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Supplier: Maury Microwave
Description: built-in isolator provides almost constant output impedance as the noise source bias is switched on and off. The isolator also protects the noise diode from incident RF power (consult the factory for higherpower units). An SMA female connector is standard for the
- Form Factor: Coaxial
- Device Type: Noise Source
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Supplier: Microwave Photonic Systems, Inc.
Description: frequency range as indicated in the part number generator tool on page two.The utilization of the MP-2330TX, in conjunction with the appropriate MP-2320RX RF/Fiber Optic Receiver, forms a broadband link capable of supporting the transmission of RF signals over singlemode optical
- Wavelength: 3,110 to 1,550 nm
- Maximum Optical Output Power: 3.000000000000001 dBm
- Operating Temperature: -40 to 158 F
- Connector Type: FC, SC
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Supplier: DigiKey
Description: RF Diode Schottky 4V 25mA SSM
- VR: 4 volts
- Tj: 125 C
- CT: 0.6 pF
- Features: Other, SOT416, Single
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Supplier: Win Source Electronics
Description: Manufacturer: Skyworks Solutions Inc. Win Source Part Number: 029460-SMS3924-079LF Packaging: Reel - TR Current - Max: 50mA Diode Type: Schottky - Single Voltage - Peak Reverse (Max): 70V Power Dissipation (Max): 75mW Categories: Discrete Semiconductor Products Status: Active Temperature
- Tj: 150 C
- PD: 75 milliwatts
- Features: Other, Single
- Diode Type: RF Diodes, Schottky Barrier Diodes
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 096850-BAT1705WH6327XTSA1 Packaging: Reel - TR Current - Max: 130mA Diode Type: Schottky - 1 Pair Common Cathode Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 4V Power Dissipation (Max): 150mW Resistance @ If,
- Tj: 150 C
- PD: 150 milliwatts
- CT: 0.75 pF
- Features: Other
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Supplier: Rochester Electronics
Description: BAT15-04R - Reverse series silicon RF Schottky diode pair
- Features: Other
- Diode Type: RF Diodes, Schottky Barrier Diodes
- RoHS Compliant: RoHS Compliant
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Supplier: RS Components, Ltd.
Description: Infineon RF Diode BAT1707E6327HTSA1
- Pin Count: 4
- Features: Other, SOT143
- Diode Type: RF Diodes, Schottky Barrier Diodes
- Diode Applications: Rectifier Diode
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Supplier: Richardson RFPD
Description: DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips
- Operating Frequency: 12,000 to 18,000 MHz
- CT: 0.15 pF
- Diode Type: RF Diodes, Schottky Barrier Diodes
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1382972-MSS30-B53-E45 Category: Discrete Semiconductor Products>Diodes>RF Diodes Series: MSS30-xxx-x Package: Tray Current - Max: 50 mA Diode Type: Schottky - 1 Bridge Capacitance @ Vr, F: 0.33pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 3V Power
- Tj: -65 to 150 C
- PD: 100 milliwatts
- CT: 0.33 pF
- Features: Other
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Supplier: Infineon Technologies AG
Description: Silicon Schottky Diodes Summary of Features For mixer applications in the VHF / UHF range For high-speed switching applications Pb-free (RoHS compliant) package Potential Applications Wireless Communications Satellite Receivers Base Stations High Speed Data Networks RFID Designers who used
- VF: 0.32 to 0.5 volts
- IF: 130 mA
- VR: 8 volts
- Diode Applications: Detector, Mixer
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 72529-BAT15-02LRH Family Name: BAT15-02LRH Alternative Parts (Cross-Reference): BAT15-02LRHE6327; BAT15-02LRHE6327XT; Introduction Date: January 30, 2003 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is
- Diode Type: RF Diodes, Schottky Barrier Diodes
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Supplier: Richardson RFPD
Description: Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in ultra- low phase and 1/f noise. The diodes are available in a variety
- Operating Frequency: 9,500 to 35,500 MHz
- Diode Type: Gunn Diodes, RF Diodes
- Features: Other
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Supplier: Nexperia B.V.
Description: High performance voltage regulator diodes in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. Features and benefits Very low dynamic impedance at low currents: approximately 5 % of conventional series Hard breakdown knee Low noise: approximately 10 % of
- Diode Type: Avalanche Diodes
- Diode Applications: Detector, Limiter, Power Diode
- Features: Other, SOT23
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Supplier: Hamamatsu Photonics Europe
Description: Low breakdown voltage type MPPC for scintillation detector The S14161 series achieve higher PDE (photon detection efficiency) and lower operation voltage than other MPPC to adapt for PET and radiation monitor application. They achieve small dead space in a photosensitive area with HWB (hole wire
- CT: 900 pF
- Diode Applications: Detector
- Features: Other
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Supplier: Newark, An Avnet Company
Description: RF DIODE, SCHOTTKY, 1PF 15V SOT-323; Diode Configuration:Single; Reverse Voltage:15V; Forward Current:1A; Forward Voltage:340mV; Diode Capacitance:1pF; Diode Case Style:SOT-323; No. of Pins:3 Pin; Product Range:- RoHS Compliant: Yes
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Supplier: ODG (Origin Data Global)
Description: RF DIODE SCHOTTKY 70V 75MW SC79
- Tj: 150 C
- Features: Other, SOD-523
- Diode Type: RF Diodes, Schottky Barrier Diodes
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Supplier: Broadcom Inc.
Description: HSMS-8xxx is a family of low cost microwave Schottky diodes that are specifically designed for use at X/Ku-bands and are ideal for DBS and VSAT down converter applications.VBR=4 V, CT=0.26 pF, RD=14Ohms, Vf @ 1 mA=350 mV
- VF: 0.25 volts
- IF: 1 mA
- Tj: -65 to 150 C
- PD: 75 milliwatts
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Supplier: SemiGen
Description: The SemiGen SZB900 Series of Zero Bias Schottky Detector diodes are designed for use in video detectors and power monitors eliminating the need to provide external DC bias to the diode. The choice of barrier metal and processes provide a broad selection of video impedance. Features:
- VF: 0.3 volts
- Diode Applications: Detector
- Features: Other
- Diode Type: Schottky Barrier Diodes
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Supplier: Utmel Electronic Limited
Description: RF DIODE SCHOTTKY 4V 75MW SOT23
- Tj: 150 C
- PD: 75 milliwatts
- CT: 0.26 pF
- Features: Other, SC-59, SOT23
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Supplier: PUI - Projections Unlimited, Inc.
Description: BZY91 Series Zener Diodes
- Features: Other
- Diode Type: RF Diodes
- Diode Applications: Rectifier Diode
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Supplier: SemiGen
Description: SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly controlled
- VF: 0.55 volts
- Diode Applications: Detector, Mixer, Modulation, Switching
- Features: Other
- Diode Type: Schottky Barrier Diodes
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Supplier: Newark, An Avnet Company
Description: RF DIODE, SCHOTTKY, 1PF 15V, SOT-23; Diode Configuration:Single; Reverse Voltage:15V; Forward Current:1A; Forward Voltage:500mV; Diode Capacitance:1pF; Diode Case Style:SOT-23; No. of Pins:3 Pin; Product Range:- RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: RF Diode Schottky 15V Automotive 3-Pin SC-70 T/R
- VF: 0.7 volts
- IF: 30 mA
- Pin Count: 3
- Features: Other, SOT323
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Supplier: Broadcom Inc.
Description: The HSMS-282x family of schottky diodes are the best all-round choice for most applications. These products featuring low series resistance, low forward voltage at all current levels, and good RF characteristics. Applications include clamping, low frequency mixers, biased detectors,
- VF: 0.34 volts
- IF: 10 mA
- VR: 1 volts
- IR: 0.0001 mA
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Supplier: PUI - Projections Unlimited, Inc.
Description: 3.0 Microampere (µA) Maximum Reverse Current (IR) Surface Mount Zener Diode
- Features: Other
- Diode Type: RF Diodes, Zener Diodes
-
Supplier: Broadcom Inc.
Description: The HSMS-285x zero bias Schottky detector diodes have been designed and optimised for use in small signal (Pin<-20dBm) applications at frequencies below 1.5GHz. They are ideal for RF/ID and RF tag applications where DC bias power is not avialable. Tangential Sensitivity (TSS) =
- VF: 0.15 volts
- IF: 1 mA
- VR: 2 volts
- IR: 0.175 mA
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Supplier: Toshiba America, Inc.
Description: SiC SBDs are ideal for low-loss, high-efficiency power conversion applications such as server power supplies and solar power conditioners. SiC Schottky Barrier Diodes Schottky Barrier Diodes TVS Diodes (ESD Protection Diodes) Rectifier Diodes Switching
- Diode Applications: Protector, Rectifier Diode
- Diode Type: RF Diodes, Schottky Barrier Diodes, Transient Voltage Suppressor Diodes (TVS), Zener Diodes
- Features: Single
-
Supplier: SemiGen
Description: SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly controlled
- VF: 395 volts
- Diode Applications: Detector, Mixer, Modulation, Switching
- Diode Type: Schottky Barrier Diodes
-
Supplier: Newark, An Avnet Company
Description: RF SCHOTTKY DIODE, 4V, 0.11A, SOT-23; Diode Configuration:Dual Series; Reverse Voltage:4V; Forward Current:110mA; Forward Voltage:300mV; Diode Capacitance:0.25pF; Diode Case Style:SOT-23; No. of Pins:3 Pin; Product Range:- RoHS Compliant: Yes
-
Supplier: Utmel Electronic Limited
Description: Schottky Diodes & Rectifiers RF DIODES
- VF: 0.41 volts
- IF: 110 mA
- VR: 4 volts
- CT: 350 pF
-
Supplier: MACOM
Description: At MACOM we produce a wide variety of Schottky diodes as your best choice for microwave circuit detector and mixer applications ranging from DC to 80 GHz. These devices are available in die form, SURMOUNTTM, flip chip, plastic and ceramic packaging.
- VF: 0.09 to 1,200 volts
- Diode Applications: Detector, Mixer
- Features: Other
- Diode Type: Schottky Barrier Diodes
-
Supplier: PUI - Projections Unlimited, Inc.
Description: SMA Case Surface Mount (SMT) Zener Diodes
- Features: Other
- Diode Type: RF Diodes, Zener Diodes
-
Supplier: Newark, An Avnet Company
Description: RF DIODE, SCHOTTKY, 2PF 70V SOT-323; Diode Configuration:Dual Series; Reverse Voltage:70V; Forward Current:1A; Forward Voltage:1V; Diode Capacitance:2pF; Diode Case Style:SOT-23; No. of Pins:3 Pin; Product Range:- RoHS Compliant: Yes
-
Supplier: Utmel Electronic Limited
Description: DIODE PIN RF PWR LIMITER SOT-23
- Tj: 150 C
- PD: 250 milliwatts
- CT: 0.75 pF
- Diode Type: Current Limiting Diodes, RF Diodes
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up to 18GHz. The higher-power modules are designed for secure communication and signal jamming, while the low-power modules with a high crest factor are used for signal impairment in BER and jitter applications. Each module contains a hermetically packaged noise diode that has been (read more)
Browse Noise Generators and Sources Datasheets for kTB Solutions -
noise diode that has been pre-selected for special performance characteristics. The standard module is designed for a 50 Ω load impedance. General Specifications Operating temperature -40 °C to +100 °C (read more)
Browse Noise Generators and Sources Datasheets for kTB Solutions -
The CSG9K20GA is a metrology-grade signal generator engineered for time-domain critical applications. Delivering a wide -120 to 17 dBm dynamic range, it features a built-in pulse modulator with 100 ns minimum width and fast 50 ns frequency switching (≥100 MHz). With typical phase noise of (read more)
Browse Signal Generators Datasheets for Corech Microwave -
RF Signal Generator Buying Guide Radio Frequency (RF) signal generators are essential tools for professionals working in wireless communications, aerospace, defense, semiconductor testing, and research and (read more)
Browse RF Generators Datasheets for Uni-Trend US -
kTB Noise Diodes kTB noise diodes offer a symmetrical white Gaussian noise voltage distribution while maintaining a flat power spectral density versus frequency response (read more)
Browse Diodes Datasheets for kTB Solutions -
The Anritsu MG362x1A Rubidium Signal Generator delivers exceptionally stable, low-phase-noise signals from 9 kHz to 70 GHz. Featuring rubidium atomic clock technology, it ensures precise frequency accuracy and stability, which is critical for advanced testing environments. The generator boasts (read more)
Browse Signal Generators Datasheets for Anritsu Company -
Corech provides a low phase noise RF signal generator module designed for applications that need compact RF source integration up to 20 GHz. This module format is intended for OEM projects, embedded microwave subsystems (read more)
Browse Signal Generators Datasheets for Corech Microwave -
Corech CSG9K40GA is a wideband RF signal generator designed for engineers who need low phase noise signal generation across a broad microwave range. With frequency coverage from 9 kHz to 40 GHz, it fits laboratory (read more)
Browse Signal Generators Datasheets for Corech Microwave -
Corech Microwave introduces the MSG10M6G, a compact low phase noise signal generator module designed for OEM development, embedded RF subsystems, and automated test environments. It covers 10 MHz to 6 GHz and delivers adjustable output power from 0 to +15 dBm in a space-efficient module format (read more)
Browse Signal Generators Datasheets for Corech Microwave -
Maury offers self-contained Noise Calibration Systems that are highly accurate sources of RF and microwave noise power. These systems are used wherever noise source accuracy is critical. Cryogenic, Thermal (Hot), and Ambient Noise Terminations, Solid State and High Precision Noise Generators (read more)
Browse Datasheets for Maury Microwave
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Cnd6004a Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array, Integrated Circuits and Semiconductors — Product Line
Type » Noise Generator Diodes ; RF .
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RF/Microwave Circuit Design for Wireless Applications 2nd Edition Complete Document
This is ironic, considering that RF noise generators were long based on thermionic diodes operated in saturation (the 5722 noise diode was a popular type, as in the Rohde & Schwarz SKTU).
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RF/Microwave Circuit Design for Wireless Applications Complete Document
This is ironic, considering that RF noise generators were long based on thermionic diodes operated in saturation (the 5722 noise diode was a popular type, as in the Rohde & Schwarz SKTU).
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Multi-watt 589nm fiber laser source
To this end, we first measured the bandwidth of our 938nm diode laser as a function of the RF noise generator power.
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Development of the RF Front-end of a Multi-Channel Microwave Radiometer for Internal Body Temperature Measurements
The Microwave Radiometer architecture Also, a prototype “ RF Reference Noise Generator ” was designed and implemented based on the NC303 noise diode that delivers symmetrical white Gaussian noise and flat output power versus frequency (10MHz – 10GHz).
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Noise in Single-Frequlency Oscillators and Amplifiers
the noise per- formance of nonlinear RF generators , such as IMPATT, BARITT, and Gunn diode oscillators.
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J-Band Transferred-Electron Oscillators
the noise per- formance of nonlinear RF generators , such as IMPATT, BARITT, and Gunn diode oscillators.
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The Parkes radio telescope modified for rapid receiver changes
A circular-waveguideloop coupler, insertedbetween the feed and the input to the LNA Dewar assembly,can be used for calibra- tion purposes, either by noise - diode injection or an RF test tone, derived from the accompanying test-tone generator .
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An Automated LNA/PPA Characterization System
…Analyzer (i.e. Agilent E5730A) * I Spectrum Analyzer (i.e. Agilent E4440A) * I Power Meter + 2 Power Sensors (i.e. Agilent NI911A + N8485A/N8485D) * I NF Meter + Noise Diode (i.e. Agilent N8974A … e. Keithley 2700) * 2 RF Generators (i.e. Agilent E4438C…
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Development of a New High Speed Dual-Channel Impulse Ground Penetrating Radar
The RF front end contains a square wave oscillator designed with current-feedback operational amplifiers, step recovery diode (SRD) pulse generator , RF switches, MMIC (monolithic microwave integrated circuits) power amplifier and LNA (low noise amplifier).