Products/Services for Transistor Directory
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Semiconducting Materials - (233 companies)Semiconductors (metalloids) or semiconductor materials are used to fabricate microelectronic and optoelectronic devices such as transistors, photodetectors or solar cells. Description. Semiconductors and semiconductor materials are used to fabricate... -
Transistors - (919 companies)Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Transistors are small, versatile semiconductor devices designed to switch or amplify electronic signals and power. Almost all... -
Online Directories and Search Engines - (408 companies)Online directories list companies on web sites that focus on specific industries or segments. Search engines provide targeted web results based on keywords and other advanced criteria. Online directories and search engines provide links to websites... -
Darlington Transistors - (125 companies)Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written SS) and require less space than configurations that use two discrete... -
RF Transistors - (315 companies)RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. RF transistors are designed to handle high-power radio frequency (RF) signals in devices... -
Bipolar RF Transistors - (185 companies)Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters...
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RF MOSFET Transistors - (92 companies)MOSFET RF transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. MOSFET RF transistors...
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Power Bipolar Transistors - (87 companies)Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals...
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Insulated Gate Bipolar Transistors (IGBT) - (204 companies)Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching...
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Small-Signal Bipolar Transistors (BJT) - (157 companies)Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Small signal bipolar junction...
Product News
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Win Source Electronics
MMBT3904LT3G NPN Bipolar Transistor Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features. Collector-Emitter Voltage (VCEO): 40V. Collector-Base Voltage (VCBO): 60V. Emitter-Base Voltage (VEBO): 6V. Continuous Collector Current (IC): 200mA. DC Current Gain (hFE): 100 to 300. Collector-Emitter Saturation Voltage (Vce (sat)): 300mV @ 5mA, 50mA. Maximum Power Dissipation: 300mW. Frequency... (read more)Browse Transistors Datasheets for Win Source Electronics -
Win Source Electronics
ON Semi SMMBT3904LT3G 40V NPN Transistor The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide range of applications, from audio signal... (read more)Browse Transistors Datasheets for Win Source Electronics -
Fujipoly® America Corp.
Sarcon® TIM Cases for Cooler Transistors In an effort to streamline your manufacturing process and improve transistor cooling, Fujipoly (R) offers a large assortment of box-shaped Sarcon (R) thermal interface caps. These cases are available in standard sizes to fit many transistors and can be custom ordered to your exact specifications. Installation takes seconds by sliding over the heat-generating component. Once fitted, unwanted heat is dissipated to the surrounding environment or nearby heatsinks. Depending on the power and cooling... (read more)Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
LIXINC Electronics Co., Limited
Microchip 2N2907AUB PNP Bipolar Transistor The Microchip 2N2907AUB is a high-performance PNP bipolar transistor offering excellent flexibility for multiple electronic applications. With its robust 600mA collector current capacity and a collector-emitter voltage (VCEO) of 60V, this component is designed to meet the needs of engineers working on a wide range of designs. Its compact 3-SMD package makes it well-suited for space-constrained environments, providing engineers with an easy-to-integrate solution for both low and medium-power... (read more) -
LIXINC Electronics Co., Limited
2N2907AUB High-Current PNP Transistor The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities... (read more) -
Rochester Electronics
Authorized Source: IGBT, MOSFETs, Transistors All of Rochester 's in-stock devices are 100% authorized, traceable, certified, and guaranteed factory-direct and risk-free from our supplier partners including Infineon, Nexperia, onsemi, Renesas, and many more. Additionally, we stock a large selection of power management, diodes, and protection devices that are commonly used within these same designs. (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Rochester Electronics -
Win Source Electronics
ULN2803ADWR Darlington Transistor Array IC The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a wide range of loads from microcontroller or logic-level signals. It offers robust performance with built-in suppression diodes for inductive load protection, making it ideal for applications like industrial control systems, automotive electronics... (read more)Browse Transistors Datasheets for Win Source Electronics -
DigiKey
STDRIVEG600 Gate Driver for GaN Transistors STMicroelectronics' STDRIVEG600 is a single-chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFETs. The high-side section is designed to stand a voltage up to 600 V. It is suitable for applications with bus voltage up to 500 V. The STDRIVEG600 can drive high-speed silicon and GaN FETs thanks to the high current capability, short propagation delay of 45 ns in typical conditions, and operation with a supply voltage down to 5 V. The dV/dt immunity is high: +-200 V/ns. (read more)Browse Gate Drivers Datasheets for DigiKey -
Nexperia B.V.
Video: Strengths of Nexperia’s bipolar transistors In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt regulators with power bipolar transistors in a current sink configuration. This linear regulation approach is used as an output stage prior to a boost stage and offers robust and sustainable operation of the LEDs. Nexperia 's power bipolar transistors in DPAK... (read more)Browse Power Bipolar Transistors Datasheets for Nexperia B.V. -
Qorvo
40W, DC-6GHz, GaN on SiC RF Transistors The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)Browse Transistors Datasheets for Qorvo
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Elimination of magnetic saturation due to fast dynamic response in DC-DC converter
Vd of differencial circuit is directory applied to transistor switch Tr to short resistor R2 in oscillator circuit.
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A superassociative tagged cache coherence directory
Table 1: Tagged directory characteristics with equal transistor counts (p=16; m=32).
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Extraction and simulation of potential bridging faults and open defects affecting standard cell libraries
As inputs, we introduce the entire names of all the nets and transistors in the transistor netlist as the SVDB directory .
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Reducing the latency of L2 misses in shared-memory multiprocessors through on-chip directory integration
It is preferable to invest the transistor budget dedicated to this direc- tory in increasing the number of entries (which affects the hit rate) rather than the directory width.
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A novel multiprocessor cache memory
Also the com- plexity of such a dual-port directory cache management unit only has a 33% hardware ( transistors ) increase from a single- directory one.
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Darlington Transistor Array | Microsemi
Home Products Product Directory Integrated Circuits Power Management Darlington Transistor Array .
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CR4 - Thread: photo analysis...
You might be interested in: Programmable Unijunction Transistors (PUT), Tool Posts, Online Directories and Search Engines .
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Hierarchical Assertion-Based Verification
• Design : FSS directory -based switch snoop filtering (~60M transistors , 0.18µ Cu process .
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Automatic data acquisition for VLSI CAD database management
coordinates ), subcell names, number of transistors , file owner, file lenth ( from its directory file ), related file names ( with same file name but diffrent extension file name ), and so on.
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Technical literature
Also included is a section listing suitable American replacements for for eign transistors , and a semiconductor diode cross-reference directory .
