologies AG
Description: V operating voltage range Low operating current (10 mA max) –55°C to +125°C military temperature grade 16-pin ceramic SOP (CSOP) DLAM QML-V qualified SMD 5962-18216, 2Mb rad hard, SPI, F-RAM (CYRS15B102Q) Radiation performance TID: > 150 Krad (Si) SEL: > 114 MeV.cm2/mg [LET] @
- Density: 2,000 kbits
- Operating Temperature: -55 to 125 C
- Supply Voltage: 3.6 V
- Features: Other
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Supplier: Infineon Technologies AG
Description: (10 mA max) –55°C to +125°C military temperature grade 16-pin ceramic SOP (CSOP) DLAM QML-V qualified SMD 5962-18216, 2Mb rad hard, SPI, F-RAM (CYRS15B102Q) Radiation performance TID: > 150 Krad (Si) SEL: > 114 MeV.cm2/mg [LET] @ 115°C SEU: IMMUNE SEFI: < 1.34 x 10-4 err/dev.day
- Density: 2,000 kbits
- Operating Temperature: -55 to 125 C
- Supply Voltage: 3.6 V
- Features: Other
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Description: contiguous uniform pixel structure where the total sensor is active with virtually no opaque areas which facilitate interpixel interpolation for subpixel edge definition Color Charge Injection Device (CID) Radiation Hardened Imager 3 x 106 Rad Total Dose (gamma) Excellent image at 1 x
- Horizontal Resolution: 730 lines
- Maximum Frame Rate: 30 fps
- Sensitivity: 20 Lux
- Operating Temperature: 32 to 122 F
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The detector control unit: an ASIC for the monitoring of the CMS silicon tracker
Index Terms—A/D converter, ASIC, electronics for high-energy physics experiments, rad hard technologies, temperature sensor , VLSI device.
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http://waset.org/publications/2142/the-data-processing-electronics-of-the-metis-coronagraph-aboard-the-esa-solar-orbiter-mission
… procedure ending in the Stand-by mode (courtesy of Thales Alenia Space Italia) The HKs & MM board is equipped with a dedicated rad - hard FPGA to perform autonomously HKs collection coming from temperature , current and voltage sensors distributed inside the overall …
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The processing and power unit of the METIS coronagraph aboard the Solar Orbiter space mission
The HKs & MM board is equipped with a dedicated rad - hard FPGA to perform autonomously digital and analog HKs collection from temperature , current and voltage sensors distributed inside the overall MPPU unit and subsystems.
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COTS-Based Wireless Magnetic Sensor for Small Satellites
The whole system installed in NANOSAT-01 is formed by two biaxial sensors with two redundant PCBs (printed circuit boards) of RAD - HARD proximity electronics, which conditions the AMR output signal, measure the temperature , and resets the AMR.
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Compensation-circuit to improve radiation-hardness in GaAs digital-circuits, based on X-ray studies
His current research inter- ests include low power VLSI design (digital and analog/mixed- signal); VLSI device modeling; smart sensors and ASIC inter- face electronics; RF microelectronics; CMOS-MEMS integra- tion; Rad - hard GaAs and CMOS integrated circuits; and low- temperature electronics.
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The Solar Mass Ejection Imager and Its Heliospheric Imaging Legacy
The issues of radiation degradation of CCDs, particularly if their operating temperatures are not sufficiently low, can be avoided by use of Active Pixel Sensors (APS) that can be fab- ricated using an inherently “ rad - hard ” technology.
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A modified g m /I D design methodology for deeply scaled CMOS technologies
He is currently involved in the research and development of SOI MOS devices, digital and analog circuits as well as sensors and MEMS, for special applications, more … … speed, low-voltage low-power, microwave, rad - hard and high- temperature electronics and microsystems.
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Fully integrated blue/UV SOI CMOS photosensor for biomedical and environmental applications
He is currently involved in the research and development of SOI MOS devices, digital and analog circuits, as well as sensors and MEMS, for special applications, more … … speed, low- voltage low-power, microwave, rad - hard and high- temperature elec- tronics and microsystems.
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Implementation of the symmetric doped double‐gate MOSFET model in Verilog‐A for circuit simulation
He is involved in the research and development of SOI MOS devices, digital and analog circuits, as well as sensors and MEMS, for special applications, more specifically high-speed, low-voltage low-power, microwave, rad - hard and high- temperature electronics and microsystems.
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Miniaturized Wireless Sensing System for Real-Time Breath Activity Recording
He is involved in the research and development of SOI MOS devices, digital and analog circuits, as well as sensors and MEMS, for special applications, more specifically high-speed, low-voltage low-power, microwave, rad - hard and high- temperature electronics and microsystems.