Secondary Electron Yield Silicon Nitride

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  • Electron beam induced deposition of silicon nanostructures from a liquid phase precursor
    The enhanced growth rate occurring on the gold-coated substrate relative to the uncoated substrate supports the hypothesis that secondary electrons induce nanodot growth, since the gold yields more secondary electrons than silicon nitride [20].
  • A new method for determining the secondary electron yield dependence on ion energy for plasma exposed surfaces
    Extracted secondary electron yield for aluminum, silicon dioxide, silicon, and titanium nitride as a function of ion velocity.
  • Electronic components
    …532-magnetic field dependence 1318 secondary winding 398 self-discharge … semiisolierend 824, 536 secondary electron emission, 1229 SENSEFET 1091 … ratio 103, 103 signal power , silane, 555 silicide, 1052 silicon , 473, 478 - amorphous, 556 … carbide, 541, 709 silicon nitride , 556, 1044, 1132 SIMOX…
  • Science of Microscopy
    …178 Fluorescence, 754–755 correction, 340 definition of, 339 focal spot, STED and, 822 yield , of X-rays .... See Frequency-modulated atomic force microscope Focus depth, of SEM, 142 Focused ion beam (FIB) of color film, secondary electron micrograph of, 200 SEM and, 196, 197, 200 … in AFM, 1045 of commercial scanner, 1044 of silicon nitride cantilever, 1044 Frequency space…
  • Free-standing, axially-symmetric diffraction gratings for neutral matter-waves: experiments and fabrication
    Gold was chosen because of its high secondary - electron yield , resulting in good imaging contrast. .... The aluminum served as an adhesion layer, since gold alone does not stick very well to surfaces like silicon or silicon- nitride [35].
  • The Tipsy single soft photon detector and the Trixy ultrafast tracking detector
    This is not relevant for the next dynodes where a limited efficiency results in a reduction of the effective secondary electron yield (SEY), which can easily be compensated for by a higher potential difference between the dynodes, or a larger number of .... As layer material we intend to apply doped silicon nitride ; crucial is the SEY as a function of the layer thickness and the energy of the incoming electrons [7].
  • High gain photodetectors formed by nano/micromachining and nanofabrication
    Secondary emission is obtained from thin films of SiO2 and SiOx (as in normal lead glass MCP) although CVD nucleating on silicon , silicon dioxide or silicon nitride offers many other high performance alternative SE materials systems, such as silicon silicides, metal oxides .... An optimized 10 nm thick Si/SiOx film will reach a peak SE yield of 3.5-4 betweeen 300-400 eV incident [x],[xi],[xii]; the thin SE films deposited to date exhibit the expected SE behavior vs incident electron energy.
  • Comparative plasma SNMS and AES measurements on ceramic powders and fibres
    Key words: boron carbide, boron nitride, silicon carbide, silicon nitride , ceramics, powders, coated particles, SNMS, Auger electron spectroscopy, depth profile. .... Electron gas secondary neutral mass spectrometry (SNMS), in which a high- frequency, low-pressure, noble gas plasma is simultaneously used … ion source and as a postionizing facility for the sputtered neutrals [1, 2] has been shown to yield ultimate depth resolution and…
  • 1988 TMS Fall Meeting Program
    This instrument yields simultaneous images of the surface topography or material contrast of a material ( secondary electron and mass-unresolved ion imaging), and SIMS-resolved images of its elemental or chemical composition. .... In the study of silicon nitride ceramics, all elemental and mole- cular fragments arising from the breakdown of interboundary phases can be detected and their distribution sharply imaged.
  • Nanopore formation by low-energy focused electron beam machining
    …Goldner A and Ashkenasy N 2009 The controlled fabrication of nanopores by focused electron-beam-induced etching Nanotechnology 20 245302 [12] Fijol J J, Then A M, Tasker G W and Soave R J 1991 Secondary electron yield of SiO2 ansd Si3N4 .... Sci. 48/49 464–72 [13] Howitt D G, Chen S J, Gierhart B C, Smith R L and Collins S D 2008 The electron beam hole drilling of silicon nitride thin films J. Appl. Phys. 103 024310 [14] Areana V 1971 Ionizing Radiation…


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