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Supplier: ODG (Origin Data Global)
Description: 30V 100A 54W 1 N-Channel TO-252 MOSFETs ROHS
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Supplier: ODG (Origin Data Global)
Description: 1kV 5A 60W 3.5O@10V,1.75A 4.5V@100uA 1 N-Channel TO-220 MOSFETs ROHS
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Supplier: ODG (Origin Data Global)
Description: 1kV 12A 1.2O@10V,6A 272W 5V@250uA 1 N-Channel TO-220 MOSFETs ROHS
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Supplier: ODG (Origin Data Global)
Description: 1kV 8A 2.3O@10V,4A 167W 5V@250uA 1 N-Channel TO-220 MOSFETs ROHS
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN 100Vcbo 100Vceo 5.0Vebo 65W
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 100Vcbo 100Vceo 5.0Vebo 3.0A 40W
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PNP 100Vcbo 100Vceo 5.0 Vebo 6.0A 65W
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Transistor General Purpose
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 40V 225mW 100@10mA,1V 200mA NPN SOT-23 Bipolar Transistors - BJT ROHS
- Package Type: SOT23
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
- Package Type: Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP - Darlington 60V 4MHz Through Hole TO-220-3
- Package Type: TO-220, Other
- Polarity: PNP
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1250656-SL5511 Manufacturer Homepage: www.fairchildsemi.co m Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: Integra Technologies, Inc.
Description: IGN0110UM100 is a dual gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100 – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Package Type: Other
- Transistor Type: Power BJT Transistors
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Supplier: Acme Chip Technology Co., Limited
Description: SL10 SERIES: SLOT SENSORSLOT
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed radar transistor device part number IB0810M100 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 . While operating in class C mode at Vcc=36V, this common base device supplies a minimum of 100 watts of peak pulse
- Operating Frequency: 870 to 990 MHz
- Output Power: 100 watts
- Package Type: Other
- Power Gain: 10.3 dB
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Description: TRANS NPN 100V 0.02A SMINI3
- Transistor Type: General Purpose BJT
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
- Package Type: Other
- Packing Method: Tape Reel, Other
- Polarity: PNP
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Supplier: DigiKey
Description: Optoisolator Transistor with Base Output 5300Vrms 1 Channel 6-DIP
- Isolation Voltage: 5300 volts
- Mounting Option: Through Hole (Plug-in)
- Operating Temperature: -55 to 100 C
- Optocoupler Input: DC
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Bipolar RF Transistors - TRANSISTORS - Transistors (BJT) - Single - MMBT3904SL -- 1078261-MMBT3904SLSupplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1078261-MMBT3904SL Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 300MHz Transistor Polarity: NPN Family Name: MMBT3904SL Categories: Discrete Semiconductor Products Status: Active
- IC(max): 200 milliamps
- Operating Frequency: 300 MHz
- PD: 227 milliwatts
- Package Type: SOT3, Other
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Supplier: Rochester Electronics
Description: Power Field-Effect Transistor
- Package Type: Other
- Packing Method: Shipping Tube / Stick Magazine, Other
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - Pre-Biased 150mW +/-100mA
- Polarity: NPN, PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, POWER TRANSISTOR, 100AMP, 1000V TRANSISTOR. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Infineon Technologies AG
Description: PNP Silicon Switching Transistors Summary of Features High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package
- Package Type: SOT23, Other
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Bipolar RF Transistors - Discrete Semiconductor Products - Transistors - Bipolar (BJT) -- 2SD11490SLSupplier: Acme Chip Technology Co., Limited
Description: TRANS NPN 100V 0.02A MINI3
- IC(max): 20 milliamps
- Packing Method: Tape Reel, Other
- VCEO: 100 volts
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 20V 2.8A 400mW 35mO@4.5V,3.6A 950mV@50uA N Channel SOT-23 MOSFETs ROHS
- PD: 400 milliwatts
- Package Type: SOT23
- Polarity: N-Channel
- V(BR)DSS: 20 volts
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Package Type: TO-251 / TO-252, Other
- Polarity: N-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Description: IGBT 600V 15A 25W TO220FP
- Packing Method: Shipping Tube / Stick Magazine, Other
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Supplier: LCSC Electronics Technology (HK) Limited
Description: TO-220F IGBTs ROHS
- Package Type: TO-220
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Supplier: Win Source Electronics
Description: Manufacturer: Micro Commercial Co Win Source Part Number: 796785-TIP100-BP Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Power - Max: 80W Transistor Type: NPN - Darlington Family Name: TIP
- IC(max): 0.0500 milliamps
- Package Type: TO-220, SOT3
- Packing Method: Shipping Tube / Stick Magazine, Other
- Polarity: NPN
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Supplier: Win Source Electronics
Description: Manufacturer: AUK corp Win Source Part Number: 11582-2SA1980SL Family Name: 2SA1980S Alternative Parts (Cross-Reference): 2SA1048-Y(T4PA-K,F; 2SA1048-Y(TPE4ND,F; 2SA1048-Y(T4CANO); 2SA1048-Y(TP4,OKI); Introduction Date: August 21, 2000 ECCN: EAR99 Estimated EOL Date: 2028 Popularity: Low Fake
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Supplier: Richardson RFPD
Description: Designed primarily for linear large-signal output stages in the 2.0-100 MHz frequency range.
- Operating Frequency: 2 to 100 MHz
- Output Power: 600 watts
- Package Type: Other
- Power Gain: 17 dB
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Supplier: Rochester Electronics
Description: IGBT D2PAK 350V SPECIAL
- Package Type: TO-263, Other
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Supplier: ROHM Semiconductor GmbH
Description: BSS63A is a SOT-23 package Transistor for high voltage amplifier.
- Package Type: SOT23, Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
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collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
All of Rochester’s in-stock devices are 100% authorized, traceable, certified, and guaranteed factory-direct and risk-free from our supplier partners including Infineon, Nexperia, (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Rochester Electronics -
almost 100 years, Fuji Electric has been in the forefront of technology and energy products. Our goals to manufacture the highest quality, superbly engineered, innovative products have been incorporated into the company since the beginning. Did you also know Fuji Electric Corp (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Fuji Electric Corp. of America -
Semiconductor highlights! More About Fuji Electric Did you know that Fuji Electric started manufacturing electrical machinery in 1924? Built its first hydraulic turbine in 1936? For almost 100 years, Fuji Electric has been in the forefront of (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Fuji Electric Corp. of America -
machinery in 1924? Built its first hydraulic turbine in 1936? For almost 100 years, Fuji Electric has been in the forefront of technology and energy products. Our goals to manufacture the highest quality, superbly engineered, innovative products have been incorporated into the company (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Fuji Electric Corp. of America -
products since 1970. Fuji Electric Co., Ltd., celebrating their 100th anniversary this year, began developing power electronics equipment in 1923, and is a global leader in industrial products ranging from semiconductors, HMIs, contactors, relays, and power generation equipment to AC drives and uninterruptible power supply systems (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Fuji Electric Corp. of America -
SMA?f (50Ω) N?type, SMA?K, customized connectors Matches standard microwave device interfaces, easy integration Average Power 200W@1G,100W@8G,30W@18G (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd. -
The Analog Devices LTC7893 synchronous boost controller drives all N-channel synchronous gallium nitride (GaN) field-effect transistor (FET) power stages from output voltages up to 100 V. The LTC7893 solves many of the challenges traditionally faced when using Ga (read more)
Browse IC Switching Voltage Regulators Datasheets for DigiKey
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CR4 - Thread: How to Drive Stepper Motor
...... i ve used sl100 transistors to drive 24v stepper motor .
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CR4 - Thread: Water Level Indicator
i am thirumalai i want to some technical information of the water level sensor and how to working principle magnetic type of water level sensors.already make a wire type sensor using for sl100 transistor directly apply to 12volt supply for in …
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Temperature dependence of pulse-induced mechanoluminescence excitation in coloured alkali halide crystals
decade counter CD4017 and its output is connected to transistor SL100 which controls the relay and a high power electromagnet specially made for the proposed system is connected to the relay so that it impacts different strength induced ML in crystal.
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Design and implementation of fuzzy logic control speed control system for a converter fed DC drive using 8097 micro controller
The ZCD converts the input into square wave, which is then given to the base of the transistor SL100 .
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Battery model for embedded systems
A simple inverter configuration us- ing npn transistor ( SL100 ) was used to discharge the bat- tery.
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http://krex.k-state.edu/dspace/bitstream/handle/2097/9189/WesleyDavis2011.pdf?sequence=1
This keeps transistor Q1 ON. The collector of Q1 (BC107) is coupled to the base of Q2 ( SL100 ), and thus Q2 will …
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Conversion of an Indian Three Wheeler Scooter into Hybrid Fuel Cell Ni-MH Battery Vehicle and Validation of the Vehicle Model for the Bajaj Three Wheeler Scoot...
Also in the beginning transistor SL 100 is off and its collector is at a high potential … Also SL100 conducts and its collector voltage goes low.
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A New High-Efficiency Voltage Regulator
R2- 5600 Q2: SL100 With a silicon transistor for Q, and with Eo = 12 volts, the efficiency is 95 percent.
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Advances in Mechanics Engineering
causing switching transistor not cut-off Here,The SL100 sensor produced in Hefei Vincent Sensor Company is chosen, which DC operating voltage is …
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Cryocoolers 11
The SL200 is a design equivalent to the SL100 , which consistently exceeds 4500 h MTTF in accelerated … PLANCK’s Low Frequency Instrument employs High Electron Mobility Transistor amplifiers cooled to ~20 K; the sorption cooler …