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Supplier: Broadcom Inc.
Description: The HSMS-281x family are General purpose, low flicker (1/f) noise schottky diodes.VBR=20 V, CT=1.2pF, RD=15 Ohms, Vf @ 1 mA=410 mV
- Diode Applications: Other
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 1 mA
- IR: 2.00E-4 mA
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Supplier: Broadcom Inc.
Description: The HSMS-281x family are General purpose, low flicker (1/f) noise schottky diodes.VBR=20 V, CT=1.2pF, RD=15 Ohms, Vf @ 1 mA=410 mV
- Diode Applications: Other
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 1 mA
- IR: 2.00E-4 mA
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Supplier: Broadcom Inc.
Description: The HSMS-281x family are General purpose, low flicker (1/f) noise schottky diodes.VBR=20 V, CT=1.2pF, RD=15 Ohms, Vf @ 1 mA=410 mV
- Diode Applications: Other
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 1 mA
- IR: 2.00E-4 mA
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Supplier: Broadcom Inc.
Description: The HSMS-281x family are General purpose, low flicker (1/f) noise schottky diodes.VBR=20 V, CT=1.2pF, RD=15 Ohms, Vf @ 1 mA=410 mV
- Diode Applications: Other
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 1 mA
- IR: 2.00E-4 mA
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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor for low voltage / low current applications Summary of Features Ideal for VCO modules and low noise amplifiers Low noise figure: 1.1 dB at 1.8 GHz SMD leadless package Excellent ESD performance typical value 1500V (HBM
- Package Type: Other
- Packing Method: Tape Reel, Other
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Description: SI NOISE HERMETIC MICROSTRIP
- Diode Type: RF Diodes
- Tj: -55 to 150 C
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Supplier: Acme Chip Technology Co., Limited
Description: SI NOISE HERMETIC STUD
- Diode Type: RF Diodes
- Tj: -55 to 150 C
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Supplier: Acme Chip Technology Co., Limited
Description: SI NOISE HERMETIC PILL
- Diode Type: RF Diodes
- Tj: -55 to 150 C
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Description: SI NOISE NON HERMETIC CHIP
- Diode Type: RF Diodes
- Tj: -55 to 150 C
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Supplier: Marki Microwave LLC
Description: The ADM-8625PC is a high-linearity low noise amplifier capable of providing 18 dB gain, 1.4 dB noise figure and +29 dBm OIP3 from 750 MHz to 8 GHz. The ADM-8625PC can serve either as a linear signal amplifier, or as a saturated driver amplifier for H- or S-diode mixers. The
- Amplifier Type: Low Noise Amplifier, Other
- Frequency Range: 750 to 8000 MHz
- Package Type: Connectorized, Other
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Description: SI NOISE NON HERMETIC EPSM SMT
- Diode Type: RF Diodes
- Tj: -55 to 150 C
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Supplier: Infineon Technologies AG
Description: The BFP843F is a robust low noise broadband pre-matched hetero-junction bipolar transistor (HBT). Summary of Features Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5kV HBM ESD hardness High transition frequency f
- Package Type: Other
- Packing Method: Tape Reel, Other
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Supplier: Richardson RFPD
Description: Single Diode Configuration: The diodes have low noise figure through 26 GHz. Low Barrier diodes for minimum LO drive. Stripline and microstrip mixers from 100 MHz Upconverters.
- Diode Type: Schottky Barrier Diodes, RF Diodes
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Supplier: Richardson RFPD
Description: The SMPA1345-040LF plastic-packaged, surface-mountable PIN diode is designed for high-volume low-noise block (LNB), wireless local area network (WLAN), and switch applications from 10 MHz to 6 GHz. The short carrier lifetime of 100 ns (typical), combined with the thin I-region width of
- Diode Type: PIN Diodes, RF Diodes
- VR: 50 volts
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Supplier: Richardson RFPD
Description: The UMX9989AP is the first MRI switching diode module, designed to optimize performance and reduce assembly labor, cost, and polarity errors. There are two principle applications for which the UMX9989AP modules are intended: 1) MRI receiver protection from high RF energy fields,
- Diode Type: PIN Diodes, RF Diodes
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Supplier: Richardson RFPD
Description: Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in ultra- low phase and 1/f noise. The diodes are available in a variety
- Diode Type: RF Diodes, Gunn Diodes
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Supplier: Infineon Technologies AG
Description: CY7C65213-32LTXI | EZ-USB™ Serial Bridge Controller IRFH6200 | N-Channel Power MOSFET BFR460L3 | Low Noise RF Transistors IRF7342 | P-Channel Power MOSFET BSO150N03MD G | N-Channel Power MOSFET S25FL064LABMFI013
- Diode Type: RF Diodes
- IF: 20 mA
- RoHS Compliant: Yes
- VR: 16 volts
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Supplier: Infineon Technologies AG
Description: This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-099R a suitable choice for mixer functions in applications which
- Diode Applications: Detector, Mixer
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 110 mA
- RoHS Compliant: Yes
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Supplier: Marki Microwave LLC
Description: The APM-7098 is a broadband distributed, low phase noise LO driver amplifier designed to provide a saturated +23 dBm output power with low DC power consumption. This amplifier uses GaAs HBT technology for low phase noise, and is optimized to provide enough power to drive the LO port of
- Amplifier Type: Other
- Frequency Range: 100 to 22000 MHz
- Package Type: Other
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Supplier: Marki Microwave LLC
Description: The APM-7098 is a broadband distributed, low phase noise LO driver amplifier designed to provide a saturated +23 dBm output power with low DC power consumption. This amplifier uses GaAs HBT technology for low phase noise, and is optimized to provide enough power to drive the LO port of
- Amplifier Type: Other
- Frequency Range: 100 to 22000 MHz
- Package Type: Connectorized, Other
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Supplier: Marki Microwave LLC
Description: The APM-7516 is a robust broadband distributed, low phase noise LO driver amplifier designed to provide greater than +20 dBm output power with excellent return losses and high input power handling. This amplifier uses GaAs HBT technology for low phase noise and is optimized to provide
- Amplifier Type: Other
- Frequency Range: 1000 to 22000 MHz
- Package Type: Other
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Supplier: RS Components, Ltd.
Description: Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 6000 MHz
- Maximum Gain: 13 dB
- Minimum Gain: 13 dB
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Supplier: RS Components, Ltd.
Description: Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 10000 MHz
- Maximum Gain: 19.5 dB
- Minimum Gain: 19.5 dB
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Supplier: RS Components, Ltd.
Description: Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 14000 MHz
- Maximum Gain: 17 dB
- Minimum Gain: 17 dB
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Supplier: RS Components, Ltd.
Description: Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 18000 MHz
- Maximum Gain: 20.5 dB
- Minimum Gain: 20.5 dB
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Supplier: ValueTronics International, Inc.
Description: pulsed RF signals, noise-like signals, and pseudorandom signals.. Additional Features: Frequency range: 10 kHz to 40 GHz, sensor dependent Over 200 readings per second in single channel mode GPIB or optional RS232 interfaces Automatic download of
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Supplier: ValueTronics International, Inc.
Description: The NRVZ55 is a used 40 GHz 0.3 Watts RF Sensor from Rohde & Schwarz. Electronic test equipment sensors measure the power of waveforms, such as multi-tone and modulated radiofrequency (RF) waveforms. Sensors gather highly accurate modulation measurements using diode detectors
- Frequency Range: 40000 MHz
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Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Win Source Part Number: 036692-ZAMP002H6TA Packaging: Reel - TR Test Frequency: 950MHz Frequency: 800MHz to 2.5GHz Gain: 21dB to 22dB Noise Figure: 6dB P1dB: 7dBm (5mW) RF Type: DBS, Set Top Box, SMR, General Purpose
- Applications: Terrestrial RF/Microwave Systems
- Frequency Range: 800 to 2500 MHz
- Maximum Gain: 21 to 22 dB
- Minimum Gain: 21 to 22 dB
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Supplier: Skyworks Solutions, Inc.
Description: The SMPA1345-040LF plastic-packaged, surface-mountable PIN diode is designed for high-volume low-noise block (LNB), wireless local area network (WLAN), and switch applications from 10 MHz to 6 GHz. The short carrier lifetime of 100 ns (typical), combined with the thin I-region width of
- Diode Type: PIN Diodes
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Supplier: Microwave Photonic Systems, Inc.
Description: RF carrier's data modulation format. The links have low noise and high dynamic range characteristics, a wide operating temperature range and provide turnkey installation. The system provides status monitoring through the use of an onboard processor that communicates with a host
- Bandwidth: 2500 MHz
- Cable Type: Single Mode
- Light Source: Laser Diode
- Maximum Optical Output Power: 3 dBm
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Supplier: Microwave Photonic Systems, Inc.
Description: The MP-6000TX is a RF/ Fiber optic Transmitter designed for antenna remoting and broadband RF transmission applications using singlemode fiber optic cable. The transmitter uses a high efficiency Distributed Feedback (DFB) laser diode with an operating wavelength of 1550 nm that
- Cable Type: Single Mode
- Connector Type: FC, SC, Other
- Light Source: Laser Diode
- Maximum Optical Output Power: 5 dBm
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Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Win Source Part Number: 201164-BFQ31ATA Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 600MHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 6dB @ 60MHz Categories: Discrete Semiconductor Products Status
- Noise Figure: 6 dB
- Operating Frequency: 600 MHz
- Package Type: SOT3, SOT23, Other
- Packing Method: Tape Reel, Other
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Supplier: KRYTAR, Inc.
Description: performance, leveling pulsed signal sources, AM noise measurements, system monitoring and pulsed RF measurements in ultra-broadband and mm-Wave applications. Features: 0.1 GHz - 18.5 GHz Frequency Range Hermetically Sealed for High Reliability Low Threshold Variation & VSWR
- Connector Type: SMA
- Frequency Range: 500 to 18500 MHz
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Supplier: Crane Aerospace & Electronics
Description: Dividers, Couplers, Hybrids, Modulators, Beamformers, Phase Shifters and Antenna Elements Low noise RF and Microwave sources VCOs, DROs, Synthesizers, Crystal Oscillators and complex Oscillator and Multiplier Assemblies Frequency conversion products Up and Down
- Frequency Band: 10 to 26500 MHz
- Input VSWR: 2 :1
- Limiter Type: Conventional Limiter
- Package Type: Connectorized
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kTB Noise Diodes kTB noise diodes offer a symmetrical white Gaussian noise voltage distribution while maintaining a flat power spectral density versus frequency response (read more)
Browse Diodes Datasheets for kTB Solutions -
-040LF. Applications Sensitive RF and microwave detector circuits Sampling and mixer circuits High-volume wireless Wi-Fi and mobile Low-noise receivers in high-sensitivity ID tags Radio designs (read more)
Browse Diodes Datasheets for Skyworks Solutions, Inc. -
regulators are used: DSLR camera image sensors Thermal camera infrared sensors Automotive ADAS radar and RF circuitry Endoscope low noise power supply Automatic test (read more)
Browse General Purpose Diodes Datasheets for ODG (Origin Data Global) -
up to 18GHz. The higher-power modules are designed for secure communication and signal jamming, while the low-power modules with a high crest factor are used for signal impairment in BER and jitter applications. Each module contains a hermetically packaged noise diode that has been (read more)
Browse Noise Generators and Sources Datasheets for kTB Solutions -
noise diode that has been pre-selected for special performance characteristics. The standard module is designed for a 50 Ω load impedance. General Specifications Operating temperature -40 °C to +100 °C (read more)
Browse Noise Generators and Sources Datasheets for kTB Solutions -
limitations 99 dBa @ 10' on axis (109 dBa @ 1m on axis) Four wire terminal block and supervisory diode (read more)
Browse Audible Alarms Datasheets for Federal Signal Corporation - Industrial Signaling and Systems -
Federal Signal Corporation - Industrial Signaling and Systems
Are duty cycles burning out your audible horns?
450E is ideal for general alarm, start and dismissal, coded paging, and process control signaling in areas of high ambient noise levels. Additionally, the 4-wire terminal block and supervisory diode design also makes this unit ideal for Fire Alarm Applications. Model 450E produces 99dBA @ 10 (read more)
Browse Audible Alarms Datasheets for Federal Signal Corporation - Industrial Signaling and Systems -
Characteristics of Thermocouple Power Monitors Introduction Thermocouple RF power monitors are widely used for accurate measurement of RF power in demanding applications. Unlike other sensor technologies that require correction factors or (read more)
Browse RF Power Detectors Datasheets for LadyBug Technologies LLC
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Space Operations: Mission Management, Technologies, and Current Applications > ESA Deep Space Antenna 2 Pointing Calibration System
A remote access capability is also provided to allow the same user interface from a remote workstation over LAN or wide area network (WAN). 3) Radiometer and its associated RF noise diodes .
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Comparison of GaAs/AlGaAs quantum-well IR detectors fabricated on GaAs and Si substrates
This power was calibrated by replacing the MQW detector with an rf noise diode and modulating it at the same frequency with a square wave having an amplitude .
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Millimeter Wave Cloud Radar (MMCR) Handbook
RF noise diode .
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The ACTS propagation campaign
Calibration is performed automatically a t frequent intervals by switching a low loss coaxial switch ahead of the mixer to the RF noise diode in series with an attenuator.
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Automatic Millimeter Wave Mixer Noise Figure Measurements
Changes ?, Enter # or 0 for Exit Mixer I.D. # Chopper frequency Hot load temperature Cold load temperature IF gain IF bandwidth IF noise figure RF losses Noise diode ENR Video amp gain Square law detector factor = 6/183/3/3 = 25.0 Hz …
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Solid-state RF noise source
Severalyears ago atM.I.T. Lincoln Laboratory, it was observed by the writer that a step-recovery diode generated RF noise at Sband when re- verse-biased and driven by a VHF CW signal.
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Practical Electronics for Inventors, Third Edition > Semiconductors
One side effect that occurs in avalanche diodes is RF noise generation.
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CR4 - Thread: PIN Diode Switch in a Frequency Multiplier Circuit
Pathfinder Tags: electrical frequency multiplier noise pin diode RF spectral switch .
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Front cover and table of contents
Steprecovery diodes ; RF noise generation. Yakutis,A .
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Author Index, Jun. 1981
of diode noise under RF and dc excitations (Short .