Nanoscale Transistors: Device Physics, Modeling and Simulation

Chapter 1: Basic Concepts

1.1 Introduction

This chapter is a review of (or introduction to) some key concepts that will be needed as we examine nanotransistors. For the most part, concepts will be stated, not derived. A thorough introduction to these concepts can be found in Datta [1.1]. We also assume that the reader is acquainted with the basics of semiconductor physics (as discussed, for example, in [1.2]). For the quantum mechanical underpinning, see Datta [1.3] and for a more extensive discussion of semiclassical transport theory, see Lundstrom [1.4].

1.2 Distribution Functions

In equilibrium, the probability that a state at energy, E, is occupied is given by the Fermi function as

(1.1)

where the subscript, 0, reminds us that the Fermi function is defined in equilibrium, and T L is the lattice temperature. When states in the conduction band are located well above the Fermi level, the semiconductor is nondegenerate and eqn. (1.1) can be approximated as

(1.2)

By writing the energy as the sum of potential and kinetic energies,

(1.3)

where E C is the bottom of the conduction band, eqn. (1.2) can be written as

(1.4)

where C is a constant. Equation (1.4) states that in a nondegenerate semiconductor, the carrier velocities are distributed in a Gaussian (or Maxwellian) distribution with the spread of the distribution related to the temperature of the carriers. Since ,we can also write

(1.5)

which shows that the carrier velocities are distributed symmetrically about the x-axis (or for that matter, the y- and...

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