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Description: microorganisms are blocked in the filtration. The surface of the media or the inside is well filtered. After a period of use, the porous ceramic filter material is backwashed with gas or liquid to restore the original filtration capacity. Application Semiconductor Industry - Wafer handling,
- Chuck Geometry: Round
- Diameter: 4 to 12 inch
- Materials of Construction: Ceramic
- Type: Vacuum Chuck
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Supplier: Jiangyin Deli Laser Solutions Co., Ltd.
Description: power: =5W Cooling method: Closed-loop water cooling X-axis cutting speed: =600mm/s Applicable wafer sizes: 2, 4, or 6 inches Cutting line width: <15µm@ 40µm grooving depth Dicing street width: =30µm Processing method: Automatic single
- Automation / Control: Windows / PC Control
- Laser Output Power: 0.0 to 5 watts
- Laser Type: Other
- Materials Processed: Metal / Conductive Materials, Semiconductors / Electronics, Soft / Fibrous (Textiles, Foams, Paper)
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Supplier: Hyperion Materials & Technologies
Description: Premium micron synthetic diamond powder designed for metal bond systems. Designed for exceptional performance when slicing and dicing during processing of silicon wafers, including lapping of glass and ceramics.
- Abrasive Grain Type: Diamond
- Type: Lapping, Specialty / Other
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Supplier: Hyperion Materials & Technologies
Description: Premium micron synthetic diamond powder designed for resin bond systems. Designed for exceptional performance when slicing and dicing during processing of silicon wafers, including lapping of glass and ceramics.
- Abrasive Grain Type: Diamond
- Type: Lapping, Specialty / Other
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Supplier: Hyperion Materials & Technologies
Description: Synthetic ultra premium micron diamond powder is designed for processes where a precise size range and consistency are key. Designed for exceptional performance when back-grinding, dicing, and other precision machining of silicon and semiconductor wafers.
- Abrasive Grain Type: Diamond
- Type: Specialty / Other
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Description: given to memories as components and assemblies although methods also apply to heterogeneous components. Guidelines and requirements for customer-supplier interaction are provided to manage the complexity. NOTE In IEC 62435 (all parts), the term "components" is used interchangeably with dice,
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Supplier: Lumentum Operations, LLC
Description: Wafer scribing Full-cut wafer dicing Low-k dielectric grooving Micromachining of silicon, sapphire, ceramic, and metal Micro-via drilling PCB and flexboard cutting
- Beam Area: 0.2600 mm²
- Laser Output: Pulsed
- Laser Power: 2900 to 11000 milliwatts
- Laser Type: Laser Diode Modules
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Supplier: Lumentum Operations, LLC
Description: process control due to superior energy stability enabled by unique intracavity harmonic generation Customization available upon request Applications Wafer scribing Full-cut wafer dicing Low-k dielectric grooving Micromachining of silicon, sapphire, ceramic, and metal
- Beam Area: 0.3000 mm²
- Laser Output: Q-Switched, Pulsed
- Laser Power: 12000 to 40000 milliwatts
- Laser Type: Laser Diode Modules
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semiconductor nodes shrink, wafer flatness during processing becomes critical. Our high-precision porous ceramic vacuum chucks (Chucks) are specifically designed to meet the rigorous demands of 300mm (12-inch) wafer thinning, dicing, and inspection (read more)
Browse Wafer Chucks Datasheets for Fountyl Technologies Pte. Ltd. -
with microcontroller and DSP. A dedicated pin for shut down functionality is also available. The package is SO16. STDRIVEG600 is offered both in package part (PN is STDRIVEG600) and in wafer for dice business (PN is STDRIVEG600w (read more)
Browse Gate Drivers Datasheets for DigiKey
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Semiconductor Micromachining Using Diode-Pumped Solid-State Lasers
) industries for aplications including wafer dicing, scribing, direct via forming, and three-dimensional structuring. In the current study, two Qswitched and one mode-locked diode-pumped solid-state (DPSS) 355 nm lasers have been used to scribe grooves on silicon and sapphire wafer substrates
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Studies of chipping mechanisms for dicing silicon wafers
Miwa and Inasaki [2] showed that the cutting force on silicon wafer dicing increased in case of high feed rate, high depth of cut, low blade speed and the down-cutting mode.
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High-yield dicing of anodically bonded silicon–glass wafers by pressure-induced fracture
[14] Venkatakrishnan K, Sudani N and Tan B 2008 A high-repetition-rate femtosecond laser for thin silicon wafer dicing J. Micromech. Microeng.
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Rotary disk lasers in the UV, the visible, and the infrared
Fig. 14(b) compares the silicon wafer dicing speeds achieved with state of the art UV lasers[6,7] and the rotary disk laser.
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Introduction to Microfabrication 2nd Edition
Figure 24.7 Silicon wafer dicing by laser: a) scribe lines; b) vias, from ref.
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Comparative analysis of silicon wafer micromachining versus nonconventional technology
But in accordance with the task of this paper we will analyse only the application of laser iuicromuachining for silicon wafer dicing as individual chips ready for assembling processes.
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Comparative analysis of silicon wafers micromachining versus nonconventional technology
But in accordance with the task of this paper we will analyse only the application of laser inicromachining for silicon wafer dicing as individual chips ready for assembling processes.
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Die separation and rupture strength for deep reactive ion etched silicon wafers
10 45 [10] Venkatakrishnan K and Tan B 2007 Thin silicon wafer dicing with a dual-focused laser beam J.
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Evaluation of novel tooling for nanoscale injection molding
When dedicated silicon wafer dicing equipment was employed for cutting the wafer insert to fit in the mold, silicon wafers with thicknesses of 0.2 and 0.6 mm could be used as tooling for injection molding and could withstand pressures of …
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Porous silicon surfaces – A candidate substrate for reverse protein arrays in cancer biomarker detection
(A) Porous silicon wafer diced on small 666 mm2 chips placed on a plastic chip holder of microscopic slide format.
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http://dspace.mit.edu/bitstream/handle/1721.1/81754/860905002-MIT.pdf?sequence=2
A study of the silicon strain limit did observe anomalously high strain limits for silicon wafers diced from a p-type (100) wafer at 1015 cm-3 doping.