-
Supplier: Toshiba America, Inc.
Description: (Si) SBDs. SiC SBDs are ideal for low-loss, high-efficiency power conversion applications such as server power supplies and solar power conditioners. SiC Schottky Barrier Diodes Schottky Barrier Diodes TVS Diodes (ESD Protection Diodes) Rectifier Diodes
- Configuration: Single
- Diode Type: Schottky Barrier Diodes
-
Supplier: Richardson RFPD
Description: self-biased by the RF transmitter pulse power. A switch driver is not needed for this receiver protection application. Receiver protector diodes appear directly across the input port of the receiver. They are connected in anti-parallel pairs to limit the RF carrier
- Diode Type: PIN Diodes, RF Diodes
- VR: 75 volts
-
Supplier: Richardson RFPD
Description: exceptionally low RC product (0.1ps) and a 2-3 nS switching speed. The chips are fully passivated with silicon nitride and have an added BCB polymer layer for scratch protection. The BCB protective coating prevents damage to the diode junction area and anode air-bridge during handling
- Diode Type: PIN Diodes, RF Diodes
- VR: 45 volts
-
-
Supplier: Richardson RFPD
Description: . It is self-biased by the RF transmitter pulse power. A switch driver is not needed for this receiver protection application. The UMX1089 process has been optimized for lower loss performance. Receiver protection diodes appear directly across the input port of the
- Diode Type: PIN Diodes, RF Diodes
- VR: 75 volts
-
Supplier: Richardson RFPD
Description: Single Diode Configuration: This device is a Silicon-Glass PIN diode chip fabricated with MACOM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to
- Diode Type: PIN Diodes, RF Diodes
- VR: 80 volts
-
Supplier: Win Source Electronics
Description: Manufacturer: Littelfuse Inc. Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 962443-RF3923-000 Leakage Current: 50 nA Number of Channels: 4 Categories: TVS - Diodes Popularity: Low Fake Threat In the Open Market: 71 pct. Supply and
- Diode Type: Transient Voltage Suppressor Diodes (TVS)
-
Supplier: Win Source Electronics
Description: Win Source Part Number: 970510-SZSMF10AT1G Category: Circuit Protection>TVS - Diodes Series: Automotive, AEC-Q101, SZSMF Type: Zener Package: Tape & Reel Applications: Automotive Standard Package: 3,000 Mounting: SMD (SMT) Unidirectional Channels: 1
- Diode Type: Transient Voltage Suppressor Diodes (TVS)
- Tj: -55 to 150 C
- VR: 10 volts
-
Supplier: Win Source Electronics
Description: Manufacturer: Littelfuse Inc. Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1088105-RF3922-000 Leakage Current: 50 nA Number of Channels: 1 Categories: TVS - Diodes Alternative Parts (Cross-Reference): RF3922-000SESD0402X
- Diode Type: Transient Voltage Suppressor Diodes (TVS)
- RoHS Compliant: Yes
-
Supplier: Win Source Electronics
Description: Win Source Part Number: 1097641-SZESD7481MUT 5G Category: Circuit Protection>TVS - Diodes Series: Automotive, AEC-Q101 Type: Zener Package: Tape & Reel Applications: Automotive, RF Antenna Standard Package: 10,000 Mounting: SMD (SMT) Bidirectional
- Diode Type: Transient Voltage Suppressor Diodes (TVS)
- Tj: -40 to 125 C
- VR: 3.3 volts
-
Supplier: PUI - Projections Unlimited, Inc.
Description: CPDU Series-HF Surface Mount Device (SMD) Electrostatic Discharge (ESD) Protection Diodes
- Diode Type: RF Diodes
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: DFN1006 Electrostatic and Surge Protection (TVS/ESD) ROHS
- Diode Applications: Protector
- Diode Type: Transient Voltage Suppressor Diodes (TVS)
- RoHS Compliant: Yes
-
Supplier: Infineon Technologies AG
Description: This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-099R a suitable choice for mixer functions in applications
- Diode Applications: Detector, Mixer
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 110 mA
- RoHS Compliant: Yes
-
Supplier: Infineon Technologies AG
Description: These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for overvoltage protection. Their low barrier height, small forward voltage and low junction capacitance, make BAT17-04W a suitable choice for mixer and detector
- Diode Applications: Detector, Mixer
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 130 mA
- RoHS Compliant: Yes
-
Description: TVS DIODE 5.3VWM 21VC TSLP-2
- Diode Applications: Other
- Diode Type: Transient Voltage Suppressor Diodes (TVS)
- Tj: -55 to 125 C
- VR: 5.3 volts
-
Supplier: Acme Chip Technology Co., Limited
Description: TVS DIODE 5.3VWM 21VC TSSLP-2
- Diode Applications: Other
- Diode Type: Transient Voltage Suppressor Diodes (TVS)
- Tj: -55 to 125 C
- VR: 5.3 volts
-
Supplier: Infineon Technologies AG
Description: Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT 15 - 02 LRH a suitable choice for mixer and
- Diode Applications: Detector, Mixer
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 110 mA
- RoHS Compliant: Yes
-
Supplier: Infineon Technologies AG
Description: Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT 15 - 02 LS a suitable choice for mixer and
- Diode Applications: Detector, Mixer
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 110 mA
- RoHS Compliant: Yes
-
Supplier: Empower RF Systems
Description: Low insertion loss & leakage power circuit protection, high power handling
- Diode Applications: Limiter, Power Diode
- Diode Type: PIN Diodes, RF Diodes
-
Supplier: Nexperia B.V.
Description: -mode signals are attenuated. Each differential channel incorporates two signal lines that are coupled by integrated coils. Diodes provide protection to downstream components from ESD voltages up to ±15 kV on each signal line. Features and benefits One, two and three
- Device Type: ESD Suppressor
- Mounting / Packaging: Other
- RoHS Compliant: Yes
-
Supplier: Nexperia B.V.
Description: Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a small SOT23 Surface-Mounted Device (SMD) plastic package, designed to protect one signal line from the damage caused by ESD and other transients. The device may also be used for unidirectional ESD
- Diode Applications: Protector
- VR: 5 volts
-
Supplier: VAST STOCK CO., LIMITED
Description: TVS Diodes / ESD Suppressors ESD/EMI PROTECTION ANTENNA/RF 20kV 50V
- Diode Type: Transient Voltage Suppressor Diodes (TVS)
-
Supplier: ASAP Semiconductor LLC
Description: TVS DIODE 5V 1CH BI SMD 5V - - Bidirectional Surface Mount 2-XFDFN 2-XDFN (0.32x0.62) Digi-Reel«
- Mounting / Packaging: Surface Mount (SMT / SMD)
-
Supplier: ValueTronics International, Inc.
Description: The MA24106A is a used 6 GHz 0.2 Watt RF Sensor from Anritsu. Electronic test equipment sensors measure the power of waveforms, such as multi-tone and modulated radiofrequency (RF) waveforms. Sensors gather highly accurate modulation measurements using diode detectors.
- Frequency Range: 6000 MHz
-
Supplier: Crane Aerospace & Electronics
Description: The O-DET-2116 RF BIT Module provides several integrated functions for detection and measurement of RF levels. The unit consists of an internal temperature compensated RF detector. This rectifi es the RF signal and produces a dc level from the input signal. The
- Frequency Band: 9400 to 10000 MHz
- Input VSWR: 2.1 :1
- Limiter Type: Conventional Limiter
- Package Type: Connectorized
-
Supplier: PolyPhaser Corporation
Description: , it is supporting a power handling maximum of 10 Watts. RF surge protector GPS+06NFSF from PolyPhaser incorporates avalanche diode technology to provide protection for equipment at up to the max. power of 10W. Our coax surge protection device for RF is
- DC Energy Absorption: 1.75E-4 joules
- Frequency: 1200 to 1600 MHz
- Maximum DC Power: 10 watts
-
Supplier: RS Components, Ltd.
Description: RF ESD Protection Diodes 20kV TSLP-4 - Discrete Semiconductors - TVS Diodes
- Diode Type: Transient Voltage Suppressor Diodes (TVS)
-
Supplier: PolyPhaser Corporation
Description: is supporting a power handling maximum of 10 Watts. RF surge protector GPS+06NFM from PolyPhaser incorporates avalanche diode technology to provide protection for equipment at up to the max. power of 10W. Our coax surge protection device for RF is manufactured with
- Applications: Other
- Device Type: Coaxial / RF Surge Suppressors
- Maximum Surge Current: 15000 amps
- Mounting: Wall / Panel / Backboard Mount
-
Supplier: RS Components, Ltd.
Description: RF ESD Protection Diodes 15kV TSLP-4 - Discrete Semiconductors - TVS Diodes
- Diode Type: Transient Voltage Suppressor Diodes (TVS)
- Package Type: Other
- Pin Count: 4
-
Supplier: Nexperia B.V.
Description: -mode signals are attenuated. Each differential channel incorporates two signal lines that are coupled by integrated coils. Diodes provide protection to downstream components from ESD voltages up to ±15 kV on each signal line. Features and benefits One, two and three
- Package / Mounting: Other
- Rated Voltage: 15000 volts
- RoHS Compliant: Yes
-
Supplier: KRYTAR, Inc.
Description: male input connectors. KRYTAR diode limiters are broadband passive devices which find uses in receiver and RF component protection in addition to power leveling applications. KRYTAR Broadband Limiters are typically available from stock to 30 days ARO. KRYTAR offers complete
- Average Power: 1 watts
- Flat Leakage: 79.43 milliwatts
- Frequency Band: 6000 to 18000 MHz
- Input VSWR: 2 :1
-
Supplier: Qorvo
Description: Qorvo's TGL2201-SM is a packaged dual stage GaAs VPIN limiter that operates over the 2 to 12 GHz band. Vertical PIN diodes provide the limiting action at high input signal levels and low loss at small signals. The TGL2201-SM is suitable for a variety of wideband systems such as low noise
- Flat Leakage: 63.1 milliwatts
- Frequency Band: 2000 to 12000 MHz
- Insertion Loss: 0.5000 dB
-
Supplier: RS Components, Ltd.
Description: A wide range of PIN diodes suitable for use in RF switching and attenuator applications. Diode Configuration = Series Number of Elements per Chip = 2 Application = Surge Protection Device Maximum Forward Current = 200mA Maximum Reverse Voltage = 150V Typical Carrier Life
- IF: 200 mA
- Package Type: SOT23, Other
- VF: 1.2 volts
-
Supplier: Carlisle Interconnect Technologies
Description: (TVS) connector. Patented design for diode packaging can be used in several applications including military aircraft, commercial aircraft and helicopter environments. CarlisleIT packages TVS protection into all of our connector product lines utilizing an embedded diode (embedded
- Geometry: Straight
-
Supplier: L-com, Inc.
Description: units will also protect RF and video equipment connected to 75 Ohm coaxial lines. The CMSP-VIDEO-2 utilizes an avalanche diode in concert with a low capacitance diode array. This minimizes capacitive loading of the line and provides improved frequency response over competitor's
-
Supplier: MCG SURGE PROTECTION
Description: MCG's rack-mount surge protectors (512H, 516H, etc.) are already internally con- nected to the rack's metal framework. An additional ground wire is provided for connection to the frame rack to insure continued excellent protection.
- Device Type: SPD, Dataline and DC Signal, Plug-in Style, Coaxial / RF Surge Suppressors
- Mounting: In-Line / Integrally Attached, Rack Mount Type
- Technology: Silicon Avalanche Diode
Find Suppliers by Category Top
Featured Products Top
-
devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to (read more)
Browse Schottky Diodes Datasheets for Richardson RFPD -
power supply. A clean power supply is important for keeping power stable in sensitive analog and RF circuits. This includes op-amps, ADCs, and wireless devices. In strict applications like medical imaging or precise sensor arrays, signal quality is crucial. In these cases, the low output ripple (read more)
Browse General Purpose Diodes Datasheets for ODG (Origin Data Global)
More Information Top
Indicates content that may require registration and/or purchase.
-
Microwave components for wide-band phased arrays
2) The useof a switchable circulator provides tunnel diode RF protection and high isolation between active and inactive receiverelements.
-
OnChip Devices Introduces Low Capacitance Diode Arrays For RF Antenna ESD Protection
OnChip's new RF Antenna protection diodes are designed for applications requiring signal swing above and below ground with a maximum working voltage of up to ±7V.
-
Design of Compact ESD Protection Circuit for V-Band RF Applications in a 65-nm CMOS Technology
In the circuit of Fig. 1, the parasitic effects of ESD protection diodes caused RF performance degradation.
-
Optimization on Layout Style of ESD Protection Diode for Radio-Frequency Front-End and High-Speed I/O Interface Circuits
Layout optimization is the essential element to minimize the parasitic capacitance and to improve ESD robustness of the ESD protection diodes for RF front-end and high-speed I/O applications.
-
Characterization on ESD devices with test structures in silicon germanium RF BiCMOS process
[7] M.-D. Ker and C.-M. Lee, "interference of ESD protection diodes on RF performance in giga-Hz RF circuits,” m Proc. of IEEE Int.
-
Investigation of prebreakdown currents flowing in pseudospark gaps
They were protected by rf diodes to prevent a high current from flowing in them in the event of a random breakdown.
-
Investigation of LOCOS- and Polysilicon-Bound Diodes for Robust Electrostatic Discharge (ESD) Applications
[4] M. D. Kou and C. M. Lee, “Interference of ESD protection diodes on RF performance in Giga-Hz RF circuits,” in Proc.
-
A new ESD model: The Charged Strip Model
Figure 11: SEM image (upper left photo) of typical junction damage around the P+ diffusion contacts to the ESD protection diodes of RF IC leakage failures stressed above the FICSM withstand voltages shown in Figure 10.
-
Proceedings of the 2003 IEEE International Symposium on Circuits and Systems (Cat. No.03CH37430)
PROTECTION DIODES ON RF PERFORMANCE IN GIGA-HZ RF CIRCUITS .
-
T-diodes - a novel plug-and-play wideband RF circuit ESD protection methodology
Schematic of two-stage T- diodes RF ESD protection .