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Description: AMPLIFIER - ULTRA WIDEBAND
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Supplier: Custom MMIC
Description: The CMD233C4 is a wideband GaAs MMIC low noise amplifier housed in a leadless 4x4 mm surface mount (SMT) package. The CMD233C4 is ideally suited for military, space, and communications systems where small size and low noise figure are needed over a wide bandwidth. At 10 GHz this
- Amplifier Type: Low Noise Amplifier
- Applications: Military / Defense, Radar Systems, SATCOM Amplifier, Terrestrial RF/Microwave Systems
- Frequency Range: 2000 to 20000 MHz
- MMIC Technology Required: Yes
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Description: AMPLIFIER,ULTRA WIDE-BAND DC-40
- Frequency Range: 0.0 to 50000 MHz
- Maximum Gain: 15.5 dB
- Minimum Gain: Up to 15.5 dB
- Package Type: Other
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Supplier: ValueTronics International, Inc.
Description: : Unconditional (within performance ratings) The 603L Broadband Power Amplifier is an ultra wideband, class A, solid state amplifier that is capable of delivering over 3 watts of power with a flat frequency response from 800 kHz to 1 GHz. It will accept CW, AM, FM, SSB,
- Frequency Range: 1000 MHz
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Supplier: Richardson RFPD
Description: Skyworks SKY65095-360LF is a high performance, ultra-wideband Power Amplifier (PA) driver with superior output power, low noise, and linearity. The device provides excellent Noise Figure (NF) and high output power at 1 dB compression, which makes the SKY65095-360LF ideal for use in the
- Amplifier Type: Power Amplifier
- Frequency Range: 1600 to 2100 MHz
- Maximum Gain: 15 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Custom MMIC
Description: The CMD173 is wideband GaAs MMIC distributed amplifier die which operates from DC to 20 GHz. The amplifier delivers greater than 15 dB of gain with a corresponding output 1 dB compression point of +18 dBm and noise figure of 2 dB at 10 GHz. The CMD173 amplifier is a 50
- Amplifier Type: Low Noise Amplifier, Other
- Frequency Range: 20000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 15 dB
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Supplier: Custom MMIC
Description: The CMD244 is wideband GaAs MMIC distributed amplifier die which operates from DC to 24 GHz. The amplifier delivers 18 dB of gain with a corresponding output of 1 dB compression point of +25 dBm and noise figure of 2.5 dB at 10 GHz. The CMD244 is a 50 ohm matched design which
- Amplifier Type: Low Noise Amplifier, Other
- Frequency Range: 24000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 18 dB
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Supplier: Custom MMIC
Description: The CMD192 is wideband GaAs MMIC distributed driver amplifier die which operates from DC to 20 GHz. The amplifier delivers greater than 19 dB of gain with a corresponding output 1 dB compression point of +24.5 dBm and a noise figure of 1.9 dB at 10 GHz. The CMD192 LNA is a 50
- Amplifier Type: Low Noise Amplifier, Other
- Frequency Range: 20000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 19.5 dB
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Supplier: Qorvo
Description: The QPL1823 is an ultra-linear, GaAs pHEMT, differential RF amplifier. The device features a cascode design which provides 26 dB of flat gain along with very low distortion from 5 MHz to 1.8 GHz. This ultra-linear IC is designed to support Broadband CATV DOCSIS 4.0
- Device Type: Video / Wideband Amplifiers
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Qorvo
Description: The QPL1822 is an ultra-linear, GaAs pHEMT, differential RF amplifier. The device features a cascode design which provides 15 dB of gain along with very low distortion from 5 MHz to 1.8 GHz. This ultra-linear IC is designed to support Broadband CATV DOCSIS 4.0
- Device Type: Video / Wideband Amplifiers
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Qorvo
Description: The QPL1821 is an ultra-linear, GaAs pHEMT, differential RF amplifier. The device features a cascode design which provides 19 dB of flat gain along with very low distortion from 5 MHz to 1.8 GHz. This ultra-linear IC is designed to support Broadband CATV DOCSIS 4.0
- Device Type: Video / Wideband Amplifiers
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Qorvo
Description: The QPL1820 is an ultra-linear, GaAs pHEMT, differential RF amplifier. The device features a cascode design which provides 22 dB of flat gain along with very low distortion from 5 MHz to 1.8 GHz. This ultra-linear IC is designed to support Broadband CATV DOCSIS 4.0
- Device Type: Video / Wideband Amplifiers
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Richardson RFPD
Description: SKY65162-70LF: 400-2700 MHz Linear Power Amplifier. Skyworks SKY65162-70LF is a high performance, ultra-wideband Power Amplifier (PA) with superior output power, low noise, high linearity, and high efficiency. The device provides excellent linearity with a 1 dB Output
- Frequency Range: 400 to 2700 MHz
- Maximum Gain: 24 dB
- Noise Figure: 3.6 dB
- Output Intercept Point (IP3): 40 dBm
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Supplier: Richardson RFPD
Description: Skyworks SKY65094-360LF is a high performance, ultra-wideband Power Amplifier (PA) driver with superior output power, low noise, and linearity. The device provides excellent Noise Figure (NF) and high output power at 1 dB compression, which makes the SKY65094-360LF ideal for use in the
- Frequency Range: 698 to 915 MHz
- Maximum Gain: 17 dB
- Noise Figure: 3 dB
- Output Intercept Point (IP3): 28.8 dBm
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Supplier: Richardson RFPD
Description: The GRF5020 is a high linearity PA with ultra-low noise figure (NF). Wideband tunes deliver excellent P1dB, IP3 and NF over the various bands. The device can be tuned to deliver outstanding performance over 0.01 GHz to 6.0 GHz with fractional bandwidths >30%. In addition to use as a PA
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 100 to 3800 MHz
- Maximum Gain: 17.5 dB
- Maximum Operating Voltage: 8 volts
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65080-70LF is being discontinued and is not recommended for new designs. Skyworks SKY65080-70LF is a high performance, ultra-wideband Power Amplifier (PA) driver with superior output power, low noise, linearity, and efficiency. The device provides a 2.3 dB Noise Figure
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 1500 to 2500 MHz
- Maximum Gain: 15 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65081-70LF is being discontinued and is not recommended for new designs. Skyworks SKY65081-70LF is a high performance, ultra-wideband Power Amplifier (PA) driver with superior output power, low noise, linearity, and efficiency. The device provides a 2.0 dB Noise Figure
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 2000 to 3000 MHz
- Maximum Gain: 14.3 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Skyworks Solutions, Inc.
Description: Skyworks SKY65162-70LF is a high-performance, ultra-wideband power amplifier (PA) with superior output power, low noise, high linearity, and high efficiency. The device provides excellent linearity with a 1 dB output compression point (OP1dB) of +29.5 dBm at 1960 MHz, making the
- Amplifier Type: Power Amplifier
- Frequency Range: 400 to 2700 MHz
- Maximum Gain: 20 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65009-70LF is being discontinued and is not recommended for new designs. The suggested replacement is SKY65162-70LF The SKY65009-70LF is a high performance, ultra-wideband PA driver with superior output power, linearity, and efficiency. The high linearity and superior ACPR
- Amplifier Type: Power Amplifier
- Frequency Range: 250 to 2500 MHz
- Maximum Gain: 12 dB
- Maximum Operating Voltage: 5 volts
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Supplier: ValueTronics International, Inc.
Description: The PAM-840A is a 40 GHz preamplifier from Com-Power. Features: Ultra Wideband: 18 GHz to 40 GHz High Gain: 37 dB (Typical) Flat Response: ± 2.5 dB Low Noise Figure: 5 dB max Pout @ 1 dB Gain Compression: +10 d
- Frequency Range: 40000 MHz
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Supplier: RS Components, Ltd.
Description: A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineonâ??s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is
- IC(max): 80 milliamps
- PD: 185 milliwatts
- Package Type: Other
- Polarity: NPN
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Supplier: RS Components, Ltd.
Description: A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineonâ??s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is
- IC(max): 50 milliamps
- PD: 200 milliwatts
- Package Type: Other
- Polarity: NPN
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Supplier: RS Components, Ltd.
Description: A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineonâ??s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is
- IC(max): 45 milliamps
- PD: 160 milliwatts
- Package Type: Other
- Polarity: NPN
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Supplier: RS Components, Ltd.
Description: A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineonâ??s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is
- IC(max): 45 milliamps
- PD: 160 milliwatts
- Package Type: Other
- Polarity: NPN
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Supplier: ValueTronics International, Inc.
Description: packages. Agilent is also the industry-leading vendor to offer innovative packages for ultra-wideband vector signal analysis, noise reduction and bandwidth control, and InfiniiScan event identification software. The industry-leading signal integrity, probing and software application
- Bandwidth: 6000 MHz
- Number of Input Channels: 4 (# channels)
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The MAAL-011151 is an easy to use, wideband low noise distributed amplifier in a lead-free 5 mm 32-lead PQFN package. It operates from 2 to 18 GHz and provides 15 dB of linear gain, 19 dBm of P1dB, and 3.5 dB of noise figure at 10 GHz. The input and output are fully matched to 50 Ω with (read more)
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the final RF amplifier in GSM hand-held equipment in 900 MHz band and other applications in the UHF bands. An analog on-board power controller provides over 70 dB range of gain adjustment. This control also allows for power down with a voltage equal to the logic “Low” to set the device (read more)
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Gain-Bandwidth Properties of 0.18μm Si-CMOS Transistor up to 10 GHz
In this work, SRFT is employed to design Ultra Wideband RF Amplifiers which in turn provides the practical gain bandwidth limitation ofthe active device (')Dr.
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Design of a 10W, highly linear, ultra wideband power amplifier based on GaN HEMT
Modern communication and military electronic systems employing a large portion of the frequency spectrum require broadband amplification circuits; this has triggered an increasing demand for high power ultra wideband RF amplifiers as part of the next generation base station transmitters.
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A 132 Mb/s, 1bit 4224 M samples/s sub-sampling, low-complexity and energy-efficient BPSK transceiver for all-digital 3–5 GHz IR-UWB
Transistor M22, inductor L2 and capacitor C5 realize an ultra - wideband RF amplifier [14].
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Determining transmission zeroes of the general Chebyshev filter
Key words: low noise; ultra wideband ; RF amplifier ; LNA .
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Simultaneous noise and input matched ultra wide band LNA design
Key words: low noise; ultra wideband ; RF amplifier ; LNA .
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Gain-Bandwidth Limitations of 0.18μm Si-CMOS RF technology
It is exhibited that 0.18 mum Si CMOS processing technology can safely be utilized to manufacture ultra wideband RF - amplifiers for commercial wireless communication systems placed silicon chips up to X-Band.
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CMOS Programmable Gain Distributed Amplifier With 0.5-dB Gain Steps
Index Terms—Automatic test equipment (ATE), broadband am- plifiers, built-in self-test, distributed amplifiers, gain control, mi- crowave amplifiers, RF amplifiers , ultra - wideband (UWB) tech- nology.
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Information-based complexity of uncertainty sets in feedback control
From 1998 to 2000, he was an Engineering Manager at Ericsson (MPD Technologies), Hauppauge, NY, responsible for the development of ultra -linear wideband RF power amplifiers .
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A 5–9 GHz CMOS Ultra-wideband power amplifier design using load-pull
[4] S.Wong, F. Kung, S. Maisurah and M. N. B. Osman “A Wimedia Compliant CMOS RF Power Amplifier For Ultra - Wideband (UWB) Transmitter,” Progress In Electromagnetics Research (PIER), pp.329- 347, January 2011.
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Analysis and Design of a CMOS Low Noise Amplifier for 3-5 GHz UWB Systems
Index Terms - Broadband, CMOS, Feedback, Low noise amplifier , RF , Ultra - wideband resistor helps to extend the bandwidth of the amplifier as well as the gain flatness, while contributing a small amount in NF degradation.