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Supplier: PREMA Semiconductor GmbH
Description: Single Photodiode with identical Outer Dimensions PR5040 is a single silicon photodiode with rectangular shape having the same outer dimensions as the segmented types PR5001-PR5030. The photodiode has a low dark current combined with a high sensitivity. The dies are moulded into
- PN, PIN, or Avalanche: PN Photodiode
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Surface Mount Technology (SMT)
- Spectral Response: Visible, IR
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Supplier: Hamamatsu Photonics
Description: High-speed response (100 MHz) The S5971 is a high-speed Si PIN photodiode designed for visible to near infrared light detection. This photodiode provides wideband characteristics at a low bias, making them suitable for optical communications and other high-speed
- Active Area Diameter or Length: 1.2 mm
- Active Area Height: 1.2 mm
- Dark Current: 1 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics
Description: High performance, high reliability Si PIN photodiode The S5821 is a high-speed Si PIN photodiode having high sensitivity over a wide spectral range from visible to near infrared light. The S5821 provides high performance and reliability at a low cost. Features -
- Active Area Diameter or Length: 1.2 mm
- Active Area Height: 1.2 mm
- Dark Current: 2 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics
Description: High-speed response (500 MHz) The S5972 is a high-speed Si PIN photodiode designed for visible to near infrared light detection. This photodiode provides wideband characteristics at a low bias, making them suitable for optical communications and other high-speed
- Active Area Diameter or Length: 0.8000 mm
- Active Area Height: 0.8000 mm
- Dark Current: 0.5000 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics
Description: High-speed response (1 GHz) The S5973 is a high-speed Si PIN photodiode designed for visible to near infrared light detection. This photodiode provides wideband characteristics at a low bias, making them suitable for optical communications and other high-speed photometry.
- Active Area Diameter or Length: 0.4000 mm
- Active Area Height: 0.4000 mm
- Dark Current: 0.1000 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: PREMA Semiconductor GmbH
Description: Two differential pairs of photodiodes with amplifiers The optical sensor IC PR5401 consists of two pairs of photodiodes placed in opposite quadrants with differential amplifiers. If illuminated uniformly, the output is Vcc/2, but depends on the balance of illumination on each pair.
- Array: Yes
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: PN Photodiode
- Photodiode Material: Silicon
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Supplier: PREMA Semiconductor GmbH
Description: Two Triangular shaped Silicon Junctions PR5030 is a dual silicon photodiode with two separate cathodes and one common anode. Each photodiode has a triangular shape to form an interface along the diagonal of the die. Therefore, the two segments allow to resolve a position of a slit or
- Dark Current: 0.0440 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: PN Photodiode
- Photodiode Material: Silicon
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Supplier: Ophir-Spiricon Inc.
Description: Automatic dynamic cancellation of up to 98% of background light
- Active Area Diameter or Length: 2.4 mm
- Active Area Height: 2.8 mm
- Rise Time: 2.00E8 ns
- Spectral Response: Visible
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Supplier: PREMA Semiconductor GmbH
Description: 3 compact Silicon Junctions on a single Die PR5020 and PR50221 are triple silicon photodiodes with three separate cathodes and one common anode. Therefore, the three segments allow to resolve two transitions. With a wider and thinner photodiode in the center of the die, the PR5020 and
- Dark Current: 0.0520 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: PN Photodiode
- Photodiode Material: Silicon
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Supplier: OSI Optoelectronics
Description: The dual LED series consists of a 660nm (red) LED and a companion IR LED such as 880 / 895, 905, or 940nm. They are widely used for ratio metric measurements such as medical analytical and monitoring devices. They can also be used in applications requiring a low cost Bi-Wavelength light
- Active Area Diameter or Length: 2.31 mm
- Active Area Height: 2.31 mm
- Dark Current: 5 nA
- Operating Temperature: -25 to 85 C
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Supplier: OSI Optoelectronics
Description: The dual LED series consists of a 660nm (red) LED and a companion IR LED such as 880 / 895, 905, or 940nm. They are widely used for ratio metric measurements such as medical analytical and monitoring devices. They can also be used in applications requiring a low cost Bi-Wavelength light
- Active Area Diameter or Length: 1.02 mm
- Dark Current: 2 nA
- Operating Temperature: -25 to 85 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: QD7-0-SD or QD50-0-SD are quadrant photodiode arrays with associated circuitry to provide two difference signals and a sum signal. The two difference signals are voltage analogs of the relative intensity difference of the light sensed by opposing pairs of the photodiode quadrant
- Active Area Diameter or Length: 8 mm
- Dark Current: 15 nA
- Operating Temperature: -40 to 100 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral response ranges from 350 to 1100 nm, making the regular photovoltaic
- Active Area Diameter or Length: 10 mm
- Active Area Height: 20 mm
- Noise Equivalent Power (NEP): 2.90E-13 W/Hz½
- Operating Temperature: -10 to 60 C
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Supplier: OSRAM Opto Semiconductors
Description: Ambient light sensor with perfect V-lambda characteristic in Metal Can
- Active Area Diameter or Length: Over 2.73 mm
- Active Area Height: Over 2.73 mm
- Photodiode Package / Mounting: Leaded
- Spectral Response: Visible
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Supplier: Micropac Industries, Inc.
Description: The 61063 is a Silicon Photodiode in a package designed to be mounted in a double-clad printed circuit board. It is lensed for minimum response to stray light. Fast operating speed makes this device the best option in applications where speed considerations predominate. Available
- Dark Current: 50 nA
- Operating Temperature: -55 to 125 C
- PN, PIN, or Avalanche: PN Photodiode, PIN Photodiode
- PSD: Yes
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Supplier: Photonique SA
Description: Visible light solidstate photon detector/counter for matrix assemblies
- Active Area Diameter or Length: 2.1 mm
- Active Area Height: 2.1 mm
- Dark Current: 15000 nA
- Operating Temperature: -40 to 40 C
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Supplier: Photonique SA
Description: Visible light solidstate photon detector/counter for array assemblies
- Active Area Diameter or Length: 2.1 mm
- Active Area Height: 2.1 mm
- Dark Current: 15000 nA
- Operating Temperature: -40 to 40 C
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Supplier: Photonique SA
Description: Visible light solidstate photon detector/counter for matrix assemblies
- Active Area Diameter or Length: 3 mm
- Active Area Height: 3 mm
- Dark Current: 75000 nA
- Operating Temperature: -40 to 40 C
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Supplier: Photonique SA
Description: Visible light solidstate photon detector/counter; 2mm sensor pitch
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Array: Yes
- Dark Current: 10000 nA
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Supplier: Micropac Industries, Inc.
Description: The 61056 is an N-P-N Planar Silicon Photodarlington Transistor in a package designed to be mounted in a double-clad printed circuit board and used in low light level applications. It is available in a range of sensitivities and is lensed for minimum response to stray light. High
- Dark Current: 250 nA
- Operating Temperature: -55 to 125 C
- PN, PIN, or Avalanche: PN Photodiode, PIN Photodiode
- PSD: Yes
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Supplier: Micropac Industries, Inc.
Description: The 61055 is an N-P-N Planar Silicon Transistor in a package designed to be mounted in a double-clad printed circuit board. It is available in a range of sensitivities and is lensed for minimum response to stray light. High sensitivity, low dark current leakage, and low saturation voltage
- Dark Current: 25 nA
- Operating Temperature: -55 to 125 C
- PN, PIN, or Avalanche: PN Photodiode, PIN Photodiode
- PSD: Yes
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Supplier: Micropac Industries, Inc.
Description: The 61010 is an N-P-N Planar Silicon Photodarlington Transistor in a small outline package designed to be housing mounted. Its large effective aperture and narrow angular response make this a highly sensitive device with minimum response to off-axis or stray light. This sensor is also
- Dark Current: 250 nA
- Operating Temperature: -55 to 125 C
- PN, PIN, or Avalanche: PN Photodiode, PIN Photodiode
- PSD: Yes
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Supplier: Marktech Optoelectronics
Description: the visible spectrum (150 nm - 550 nm) Optimized for UV range. Standard photovoltaic silicon photodiodes: Have a spectral sensitivity in the 400nm to 1100nm range for applications such as Spectroscopy Equipment and sensing requiring broadband sensitivity with enhancements in the blue
- Active Area Diameter or Length: 0.1000 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Package / Mounting: Other
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Supplier: RS Components, Ltd.
Description: The SFH 2270R, from OSRAM Opto Semiconductor, is a high precision ambient light photodiode. It comes in OSRAMs TOPLED® package which is black in colour and surface mounted (SMD). It is designed for ambient light sensor applications. Spectrums Detected = Visible
- Photodiode Package / Mounting: Other
- Spectral Response: Visible
- Spectral Response Range: 480 to 650 nm
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Supplier: ams
Description: The TSL2569 is a low-voltage, light-to-digital converter that transforms light intensity to a digital signal output capable of a direct I2C interface. Each device combines one broadband photodiode (visible plus infrared) and one infrared-responding photodiode on a
- Input (Supply) Voltage: 2.7 to 3.6 volts
- Operating Temperature: -40 to 85 C
- Sensor Type: Light Sensor
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Supplier: ams
Description: The TCS3200 programmable color light-to-frequency converter combines configurable silicon photodiodes and a current-to-frequency converter on a single monolithic CMOS integrated circuit. The output is a square wave (50% duty cycle) with frequency directly proportional to light
- Color Types Detected: RGB (Visible)
- Operating Temperature: -40 to 158 F
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Supplier: Broadcom Inc.
Description: APDS-9930 is a digital I2C compatible interface ambient light sensor (ALS) and proximity sensor with IR LED in a single 8-pin package. The ambient light sensor utilizes dual photodiodes to approximate the human eye response with a low lux performance at 0.01 lux. This high
- Beam: Visible, Infrared
- Body: Rectangular
- Interface: Serial
- Operating Distance: 3.94 inch
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Supplier: ams
Description: The TSL2561 is a light-to-digital converter that transforms light intensity to a digital signal output capable of an I2C interface. Each device combines one broadband photodiode (visible plus infrared) and one infrared-responding photodiode on a single CMOS
- Input (Supply) Voltage: 2.7 to 3.6 volts
- Operating Temperature: -40 to 85 C
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Supplier: ASTM International
Description: conventional optical designs, where the sample is irradiated by monochromatic light, and ‘reverse’ optic designs coupled to photodiode arrays, where the light is separated by a polychromator after passing through the sample. For spectrophotometers that utilize servo-operated
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Supplier: Broadcom Inc.
Description: The APDS-9301 is Light-to-Digital Ambient Light Photo Sensor that converts light intensity to digital signal output capable of direct I2C interface. Each device consists of one broadband photodiode (visible plus infrared) and one infrared photodiode. Two
- Effective Area Diameter or Length: 2.2 mm
- Effective Area Width: 2.6 mm
- Output Type: Voltage Output, Current Output
- Supply Voltage: 3.8 volts
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Supplier: Renesas Electronics Corporation
Description: , rejecting UV light and IR light. The output voltage is proportional to the visible light intensity from 0.5 lux up to 10,000 lux. However, the input luminance range can go up to 30,000 lux with some compromise in linearity. A dark current compensation circuit aids the
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Supplier: Broadcom Inc.
Description: factory-trimmed and calibrated to 100mm proximity detection distance without requiring customer calibrations. Gesture detection utilizes four directional photodiodes, integrated with visible blocking filter, to accurately sense simple UP-DOWN-RIGHT-LEFT gestures or more complex
- Body: Rectangular
- Interface: Serial
- Operating Distance: 3.94 inch
- Operating Temperature: -40 to 185 F
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Supplier: ProductionLine Testers, Inc.
Description: these types of devices at the fastest possible production throughput. Features • External Optics Module with visible light LED's for up to 1000Lux at 10cm • Optics also has Infrared LED and Photodiode with amplifier for PX sensing • Sync circuit
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Supplier: RS Components, Ltd.
Description: The NaPiCa series of through-hole visible light sensors, detect light which then converts into an electrical current. The sensors are made up of a photodiode and a built-in amplifier and are particularly suited for brightness detection applications. Photocurrent
- Sensor Type: Light Sensor
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Supplier: Waters Corporation
Description: -up companies. Features: A completely flexible system that is customizable for any laboratory with quality HPLC components options: binary or isocratic pump, automated or manual injector, UV/Vis, refractive index, multi-? fluorescence, evaporative light scattering, or photodiode array
- Analysis Method: Analytical Analysis
- Computer Interface: Yes
- Detection Method: Ultraviolet / Visible Light Detector, Refractive Index Detector, Fluorescence Detector, Light Scattering Detector
- Instrument Type: Fixtured or Permanent
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Introducing Hamamatsu Photonics' new Si APD S17353 Series sensors, engineered for exceptional sensitivity and minimal noise across a wide wavelength range of up to 800 nm. These advanced sensors are specifically designed for low-light measurement applications, making them ideal for use (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics -
Hamamatsu Photonics announces the new S16495 silicon photodiode, explicitly engineered for high-sensitivity detection at 310 nm. This latest addition to our extensive line of photonic (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics -
Hamamatsu Photonics is pleased to introduce the G15978-0020P, an exciting new InGaAs photodiode that redefines the possibilities in compact sensor technology. Designed specifically for researchers, engineers, and industrial applications, this new photodiode is ideally suited for accurate (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics -
Current for Improved Performance A key feature of this photodiode series is its low dark current, comparable to conventional metal package products. This characteristic enables the new NIR sensors to perform reliably, even in low-light environments (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics -
built-in monitor photodiode for power control and feedback applications. Features Visible red output: 675 nm (typ.) High optical output power: 210 m (read more)
Browse Diode Lasers Datasheets for World Star Tech
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Silicon Photodiodes Physics and Technology (.pdf)
Silicon photodiodes are semiconductor devices used for the detection of light in ultra-violet, visible and infrared spectral regions. Because of their small size, low noise, high speed and good spectral response, silicon photodiodes are being used for both civilian and defense regulated
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IR Remote Control Transmitter
AN1064 IR Remote Control Transmitter receiver. The IR light then travels through the air and is Author: Tom Perme detected at the receiver by a photo-diode. The photo- John McFadden diode is often contained in a complete module which Microchip Technology Inc. demodulates the modulated signal
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Low Noise, IR‐Blind Organohalide Perovskite Photodiodes for Visible Light Detection and Imaging
Thus, an ideal substitute for silicon as the active junction in visible light photodiodes is yet to present itself.
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Handbook of Modern Sensors
A design of a UV detector is similar to that of a visible light photodiode , however, its window or lens shall be fabricated of a material that is not opaque for the UV photons.
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Indoor optical wireless communication by ultraviolet and visible light
In fact, not only the specific photodiode we used has a large bandwidth, but most of the commercial visible light photodiode detectors have a large bandwidth of ~100MHz.
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Phototoxicity in Human Retinal Pigment Epithelial Cells Promoted by Hypericin, a Component of St. John’s Wort
Cells were irradiated for 1, 3, 5, and 10 min at a fluence rate of 10.6–12 W m)2 , which was monitored with an YSI-Kettering radiometer (model 65A; YSI, Yellow Springs, OH), equipped with a visible light photodiode .
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Physics of gas breakdown for ion beam transport in gas
Diagnostics include carbon activation, K~ X-ray imaging of aluminum targets, a visible light photodiode , a framing camera, net current B-dot monitors, HeNe interferometry to measure electron density, and diode voltage and current monitors.
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Three-dimensional structures for micro-optical mechanical systems in standard CMOS
Researchers have already used CMOS to demonstrate visible light photodiodes with an external quantum efficiency of 50-80%, position sensitive devices, surface channel CCDs, LEDs emitting infrared or visible light and Active Pixel Sensors5 among other things.
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Application of layered synthetic microstructures to high-temperature plasma diagnostics
that visible light photodiodes coupled to NE1ll scin- .
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Sustainable energy-efficient wireless applications using light
A portable terminal will have a visible light photodiode and a near IR LED as well to enable full-duplex operation any- where within the room.
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Interferometric measurements on a triggered plasma opening switch source
comparison data from a visible light photodiode to verify the timing of the flashboard firing to the density rise.
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Experimental Study of a Compact Nanosecond Plasma Gun
The plasma gun temporal structure and plasma bullet velocity inferred from fast photodiode visible light measurements are proposed in the Photodiode Measure- ments Section.