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Supplier: ROHM Semiconductor USA, LLC
Description: RB218BM200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle
- Diode Type: Schottky Barrier Diodes
- IF: 10000 mA
- IR: 0.0100 mA
- RoHS Compliant: Yes
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Supplier: ROHM Semiconductor USA, LLC
Description: RB218NS200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle
- Diode Type: Schottky Barrier Diodes
- IF: 10000 mA
- IR: 0.0100 mA
- RoHS Compliant: Yes
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Supplier: ROHM Semiconductor USA, LLC
Description: RB088NS200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle
- Diode Type: Schottky Barrier Diodes
- IF: 5000 mA
- IR: 0.0070 mA
- RoHS Compliant: Yes
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Supplier: ROHM Semiconductor USA, LLC
Description: RB088BM200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle
- Diode Type: Schottky Barrier Diodes
- IF: 5000 mA
- IR: 0.0070 mA
- RoHS Compliant: Yes
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Supplier: Solid State Devices, Inc.
Description: FEATURES: Optimized for 2.1V and 3.3V output power supplies. The SUPER SCHOTTKY series has been designed to provide ultra low forward voltage drops at low operating temperatures of 75°C. Low VF, typically 380mV (per leg) at 75°C Low reverse leakage
- Diode Type: Schottky Barrier Diodes
- VF: 0.5700 volts
- VR: 35 volts
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Supplier: Solid State Devices, Inc.
Description: FEATURES: Optimized for 2.1V and 3.3V output power supplies. The SUPER SCHOTTKY series has been designed to provide ultra low forward voltage drops at low operating temperatures of 75°C. Low VF, typically 380mV (per leg) at 75°C Low reverse leakage
- Diode Type: Schottky Barrier Diodes
- VF: 0.5700 volts
- VR: 25 volts
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Supplier: Solid State Devices, Inc.
Description: FEATURES: Optimized for 2.1V and 3.3V output power supplies. The SUPER SCHOTTKY series has been designed to provide ultra low forward voltage drops at low operating temperatures of 75°C. Low VF, typically 380mV (per leg) at 75°C Low reverse leakage
- Diode Type: Schottky Barrier Diodes
- VF: 0.5700 volts
- VR: 25 volts
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Supplier: Solid State Devices, Inc.
Description: FEATURES: Optimized for 2.1V and 3.3V output power supplies. The SUPER SCHOTTKY series has been designed to provide ultra low forward voltage drops at low operating temperatures of 75°C. Low VF, typically 380mV (per leg) at 75°C Low reverse leakage
- Diode Type: Schottky Barrier Diodes
- VF: 0.5700 volts
- VR: 35 volts
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Supplier: Infineon Technologies AG
Description: Silicon Schottky Diode Summary of Features For low-loss, fast-recovery, meter protection,bias isolation and clamping application Guard ring protected Low forward voltage Pb-free (RoHS compliant) package Applications
- Diode Type: Schottky Barrier Diodes
- IF: 200 mA
- RoHS Compliant: Yes
- VF: 0.8000 volts
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Supplier: Nexperia B.V.
Description: Planar Schottky barrier diode with an integrated guard ring for stress protection encapsulated in a SOD882 leadless ultra small plastic package. Features and benefits Forward current: 0.5 A Reverse voltage: 20 V Ultra low forward voltage Leadless
- Applications: Rectifier Diode, Switching
- IF: 500 mA
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Nexperia B.V.
Description: Planar Schottky barrier diode with an integrated guard ring for stress protection encapsulated in a SOD882 leadless ultra small plastic package. Features and benefits Forward current: 0.5 A Reverse voltage: 20 V Ultra low forward voltage Leadless
- Applications: Rectifier Diode, Switching
- IF: 500 mA
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: ROHM Semiconductor GmbH
Description: RB218BM200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle
- Diode Type: Schottky Barrier Diodes
- IF: 10000 mA
- RoHS Compliant: Yes
- VF: 0.8800 volts
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Supplier: ROHM Semiconductor GmbH
Description: RB088NS200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle
- Diode Type: Schottky Barrier Diodes
- IF: 5000 mA
- RoHS Compliant: Yes
- VF: 0.8800 volts
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Supplier: ROHM Semiconductor GmbH
Description: RB218NS200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle
- Diode Type: Schottky Barrier Diodes
- IF: 10000 mA
- RoHS Compliant: Yes
- VF: 0.8800 volts
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Supplier: ROHM Semiconductor GmbH
Description: RB088BM200FH is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in
- Diode Type: Schottky Barrier Diodes
- IF: 5000 mA
- RoHS Compliant: Yes
- VF: 0.8800 volts
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Supplier: Nexperia B.V.
Description: Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in small and flat lead SOD323F (SC-90) SMD plastic package. Features and benefits Forward current: = 1.5 A Reverse voltage: = 30 V Ultra low
- Applications: Rectifier Diode, Switching
- IF: 1500 mA
- Package Type: SOD-323, Other
- RoHS Compliant: Yes
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Supplier: Nexperia B.V.
Description: Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in small and flat lead SOD123F SMD plastic package. Features and benefits Forward current: = 1.5 A Reverse voltage: = 30 V Ultra low forward
- Applications: Rectifier Diode, Switching
- IF: 1500 mA
- Package Type: SOD-123, Other
- RoHS Compliant: Yes
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Supplier: Littelfuse, Inc.
Description: Littelfuse DST series Ultra Low VF Schottky Barrier Rectifier is designed to meet the general requirements of commercial and industry applications by providing high temperature, low leakage and lower VF products.It is suitable for high frequency switching mode power
- Diode Type: Schottky Barrier Diodes
- IF: 5000 mA
- VF: 1.6 volts
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Supplier: Littelfuse, Inc.
Description: Littelfuse DST series Ultra Low VF Schottky Barrier Rectifier is designed to meet the general requirements of commercial and industry applications by providing high temperature, low leakage and lower VF products.It is suitable for high frequency switching mode power
- IF: 5000 mA
- IFSM: 120 amps
- Package Type: TO-220, Other
- VF: 1.6 volts
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Supplier: Richardson RFPD
Description: HIGH VOLTAGE SCHOTTKY DIODE. Applications: Anti-Parallel Diode, Free Wheeling Diode, Snubber Diode, Uninterruptible Power Supply (UPS), Induction Heating, High Speed Rectifiers. Features: Ultrafast Recovery Times, Soft Recovery Characteristics, Popular
- IF: 95000 mA
- Package Type: Other
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
- trr: 43 ns
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Supplier: RS Components, Ltd.
Description: High efficiency. Ultra-small, low-profile surface-mount packages. Optimized for Low forward voltage drop and high junction temperature. Low capacitance. Negligible power switching losses. Low leakage current Maximum Continuous Forward Current = 30mA
- Applications: Rectifier Diode
- IF: 30 mA
- Package Type: Other
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Supplier: RS Components, Ltd.
Description: High efficiency. Ultra-small, low-profile surface-mount packages. Optimized for Low forward voltage drop and high junction temperature. Low capacitance. Negligible power switching losses. Low leakage current Diode Configuration = Single Maximum
- Diode Applications: Rectifier Diode
- Diode Type: Schottky Barrier Diodes
- IF: 5000 mA
- VR: 30 volts
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Supplier: RS Components, Ltd.
Description: High efficiency. Ultra-small, low-profile surface-mount packages. Optimized for Low forward voltage drop and high junction temperature. Low capacitance. Negligible power switching losses. Low leakage current Maximum Continuous Forward Current = 30mA
- Diode Applications: Rectifier Diode
- Diode Type: Schottky Barrier Diodes
- IF: 30 mA
- Package Type: Other
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Supplier: RS Components, Ltd.
Description: High efficiency. Ultra-small, low-profile surface-mount packages. Optimized for Low forward voltage drop and high junction temperature. Low capacitance. Negligible power switching losses. Low leakage current Maximum Continuous Forward Current = 2A
- IF: 2000 mA
- Package Type: Other
- Rectifier Configuration / Technology: Schottky
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Supplier: Infineon Technologies AG
Description: temperature and voltage conditions. Summary of Features Operating voltages (VS node) upto + 650 V Negative VS transient immunity of 100 V Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost High and Low Voltage Pins Separated for
- Driver Type: High-side Gate Driver, Low-side Gate Driver
- IC Package Type: Other
- Packing Method: Tape Reel
- Peak Output Current: 2.5 amps
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Supplier: Richardson RFPD
Description: Features High speed IGBT4 Low voltage drop Low leakage current Low switching losses SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior
- Package Type: Other
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Supplier: Richardson RFPD
Description: Features High speed IGBT4 Low voltage drop Low leakage current Low switching losses SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: Monolithically integrated Schottky-like diode Ultra low charges Ideal for high performance applications RoHS compliant - halogen free Key benefits Highest efficiency Less paralleling required Very low voltage overshoot Reduced
- Package Type: Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
- TJ: -55 to 150 C
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Supplier: Infineon Technologies AG
Description: new fast regulation concept requires only a single, 1 µF output capacitor to maintain stable regulation. Summary of Features Output Voltage 3.3 V Output Voltage Precision ± 2 % Output Current up to 400 mA Ultra Low Current Consumption 38
- IC Package Type: Other
- Operating Temperature: -40 to 150 C
- Output Voltage (Volt): 3.3 volts
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Supplier: Richardson RFPD
Description: Carbide MOSFETs (C3M0040120K) and 650V C6D Silicon Carbide Schottky Diodes (C6D20065D and C6D10065A). A 3-phase interleaved LLC topology is implemented to provide low input current ripple and high efficiency for EV high power fast charger. Discrete power devices offer cost
- Category: Development Board
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. Another type of diode is the Schottky diode, constructed from a metal-to-metal semiconductor contact and featuring a lower forward voltage drop than that of traditional P-N junction diodes. They can be used as a low-loss rectifier, but the reverse leakage current of these (read more)
Browse Diodes Datasheets for ASAP Semiconductor LLC -
Key Features: Low Forward Voltage: Typical forward voltage drop of just 0.32V at 10mA ensures high efficiency in power-sensitive applications. Fast Switching Speed: Designed for quick operation, crucial for high (read more)
Browse Diodes Datasheets for Win Source Electronics -
Vishay's 16 Gen 3 1,200 V silicon-carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) design. They also combine high surge current robustness with low forward-voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power (read more)
Browse General Purpose Diodes Datasheets for DigiKey -
capabilities Applications LED lighting Reverse battery protection Auxiliary power supply Low voltage DC/DC (read more)
Browse Power Supplies Datasheets for DigiKey -
because of their ultra-low device capacitance (as low as 0.3 pF). For maximum design flexibility these diodes are offered in both dual line DFN1006-3 and single line DFN1006BD-2. With the latter packages having side wettable flanks to enable automated optical inspection (AOI). These AEC-Q101 (read more)
Browse Electrostatic Discharge (ESD) Suppressors Datasheets for Nexperia B.V. -
The MBRS540T3G, manufactured by ON Semiconductor, is a high-performance Schottky barrier rectifier diode designed for high-frequency and energy-sensitive applications. With its low forward voltage drop and high surge current handling capacity, it offers engineers (read more)
Browse Diodes Datasheets for Win Source Electronics -
products that are 5V or below. When these systems fail or are interrupted, operations may be significantly impacted. These ultra-low-voltage designs are increasingly used in a variety of applications, including industrial IoT (IIoT), banking, transportation, and power systems. Low-voltage (read more)
Browse Datasheets for Advanced Linear Devices, Inc. -
The M160UFG 16kV high voltage diode is manufactured and 100% tested in the USA. Rated at 16kV, 10mA, the M160UFG is an axial-lead hermetically sealed high (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
The MBRA340T3G is an excellent choice for engineers looking to improve circuit efficiency and reliability. With high current capacity, low voltage drop, and fast recovery, this Schottky diode is designed for high-performance applications, ensuring optimal operation in a variety of demanding fields. (read more)
Browse Diodes Datasheets for Win Source Electronics -
Discover the features and specifications of the MBRS340T3G Schottky Barrier Rectifier from ON Semiconductor, designed for efficiency and reliability in a wide range of electronic applications. This rectifier is highly favored in scenarios requiring low forward voltage drop and fast switching (read more)
Browse Diodes Datasheets for Win Source Electronics
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An integrable base drive technology for very high current bipolar transistor switches
The major losses were in the rectifying diodes ,( as shown a maximum of only 65% could be achieved with the diodes used), but these diodes can easily be replaced with ultra low voltage Schottky diodes which have an on voltage of approx …
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A 1-MHz Zero-Voltage-Switching Asymmetrical Half-Bridge DC/DC Converter: Analysis and Design
On the secondary side, to achieve a high efficiency, syn- chronous rectifiers and ultra - low forward voltage drop Schottky diodes are applied respectively.
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A Low-Power AC/DC Rectifier for Passive UHF RFID Transponders
detector-connected ultra low threshold voltage MOSFETs instead of Schottky diode .
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Ultra-efficient microwave harvesting system for battery-less micropower microcontroller platform
The RF sensitivity of our power harvester is 215.6 dBm and it is second best in Table 4 due to the combination of a highly efficient Schottky diode and an ultra - low input voltage Seiko charge-pump IC.
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An energy harvesting system for passively generating power from human activities
In the experiment, several Schottky diodes are tested and an ultra - low voltage drop (VF = 0.24 V at 10 mA dc) Schottky diode NSR0320 [20] is selected considering all the factors.
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Analysis of a novel resonant converter with series connected transformers
Thus, low - voltage rating Schottky or ultra -fast diode is used in the second side to reduce cost.
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Parallel tuned resonant DC/DC converter topologies
… as compared to pulse-width and phase-shift modulated switch mode converters), and (ii) low voltage stress across the output diodes resulting in the use of low voltape Schottky with low forward voltage drop or ultra fast diodes with low reverse recovery …
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Voltage references for ultra-low supply voltages
Schottky diodes offer a promising alternative to design ultra - low voltage references.
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Clinotron-Based Synthesized Oscillatiors for THz-Regions
It is loaded-with a high voltage rectifier, which utilizes low current SiC Schottky diodes connected in series instead of commonly used ultra -fast high voltage rectifiers.
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Matched pair of CoolMOST/sup TM/ transistor with SiC-Schottky diode-advantages in application
In the active PFC circuit (shown in Fig. 13) are used the CoolMOSTM C2 transistor (T2) and the SiC Schottky diode (compared to benchmark ultra fast diodes; one diode and series matched pair low voltage diodes).