RF Noise Diodes

Description: The HSMS-281x family are General purpose, low flicker (1/f) noise schottky diodes.VBR=20 V, CT=1.2pF, RD=15 Ohms, Vf @ 1 mA=410 mV

• V_F: 0.4 volts
• I_F: 1 mA
• VR: 15 volts
• I_R: 0.0002 mA

Description: Power MOSFET BBY55-02V | RF tuning diode CY7C65213-32LTXI | EZ-USB™ Serial Bridge Controller IRFH6200 | N-Channel Power MOSFET BBY55-02V | RF tuning diode CY7C65213-32LTXI | EZ-USB™ Serial Bridge Controller IRFH6200 | N-Channel Power MOSFET

• Features: Other
• Packing Method: Tape Reel

Description: built-in isolator provides almost constant output impedance as the noise source bias is switched on and off. The isolator also protects the noise diode from incident RF power (consult the factory for higherpower units). An SMA female connector is standard for the

• Form Factor: Coaxial
• Device Type: Noise Source

Description: The BFP843F is a robust low noise broadband pre-matched hetero-junction bipolar transistor (HBT). Summary of Features Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5kV HBM ESD hardness High transition frequency fT = 60 GHz to

• Features: Other
• Packing Method: Tape Reel

Description: Silicon Tuning Diodes Summary of Features Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread Pb-free (RoHS compliant) package Applications

• I_F: 20 mA
• VR: 16 volts
• Features: Other, Single
• Diode Type: RF Diodes

Description: SI NOISE HERMETIC STUD

• T_j: -55 to 150 C
• Features: Other
• Diode Type: RF Diodes

Description: Single Diode Configuration: The diodes have low noise figure through 26 GHz. Low Barrier diodes for minimum LO drive. Stripline and microstrip mixers from 100 MHz Upconverters.

• Operating Frequency: 0 to 16,000 MHz
• C_T: 0.32 pF
• Features: Other, Single
• Diode Type: RF Diodes, Schottky Barrier Diodes

Description: The UMX9989AP is the first MRI switching diode module, designed to optimize performance and reduce assembly labor, cost, and polarity errors. There are two principle applications for which the UMX9989AP modules are intended: 1) MRI receiver protection from high RF energy fields,

• Features: Other, Single
• Diode Type: PIN Diodes, RF Diodes

Description: SI NOISE NON HERMETIC CHIP

• T_j: -55 to 150 C
• Features: Other
• Diode Type: RF Diodes

Description: Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in ultra- low phase and 1/f noise. The diodes are available in a variety

• Operating Frequency: 9,500 to 35,500 MHz
• Diode Type: Gunn Diodes, RF Diodes
• Features: Other

Description: The SMV1263 series of silicon hyperabrupt junction varactor diodes are designed for 3 V platforms. The high capacitance ratio and low reverse voltage of these varactors make them attractive for low phase noise Voltage Controlled Oscillators (VCOs) in wire

• C_Dmin/C_Dmax: 2.5
• Features: Other
• Diode Type: RF Diodes, Varactor Diodes

Description: kTB Noise Diodes kTB noise diodes offer a symmetrical white Gaussian noise voltage distribution while maintaining a flat power spectral density versus frequency response. Our diodes are available in a variety of specifications and packages, with the

• Features: Other

Description: This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-04R a suitable choice for mixer and detector functions in

• V_F: 0.25 volts
• I_F: 110 mA
• VR: 4 volts
• Diode Applications: Detector, Mixer

Description: The ADM-8625PC is a high-linearity low noise amplifier capable of providing 18 dB gain, 1.4 dB noise figure and +29 dBm OIP3 from 750 MHz to 8 GHz. The ADM-8625PC can serve either as a linear signal amplifier, or as a saturated driver amplifier for H- or S-diode mixers. The

• Frequency Range: 750 to 8,000 MHz
• Package Type: Connectorized
• Amplifier Type: Low Noise Amplifier
• Features: Other

Description: The APM-6849 is a single stage broadband, low phase noise LO driver amplifier designed to provide saturated +21 dBm output power. This amplifier uses GaAs HBT technology for low phase noise, and provides industry leading -170 dBc/Hz at 10 kHz offset from carrier frequency. The

• Frequency Range: 2,000 to 30,000 MHz
• Features: Other

Description: The APM-7516 is a robust broadband distributed, low phase noise LO driver amplifier designed to provide greater than +20 dBm output power with excellent return losses and high input power handling. This amplifier uses GaAs HBT technology for low phase noise and is optimized to provide

• Frequency Range: 1,000 to 22,000 MHz
• Package Type: Connectorized
• Features: Other

Description: UHF Schottky Diode Low Noise SOT-23

• Features: Other, SOT23, Schottky
• Diode Applications: Rectifier Diode, Switching
• RoHS Compliant: RoHS Compliant
• Diode Type: Schottky Barrier Diodes

Description: comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Schottky, 7V. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 7V, Diode and Rectifier, RF

• T_j: -55 C
• Features: Other
• Diode Applications: Rectifier Diode
• Diode Type: Schottky Barrier Diodes

Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include diode, rectifier, Schottky, switching diode, Diode and

• T_j: -55 to 150 C
• Features: Other
• Diode Applications: Rectifier Diode
• RoHS Compliant: RoHS Compliant

Description: The NRVZ55 is a used 40 GHz 0.3 Watts RF Sensor from Rohde & Schwarz. Electronic test equipment sensors measure the power of waveforms, such as multi-tone and modulated radiofrequency (RF) waveforms. Sensors gather highly accurate modulation measurements using diode detectors.

• Frequency Range: 40,000 MHz

Description: The 5232 is a used Dual Channel RF Power Meter from Boonton. Radio frequency (RF) power meters are the electronic test equipment of choice to collect information, analyze RF power, and display information in an easy-to-read digital format. Engineers use RF power meters to

Description: The SMV2020-079LF is silicon hyperabrupt junction varactor diode. The low capacitance range and High Q of this varactor makes it attractive for high frequency and low phase noise VCOs in wireless systems. SMV2020 Series includes SMV2020-079LF.

• VR: 22 volts
• C_T: 2.25 pF
• Features: Other
• Diode Type: Varactor Diodes

Description: (nominal) results in a fast speed RF switching PIN diode. The RF performance of the SMPA1345-040LF is assured by virtue of the very low capacitance (0.15 pF) and low resistance (1.5 Ω at 10 mA).

• Diode Type: PIN Diodes

Description: The OFW-2320TRX RF Fiber Optic Transceiver is the principle hardware for long-haul transmission of RF signals in the frequency range of 100 MHz to 2500 MHz over singlemode fiber optic cable. The OFW-2320TRX is designed to provide full duplex signal transmission between an antenna

• Wavelength: 1,310 to 1,550 nm
• Bandwidth: 2,500 MHz
• Maximum Optical Output Power: 3.000000000000001 dBm
• Light Source: Laser Diode

Description: Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low

• Diode Type: Schottky Barrier Diodes

Description: The SMV2201-SMV2205 series are silicon hyperabrupt junction varactor diodes specifically designed for wide bandwidth, low-loss applications. The specified high capacitance ratio and low reverse voltage make these varactors appropriate for low phase noise Voltage Controlled Oscillators

• VR: 22 volts
• Features: Other
• Diode Type: Varactor Diodes

Description: Manufacturer: Diodes Incorporated Win Source Part Number: 036692-ZAMP002H6TA Packaging: Reel - TR Test Frequency: 950MHz Frequency: 800MHz to 2.5GHz Gain: 21dB to 22dB Noise Figure: 6dB P1dB: 7dBm (5mW) RF Type: DBS, Set Top Box, SMR, General Purpose Categories: RF/IF and

• Frequency Range: 800 to 2,500 MHz
• Minimum Gain: 21 to 22 dB
• Maximum Gain: 21 to 22 dB
• Noise Figure: 6 dB

Description: engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Schottky, 12 GHz. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 12 GHz,

• Diode Applications: Rectifier Diode
• Diode Type: Schottky Barrier Diodes

Description: Manufacturer: Diodes Incorporated Win Source Part Number: 036691-ZAMP001H6TA Packaging: Reel - TR Test Frequency: 950MHz Frequency: 800MHz to 2.5GHz Gain: 17dB to 18dB Noise Figure: 5dB P1dB: -6dBm (0.3mW) to -2dBm (0.6mW) RF Type: DBS, Set Top Box, SMR, General Purpose

• Frequency Range: 800 to 2,500 MHz
• Minimum Gain: 17 to 18 dB
• Maximum Gain: 17 to 18 dB
• Noise Figure: 5 dB

Description: The MP-5000TX is a RF/fiber optic Transmitter designed for antenna remoting and broadband RF transmission applications using singlemode fiber optic cable.The transmitter uses a high efficiency Distributed Feedback(DFB) laser diode with an operating wavelength selected from the

• Maximum Optical Output Power: 3.000000000000001 dBm
• Operating Temperature: -40 to 185 F
• Connector Type: FC, SC
• Light Source: Laser Diode

Description: KRYTAR Broadband Planar Tunnel Diode Detectors are specifically designed for use in today’s high-performance microwave instrumentation and systems. KRYTAR detectors are designed for such applications as power measurements, analyzing radar performance, leveling pulsed signal sources, AM

• Frequency Range: 500 to 18,500 MHz

Description: KRYTAR Broadband Planar Tunnel Diode Detectors are specifically designed for use in today’s high-performance microwave instrumentation and systems. KRYTAR detectors are designed for such applications as power measurements, analyzing radar performance, leveling pulsed signal sources, AM

• Frequency Range: 100 to 2,000 MHz

Description: Schottky Diode 7V Low Noise

• Features: Other, TO-92
• RoHS Compliant: RoHS Compliant
• Diode Type: Schottky Barrier Diodes

Description: KRYTAR Broadband Planar Tunnel Diode Detectors are specifically designed for use in today’s high-performance microwave instrumentation and systems. KRYTAR detectors are designed for such applications as power measurements, analyzing radar performance, leveling pulsed signal sources, AM

• Frequency Range: 1,000 to 18,000 MHz

Description: wide array of communication applications. The link applications include antenna remoting, time and frequency reference distribution, RF delay lines, telemetry tracking, and point-to-point RF transmission.The transmitter utilizes a low noise, high dynamic range Distributed

• Wavelength: 3,110 to 1,550 nm
• Maximum Optical Output Power: 3.000000000000001 dBm
• Operating Temperature: -40 to 158 F
• Connector Type: FC, SC