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Supplier: Hamamatsu Photonics
Description: High-speed response (100 MHz) The S5971 is a high-speed Si PIN photodiode designed for visible to near infrared light detection. This photodiode provides wideband characteristics at a low bias, making them suitable for optical communications and other high-speed
- Active Area Diameter or Length: 1.2 mm
- Active Area Height: 1.2 mm
- Dark Current: 1 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics
Description: High-speed response (500 MHz) The S5972 is a high-speed Si PIN photodiode designed for visible to near infrared light detection. This photodiode provides wideband characteristics at a low bias, making them suitable for optical communications and other high-speed
- Active Area Diameter or Length: 0.8000 mm
- Active Area Height: 0.8000 mm
- Dark Current: 0.5000 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics
Description: High-speed response (1 GHz) The S5973 is a high-speed Si PIN photodiode designed for visible to near infrared light detection. This photodiode provides wideband characteristics at a low bias, making them suitable for optical communications and other high-speed
- Active Area Diameter or Length: 0.4000 mm
- Active Area Height: 0.4000 mm
- Dark Current: 0.1000 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics
Description: Photodiode with mini-lens, high-speed response (1 GHz) The S5973-01 is a high-speed Si PIN photodiode designed for visible to near infrared light detection. The mini-lens type photodiode can be efficiently coupled to an optical fiber. This photodiode
- Active Area Diameter or Length: 0.4000 mm
- Active Area Height: 0.4000 mm
- Dark Current: 0.1000 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: ideal for very accurate nulling or centering applications. Position information can be obtained when the light spot diameter is larger than the spacing between the cells. Spectral response range is from 350 - 100 nm. Notch or bandpass filters can be added to achieve specific spectral
- Active Area Diameter or Length: 1.3 mm
- Active Area Height: 2.5 mm
- Dark Current: 0.1500 nA
- Operating Temperature: -40 to 100 C
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Supplier: OSI Optoelectronics
Description: FCI-H125G-10 A low noise, high bandwidth photodetector plus transimpedance amplifier designed for short wavelength (850nm) high speed fiber optic data communications. The hybrid incorporates a 250µm diameter large sensing area, high sensitivity silicon photodetector. It also includes a high
- Active Area Diameter or Length: 0.2500 mm
- Operating Temperature: -40 to 75 C
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
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Supplier: Marktech Optoelectronics
Description: the visible spectrum (150 nm - 550 nm) Optimized for UV range. Standard photovoltaic silicon photodiodes: Have a spectral sensitivity in the 400nm to 1100nm range for applications such as Spectroscopy Equipment and sensing requiring broadband sensitivity with enhancements in the blue
- Active Area Diameter or Length: 0.1000 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Package / Mounting: Other
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Supplier: RS Components, Ltd.
Description: The S5971, S5972 and S5973 series or Si PIN photodiodes from Hamamatsu are for applications such as optical fibre communication and high speed photometry. These photodiodes are designed to detect visible to near IR (infrared) light, providing wideband detection
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
- Spectral Response: Visible, IR
- Spectral Response Range: 320 to 1000 nm
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Supplier: RS Components, Ltd.
Description: The S5971, S5972 and S5973 series or Si PIN photodiodes from Hamamatsu are for applications such as optical fibre communication and high speed photometry. These photodiodes are designed to detect visible to near IR (infrared) light, providing wideband detection
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
- Spectral Response: Visible, IR
- Spectral Response Range: 320 to 1000 nm
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Supplier: RS Components, Ltd.
Description: The S5971, S5972 and S5973 series or Si PIN photodiodes from Hamamatsu are for applications such as optical fibre communication and high speed photometry. These photodiodes are designed to detect visible to near IR (infrared) light, providing wideband detection
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
- Spectral Response: Visible, IR
- Spectral Response Range: 320 to 1060 nm
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Supplier: RS Components, Ltd.
Description: The Photoconductive series, from OSI Optoelectronics, are planar diffused silicon photodiodes designed for high speed and high sensitivity applications.Their spectral range (350-1100nm) makes the Photoconductive series suitable for visible and near IR applications. These general
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
- Spectral Response: Visible, IR
- Spectral Response Range: 350 to 1100 nm
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Supplier: Marktech Optoelectronics
Description: well suited for visible and near IR applications requiring high speed and high sensitivity as well as low noise such as optical switches and optical communications. Marktech silicon detectors can be obtained with integrated filters for reduced visible light interference
- Active Area Diameter or Length: 10 mm
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
- Spectral Response: Visible
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Supplier: Marktech Optoelectronics
Description: well suited for visible and near IR applications requiring high speed and high sensitivity as well as low noise such as optical switches and optical communications. Marktech silicon detectors can be obtained with integrated filters for reduced visible light interference
- Active Area Diameter or Length: 1.21 mm
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
- Spectral Response: Visible
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Supplier: Electro Optical Components, Inc.
Description: Quadrant photodiodes are used for a variety of alignment applications including laser beams and position sensing. They are available in 2.5, 5.0 and 7.9 mm diameter active areas. Quadrant Photodetector Features Si-PIN photodiode Spectral range 400 – 1100
- Active Area Diameter or Length: 2.5 to 7.9 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
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Supplier: Electro Optical Components, Inc.
Description: EOC offers a variety of silicon photodiode options from IFW Optronics: Silicon Photodiodes with an Integrated Low Noise JFET Amplifier Quadrant Photodiodes
- Active Area Diameter or Length: 2.5 to 7.9 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now
- Active Area Diameter or Length: 8.25 mm
- Operating Temperature: -25 to 100 C
- Photodiode Package / Mounting: Leaded
- Spectral Response: Visible, IR
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Supplier: PREMA Semiconductor GmbH
Description: Two differential pairs of photodiodes with amplifiers The optical sensor IC PR5401 consists of two pairs of photodiodes placed in opposite quadrants with differential amplifiers. If illuminated uniformly, the output is Vcc/2, but depends on the balance of illumination on each pair.
- Array: Yes
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: PN Photodiode
- Photodiode Material: Silicon
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Supplier: First Sensor AG
Description: Due to their high gain and speed, these APDs are suitable for many industrial applications such as distance measurement, laser scanning and optical communication. Special features Maximum sensitivity at 800 nm Optimized for high speeds Low temperature coefficient Fast rise time Potentially
- Active Area Diameter or Length: 0.2300 mm
- Dark Current: 0.2000 to 0.5000 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
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Supplier: Ophir-Spiricon Inc.
Description: Automatic dynamic cancellation of up to 98% of background light
- Active Area Diameter or Length: 10 mm
- Active Area Height: 10 mm
- Rise Time: 2.00E8 ns
- Spectral Response: UV, Visible, IR
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Supplier: Micropac Industries, Inc.
Description: The 61055 is an N-P-N Planar Silicon Transistor in a package designed to be mounted in a double-clad printed circuit board. It is available in a range of sensitivities and is lensed for minimum response to stray light. High sensitivity, low dark current leakage, and low saturation voltage
- Dark Current: 25 nA
- Operating Temperature: -55 to 125 C
- PN, PIN, or Avalanche: PN Photodiode, PIN Photodiode
- PSD: Yes
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Supplier: Photonique SA
Description: UV & blue light solidstate photon detector/counter; 2mm sensor pitch
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Array: Yes
- Dark Current: 10000 nA
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Supplier: DigiKey
Description: CdS Cells 550nm 10 ~ 20kOhms @ 21 lux
- Operating Temperature: -60 to 75 C
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
- Spectral Response: Visible
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Supplier: Universal Semiconductor, Inc.
Description: Linear type, diffused junction technology
- Active Area Diameter or Length: 30 mm
- Active Area Height: 4 mm
- Dark Current: 3000 nA
- Noise Equivalent Power (NEP): 3.75 W/Hz½
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Supplier: OSRAM Opto Semiconductors
Description: Ambient light sensor with perfect V-lambda characteristic in Metal Can
- Active Area Diameter or Length: Over 2.73 mm
- Active Area Height: Over 2.73 mm
- Photodiode Package / Mounting: Leaded
- Spectral Response: Visible
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Featured Products Top
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Hamamatsu Photonics is pleased to introduce the G15978-0020P, an exciting new InGaAs photodiode that redefines the possibilities in compact sensor technology. Designed specifically for researchers, engineers, and industrial applications, this new photodiode is ideally suited for accurate (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics -
built-in monitor photodiode for power control and feedback applications. Features Visible red output: 675 nm (typ.) High optical output power: 210 m (read more)
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Hamamatsu Photonics is pleased to introduce the G15978-0020P, an exciting new InGaAs Avalanche Photodiode that redefines the possibilities in compact sensor technology. Designed specifically for researchers, engineers, and industrial applications, this new photodiode is ideally suited for (read more)
Browse Avalanche Diodes Datasheets for Hamamatsu Photonics -
Whether you work with optical communication systems or sensors, you need reliable devices to convert and amplify signals. That's where a transimpedance amplifier comes in! It's a current-to-voltage converter and helps with signal (read more)
Browse Amplifier and Comparator Chips Datasheets for ODG (Origin Data Global) -
devices as well as high-speed optical communications. Photodiodes have wide, transparent junctions as they operate in reversed bias where minimal amounts of current flow. They are used to detect light and are found in solar cells, photometry, and in optical communications or to generate electricity (read more)
Browse Diodes Datasheets for ASAP Semiconductor LLC -
) High refractive index, impervious to visible light Infrared PBS, thermal imaging systems (read more)
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High-Performance Tunable Filters for Precision Optical Control In fields like hyperspectral imaging, optical communications, and laser tuning, engineers face the challenge of achieving fast (read more)
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Particle counter Leveler Machine Vision LiDAR Biomedical equipment Color Projector Visible Light Communication Follow us on: (read more)
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METCASE has launched a new version of its COMBIMET 19” rack cases. It has a wraparound top that offers superior aesthetics and easier access to components. COMBIMET is METCASE’s bestselling 19” aluminum enclosure. Applications include networking, communications (read more)
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signature red housing, the VRX is engineered to provide dependable point-level detection for powders and bulk solids—even under the most demanding industrial conditions. A highly visible, on-board status indicator light changes from green to red when the probe changes from an (read more)
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Conduct Research Top
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IR Remote Control Transmitter
. The infrared spectrum provides less ambient noise than other spectrums of light, like visible PHILIPS RC5 PROTOCOL light, and this makes infrared ideal for inexpensive reliable communication. The RC5 protocol is a common IR transmission proto- To create an IR control link, one needs a transmitter
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System analysis and simulation of airborne scannerless 3D imaging lidar
For the high performance PIN photodiode used for visible light communication .
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Full-duplex relay VLC in LED lighting linear system topology
Visible light communications with LEDs and photodiodes has been considered in [1], [2], [4] in indoor applications.
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Pulse shaping in unipolar OFDM-based modulation schemes
The physical properties of light emitting diodes (LEDs) and photodiodes (PDs) characterise a visible light communication (VLC) system as an intensity modulation/direct detection (IM/DD) system.
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Novel Unipolar Orthogonal Frequency Division Multiplexing (U-OFDM) for Optical Wireless
The physical properties of LEDs and Photodiodes (PDs) characterize a Visible Light Communication (VLC) system as an Intensity Modulation/Direct Detection (IM/DD) system.
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System-Level Design Methodologies for Telecommunication
” The term “VLC” first appeared in 2003, when a small group of people at Keio University in Japan (Nakagawa Laboratory) started to experiment with LEDs and photodiodes in order to achieve communication via visible light .
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Occupancy distribution estimation for smart light delivery with perturbation-modulated light sensing
However, we do emphasize that ultrafast LEDs and photodiodes have been used for visible light communication [38-41], and these LEDs and photodiodes can also be used for occupancy sensing.
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SVD-VLC: A novel capacity maximizing VLC MIMO system architecture under illumination constraints
Abstract—Multiple-input multiple-output (MIMO) systems using multiple light emitting diode (LED) sources and photo- diode (PD) detectors are attractive for visible light communication (VLC) as they offer a capacity gain proportional to the number of parallel single-input single-output (SISO …
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Advances in visible light communication technologies
Typical transmitters used for visible light communication are visible light LEDs and receivers are photodiodes and image sensors.
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Visible light communication using sustainable LED lights
Typical transmitters used for visible light communication are visible light LEDs and receivers are photodiodes and image sensors.
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Technological Innovation for Collective Awareness Systems
Amorphous Silicon pin structures, well studied during the 90’s as solar cells devices for terrestrial photovoltaic applications and low power electronic systems [2], are getting a renewed interest as photodiodes devices working in the visible light range for communication applications [3].