Products & Services
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Supplier: Hamamatsu Photonics Europe
Description: High-speed response (1 GHz) The S5973 is a high-speed Si PIN photodiode designed for visible to near infrared light detection. This photodiode provides wideband characteristics at a low bias, making them suitable for optical communications and other high-speed
- Sensitivity: 0.51 A/W
- Spectral Response Range: 320 to 1,000 nm
- Active Area Diameter or Length: 0.4000000000000001 mm
- Active Area Height: 0.4000000000000001 mm
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Supplier: OSI Optoelectronics
Description: circuit on the opposite page represents a typical biasing and detection circuit set up for both bi-cells and quad-cells. For position calculations and further details, refer to "Photodiode Characteristics" section of the catalog. Product Applications Pulse Detectors Optical
- Sensitivity: 0.65 A/W
- Spectral Response Range: 350 to 1,100 nm
- Active Area Diameter or Length: 10.000000000000002 mm
- Rise Time: 3 ns
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Supplier: OSI Optoelectronics
Description: FCI-H125G-10 A low noise, high bandwidth photodetector plus transimpedance amplifier designed for short wavelength (850nm) high speed fiber optic data communications. The hybrid incorporates a 250µm diameter large sensing area, high sensitivity silicon photodetector. It also includes a high
- Spectral Response Range: 1,100 to 1,650 nm
- Active Area Diameter or Length: 0.25 mm
- Operating Temperature: -40 to 75 C
- Photodiode Spectral Response: IR, Visible
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Supplier: Marktech Optoelectronics
Description: Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for applications such as optical switching and sensing requiring high speed, consistency and high reliability. Marktech manufactured InP Pin Photo
- Active Area Diameter or Length: 0.30000000000000004 mm
- Photodiode Material: Indium Gallium Arsenide
- Features: Other
- Photodiode Type: PIN Photodiode
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Supplier: Marktech Optoelectronics
Description: suited for visible and near IR applications requiring high speed and high sensitivity as well as low noise such as optical switches and optical communications. Marktech silicon detectors can be obtained with integrated filters for reduced visible light interference or
- Active Area Diameter or Length: 5.000000000000001 mm
- Features: Other
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible
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Supplier: DigiKey
Description: Photodiode 660nm 50ns 40° Radial, 5mm Dia (T 1 3/4)
- Spectral Response Range: 400 to 1,100 nm
- Rise Time: 50 ns
- Operating Temperature: -40 to 80 C
- Dark Current: 5 nA
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Supplier: RS Components, Ltd.
Description: Photo IC Diode - In-built Amplifier
- Spectral Response Range: 300 to 1,000 nm
- Features: Other
- Photodiode Spectral Response: Visible
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Supplier: Electro Optical Components, Inc.
Description: EOC offers a variety of silicon photodiode options from IFW Optronics: Silicon Photodiodes with an Integrated Low Noise JFET Amplifier Quadrant Photodiodes
- Spectral Response Range: 400 to 1,100 nm
- Active Area Diameter or Length: 2.5000000000000004 to 7.900000000000001 mm
- Photodiode Spectral Response: IR, Visible
- Photodiode Package: Leaded, Through Hole Technology (THT)
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Supplier: DigiKey
Description: TO-18 PHOTOCELL (CDS PHOTORESIST
- Operating Temperature: -60 to 75 C
- Features: Other
- Photodiode Package: Through Hole Technology (THT)
- Photodiode Spectral Response: Visible
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Supplier: Electro Optical Components, Inc.
Description: EOC offers a variety of silicon photodiode options from IFW Optronics: Silicon Photodiodes with an Integrated Low Noise JFET Amplifier Quadrant Photodiodes
- Spectral Response Range: 400 to 1,100 nm
- Active Area Diameter or Length: 4.800000000000001 to 7.000000000000001 mm
- Photodiode Spectral Response: IR, Visible
- Photodiode Package: Leaded, Through Hole Technology (THT)
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Supplier: Electro Optical Components, Inc.
Description: Quadrant photodiodes are used for a variety of alignment applications including laser beams and position sensing. They are available in 2.5, 5.0 and 7.9 mm diameter active areas. Quadrant Photodetector Features Si-PIN photodiode Spectral range 400 – 1100 nm Hermetic sealed in TO-8
- Spectral Response Range: 400 to 1,100 nm
- Active Area Diameter or Length: 2.5000000000000004 to 7.900000000000001 mm
- Photodiode Spectral Response: IR, Visible
- Photodiode Package: Leaded, Through Hole Technology (THT)
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Supplier: Ophir-Spiricon Inc.
Description: General use for large aperture pulsed lasers
- Spectral Response Range: 150 to 20,000 nm
- Active Area Diameter or Length: 46.00000000000001 mm
- Photodiode Spectral Response: IR, UV, Visible
- Features: Other
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Supplier: Universal Semiconductor, Inc.
Description: Double diffused silicon diode, extruded aluminum housing
- Spectral Response Range: 400 to 1,170 nm
- Active Area Diameter or Length: 152.39991770404444 mm
- Rise Time: 500 ns
- Dark Current: 12,000 nA
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Supplier: Micropac Industries, Inc.
Description: The 61055 is an N-P-N Planar Silicon Transistor in a package designed to be mounted in a double-clad printed circuit board. It is available in a range of sensitivities and is lensed for minimum response to stray light. High sensitivity, low dark current leakage, and low saturation voltage
- Sensitivity: 100 A/W
- Spectral Response Range: 290 to 1,200 nm
- Operating Temperature: -55 to 125 C
- Dark Current: 25 nA
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Supplier: First Sensor AG
Description: Due to their high gain and speed, these APDs are suitable for many industrial applications such as distance measurement, laser scanning and optical communication. Special features Maximum sensitivity at 800 nm Optimized for high speeds Low temperature coefficient Fast rise time Potentially
- Spectral Response Range: 750 to 820 nm
- Active Area Diameter or Length: 0.5 mm
- Rise Time: 0.35 ns
- Dark Current: 0.5 to 1 nA
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Supplier: Opto Diode Corporation, an ITW Company
Description: Opto Diode offers high quality standard and custom photodiodes. We have a large variety of standard devices featuring low dark current and low capacitance. For responsivity between 400 -1100 nm, Opto Diode has the perfect photodiode for your application. For more information about
- Sensitivity: 0.36 to 0.4 A/W
- Active Area Diameter or Length: 1.35 to 0.76 mm
- Rise Time: 8 to 15 ns
- Operating Temperature: -55 to 100 C
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Supplier: PREMA Semiconductor GmbH
Description: 3 compact Silicon Junctions on a single Die PR5020 and PR50221 are triple silicon photodiodes with three separate cathodes and one common anode. Therefore, the three segments allow to resolve two transitions. With a wider and thinner photodiode in the center of the die, the PR5020 and
- Sensitivity: 0.58 A/W
- Operating Temperature: -40 to 85 C
- Dark Current: 0.052 nA
- Photodiode Spectral Response: IR, Visible
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Supplier: Photonique SA
Description: No Description Provided
- Spectral Response Range: 350 to 800 nm
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Rise Time: 1.8 ns
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Supplier: Universal Semiconductor, Inc.
Description: Dual axis type, diffused junction technology
- Spectral Response Range: 400 to 1,170 nm
- Active Area Diameter or Length: 11.280000000000001 mm
- Rise Time: 2,000 ns
- Dark Current: 2,000 nA
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Supplier: Ophir-Spiricon Inc.
Description: Automatic dynamic cancellation of up to 98% of background light
- Spectral Response Range: 200 to 1,100 nm
- Active Area Diameter or Length: 10.000000000000002 mm
- Active Area Height: 10.000000000000002 mm
- Rise Time: 200,000,000 ns
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Supplier: Opto Diode Corporation, an ITW Company
Description: Opto Diode offers high quality standard and custom photodiodes. We have a large variety of standard devices featuring low dark current and low capacitance. For responsivity between 400 -1100 nm, Opto Diode has the perfect photodiode for your application. For more information about
- Sensitivity: 0.35 to 0.4 A/W
- Active Area Diameter or Length: 6.27 to 2.52 mm
- Rise Time: 20 ns
- Operating Temperature: -55 to 100 C
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Supplier: Photonique SA
Description: No Description Provided
- Spectral Response Range: 350 to 950 nm
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Rise Time: 5 ns
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Supplier: First Sensor AG
Description: With a quantum yield > 70% at 400 nm and maximum sensitivity at 600 nm, these components are particularly suited to biomedical applications. Special features High quantum yield at short wavelengths High gain Low capacitance Fast rise times
- Spectral Response Range: 350 to 750 nm
- Active Area Diameter or Length: 0.8000000000000002 mm
- Rise Time: 1 ns
- Dark Current: 1 to 5 nA
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Supplier: OSRAM Opto Semiconductors
Description: Ambient light sensor with perfect V-lambda characteristic in Metal Can
- Spectral Response Range: 350 to 820 nm
- Active Area Diameter or Length: 2.7300000000000004 mm
- Active Area Height: 2.7300000000000004 mm
- Photodiode Package: Leaded
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Supplier: PREMA Semiconductor GmbH
Description: Single Photodiode with identical Outer Dimensions PR5040 is a single silicon photodiode with rectangular shape having the same outer dimensions as the segmented types PR5001-PR5030. The photodiode has a low dark current combined with a high sensitivity. The dies are moulded into
- Photodiode Spectral Response: IR, Visible
- Photodiode Type: PN Photodiode
- Photodiode Material: Silicon
- Photodiode Package: Surface Mount Technology (SMT)
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now
- Active Area Diameter or Length: 8.254995542302408 mm
- Operating Temperature: -25 to 100 C
- Photodiode Spectral Response: IR, Visible
- Photodiode Package: Leaded
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Supplier: First Sensor AG
Description: Due to their high gain and speed, these APDs are suitable for many industrial applications such as distance measurement, laser scanning and optical communication. Special features Maximum sensitivity at 800 nm Optimized for high speeds Low temperature coefficient Fast rise time Potentially
- Spectral Response Range: 650 to 850 nm
- Active Area Diameter or Length: 0.5 mm
- Rise Time: 0.35 ns
- Dark Current: 0.5 to 1 nA
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Supplier: PREMA Semiconductor GmbH
Description: Two differential pairs of photodiodes with amplifiers The optical sensor IC PR5401 consists of two pairs of photodiodes placed in opposite quadrants with differential amplifiers. If illuminated uniformly, the output is Vcc/2, but depends on the balance of illumination on each pair.
- Spectral Response Range: 950 nm
- Operating Temperature: -40 to 85 C
- Array: Array
- Photodiode Spectral Response: IR, Visible
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Supplier: Photonique SA
Description: No Description Provided
- Spectral Response Range: 310 to 850 nm
- Active Area Diameter or Length: 2.1 mm
- Active Area Height: 2.1 mm
- Rise Time: 0.6 ns
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Supplier: Ophir-Spiricon Inc.
Description: Thermal head for medium power to 300 W
- Spectral Response Range: 400 to 10,600 nm
- Active Area Diameter or Length: 50 mm
- Rise Time: 2,500,000,000 ns
- Photodiode Spectral Response: IR, Visible
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Supplier: Opto Diode Corporation, an ITW Company
Description: Opto Diode offers high quality standard and custom photodiodes. We have a large variety of standard devices featuring low dark current and low capacitance. For responsivity between 400 -1100 nm, Opto Diode has the perfect photodiode for your application. For more information about
- Sensitivity: 0.35 to 0.4 A/W
- Active Area Diameter or Length: 2.52 mm
- Rise Time: 10 ns
- Operating Temperature: -55 to 100 C
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Supplier: First Sensor AG
Description: PIN photodiodes with enhanced sensitivity in blue and green spectral range. Features: Low capacitance Very low dark current Long-term stability of detection properties
- Spectral Response Range: 400 to 650 nm
- Active Area Diameter or Length: 3.5000000000000004 mm
- Rise Time: 50 ns
- Dark Current: 0.25 nA
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Featured Products Top
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Hamamatsu Photonics is pleased to introduce the G15978-0020P, an exciting new InGaAs photodiode that redefines the possibilities in compact sensor technology. Designed specifically for researchers, engineers, and industrial applications, this new photodiode is ideally suited for accurate (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics Europe -
built-in monitor photodiode for power control and feedback applications. Features Visible red output: 675 nm (typ.) High optical output power: 210 m (read more)
Browse Diode Lasers Datasheets for World Star Tech -
Hamamatsu Photonics is pleased to introduce the G15978-0020P, an exciting new InGaAs Avalanche Photodiode that redefines the possibilities in compact sensor technology. Designed specifically for researchers, engineers, and industrial applications, this new photodiode is ideally suited for (read more)
Browse Avalanche Diodes Datasheets for Hamamatsu Photonics Europe -
devices as well as high-speed optical communications. Photodiodes have wide, transparent junctions as they operate in reversed bias where minimal amounts of current flow. They are used to detect light and are found in solar cells, photometry, and in optical communications or to generate electricity (read more)
Browse Diodes Datasheets for ASAP Semiconductor LLC -
) High refractive index, impervious to visible light Infrared PBS, thermal imaging systems (read more)
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High-Performance Tunable Filters for Precision Optical Control In fields like hyperspectral imaging, optical communications, and laser tuning, engineers face the challenge of achieving fast (read more)
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Particle counter Leveler Machine Vision LiDAR Biomedical equipment Color Projector Visible Light Communication Follow us on: (read more)
Browse Lasers Datasheets for World Star Tech -
. Electronics designers specify it for applications including networking, communications, sound and studio systems, laboratory instrumentation and industrial control. Each aluminum enclosure features an anodised 19” front panel with modern ergonomic handles for easy removal from the rack (read more)
Browse Rack Enclosures Datasheets for METCASE -
METCASE has launched a new version of its COMBIMET 19” rack cases. It has a wraparound top that offers superior aesthetics and easier access to components. COMBIMET is METCASE’s bestselling 19” aluminum enclosure. Applications include networking, communications (read more)
Browse Rack Enclosures Datasheets for METCASE -
signature red housing, the VRX is engineered to provide dependable point-level detection for powders and bulk solids—even under the most demanding industrial conditions. A highly visible, on-board status indicator light changes from green to red when the probe changes from an (read more)
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Conduct Research Top
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IR Remote Control Transmitter
. The infrared spectrum provides less ambient noise than other spectrums of light, like visible PHILIPS RC5 PROTOCOL light, and this makes infrared ideal for inexpensive reliable communication. The RC5 protocol is a common IR transmission proto- To create an IR control link, one needs a transmitter
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System analysis and simulation of airborne scannerless 3D imaging lidar
For the high performance PIN photodiode used for visible light communication .
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Full-duplex relay VLC in LED lighting linear system topology
Visible light communications with LEDs and photodiodes has been considered in [1], [2], [4] in indoor applications.
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Pulse shaping in unipolar OFDM-based modulation schemes
The physical properties of light emitting diodes (LEDs) and photodiodes (PDs) characterise a visible light communication (VLC) system as an intensity modulation/direct detection (IM/DD) system.
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Novel Unipolar Orthogonal Frequency Division Multiplexing (U-OFDM) for Optical Wireless
The physical properties of LEDs and Photodiodes (PDs) characterize a Visible Light Communication (VLC) system as an Intensity Modulation/Direct Detection (IM/DD) system.
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System-Level Design Methodologies for Telecommunication
” The term “VLC” first appeared in 2003, when a small group of people at Keio University in Japan (Nakagawa Laboratory) started to experiment with LEDs and photodiodes in order to achieve communication via visible light .
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Occupancy distribution estimation for smart light delivery with perturbation-modulated light sensing
However, we do emphasize that ultrafast LEDs and photodiodes have been used for visible light communication [38-41], and these LEDs and photodiodes can also be used for occupancy sensing.
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SVD-VLC: A novel capacity maximizing VLC MIMO system architecture under illumination constraints
Abstract—Multiple-input multiple-output (MIMO) systems using multiple light emitting diode (LED) sources and photo- diode (PD) detectors are attractive for visible light communication (VLC) as they offer a capacity gain proportional to the number of parallel single-input single-output (SISO …
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Advances in visible light communication technologies
Typical transmitters used for visible light communication are visible light LEDs and receivers are photodiodes and image sensors.
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Visible light communication using sustainable LED lights
Typical transmitters used for visible light communication are visible light LEDs and receivers are photodiodes and image sensors.
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Technological Innovation for Collective Awareness Systems
Amorphous Silicon pin structures, well studied during the 90’s as solar cells devices for terrestrial photovoltaic applications and low power electronic systems [2], are getting a renewed interest as photodiodes devices working in the visible light range for communication applications [3].