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Supplier: Nexperia B.V.
Description: Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in an SOD323F (SC-76) very small Surface-Mounted Device (SMD) plastic package. Features and benefits Average forward current: IF ≤ 2 A Reverse voltage: VR ≤ 10 V Ultra low
- VF: 460 to 0.46 volts
- IF: 2,000 mA
- VR: 10 volts
- IR: 3 mA
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Supplier: Nexperia B.V.
Description: Planar Schottky barrier diode with an integrated guard ring for stress protection encapsulated in a SOD882 leadless ultra small plastic package. Features and benefits Forward current: 0.5 A Reverse voltage: 20 V Ultra low forward voltage Leadless
- Features: Other, Power Diode, Protector, Schottky, Schottky Barrier Diodes
- Applications: Rectifier Diode, Switching
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Supplier: Nexperia B.V.
Description: General-purpose Schottky diode in an ultra small DFN1006BD-2 (SOD882BD) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Features and benefits Forward current: IF ≤ 0.2 A Reverse voltage: VR ≤ 40 V Ultra small SMD plastic package
- VF: 360 to 0.36 volts
- IF: 200 mA
- VR: 40 volts
- IR: 500 mA
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Supplier: Nexperia B.V.
Description: Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small SMD plastic package. Features and benefits Forward current: 1 A Reverse voltage: 20 V Ultra high-speed switching Very low forward
- VF: 550 to 0.55 volts
- IF: 1,000 mA
- VR: 20 volts
- IR: 0.05 mA
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Supplier: ROHM Semiconductor USA, LLC
Description: RB088NS200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically
- VF: 0.88 volts
- IF: 5,000 mA
- VR: 200 volts
- IR: 0.007 mA
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Supplier: Solid State Devices, Inc.
Description: FEATURES: Optimized for 2.1V and 3.3V output power supplies. The SUPER SCHOTTKY series has been designed to provide ultra low forward voltage drops at low operating temperatures of 75°C. Low VF, typically 380mV (per leg) at 75°C Low reverse leakage
- VF: 0.57 volts
- VR: 25 volts
- IFSM: 350 amps
- Features: Other, Schottky Barrier Diodes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Low-Power, Dual, Schottky, 0.526 V, 5 A. Search-friendly keywords include diode, rectifier, Schottky,
- Applications: Rectifier Diode
- Features: Schottky Barrier Diodes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Low-Power, Dual, Schottky, 0.54 V, 5 A. Search-friendly keywords include diode, rectifier, Schottky, switching
- Applications: Rectifier Diode
- Features: Schottky Barrier Diodes
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Supplier: ROHM Semiconductor GmbH
Description: RB218BM200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically
- VF: 0.88 volts
- IF: 10,000 mA
- VR: 200 volts
- VRRM: 200 volts
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Supplier: ROHM Semiconductor GmbH
Description: RB088BM200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically
- VF: 0.88 volts
- IF: 5,000 mA
- VR: 200 volts
- VRRM: 200 volts
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Supplier: Infineon Technologies AG
Description: Silicon Schottky Diode Summary of Features For low-loss, fast-recovery, meter protection,bias isolation and clamping application Guard ring protected Low forward voltage Pb-free (RoHS compliant) package Applications Automotive USB power delivery - Head unit
- VF: 0.8 volts
- IF: 200 mA
- VR: 30 volts
- Features: Other, Schottky Barrier Diodes
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Supplier: ROHM Semiconductor GmbH
Description: RB218BM200FH is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically
- VF: 0.88 volts
- IF: 10,000 mA
- VR: 200 volts
- VRRM: 200 volts
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Supplier: ROHM Semiconductor GmbH
Description: RB088NS200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically
- VF: 0.88 volts
- IF: 5,000 mA
- VR: 200 volts
- VRRM: 200 volts
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Supplier: Littelfuse, Inc.
Description: Littelfuse DST series Ultra Low VF Schottky Barrier Rectifier is designed to meet the general requirements of commercial and industry applications by providing high temperature, low leakage and lower VF products.It is suitable for high frequency switching mode power
- VF: 1.6 volts
- IF: 5,000 mA
- IFSM: 120 amps
- Package: DPAK
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Supplier: Allied Electronics, Inc.
Description: The Schottky rectifier module has been optimized for ultra low forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125°C junction temperature. Typical applications are in
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Low-Power. Search-friendly keywords include diode, rectifier, Schottky, switching diode, Low-Power, Diode and Rectifier, Single
- Features: Rectifier Diode
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Supplier: Infineon Technologies AG
Description: purpose diodes for ESD protection BAS40-05W | Schottky Diodes BAS40-02L | Schottky Diodes CYPD6125-40LQXIT | EZ-PD™ CCG6 One-Port USB-C & PD Controller ESD230-B1-W0201 | Multi purpose diodes for ESD protection BAS40-05W | Schottky Diodes
- IR: 0.00002 to 0.000001 mA
- Diode Applications: Protector
- RoHS Compliant: RoHS Compliant
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Supplier: Richardson RFPD
Description: HIGH VOLTAGE SCHOTTKY DIODE. Applications: Anti-Parallel Diode, Free Wheeling Diode, Snubber Diode, Uninterruptible Power Supply (UPS), Induction Heating, High Speed Rectifiers. Features: Ultrafast Recovery Times, Soft Recovery Characteristics, Popular
- IF: 95,000 mA
- trr: 43 ns
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
- Features: Other, Rectifier Diode
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Supplier: Richardson RFPD
Description: Features Q2, Q4 CoolMOS: Ultra Low RDS(on), Low Miller capacitance, Ultra Low gate charge, Avalanche energy rated, Very rugged, Fast intrinsic diode Q1, Q3 Trench and Field Stop IGBT: Low voltage drop, Switching frequency up to 20 kHz, RBSOA &
- Features: Other
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Supplier: Infineon Technologies AG
Description: of Features Operating voltages (VS node) upto + 650 V Negative VS transient immunity of 100 V Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost High and Low Voltage Pins Separated for Maximum Creepage and Clearance Separate logic and
- Peak Output Current: 2.5 amps
- Supply Voltage: 10 to 20 volts
- Propagation Delay: 200 ns
- Driver Type: High-side Gate Driver, Low-side Gate Driver
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Supplier: Infineon Technologies AG
Description: designed with IPZ60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH20G65C5 | CoolSiC™ Schottky Diodes 2EDL8124G | Gate driver ICs BSC047N08NS3 G | N-Channel Power MOSFET IPZ60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH20G65C5 | CoolSiC™ Schottky Diodes
- rDS(on): 0.022 ohms
- TJ: -55 to 150 C
- VGS(off): 1 to 2.1 volts
- Features: MOSFET, Other, Power MOSFET
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Supplier: Richardson RFPD
Description: control over all operating conditions. Features Low RDS(ON) over temperature Low device capacitances Kelvin source pin High temperature operation (TJ = 175 C) Fast diode with ultra low reverse recovery Cost effective Benefits Improves system efficiency with lower
- Category: Development Board
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. Another type of diode is the Schottky diode, constructed from a metal-to-metal semiconductor contact and featuring a lower forward voltage drop than that of traditional P-N junction diodes. They can be used as a low-loss rectifier, but the reverse leakage current of these (read more)
Browse Diodes Datasheets for ASAP Semiconductor LLC -
Key Features: Low Forward Voltage: Typical forward voltage drop of just 0.32V at 10mA ensures high efficiency in power-sensitive applications. Fast Switching Speed: Designed for quick operation, crucial for high (read more)
Browse Diodes Datasheets for Win Source Electronics -
Vishay's 16 Gen 3 1,200 V silicon-carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) design. They also combine high surge current robustness with low forward-voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power (read more)
Browse General Purpose Diodes Datasheets for DigiKey -
capabilities Applications LED lighting Reverse battery protection Auxiliary power supply Low voltage DC/DC (read more)
Browse Power Supplies Datasheets for DigiKey -
because of their ultra-low device capacitance (as low as 0.3 pF). For maximum design flexibility these diodes are offered in both dual line DFN1006-3 and single line DFN1006BD-2. With the latter packages having side wettable flanks to enable automated optical inspection (AOI). These AEC-Q101 (read more)
Browse Electrostatic Discharge (ESD) Suppressors Datasheets for Nexperia B.V. -
-sensitive applications. WIN SOURCE provides SS16 Schottky diodes featuring low forward voltage drop, fast switching capability, and compact package designs for efficient electronic circuits. The metal-semiconductor junction structure enables rapid switching performance, making SS16 diodes suitable for (read more)
Browse Diodes Datasheets for Win Source Electronics -
The MBRS540T3G, manufactured by ON Semiconductor, is a high-performance Schottky barrier rectifier diode designed for high-frequency and energy-sensitive applications. With its low forward voltage drop and high surge current handling capacity, it offers engineers (read more)
Browse Diodes Datasheets for Win Source Electronics -
The M160UFG 16kV high voltage diode is manufactured and 100% tested in the USA. Rated at 16kV, 10mA, the M160UFG is an axial-lead hermetically sealed high (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
The MBRA340T3G is an excellent choice for engineers looking to improve circuit efficiency and reliability. With high current capacity, low voltage drop, and fast recovery, this Schottky diode is designed for high-performance applications, ensuring optimal operation in a variety of demanding fields. (read more)
Browse Diodes Datasheets for Win Source Electronics -
Discover the features and specifications of the MBRS340T3G Schottky Barrier Rectifier from ON Semiconductor, designed for efficiency and reliability in a wide range of electronic applications. This rectifier is highly favored in scenarios requiring low forward voltage drop and fast switching (read more)
Browse Diodes Datasheets for Win Source Electronics
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An integrable base drive technology for very high current bipolar transistor switches
The major losses were in the rectifying diodes ,( as shown a maximum of only 65% could be achieved with the diodes used), but these diodes can easily be replaced with ultra low voltage Schottky diodes which have an on voltage of approx …
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A 1-MHz Zero-Voltage-Switching Asymmetrical Half-Bridge DC/DC Converter: Analysis and Design
On the secondary side, to achieve a high efficiency, syn- chronous rectifiers and ultra - low forward voltage drop Schottky diodes are applied respectively.
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A Low-Power AC/DC Rectifier for Passive UHF RFID Transponders
detector-connected ultra low threshold voltage MOSFETs instead of Schottky diode .
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Ultra-efficient microwave harvesting system for battery-less micropower microcontroller platform
The RF sensitivity of our power harvester is 215.6 dBm and it is second best in Table 4 due to the combination of a highly efficient Schottky diode and an ultra - low input voltage Seiko charge-pump IC.
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An energy harvesting system for passively generating power from human activities
In the experiment, several Schottky diodes are tested and an ultra - low voltage drop (VF = 0.24 V at 10 mA dc) Schottky diode NSR0320 [20] is selected considering all the factors.
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Analysis of a novel resonant converter with series connected transformers
Thus, low - voltage rating Schottky or ultra -fast diode is used in the second side to reduce cost.
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Parallel tuned resonant DC/DC converter topologies
… as compared to pulse-width and phase-shift modulated switch mode converters), and (ii) low voltage stress across the output diodes resulting in the use of low voltape Schottky with low forward voltage drop or ultra fast diodes with low reverse recovery …
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Voltage references for ultra-low supply voltages
Schottky diodes offer a promising alternative to design ultra - low voltage references.
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Clinotron-Based Synthesized Oscillatiors for THz-Regions
It is loaded-with a high voltage rectifier, which utilizes low current SiC Schottky diodes connected in series instead of commonly used ultra -fast high voltage rectifiers.
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Matched pair of CoolMOST/sup TM/ transistor with SiC-Schottky diode-advantages in application
In the active PFC circuit (shown in Fig. 13) are used the CoolMOSTM C2 transistor (T2) and the SiC Schottky diode (compared to benchmark ultra fast diodes; one diode and series matched pair low voltage diodes).