Distributed Feedback Semiconductor Lasers

| Vertical and horizontal waveguide parameters | |||||
|---|---|---|---|---|---|
| Carrier recombination and IVBA parameters | |||||
| w eff, vert | = | 0.564 (0.548) [*] ?m | effective width (vertical) for optical mode | ||
| d qw | = | 0.05 ?m | total width of quantum wells | ||
| ? vert | = | 37.6 (40.4 ) [*] | full-width half-maximum, FWHM for emission from facet | ||
| w eff, hor | = | 1.519 (1.587) [*] ?m | effective width (horizontal) for optical mode | ||
| W | = | 2.0 ?m | ridge width | ||
| ? hor | = | 24.8 | FWHM for emission from facet | ||
| ? MOW | = | 0.085 (0.088) [*] | overall confinement factor | ||
| A | = | 1.519x0.564=0.857 (0.869) [*] ?m 2 effective optical area | |||
| ? | = | 2 ? (37.6 /180)x(24.8 /180)=0.181 (0.191) [*] emission solid angle (steradians) | |||
| Gain, loss and linewidth parameters | |||||
| d g/d N | = | 3.0x10 16cm 2 | differential field-gain | ||
| N tr | = | 1.5x 10 18cm 3 | transparency density | ||
| ? H | = | 3.0 | linewidth-enhancement factor | ||
| ? | = | 1.0x10 17cm 3 | nonlinear-gain parameter | ||
| a wg | = | 30 cm 1 | waveguide power loss | ||
| A | = | 0 | linear recombination (also written as 1 / ? r) | ||
| B | = | 1x10 10cm 3/s | 'bimolecular' recombination assumed radiative | ||
| C | = | 1.3x10 28cm 6/s | assumed nonradiative (Auger recombination) | ||
| b | = | 2.0x10 17cm 2 | IVBA coefficient | ||
| Effective refractive indices | |||||
| n eff | = | 3.28 | giving phase velocity v p=c/n eff | ||
| n eff g | = | 3.70 | giving group velocity |