Silicon Wafer Dicing

Description: Closed-loop water cooling X-axis cutting speed: ≤600mm/s Applicable wafer sizes: 2, 4, or 6 inches Cutting line width: <15μm@ 40μm grooving depth Dicing street width: ≥30μm Processing method: Automatic single-axis processing via front-side or backside cutting Imaging system: Coaxial

• Laser Output Power: 0 to 5 watts
• Type: Complete / Turnkey System
• Laser Operation: Laser Cutting
• Options / Components: Laser Head / Focusing Unit, Laser Optics / Beam Delivery, Laser System Enclosure, Monitoring Sensors / System

Description: and solvent developable series High resolution patterning Low temperature processing (< 200°C) High quality, void-free bonding Superb adhesion to silicon and glass Good process compatibility (dicing, soldering) and high reliability (HAST, TCT)

• Applications: Electronics / Microelectronics
• Thick Film Type: Resistor

Description: The scribe machines automatically perform parallel alignment and positioning and scribe silicon substrates and compound semiconductor substrates, such as GaAs, InP, and GaN. It is capable for processing maximum of 4-inch wafers and wafer-to-bar scribing, bar-to-chip　scribing,

• Maximum Wafer / Part Size: 101.59994513602963 mm
• Mounting / Loading: Floor Mounted / Stand-alone
• Form Factor: Monitor / Instrument
• Applications: Semiconductor Wafers

Description: Premium micron synthetic diamond powder designed for resin bond systems. Designed for exceptional performance when slicing and dicing during processing of silicon wafers, including lapping of glass and ceramics.

• Compound / Abrasive Type: Diamond
• Type: Lapping
• Features: Specialty / Other

Description: Material High-purity aluminum oxide (Al₂O₃), silicon carbide (SiC), or silicon nitride (Si₃N₄). Advanced porous ceramic structure for uniform vacuum distribution. Features The porosity is high: An important feature of porous ceramics is that they have more uniform and controllable

• Diameter: 4 to 12 inch
• Materials: Ceramic
• Chuck Geometry: Round
• Chuck Type: Vacuum Chuck, Wafer Chuck

Description: Synthetic ultra premium micron diamond powder is designed for processes where a precise size range and consistency are key. Designed for exceptional performance when back-grinding, dicing, and other precision machining of silicon and semiconductor wafers.

• Applications: Abrasive / Erosive Wear Protection
• Material Type: Diamond / Diamond-Like

Description: The cleaving machines automatically perform parallel alignment and positioning and cleave with the blade the silicon substrates and compound semiconductor substrates, such as GaAs, InP, and GaN, from the scribed positions. It is capable for processing maximum of 4-inch wafers and

• Maximum Wafer / Part Size: 101.59994513602963 mm
• Mounting / Loading: Floor Mounted / Stand-alone
• Form Factor: Monitor / Instrument
• Applications: Semiconductor Wafers

Description: customers will have access to advanced DRIE process up to 1:30 aspect ratio. As well as reliable and qualified deep vacuum wafer level package process below 10mTorr. Tronics offer is not limited to wafer processing. We also perform wafer level test and dicing. This

• Services: Design / Engineering, Production, Prototyping, R & D / Development
• Capabilities: Dry Etching (Plasma / RIE), Inspection / Testing, Metallization - Electroplating, Oxidation / Doping, Packaging / Backend Processing, Photolithography, Screen Printing, Wafer Bonding, Wet / Chemical Etching
• Features: Europe Only, Specialty / Other
• Materials: Quartz, SOI, Silicon

Description: IEC 62435-9:2021 specifies storage practices encompassing silicon and semiconductor device building blocks of all types that are integrated together to into products in the form of either packages or boards that can be stored as fully assembled units or partial assemblies. Special attention

Description: repetition rates High reliability due to low fluence in harmonic crystals and no cavity optic coatings exposed to UV 355 and 532 nm outputs available Customization available upon request Applications Wafer scribing Full-cut wafer dicing Low-k dielectric grooving Micromachining

• Wavelength Range: 355 nm
• Laser Power: 2,900 to 11,000 milliwatts
• Beam Area: 0.26 mm²
• Beam Divergence: 1.7999999999999976 to 2.000000000000007 millirad

Description: generation Customization available upon request Applications Wafer scribing Full-cut wafer dicing Low-k dielectric grooving Micromachining of silicon, sapphire, ceramic, and metal Micro-via drilling PCB and flexboard cutting

• Wavelength Range: 354.7 nm
• Laser Power: 12,000 to 40,000 milliwatts
• Beam Area: 0.3 mm²
• Operating Voltage: 200 to 240 volts