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Supplier: ODG (Origin Data Global)
Description: 30V 100A 54W 1 N-Channel TO-252 MOSFETs ROHS
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2MA, 100MW. Search-friendly keywords include transistor, BJT, switching, amplification, 2MA, 100MW, Bipolar Transistor, JFETs. This listing supports clearer product discovery for
- PD: 100 milliwatts
- TJ: -20 to 80 C
- Transistor Type: Bipolar RF Transistors
- Polarity: N-Channel
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 0.02A. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 0.02A, Bipolar Transistor, Single Bipolar Transistors. This listing supports
- IC(max): 20 milliamps
- VCEO: 100 volts
- PD: 200 milliwatts
- Transistor Type: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP Black Bulk Product overview: SL5511300 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and
- IC(max): 100 milliamps
- PD: 260 milliwatts
- TJ: -55 C
- Transistor Type: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100mA, 30V, 5.3kV. Search-friendly keywords include transistor, BJT, switching, amplification, 100mA, 30V, 5.3kV, Bipolar Transistor, Transistor, Photovoltaic
- IC(max): 100 milliamps
- PD: 260 milliwatts
- hfe: 400
- TJ: -55 C
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1078261-MMBT3904SL Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 300MHz Transistor Polarity: NPN Family Name: MMBT3904SL Categories: Discrete Semiconductor Products Status: Active Temperature Range -
- VCEO: 40 volts
- IC(max): 200 milliamps
- PD: 227 milliwatts
- TJ: 150 C
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1078269-MMBT3906SL Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case /
- Features: Other
- Polarity: PNP
- Package Type: SOT3
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN 100Vcbo 100Vceo 5.0Vebo 65W
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 40V 225mW 100@10mA,1V 200mA NPN SOT-23 Bipolar Transistors - BJT ROHS
- IC(max): 200 milliamps
- VCEO: 40 volts
- fT: 300 MHz
- PD: 225 milliwatts
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Supplier: VAST STOCK CO., LIMITED
Description: Darlington Transistors 100Vcbo NPN Trans 100Vceo 5.0Vebo 50mA
- Transistor Type: Darlington
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Supplier: Win Source Electronics
Description: Manufacturer: Panasonic Electronic Components Win Source Part Number: 1004518-2SD11490SL Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ)
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: Acme Chip Technology Co., Limited
Description: MOSFET 6N-CH 100V 90A ISOPLUS
- V(BR)DSS: 100 volts
- IDSS: 90,000 milliamps
- Transistor Type: MOSFET
- Features: Other, Shipping Tube / Stick Magazine
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP - Darlington 60V 4MHz Through Hole TO-220-3
- Features: Other
- Polarity: PNP
- Package Type: TO-220
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors N-CH 7 A - 600V POWERMESH IGBT
- Transistor Type: IGBT
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Supplier: Win Source Electronics
Description: Manufacturer: AUK corp Win Source Part Number: 11582-2SA1980SL Family Name: 2SA1980S Alternative Parts (Cross-Reference): 2SA1048-Y(T4PA-K,F; 2SA1048-Y(TPE4ND,F; 2SA1048-Y(T4CANO); 2SA1048-Y(TP4,OKI); Introduction Date: August 21, 2000 ECCN: EAR99 Estimated EOL Date: 2028 Popularity: Low Fake
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, -100V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; DC Collector Current:8A; Power Dissipation Pd:1.75W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency ft:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, -100V; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:6A; Power Dissipation:65W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 100V; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:8A; Power Dissipation:1.75W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
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Supplier: DigiKey
Description: Optoisolator Transistor with Base Output 5300Vrms 1 Channel 6-DIP
- Isolation Voltage: 5,300 volts
- Operating Temperature: -55 to 100 C
- Input: DC
- Output: Phototransistor
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 20V 2.8A 400mW 35mΩ@4.5V,3.6A 950mV@50uA N Channel SOT-23 MOSFETs ROHS
- V(BR)DSS: 20 volts
- VGS(off): 0.95 volts
- rDS(on): 0.035 ohms
- PD: 400 milliwatts
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Transistors - Isolators - Optoisolators - Transistor, Photovoltaic Output Optoisolators -- SL5501300Supplier: Acme Chip Technology Co., Limited
Description: OPTOISO 5.3KV TRANS W/BASE 6DIP
- TJ: -55 to 100 C
- Features: Other, Shipping Tube / Stick Magazine
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Supplier: ODG (Origin Data Global)
Description: OPTOISO 5.3KV TRANS W/BASE 6DIP
- Operating Temperature: -55 to 100 C
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Supplier: Integra Technologies, Inc.
Description: IGN0110UM100 is a dual gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100 – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain.
- Power Gain: 12.5 dB
- Output Power: 100 watts
- Operating Frequency: 100 to 1,000 MHz
- Transistor Type: MOSFET RF Transistors, Power BJT Transistors
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, PNP 100V 6A
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Supplier: ODG (Origin Data Global)
Description: SL10 SERIES: SLOT SENSORSLOT
- Measurement Range: 0.394 inch
- Sensor Technology: Optical Linear Encoder
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Description: TRANS NPN 100V 0.02A SMINI3
- VCEO: 100 volts
- IC(max): 20 milliamps
- Transistor Type: General Purpose BJT
- Features: Other, Tape Reel
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, PNP TRAN 100V 25A
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Supplier: VAST STOCK CO., LIMITED
Description: Transistor Output Optocouplers Optocoupler Single-Transistor
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Description: P-CHANNEL MOSFET, SOT-23-3L
- V(BR)DSS: 30 volts
- IDSS: 4,300 milliamps
- Transistor Type: MOSFET
- Features: Other, Tape Reel
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Transistors - Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT -- 2SCR554PFRAT100
Description: Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT
- Transistor Type: General Purpose BJT
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 100V 3A, DPAK
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 100V 1A, TO-220
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Power Gain: 6 dB
- Output Power: 100 watts
- Operating Frequency: 1,200 to 1,400 MHz
- Features: Other
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Description: OPTOISO 5.3KV TRANS W/BASE 6DIP
- Operating Temperature: -55 to 100 C
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed avionics transistor part number IB0607S100 is designed for UHF-Band avionics systems operating at 653 to 687 . While operating in class C mode under 20us pulse conditions at VCC= 50V, this common base device supplies a minimum of 120 watts of peak pulse power. It
- Power Gain: 13.1 dB
- Operating Frequency: 653 to 687 MHz
- Output Power: 100 watts
- Transistor Type: Bipolar RF Transistors
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collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
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Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
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All of Rochester’s in-stock devices are 100% authorized, traceable, certified, and guaranteed factory-direct and risk-free from our supplier partners including Infineon, Nexperia, (read more)
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almost 100 years, Fuji Electric has been in the forefront of technology and energy products. Our goals to manufacture the highest quality, superbly engineered, innovative products have been incorporated into the company since the beginning. Did you also know Fuji Electric Corp (read more)
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Semiconductor highlights! More About Fuji Electric Did you know that Fuji Electric started manufacturing electrical machinery in 1924? Built its first hydraulic turbine in 1936? For almost 100 years, Fuji Electric has been in the forefront of (read more)
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machinery in 1924? Built its first hydraulic turbine in 1936? For almost 100 years, Fuji Electric has been in the forefront of technology and energy products. Our goals to manufacture the highest quality, superbly engineered, innovative products have been incorporated into the company (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Fuji Electric Corp. of America -
products since 1970. Fuji Electric Co., Ltd., celebrating their 100th anniversary this year, began developing power electronics equipment in 1923, and is a global leader in industrial products ranging from semiconductors, HMIs, contactors, relays, and power generation equipment to AC drives and uninterruptible power supply systems (read more)
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SMA?f (50Ω) N?type, SMA?K, customized connectors Matches standard microwave device interfaces, easy integration Average Power 200W@1G,100W@8G,30W@18G (read more)
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signal deviation. In terms of power load capacity, every single RF channel supports a peak power of 100W and a continuous stable average power of 50W, which can adapt to high-load RF signal transmission working conditions (read more)
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CR4 - Thread: How to Drive Stepper Motor
...... i ve used sl100 transistors to drive 24v stepper motor .
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CR4 - Thread: Water Level Indicator
i am thirumalai i want to some technical information of the water level sensor and how to working principle magnetic type of water level sensors.already make a wire type sensor using for sl100 transistor directly apply to 12volt supply for in …
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Temperature dependence of pulse-induced mechanoluminescence excitation in coloured alkali halide crystals
decade counter CD4017 and its output is connected to transistor SL100 which controls the relay and a high power electromagnet specially made for the proposed system is connected to the relay so that it impacts different strength induced ML in crystal.
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Design and implementation of fuzzy logic control speed control system for a converter fed DC drive using 8097 micro controller
The ZCD converts the input into square wave, which is then given to the base of the transistor SL100 .
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Battery model for embedded systems
A simple inverter configuration us- ing npn transistor ( SL100 ) was used to discharge the bat- tery.
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http://krex.k-state.edu/dspace/bitstream/handle/2097/9189/WesleyDavis2011.pdf?sequence=1
This keeps transistor Q1 ON. The collector of Q1 (BC107) is coupled to the base of Q2 ( SL100 ), and thus Q2 will …
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Conversion of an Indian Three Wheeler Scooter into Hybrid Fuel Cell Ni-MH Battery Vehicle and Validation of the Vehicle Model for the Bajaj Three Wheeler Scoot...
Also in the beginning transistor SL 100 is off and its collector is at a high potential … Also SL100 conducts and its collector voltage goes low.
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A New High-Efficiency Voltage Regulator
R2- 5600 Q2: SL100 With a silicon transistor for Q, and with Eo = 12 volts, the efficiency is 95 percent.
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Advances in Mechanics Engineering
causing switching transistor not cut-off Here,The SL100 sensor produced in Hefei Vincent Sensor Company is chosen, which DC operating voltage is …
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Cryocoolers 11
The SL200 is a design equivalent to the SL100 , which consistently exceeds 4500 h MTTF in accelerated … PLANCK’s Low Frequency Instrument employs High Electron Mobility Transistor amplifiers cooled to ~20 K; the sorption cooler …